AC AC 27 1 SweepVar freq -1 Name of variable or parameter to be swept 2 UseSweepPlan '' -1 Flag to indicate use of SweepPlan 3 SweepPlan '' -1 SweepPlan instance path name for sweep values 4 Start 1.0GHz 0 Start frequency 5 Stop 10.0GHz 0 Stop frequency 6 Step 1.0GHz 0 Step frequency 7 Center '' 0 Center frequency 8 Span '' 0 Span 9 Lin '' -1 Linear sweep 10 Dec '' -1 Number of points per decade 11 Log '' -1 Log sweep 12 Reverse '' -1 Reverse sweep 13 Pt '' 0 Frequency value if its not being swept 14 Sort 'LINEAR START STEP' -1 Sort frequencies 15 CalcNoise '' -1 Calculate noise parameters 16 NoiseNode '' -1 Nodename to compute noise voltage (repeatable) 17 SortNoise NoiseSortOff -1 Sort Noise Contribution by: Value/1, Name/2 (default: 0/NoOutput) 18 IncludePortNoise no -1 Use finite differences for sensitivities 19 NoiseThresh 0 -1 Noise Contribution Threshold 20 BandwidthForNoise 1Hz 0 Bandwidth for noise analysis 21 FreqConversion No -1 Enable AC frequency conversion 22 UseFiniteDiff no -1 Use finite differences for sensitivities 23 NestLevel 2 -1 Levels of subcircuits to output 24 StatusLevel 2 -1 Degree of annotation 25 OutputBudgetIV no -1 Output top-level pin currents and voltages 26 Freq '' 0 Frequency when not swept 27 Other '' -1 Output string to netlist END_ELEMENT AIRIND1 AIRIND1 6 1 N 10.0 -1 Number of turns 2 D 210.0mils 5 Diameter of form 3 L 400.0mils 5 Length of form 4 WD 32.0mils 5 Wire diameter 5 Rho 1.0 -1 Metal Resistivity (Relative to copper) 6 Temp '' 12 Physical temperature END_ELEMENT AIRIND2 AIRIND2 6 1 N 10.0 -1 Number of turns 2 D 210.0mils 5 Diameter of form 3 L 400.0mils 5 Length of form 4 AWG 20 -1 Wire gauge 5 Rho 1.0 -1 Metal Resistivity (Relative to copper) 6 Temp '' 12 Physical temperature END_ELEMENT AM_DemodTuned AM_DemodTuned 2 1 Fnom 1GHz 0 Nominal Input Frequency 2 Rout 50ohm 1 Output Resistance END_ELEMENT AM_ModTuned AM_ModTuned 3 1 ModIndex 1.0 -1 Modulation Index 2 Fnom 1GHz 0 Nominal Input Frequency 3 Rout 50ohm 1 Output Resistance END_ELEMENT Advanced_Curtice2_Model Advanced_Curtice2_Model 59 1 NFET y_n1 -1 Model Type - YES or NO 2 PFET y_n0 -1 Model Type - YES or NO 3 Idsmod 1 -1 1=CQ 2=CC 3=Statz 4=Materka 5=Tajima 6=symbolic 7=TOM 8=Modified Materka 4 Vto '' 9 Threshold voltage, V 5 Beta '' -1 Transconductance parameter, A/V^2 6 Lambda '' -1 Channel length modulation parameter, 1/V 7 Alpha '' -1 Hyperbolic tangent function parameter, 1/V 8 Tau '' 6 Transit time under gate, S 9 Taumdl y_n0 -1 Use 2nd order Bessel polynomial to model tau effect in transient 10 Tnom '' 12 Nominal ambient temperature, Celsius 11 Idstc '' -1 Ids temperature coefficient 12 Ucrit '' -1 Parameter for critical field for mobility degradation 13 Vgexp '' -1 Exponential parameter 14 Gamds '' -1 describes effective pinch-off combined with Vds 15 Vtotc '' -1 VTO Temperature Coefficient, V/Degree C 16 Betatce '' -1 BETA Exponential Temperature Coefficient, %/Degree C 17 Rgs '' 1 G-S resistance, Ohm 18 Rf '' 1 G-S effective forward-bias resistance (0. means infinity), Ohm 19 Gscap '' -1 0=none 1=linear 2=junction 3=Statz Charge 5=Statz Cap 20 Cgs '' 4 Zero-bias G-S junction cap., F 21 Cgd '' 4 Zero-bias G-D junction cap., F 22 Gdcap '' -1 0=none 1=linear 2=junction 3=Statz Charge 5=Statz Cap 23 Fc '' -1 Coefficient for forward-bias depletion cap. 24 Rgd '' 1 Gate Drain resistance, Ohm 25 Rd '' 1 Drain ohmic resistance, Ohm 26 Rg '' 1 Gate resistance, Ohm 27 Rs '' 1 Source ohmic resistance, Ohm 28 Ld '' 3 Drain inductance, H 29 Lg '' 3 Gate inductance, H 30 Ls '' 3 Source inductance, H 31 Cds '' 4 Drain-source cap., F 32 Rc '' 1 Used with CRF to model freq. dependent output conductance (0. means infinity), Ohm 33 Crf '' 4 Used with RC to model freq. dependent output conductance, F 34 Gsfwd '' -1 0=none 1=linear 2=diode 35 Gsrev '' -1 0=none 1=linear 2=diode 36 Gdfwd '' -1 0=none 1=linear 2=diode 37 Gdrev '' -1 0=none 1=linear 2=diode 38 R1 '' 1 Approximate breakdown resistance (0. Means Infinity), Ohm 39 R2 '' 1 Resistance relating breakdown voltage to channel, Ohm 40 Vbi '' 9 Built-in gate potential, V 41 Vbr '' 9 Gate junction reverse bias breakdown voltage (0. Means Infinity), V 42 Vjr '' 9 Breakdown junction potential, V 43 Is '' 10 Gate junction saturation current, A 44 Ir '' 10 Gate rev saturation current, A 45 Imax '' 10 Explosion current, A 46 Xti '' -1 Saturation Current Temperature Exponent 47 Eg '' -1 Energy Gap for Temperature Effect on IS 48 N '' -1 Gate junction emission coefficient 49 Fnc '' 0 Flicker noise corner frequency 50 R '' -1 Gate noise coefficient 51 P '' -1 Drain noise coefficient 52 C '' -1 Gate-drain noise correlation coefficient. 53 Taumdl y_n0 -1 Use 2nd order Bessel polynomial to model tau effect in transient 54 wVgfwd '' 9 Gate junction forward bias (warning), V 55 wBvgs '' 9 Gate-source reverse breakdown voltage (warning), V 56 wBvgd '' 9 Gate-drain reverse breakdown voltage (warning), V 57 wBvds '' 9 Drain-source breakdown voltage (warning), V 58 wIdsmax '' 10 Maximum drain-source current (warning), A 59 wPmax '' 8 Maximum power dissipation (warning), W END_ELEMENT Amplifier Amplifier 22 1 S21 dbpolar(0,0) -1 Forward Transmission Coefficient, use x+j*y, polar(x,y), dbpolar(x,y) for complex value 2 S11 polar(0,0) -1 Forward Reflection Coefficient, use x+j*y, polar(x,y), dbpolar(x,y), VSWRpolar(x,y) for complex value 3 S22 0+j*0 -1 Reverse Reflection Coefficient, use x+j*y, polar(x,y), dbpolar(x,y), VSWRpolar(x,y) for complex value 4 S12 0. -1 Reverse Transmission Coefficient, use x+j*y, polar(x,y), dbpolar(x,y) for complex value 5 NF '' 13 Noise Figure in dB 6 NFmin '' 13 Minimum Noise Figure at Sopt in dB 7 Sopt '' -1 Optimum Source Reflection for Minimum Noise Figure, use x+j*y, polar(x,y), dbpolar(x,y) for complex value 8 Rn '' 1 Equivalent Noise Resistance 9 Z1 '' 1 Reference Impedance for Port1 10 Z2 '' 1 Reference Impedance for Port2 11 GainCompType LIST -1 Gain Compression Type, parameters from following LIST or in FILE 12 GainCompFreq '' 0 Frequency at which Gain Compression is specified 13 ReferToInput OUTPUT -1 Power Levels refer to INPUT or OUTPUT 14 SOI '' -1 Second Order Intercept in dBm 15 TOI '' -1 Third Order Intercept in dBm 16 Psat '' -1 Power Saturation Point in dBm 17 GainCompSat '' 13 Gain Compression at PSat in dB 18 GainCompPower '' -1 Power Level in dBm at Gain Compression Specified by GainComp 19 GainComp 1.dB 13 Gain Compression in dB at GainCompPower 20 AM2PM '' -1 Amplitude Modulation to Phase Modulation in degrees/dB 21 PAM2PM '' -1 Power Level at AM2PM in dBm 22 GainCompFile '' -2 Filename for Gain Compression Data END_ELEMENT AmplifierP2D AmplifierP2D 1 1 P2DFile '' -2 Filename for P2D Data END_ELEMENT AmplifierS2D AmplifierS2D 4 1 S2DFile '' -2 Filename for S2D Data 2 GCFreq '' 0 Reference Frequency for Gain Compression 3 VarName '' -2 Variable That Parameterizes S2D Data 4 VarValue '' -1 Select S2D Data at VarName=VarValue END_ELEMENT AmplifierVC AmplifierVC 2 1 Gain (30-15*_v3) -2 Gain as a function of control voltage (_v3), in dB/V 2 Rout 50ohm 1 Output Resistance END_ELEMENT AntLoad AntLoad 3 1 AntType MONOPOLE -1 MONOPOLE or DIPOLE 2 Length 1m 5 Physical Antenna Length 3 RatioLR 10 -1 Length to Radius Ratio END_ELEMENT Attenuator Attenuator 4 1 Loss 0.dB 13 attenuation in dB 2 VSWR 1. -1 voltage standing wave ratio for both ports 3 Rref 50.ohm 1 reference resistance for both ports 4 Temp '' 12 temperature in degrees Celsius END_ELEMENT BALUN1 BALUN1 12 1 Z 50.0ohm 1 Characteristic impedance of transmission line 2 Len 12.0mils 5 Physical length of transmission line 3 K 2.0 -1 Effective dielectric constant 4 A 0.0 -1 Attenuation of transmission line, dB per unit length 5 F 1.0GHz 0 Frequency for scaling attenuation 6 N 5.0 -1 Number of turns 7 AL 960.0nH 3 Inductance index 8 TanD 0 -1 Dielectric loss tangent 9 Mur 1 -1 Relative permeability 10 TanM 0 -1 Permeability 11 Sigma 0 -1 Dielectric conductivity 12 Temp '' 12 Physical temperature END_ELEMENT BALUN2 BALUN2 12 1 Z 50.0ohm 1 Characteristic impedance of transmission line 2 Len 12.0mils 5 Physical length of transmission line 3 K 2.0 -1 Effective dielectric constant 4 A 0.0 -1 Attenuation of transmission line, dB per unit length 5 F 1.0GHz 0 Frequency for scaling attenuation 6 Mu 10.0 -1 Relative permeability of surrounding sleeve 7 L 20.0nH 3 Inductance (per unit length) of the line without the sleeve 8 TanD 0 -1 Dielectric loss tangent 9 Mur 1 -1 Relative permeability 10 TanM 0 -1 Permeability 11 Sigma 0 -1 Dielectric conductivity 12 Temp '' 12 Physical temperature END_ELEMENT BFINL BFINL 4 1 Subst FSub1 -1 Substrate instance name 2 D 20.0mils 5 Width of gap 3 L 1000.0mils 5 Length of finline 4 Temp '' 12 Physical temperature END_ELEMENT BFINLT BFINLT 3 1 Subst FSub1 -1 Substrate instance name 2 D 20.0mils 5 Width of gap 3 Temp '' 12 Physical temperature END_ELEMENT BIP BIP 10 1 A 0.99 -1 Magnitude of current gain ALPHA at DC 2 T 1.0nsec 6 Time delay associated with current gain 3 F 0.1GHz 0 -3dB frequency for current gain 4 Cc 10.0pF 4 Collector capacitance 5 Gc 1.0uS 2 Collector conductance 6 Rb 2.0ohm 1 Base resistance 7 Lb 1.0nH 3 Base inductance 8 Ce 10.0pF 4 Emitter capacitance 9 Re 2.0ohm 1 Emitter resistance 10 Le 1.0nH 3 Emitter inductance END_ELEMENT BIPB BIPB 11 1 B 20.0 -1 Magnitude of current gain BETA at DC 2 A 0.0deg 7 Phase offset of current gain 3 T 1.0nsec 6 Time delay associated with current gain 4 Cc 10.0pF 4 Collector capacitance 5 Gc 1.0uS 2 Collector conductance 6 Rb 2.0ohm 1 Base resistance 7 Lb 1.0nH 3 Base inductance 8 Ce 10.0pF 4 Emitter capacitance 9 Re 2.0ohm 1 Emitter resistance 10 Le 1.0nH 3 Emitter inductance 11 Rel 0.2ohm 1 Emitter lead resistance END_ELEMENT BJT4_NPN BJT4_NPN 5 1 Model BJTM1 -1 Model instance name 2 Area '' -1 Scaling Factor 3 Region '' -1 DC operating region, 0=off, 1=on, 2=rev, 3=sat 4 Temp '' 12 Device operating temperature 5 Mode simtype_nonlin -1 Simulation Mode for This Device END_ELEMENT BJT4_PNP BJT4_PNP 5 1 Model BJTM1 -1 Model instance name 2 Area '' -1 Scaling Factor 3 Region '' -1 DC operating region, 0=off, 1=on, 2=rev, 3=sat 4 Temp '' 12 Device operating temperature 5 Mode simtype_nonlin -1 Simulation Mode for This Device END_ELEMENT BJT_Model BJT_Model 61 1 NPN y_n1 -1 Model Type - YES or NO 2 PNP y_n0 -1 Model Type - YES or NO 3 Bf '' -1 Ideal Max. Forward Beta 4 Ikf '' 10 Corner for Forward Beta High Current Roll-off (0. Means Infinity), A 5 Ise '' 10 B-E Leakage Saturation Current, A 6 Ne '' -1 B-E Leakage Emission Coefficient 7 Vaf '' 9 Forward Early Voltage (0. Means Infinity), V 8 Nf '' -1 Forward Current Emission Coefficient 9 Tf '' 6 Ideal Forward Transit Time, S 10 Xtf '' -1 Coefficient of Bias Dependence for TF 11 Vtf '' 9 Voltage Dependence of TF on B-C Voltage (0. Means Infinity), V 12 Itf '' 10 Parameter for High Current Effect on TF, A 13 Ptf '' -1 Excess Phase at Freq. = 1/(TF*2PI) (Not Used), Degrees 14 Xtb '' -1 Temperature Exponent for Forward and Reverse Beta 15 Approxqb y_n1 -1 Use the approximation for Qb vs early voltage 16 Br '' -1 Ideal Max. Reverse Beta 17 Ikr '' 10 Corner for Reverse Beta High Current Roll-off (0. Means Infinity), A 18 Isc '' 10 B-C Leakage Saturation Current, A 19 Nc '' -1 B-C Leakage Emission Coefficient 20 Var '' 9 Reverse Early Voltage (0. Means Infinity), V 21 Nr '' -1 Reverse Current Emission Coefficient 22 Tr '' 6 Ideal Reverse Transit Time, S 23 Eg '' -1 Energy Gap for Temperature Effect on IS, eV 24 Is '' 10 Transport Saturation Current, A 25 Imax '' 10 Explosion current, A 26 Xti '' -1 Temperature Exponent for Saturation Current 27 Tnom '' 12 Nominal ambient temperature, Celsius 28 Nk '' -1 High-Current Roll-off Coefficient 29 Iss '' 10 Substrate P-N Saturation Current, A 30 Ns '' -1 Substrate P-N Emission Coefficient 31 Cjc '' 4 B-C Zero-bias Depletion Cap., F 32 Vjc '' 9 B-C Junction Built-in Potential, V 33 Mjc '' -1 B-C Junction Exponential Factor 34 Xcjc '' 4 Fraction of CJC That Goes to Internal Base Node 35 Fc '' -1 Forward-bias Depletion Cap. Coefficient 36 Cje '' 4 B-E Zero-bias Depletion Cap., F 37 Vje '' 9 B-E Junction Built-in Potential, V 38 Mje '' -1 B-E Junction Exponential Factor 39 Cjs '' 4 Zero-bias Collector Substrate (Ground) Cap., F 40 Vjs '' 9 Substrate Junction Built-in Potential, V 41 Mjs '' -1 Substrate Junction Exponential Factor 42 Rb '' 1 Zero-bias Base Resistance, Ohm 43 Irb '' 10 Current When Base Resistance Falls Halfway to Its Min. Value (0. Means Infinity), A 44 Rbm '' 1 Min. Base Resistance At High Currents (0. Means RB), Ohm 45 Re '' 1 Emitter Resistance, Ohm 46 Rc '' 1 Collector Resistance, Ohm 47 Kf '' -1 Flicker Noise Coefficient 48 Af '' -1 Flicker Noise Exponent 49 Kb '' -1 Burst Noise Coefficient 50 Ab '' -1 Burst Noise Exponent 51 Fb '' 0 Burst Noise Corner Frequency 52 Ffe '' -1 Flicker noise frequency exponent 53 wVsubfwd '' 9 Substrate Junction Forward Bias (warning), V 54 wBvsub '' 9 Substrate Junction Reverse Breakdown Voltage (warning), V 55 wBvbe '' 9 Base-Emitter Reverse Breakdown Voltage (warning), V 56 wBvbc '' 9 Base-Collector Reverse Breakdown Voltage (warning), V 57 wVbcfwd '' 9 Base-Collector Forward Bias (warning), V 58 wIbmax '' 10 Maximum Base Current (warning), A 59 wIcmax '' 10 Maximum Collector Current (warning), A 60 wPmax '' 8 Maximum Power Dissipation (warning), W 61 Lateral y_n0 -1 Lateral substrate geometry type END_ELEMENT BJTM1 BJTM1 1 1 Area '' -1 Scaling Factor END_ELEMENT BJT_NPN BJT_NPN 5 1 Model BJTM1 -1 Model instance name 2 Area '' -1 Scaling Factor 3 Region '' -1 DC operating region, 0=off, 1=on, 2=rev, 3=sat 4 Temp '' 12 Device operating temperature 5 Mode simtype_nonlin -1 Simulation Mode for This Device END_ELEMENT BJT_PNP BJT_PNP 5 1 Model BJTM1 -1 Model instance name 2 Area '' -1 Scaling Factor 3 Region '' -1 DC operating region, 0=off, 1=on, 2=rev, 3=sat 4 Temp '' 12 Device operating temperature 5 Mode simtype_nonlin -1 Simulation Mode for This Device END_ELEMENT BPF_Bessel BPF_Bessel 12 1 Fcenter 1.5GHz 0 Passband Center Frequency 2 BWpass 1.0GHz 0 Passband Edge-to-Edge Width 3 Apass 3dB 13 Attenuation at Stopband Edges, in dB 4 GDpass 0.9 -1 Group Delay Rolloff at Passband Edge, 0 < GDpass < 1 5 StopType OPEN -2 Input is open or short for stopband 6 MaxRej '' 13 Maximum Rejection Level , in dB 7 N 0 -1 Filter Order (if N > 0, it overwrites GDpass) 8 IL 0dB 13 Passband Insertion Loss, in dB 9 Qu 1E308 -1 Unloaded Quality Factor 10 Z1 50ohm 1 Input Port Reference Impedance 11 Z2 50ohm 1 Output Port Reference Impedance 12 Temp '' 12 Temperature in Degree Celsius END_ELEMENT BPF_Butterworth BPF_Butterworth 13 1 Fcenter 1.5GHz 0 Passband Center Frequency 2 BWpass 1.0GHz 0 Passband Edge-to-Edge Width 3 Apass 3dB 13 Attenuation at Passband Edges, in dB 4 BWstop 1.2GHz 0 Stopband Edge-to-Edge Width 5 Astop 20dB 13 Attenuation at Stopband Edges, in dB 6 StopType OPEN -2 Input is open or short for stopband 7 MaxRej '' 13 Maximum Rejection Level , in dB 8 N 0 -1 Filter Order (if N > 0, it overwrites BWstop and Astop) 9 IL 0dB 13 Passband Insertion Loss, in dB 10 Qu 1E308 -1 Unloaded Quality Factor 11 Z1 50ohm 1 Input Port Reference Impedance 12 Z2 50ohm 1 Output Port Reference Impedance 13 Temp '' 12 Temperature in Degree Celsius END_ELEMENT BPF_Chebyshev BPF_Chebyshev 14 1 Fcenter 1.5GHz 0 Passband Center Frequency 2 BWpass 1.0GHz 0 Passband Edge-to-Edge Width 3 Apass 1dB 13 Attenuation at Passband Edges, in dB 4 Ripple 1dB 13 Passband Ripple, in dB 5 BWstop 1.2GHz 0 Stopband Edge-to-Edge Width 6 Astop 20dB 13 Attenuation at Stopband Edges, in dB 7 StopType OPEN -2 Input is open or short for stopband 8 MaxRej '' 13 Maximum Rejection Level , in dB 9 N 0 -1 Filter Order (if N > 0, it overwrites BWstop and Astop) 10 IL 0dB 13 Passband Insertion Loss, in dB 11 Qu 1E308 -1 Unloaded Quality Factor 12 Z1 50ohm 1 Input Port Reference Impedance 13 Z2 50ohm 1 Output Port Reference Impedance 14 Temp '' 12 Temperature in Degree Celsius END_ELEMENT BPF_Elliptic BPF_Elliptic 13 1 Fcenter 1.5GHz 0 Passband Center Frequency 2 BWpass 1.0GHz 0 Passband Edge-to-Edge Width 3 Ripple 1dB 13 Passband Ripple, in dB 4 BWstop 1.2GHz 0 Stopband Edge-to-Edge Width 5 Astop 20dB 13 Attenuation at Stopband Edges, in dB 6 StopType OPEN -2 Input is open or short for stopband 7 MaxRej '' 13 Maximum Rejection Level , in dB 8 N 0 -1 Filter Order (if N > 0, it overwrites BWstop and Astop) 9 IL 0dB 13 Passband Insertion Loss, in dB 10 Qu 1E308 -1 Unloaded Quality Factor 11 Z1 50ohm 1 Input Port Reference Impedance 12 Z2 50ohm 1 Output Port Reference Impedance 13 Temp '' 12 Temperature in Degree Celsius END_ELEMENT BPF_Gaussian BPF_Gaussian 12 1 Fcenter 1.5GHz 0 Passband Center Frequency 2 BWpass 1.0GHz 0 Passband Edge-to-Edge Width 3 Apass 3dB 13 Attenuation at Stopband Edges, in dB 4 GDpass 0.9 -1 Group Delay Rolloff at Passband Edge, 0 < GDpass < 1 5 StopType OPEN -2 Input is open or short for stopband 6 MaxRej '' 13 Maximum Rejection Level , in dB 7 N 0 -1 Filter Order (if N > 0, it overwrites GDpass) 8 IL 0dB 13 Passband Insertion Loss, in dB 9 Qu 1E308 -1 Unloaded Quality Factor 10 Z1 50ohm 1 Input Port Reference Impedance 11 Z2 50ohm 1 Output Port Reference Impedance 12 Temp '' 12 Temperature in Degree Celsius END_ELEMENT BPF_PoleZero BPF_PoleZero 8 1 Poles 'list(-0.7+j*0.7, -0.7-j*0.7)' -1 List of Complex Poles 2 Zeros '' -1 List of Complex Zeros 3 Gain 1.0 -1 Gain Factor 4 Fcenter 1GHz 0 Passband Edge Frequency 5 BWpass 1.0GHz 0 Passband Edge-to-Edge Width 6 StopType OPEN -2 Input is open or short for stopband 7 Z1 50ohm 1 Input Port Reference Impedance 8 Z2 50ohm 1 Output Port Reference Impedance END_ELEMENT BPF_Polynomial BPF_Polynomial 8 1 Numerator 1 -1 List of Numerator Coefficients 2 Denominator list(1,1.4,1) -1 List of Denominator Coefficients 3 Gain 1.0 -1 Gain Factor 4 Fcenter 1GHz 0 Passband Edge Frequency 5 BWpass 1.0GHz 0 Passband Edge-to-Edge Width 6 StopType OPEN -2 Input is open or short for stopband 7 Z1 50ohm 1 Input Port Reference Impedance 8 Z2 50ohm 1 Output Port Reference Impedance END_ELEMENT BPF_RaisedCos BPF_RaisedCos 10 1 Alpha 0.35 -1 Rolloff factor defining filters excess bandwidth, 0 <= Alpha <= 1 2 Fcenter 1.5GHz 0 Passband Center Frequency 3 SymbolRate 24.3KHz 0 Digital symbol rate defining filters bandwidth 4 DelaySymbols 5 -1 Number of symbols delayed by the filter 5 Exponent 0.5 -1 Exponent Factor ( 0<= Exponent <= 1 ) 6 DutyCycle 100 -1 Pulse duty cycle in percent, used for sinc(x) correction 7 SincE y_n0 -2 Yes for applying Exponent Factor on sinc(x) correction 8 Gain 1.0 -1 Gain Factor 9 Zout 50ohm 1 Output Impedance 10 WindowType 0 -1 Window Type, 0=None, 1=Hann, 2=Hamming END_ELEMENT BSF_Bessel BSF_Bessel 12 1 Fcenter 1.5GHz 0 Stopband Center Frequency 2 BWpass 1.0GHz 0 Passband Edge-to-Edge Width 3 Apass 3dB 13 Attenuation at Passband Edges, in dB 4 GDpass 0.9 -1 Group Delay Rolloff at Passband Edge, 0 < GDpass < 1 5 StopType OPEN -2 Input is open or short for stopband 6 MaxRej '' 13 Maximum Rejection Level , in dB 7 N 0 -1 Filter Order (if N > 0, it overwrites GDpass) 8 IL 0dB 13 Passband Insertion Loss, in dB 9 Qu 1E308 -1 Unloaded Quality Factor 10 Z1 50ohm 1 Input Port Reference Impedance 11 Z2 50ohm 1 Output Port Reference Impedance 12 Temp '' 12 Temperature in Degree Celsius END_ELEMENT BSF_Butterworth BSF_Butterworth 13 1 Fcenter 1.5GHz 0 Stopband Center Frequency 2 BWstop 1.0GHz 0 Stopband Edge-to-Edge Width 3 Astop 20dB 13 Attenuation at Stopband Edges, in dB 4 BWpass 1.2GHz 0 Passband Edge-to-Edge Width 5 Apass 3dB 13 Attenuation at Passband Edges, in dB 6 StopType OPEN -2 Input is open or short for stopband 7 MaxRej '' 13 Maximum Rejection Level , in dB 8 N 0 -1 Filter Order (if N > 0, it overwrites BWstop and Astop) 9 IL 0dB 13 Passband Insertion Loss, in dB 10 Qu 1E308 -1 Unloaded Quality Factor 11 Z1 50ohm 1 Input Port Reference Impedance 12 Z2 50ohm 1 Output Port Reference Impedance 13 Temp '' 12 Temperature in Degree Celsius END_ELEMENT BSF_Chebyshev BSF_Chebyshev 14 1 Fcenter 1.5GHz 0 Stopband Center Frequency 2 BWstop 1.0GHz 0 Stopband Edge-to-Edge Width 3 Astop 20dB 13 Attenuation at Stopband Edges, in dB 4 Ripple 1dB 13 Stopband Ripple, in dB 5 BWpass 1.2GHz 0 Passband Edge-to-Edge Width 6 Apass 1dB 13 Attenuation at Passband Edges, in dB 7 StopType OPEN -2 Input is open or short for stopband 8 MaxRej '' 13 Maximum Rejection Level , in dB 9 N 0 -1 Filter Order (if N > 0, it overwrites BWstop and Astop) 10 IL 0dB 13 Passband Insertion Loss, in dB 11 Qu 1E308 -1 Unloaded Quality Factor 12 Z1 50ohm 1 Input Port Reference Impedance 13 Z2 50ohm 1 Output Port Reference Impedance 14 Temp '' 12 Temperature in Degree Celsius END_ELEMENT BSF_Elliptic BSF_Elliptic 14 1 Fcenter 1.5GHz 0 Stopband Center Frequency 2 BWstop 1.0GHz 0 Stopband Edge-to-Edge Width 3 Astop 20dB 13 Attenuation at Stopband Edges, in dB 4 Ripple 1dB 13 Stopband Ripple, in dB 5 BWpass 1.2GHz 0 Passband Edge-to-Edge Width 6 Apass 1dB 13 Attenuation at Passband Edges, in dB 7 StopType OPEN -2 Input is open or short for stopband 8 MaxRej '' 13 Maximum Rejection Level , in dB 9 N 0 -1 Filter Order (if N > 0, it overwrites BWstop and Astop) 10 IL 0dB 13 Passband Insertion Loss, in dB 11 Qu 1E308 -1 Unloaded Quality Factor 12 Z1 50ohm 1 Input Port Reference Impedance 13 Z2 50ohm 1 Output Port Reference Impedance 14 Temp '' 12 Temperature in Degree Celsius END_ELEMENT BSF_Gaussian BSF_Gaussian 12 1 Fcenter 1.5GHz 0 Stopband Center Frequency 2 BWpass 1.0GHz 0 Passband Edge-to-Edge Width 3 Apass 3dB 13 Passband Edge-to-Edge Width 4 GDpass 0.9 -1 Group Delay Rolloff at Passband Edge, 0 < GDpass < 1 5 StopType OPEN -2 Input is open or short for stopband 6 MaxRej '' 13 Maximum Rejection Level , in dB 7 N 0 -1 Filter Order (if N > 0, it overwrites GDpass) 8 IL 0dB 13 Passband Insertion Loss, in dB 9 Qu 1E308 -1 Unloaded Quality Factor 10 Z1 50ohm 1 Input Port Reference Impedance 11 Z2 50ohm 1 Output Port Reference Impedance 12 Temp '' 12 Temperature in Degree Celsius END_ELEMENT BSF_PoleZero BSF_PoleZero 8 1 Poles 'list(-0.7+j*0.7, -0.7-j*0.7)' -1 List of Complex Poles 2 Zeros '' -1 List of Complex Zeros 3 Gain 1.0 -1 Gain Factor 4 Fcenter 1GHz 0 Passband Edge Frequency 5 BWpass 1.0GHz 0 Passband Edge-to-Edge Width 6 StopType OPEN -2 Input is open or short for stopband 7 Z1 50ohm 1 Input Port Reference Impedance 8 Z2 50ohm 1 Output Port Reference Impedance END_ELEMENT BSF_Polynomial BSF_Polynomial 8 1 Numerator 1 -1 List of Numerator Coefficients 2 Denominator list(1,1.4,1) -1 List of Denominator Coefficients 3 Gain 1.0 -1 Gain Factor 4 Fcenter 1GHz 0 Passband Edge Frequency 5 BWpass 1.0GHz 0 Passband Edge-to-Edge Width 6 StopType OPEN -2 Input is open or short for stopband 7 Z1 50ohm 1 Input Port Reference Impedance 8 Z2 50ohm 1 Output Port Reference Impedance END_ELEMENT BSF_RaisedCos BSF_RaisedCos 10 1 Alpha 0.35 -1 Rolloff factor defining filters excess bandwidth, 0 <= Alpha <= 1 2 Fcenter 1.5GHz 0 Passband Center Frequency 3 SymbolRate 24.3KHz 0 Digital symbol rate defining filters bandwidth 4 DelaySymbols 5 -1 Number of symbols delayed by the filter 5 Exponent 0.5 -1 Exponent Factor ( 0<= Exponent <= 1 ) 6 DutyCycle 100 -1 Pulse duty cycle in percent, used for sinc(x) correction 7 SincE y_n0 -2 Yes for applying Exponent Factor on sinc(x) correction 8 Gain 1.0 -1 Gain Factor 9 Zout 50ohm 1 Output Impedance 10 WindowType 0 -1 Window Type, 0=None, 1=Hann, 2=Hamming END_ELEMENT BSIM1_Model BSIM1_Model 90 1 NMOS y_n1 -1 Model Type - YES or NO 2 PMOS y_n0 -1 Model Type - YES or NO 3 Idsmod 4 -1 1=LEVEL1 2=LEVEL2 3=LEVEL3 4=BSIM1 5=BSIM2 6=NMOD 8=BSIM3 4 Rsh '' -1 Drain and Source Diffusion Sheet Resistance, Ohm/Sq 5 Js '' 10 Gate Saturation Current, A 6 Temp '' 12 Parameter Measurement temperature, Celsius 7 Muz '' -1 Surface Mobility at VDS=0 VGS=VTH, cm^2/(V*s) 8 Dl '' 5 Shortening of Channel, m 9 Dw '' 5 Narrowing of Channel, m 10 Vdd '' 9 Measurement Drain Bias Range, V 11 Vfb '' 9 Flat-Band Voltage, V 12 Lvfb '' -1 Length Dependence of Vfb, um*V 13 Wvfb '' -1 Width Dependence of Vfb, um*V 14 Phi '' 9 Surface Potential, V 15 Lphi '' -1 Length Dependence of Phi, um*V 16 Wphi '' -1 Width Dependence of Phi, um*V 17 K1 '' -1 Body Effect Coefficient, V^(1/2) 18 Lk1 '' -1 Length Dependence of K1, um*V^(1/2) 19 Wk1 '' -1 Width Dependence of K1, um*V^(1/2) 20 K2 '' -1 Drain-Source Depletion Charge Sharing Coeff. 21 Lk2 '' -1 Length Dependence of K2, um 22 Wk2 '' -1 Width Dependence of K2, um 23 Eta '' -1 Zero-Bias Drain-Induced Barrier Lowering Coeff. 24 Leta '' -1 Length Dependence of Eta, um 25 Weta '' -1 Width Dependence of Eta, um 26 U0 '' -1 Transverse Field Mobility Degradation Coeff., 1/V 27 Lu0 '' -1 Length Dependence of U0, um/V 28 Wu0 '' -1 Width Dependence of U0, um/V 29 U1 '' -1 Zero-Bias Velocity Saturation Coeff., um/V 30 Lu1 '' -1 Length Dependence of U1, um^2/V 31 Wu1 '' -1 Width Dependence of U1, um^2/V 32 X2mz '' -1 Sens. of Mobility to Substrate Bias, cm^2/(V^2*s) 33 Lx2mz '' -1 Length Dependence of X2mz, um*cm^2/(V^2*s) 34 Wx2mz '' -1 Width Dependence of X2mz, um*cm^2/(V^2*s) 35 X2e '' -1 Sens. of Eta to Substrate Bias, 1/V 36 Lx2e '' -1 Length Dependence of X2e, um/V 37 Wx2e '' -1 Width Dependence of X2e, um/V 38 X3e '' -1 Sens. of Eta to Drain Bias, 1/V 39 Lx3e '' -1 Length Dependence of X3e, um/V 40 Wx3e '' -1 Width Dependence of X3e, um/V 41 X2u0 '' -1 Sens. of U0 to Substrate Bias, 1/V^2 42 Lx2u0 '' -1 Length Dependence of X2u0, um/V^2 43 Wx2u0 '' -1 Width Dependence of X2u0, um/V^2 44 X2u1 '' -1 Sens. of U1 to Substrate Bias, um/V^2 45 Lx2u1 '' -1 Length Dependence of X2u1, um^2/V^2 46 Wx2u1 '' -1 Width Dependence of X2u1, um^2/V^2 47 X3u1 '' -1 Sens. of U1 to Drain Bias, um/V^2 48 Lx3u1 '' -1 Length Dependence of X3u1, um^2/V^2 49 Wx3u1 '' -1 Width Dependence of X3u1, um^2/V^2 50 Mus '' -1 Mobility at VDS=VDD VGS=VTH, cm^2/(V*s) 51 Lmus '' -1 Length Dependence of Mus, um*cm^2/(V*s) 52 Wmus '' -1 Width Dependence of Mus, um*cm^2/(V*s) 53 X2ms '' -1 Sens. of Mus to Substrate Bias, cm^2/(V^2*s) 54 Lx2ms '' -1 Length Dependence of X2ms, um*cm^2/(V^2*s) 55 Wx2ms '' -1 Width Dependence of X2ms, um*cm^2/(V^2*s) 56 X3ms '' -1 Sens. of Mus to Drain Bias, cm^2/(V^2*s) 57 Lx3ms '' -1 Length Dependence of X3ms, um*cm^2/(V^2*s) 58 Wx3ms '' -1 Width Dependence of X3ms, um*cm^2/(V^2*s) 59 N0 '' -1 Zero-Bias Subthreshold Slope Coeff. 60 Ln0 '' -1 Length Dependence of N0, um 61 Wn0 '' -1 Width Dependence of N0, um 62 Nb '' -1 Sens. of N0 to Substrate Bias, 1/V 63 Lnb '' -1 Length Dependence of Nb, um/V 64 Wnb '' -1 Width Dependence of Nb, um/V 65 Nd '' -1 Sens. of N0 to Drain Bias, 1/V 66 Lnd '' -1 Length Dependence of Nd, um/V 67 Wnd '' -1 Width Dependence of Nd, um/V 68 Tox '' -1 Oxide Thickness, um 69 Cj '' -1 Zero-bias Bulk Junction Cap., F/m 70 Mj '' -1 Junction grading coefficient 71 Cjsw '' -1 Zero-bias Bulk Junction Sidewall Cap., F/m 72 Mjsw '' -1 Junction Sidewall grading coefficient 73 Pb '' 9 Bulk Junction Potential, V 74 Pbsw '' 9 Bulk Side Junction Potential, V 75 Cgso '' -1 G-S Overlap Cap., F/m 76 Cgdo '' -1 G-D Overlap Cap., F/m 77 Cgbo '' -1 G-B Overlap Cap., F/m 78 Xpart '' -1 Coefficient of Channel Charge Share 79 Kf '' -1 Flicker Noise Coefficient 80 Af '' -1 Flicker Noise Exponent 81 Ffe '' -1 Flicker noise frequency exponent 82 Rg '' 1 Gate Resistance, Ohm 83 N '' -1 Bulk P-N Emission Coefficient 84 Imax '' 10 Explosion current, A 85 wVsubfwd '' 9 Substrate Junction Forward Bias (warning), V 86 wBvsub '' 9 Substrate Junction Reverse Breakdown Voltage (warning), V 87 wBvg '' 9 Gate Oxide Breakdown Voltage (warning), V 88 wBvds '' 9 Drain-Source Breakdown Voltage (warning), V 89 wIdsmax '' 10 Maximum Drain-Source Current (warning), A 90 wPmax '' 8 Maximum Power Dissipation (warning), W END_ELEMENT BSIM2_Model BSIM2_Model 137 1 NMOS y_n1 -1 Model Type - YES or NO 2 PMOS y_n0 -1 Model Type - YES or NO 3 Idsmod 5 -1 1=LEVEL1 2=LEVEL2 3=LEVEL3 4=BSIM1 5=BSIM2 6=NMOD 8=BSIM3 4 Rsh '' -1 Drain and Source Diffusion Sheet Resistance, Ohm/Sq 5 Js '' -1 Gate Saturation Current, A/m^2 6 Mu0 '' -1 Surface Mobility at VDS=0 VGS=VTH, cm^2/(V*s) 7 Dl '' 5 Shortening of Channel, m 8 Dw '' 5 Narrowing of Channel, m 9 Vdd '' 9 Measurement Drain Bias Range, V 10 Vgg '' 9 Measurement Gate Bias Range, V 11 Vbb '' 9 Measurement Bulk Bias Range, V 12 Temp '' 12 Parameter Measurement temperature, Celsius 13 Tox '' -1 Oxide Thickness, um 14 Cj '' -1 Zero-bias Bulk Junction Cap., F/m^2 15 Mj '' -1 Junction grading coefficient 16 Cjsw '' -1 Zero-bias Bulk Junction Sidewall Cap., F/m 17 Mjsw '' -1 Junction Sidewall grading coefficient 18 Pb '' 9 Bulk Junction Potential, V 19 Pbsw '' 9 Bulk Side Junction Potential, V 20 Cgso '' -1 G-S Overlap Cap., F/m 21 Cgdo '' -1 G-D Overlap Cap., F/m 22 Cgbo '' -1 G-B Overlap Cap., F/m 23 Xpart '' -1 Coefficient of Channel Charge Share 24 Vfb '' 9 Flat-Band Voltage, V 25 Lvfb '' -1 Length Dependence of Vfb, um*V 26 Wvfb '' -1 Width Dependence of Vfb, um*V 27 Phi '' 9 Surface Potential, V 28 Lphi '' -1 Length Dependence of Phi, um*V 29 Wphi '' -1 Width Dependence of Phi, um*V 30 K1 '' -1 Body Effect Coefficient, V^(1/2) 31 Lk1 '' -1 Length Dependence of K1, um*V^(1/2) 32 Wk1 '' -1 Width Dependence of K1, um*V^(1/2) 33 K2 '' -1 Drain-Source Depletion Charge Sharing Coeff. 34 Lk2 '' -1 Length Dependence of K2, um 35 Wk2 '' -1 Width Dependence of K2, um 36 Eta0 '' -1 Zero-Bias Drain-Induced Barrier Lowering Coeff. 37 Leta0 '' -1 Length Dependence of Eta, um 38 Weta0 '' -1 Width Dependence of Eta, um 39 Ua0 '' -1 Transverse Field Mobility Degradation Coeff., 1/V 40 Lua0 '' -1 Length Dependence of Ua0, um/V 41 Wua0 '' -1 Width Dependence of Ua0, um/V 42 U10 '' -1 Zero-Bias Velocity Saturation Coeff., um/V 43 Lu10 '' -1 Length Dependence of U10, um^2/V 44 Wu10 '' -1 Width Dependence of U10, um^2/V 45 Mu0b '' -1 Sens. of Mobility to Substrate Bias, cm^2/(V^2*s) 46 Lmu0b '' -1 Length Dependence of Mu0b, um*cm^2/(V^2*s) 47 Wmu0b '' -1 Width Dependence of Mu0b, um*cm^2/(V^2*s) 48 Etab '' -1 Sens. of Eta to Substrate Bias, 1/V 49 Letab '' -1 Length Dependence of Etab, um/V 50 Wetab '' -1 Width Dependence of Etab, um/V 51 Uab '' -1 Sens. of Ua0 to Substrate Bias, 1/V^2 52 Luab '' -1 Length Dependence of Uab, um/V^2 53 Wuab '' -1 Width Dependence of Uab, um/V^2 54 U1b '' -1 Sens. of U1 to Substrate Bias, um/V^2 55 Lu1b '' -1 Length Dependence of U1b, um^2/V^2 56 Wu1b '' -1 Width Dependence of U1b, um^2/V^2 57 U1d '' -1 Sens. of U1 to Drain Bias, um/V^2 58 Lu1d '' -1 Length Dependence of U1d, um^2/V^2 59 Wu1d '' -1 Width Dependence of U1d, um^2/V^2 60 Mus0 '' -1 Mobility at VDS=VDD VGS=VTH, cm^2/(V*s) 61 Lmus0 '' -1 Length Dependence of Mus0, um*cm^2/(V*s) 62 Wmus0 '' -1 Width Dependence of Mus0, um*cm^2/(V*s) 63 Musb '' -1 Sens. of Mus to Substrate Bias, cm^2/(V^2*s) 64 Lmusb '' -1 Length Dependence of Musb, um*cm^2/(V^2*s) 65 Wmusb '' -1 Width Dependence of Musb, um*cm^2/(V^2*s) 66 N0 '' -1 Zero-Bias Subthreshold Slope Coeff. 67 Ln0 '' -1 Length Dependence of N0, um 68 Wn0 '' -1 Width Dependence of N0, um 69 Nb '' -1 Sens. of N0 to Substrate Bias, 1/V 70 Lnb '' -1 Length Dependence of Nb, um/V 71 Wnb '' -1 Width Dependence of Nb, um/V 72 Nd '' -1 Sens. of N0 to Drain Bias, 1/V 73 Lnd '' -1 Length Dependence of Nd, um/V 74 Wnd '' -1 Width Dependence of Nd, um/V 75 Mu20 '' -1 Empirical Parameter in Beta0 Expression 76 Lmu20 '' -1 Length Dependence of Mu20, um 77 Wmu20 '' -1 Width Dependence of Mu20, um 78 Mu2b '' -1 Sens. of Mu20 to Substrate Bias, 1/V 79 Lmu2b '' -1 Length Dependence of Mu2b, um/V 80 Wmu2b '' -1 Width Dependence of Mu2b, um/V 81 Mu2g '' -1 Sens. of Mu20 to Gate Bias, 1/V 82 Lmu2g '' -1 Length Dependence of Mu2g, um/V 83 Wmu2g '' -1 Width Dependence of Mu2g, um/V 84 Mu30 '' -1 Linear Empirical Parameter in Beta0 Expression, cm^2/(V^2*s) 85 Lmu30 '' -1 Length Dependence of Mu30, um*cm^2/(V^2*s) 86 Wmu30 '' -1 Width Dependence of Mu30, um*cm^2/(V^2*s) 87 Mu3g '' -1 Sens. of Mu3 to Gate Bias, cm^2/(V^3*s) 88 Lmu3g '' -1 Length Dependence of Mu3g, um*cm^2/(V^3*s) 89 Wmu3g '' -1 Width Dependence of Mu3g, um*cm^2/(V^3*s) 90 Mu40 '' -1 Quadratic Empirical Parameter in Beta0 Expression, cm^2/(V^3*s) 91 Lmu40 '' -1 Length Dependence of Mu40, um*cm^2/(V^3*s) 92 Wmu40 '' -1 Width Dependence of Mu40, um*cm^2/(V^3*s) 93 Mu4b '' -1 Sens. of Mu4 to Substrate Bias, cm^2/(V^4*s) 94 Lmu4b '' -1 Length Dependence of Mu4b, um*cm^2/(V^4*s) 95 Wmu4b '' -1 Width Dependence of Mu4b, um*cm^2/(V^4*s) 96 Mu4g '' -1 Sens. of Mu4 to Gate Bias, cm^2/(V^4*s) 97 Lmu4g '' -1 Length Dependence of Mu4g, um*cm^2/(V^4*s) 98 Wmu4g '' -1 Width Dependence of Mu4g, um*cm^2/(V^4*s) 99 Ub0 '' -1 Mobility Reduction to Vertical Field at Vbs=0, 1/V^2 100 Lub0 '' -1 Length Dependence of Ub0, um/V^2 101 Wub0 '' -1 Width Dependence of Ub0, um/V^2 102 Ubb '' -1 Sens. of Ub to Substrate Bias, 1/V^3 103 Lubb '' -1 Length Dependence of Ubb, um/V^3 104 Wubb '' -1 Width Dependence of Ubb, um/V^3 105 Vof0 '' 9 Threshold Voltage Offset in the Subthreshold Region, V 106 Lvof0 '' -1 Length Dependence of Vof0, um*V 107 Wvof0 '' -1 Width Dependence of Vof0, um*V 108 Vofb '' -1 Sens. of Vof to Substrate Bias 109 Lvofb '' -1 Length Dependence of Vofb, um 110 Wvofb '' -1 Width Dependence of Vofb, um 111 Vofd '' -1 Sens. of Vof to Substrate Bias 112 Lvofd '' -1 Length Dependence of Vofd, um 113 Wvofd '' -1 Width Dependence of Vofd, um 114 Ai0 '' -1 Hot-Electron-Induced Rout Degradation Coeff. 115 Lai0 '' -1 Length Dependence of Ai0, um 116 Wai0 '' -1 Width Dependence of Ai0, um 117 Aib '' -1 Sens. of Vof to Substrate Bias 118 Laib '' -1 Length Dependence of Aib, um 119 Waib '' -1 Width Dependence of Aib, um 120 Vghigh '' 9 Upper Bound for the Transition Region, V 121 Lvghigh '' -1 Length Dependence of Vghigh, um*V 122 Wvghigh '' -1 Width Dependence of Vghigh, um*V 123 Vglow '' 9 Upper Bound for the Transition Region, V 124 Lvglow '' -1 Length Dependence of Vglow, um*V 125 Wvglow '' -1 Width Dependence of Vglow, um*V 126 Kf '' -1 Flicker Noise Coefficient 127 Af '' -1 Flicker Noise Exponent 128 Ffe '' -1 Flicker noise frequency exponent 129 Rg '' 1 Gate Resistance, Ohm 130 N '' -1 Bulk P-N Emission Coefficient 131 Imax '' 10 Explosion current, A 132 wVsubfwd '' 9 Substrate Junction Forward Bias (warning), V 133 wBvsub '' 9 Substrate Junction Reverse Breakdown Voltage (warning), V 134 wBvg '' 9 Gate Oxide Breakdown Voltage (warning), V 135 wBvds '' 9 Drain-Source Breakdown Voltage (warning), V 136 wIdsmax '' 10 Maximum Drain-Source Current (warning), A 137 wPmax '' 8 Maximum Power Dissipation (warning), W END_ELEMENT BSIM3_Model BSIM3_Model 362 1 NMOS y_n1 -1 Model Type - YES or NO 2 PMOS y_n0 -1 Model Type - YES or NO 3 Idsmod 8 -1 1=LEVEL1 2=LEVEL2 3=LEVEL3 4=BSIM1 5=BSIM2 6=NMOD 8=BSIM3 4 Version 3.1 -1 Parameter for Model Version 5 Mobmod '' -1 Mobility Model Selector 6 Capmod '' -1 Capacitance Model Selector 7 Noimod '' -1 Noise Model Selector 8 Paramchk '' -1 Model Parameter Checking Selector 9 Binunit '' -1 Bin Unit Selector 10 Rg '' 1 Gate Resistance, Ohm 11 Rsh '' -1 Drain and Source Diffusion Sheet Resistance, Ohm/Sq 12 Nj '' -1 Bulk P-N Emission Coefficient 13 Xti '' -1 Junction Current Temperature Exponent 14 Js '' -1 Gate Saturation Current, A/m^2 15 Jsw '' -1 Sidewall Junction Reverse Saturation Current, A/m^2 16 Lint '' 5 Length Reduction Parameter, m 17 Ll '' 5 Length Reduction Parameter, m 18 Lln '' -1 Length Reduction Parameter 19 Lw '' 5 Length Reduction Parameter, m 20 Lwn '' -1 Length Reduction Parameter 21 Lwl '' 5 Length Reduction Parameter, m 22 Wint '' 5 Width Reduction Parameter, m 23 Wl '' 5 Width Reduction Parameter, m 24 Wln '' -1 Width Reduction Parameter 25 Ww '' 5 Width Reduction Parameter, m 26 Wwn '' -1 Width Reduction Parameter 27 Wwl '' 5 Width Reduction Parameter, m 28 Tnom '' 12 Parameter Measurement temperature, Celsius 29 Tox '' 5 Oxide Thickness, m 30 Cj '' -1 Zero-bias Bulk Junction Cap., F/m^2 31 Mj '' -1 Junction grading coefficient 32 Cjsw '' -1 Zero-bias Bulk Junction Sidewall Cap., F/m 33 Mjsw '' -1 Junction Sidewall grading coefficient 34 Pb '' 9 Bulk Junction Potential, V 35 Pbsw '' 9 Bulk Side Junction Potential, V 36 Cjswg '' -1 Source/Drain (Gate Side) Sidewall Cap., F/m 37 Mjswg '' -1 Source/Drain (Gate Side) Sidewall grading coefficient 38 Pbswg '' 9 Source/Drain (Gate Side) Sidewall Junction Potential, V 39 Cgso '' -1 G-S Overlap Cap., F/m 40 Cgdo '' -1 G-D Overlap Cap., F/m 41 Cgbo '' -1 G-B Overlap Cap., F/m 42 Xpart '' -1 Coefficient of Channel Charge Share 43 Dwg '' -1 Coeff. of Weffs Gate Bias Dependence, m/V 44 Ldwg '' -1 Length Dependence of Dwg 45 Wdwg '' -1 Width Dependence of Dwg 46 Pdwg '' -1 Cross Dependence of Dwg 47 Dwb '' -1 Coeff. of Weffs Bulk Bias Dependence, m/V^(1/2) 48 Ldwb '' -1 Length Dependence of Dwb 49 Wdwb '' -1 Width Dependence of Dwb 50 Pdwb '' -1 Cross Dependence of Dwb 51 Nch '' -1 Channel Doping Concentration, 1/cm^3 52 Lnch '' -1 Length Dependence of Nch 53 Wnch '' -1 Width Dependence of Nch 54 Pnch '' -1 Cross Dependence of Nch 55 Nsub '' -1 Substrate Doping Concentration, 1/cm^3 56 Lnsub '' -1 Length Dependence of Nsub 57 Wnsub '' -1 Width Dependence of Nsub 58 Pnsub '' -1 Cross Dependence of Nsub 59 Ngate '' -1 Gate Doping Concentration, 1/cm^3 60 Lngate '' -1 Length Dependence of Ngate 61 Wngate '' -1 Width Dependence of Ngate 62 Pngate '' -1 Cross Dependence of Ngate 63 Gamma1 '' -1 Body-Effect Coeff. near the Interface, V^(1/2) 64 Lgamma1 '' -1 Length Dependence of Gamma1 65 Wgamma1 '' -1 Width Dependence of Gamma1 66 Pgamma1 '' -1 Cross Dependence of Gamma1 67 Gamma2 '' -1 Body-Effect Coeff. in the Bulk, V^(1/2) 68 Lgamma2 '' -1 Length Dependence of Gamma2 69 Wgamma2 '' -1 Width Dependence of Gamma2 70 Pgamma2 '' -1 Cross Dependence of Gamma2 71 Xt '' 5 Doping Depth, m 72 Lxt '' -1 Length Dependence of Xt 73 Wxt '' -1 Width Dependence of Xt 74 Pxt '' -1 Cross Dependence of Xt 75 Vbm '' 9 Maximum Body Voltage, V 76 Lvbm '' -1 Length Dependence of Vbm 77 Wvbm '' -1 Width Dependence of Vbm 78 Pvbm '' -1 Cross Dependence of Vbm 79 Vbx '' 9 Vth Transition Body Voltage, V 80 Lvbx '' -1 Length Dependence of Vbx 81 Wvbx '' -1 Width Dependence of Vbx 82 Pvbx '' -1 Cross Dependence of Vbx 83 Xj '' 5 Junction Depth, m 84 Lxj '' -1 Length Dependence of Xj 85 Wxj '' -1 Width Dependence of Xj 86 Pxj '' -1 Cross Dependence of Xj 87 U0 '' -1 Low-Field Mobility at Tnom, cm^2/(V*s) 88 Lu0 '' -1 Length Dependence of U0 89 Wu0 '' -1 Width Dependence of U0 90 Pu0 '' -1 Cross Dependence of U0 91 Vth0 '' 9 Zero-Bias Threshold Voltage, V 92 Lvth0 '' -1 Length Dependence of Vth0 93 Wvth0 '' -1 Width Dependence of Vth0 94 Pvth0 '' -1 Cross Dependence of Vth0 95 K1 '' -1 First-Order Body Effect Coefficient, V^(1/2) 96 Lk1 '' -1 Length Dependence of K1 97 Wk1 '' -1 Width Dependence of K1 98 Pk1 '' -1 Cross Dependence of K1 99 K2 '' -1 Second-Order Body Effect Coefficient 100 Lk2 '' -1 Length Dependence of K2 101 Wk2 '' -1 Width Dependence of K2 102 Pk2 '' -1 Cross Dependence of K2 103 K3 '' -1 Narrow Width Effect Coefficient 104 Lk3 '' -1 Length Dependence of K3 105 Wk3 '' -1 Width Dependence of K3 106 Pk3 '' -1 Cross Dependence of K3 107 K3b '' -1 Narrow Width Effect Coefficient, 1/V 108 Lk3b '' -1 Length Dependence of K3b 109 Wk3b '' -1 Width Dependence of K3b 110 Pk3b '' -1 Cross Dependence of K3b 111 W0 '' 5 Narrow Width Effect Parameter, m 112 Lw0 '' -1 Length Dependence of W0 113 Ww0 '' -1 Width Dependence of W0 114 Pw0 '' -1 Cross Dependence of W0 115 Nlx '' 5 Lateral Non-Uniform Doping Coeff., m 116 Lnlx '' -1 Length Dependence of Nlx 117 Wnlx '' -1 Width Dependence of Nlx 118 Pnlx '' -1 Cross Dependence of Nlx 119 Dvt0 '' -1 First Coeff. of Short-Channel Effect on Vth 120 Ldvt0 '' -1 Length Dependence of Dvt0 121 Wdvt0 '' -1 Width Dependence of Dvt0 122 Pdvt0 '' -1 Cross Dependence of Dvt0 123 Dvt1 '' -1 Second Coeff. of Short-Channel Effect on Vth 124 Ldvt1 '' -1 Length Dependence of Dvt1 125 Wdvt1 '' -1 Width Dependence of Dvt1 126 Pdvt1 '' -1 Cross Dependence of Dvt1 127 Dvt2 '' -1 Body-Bias Coeff. of Short-Channel Effect on Vth, 1/V 128 Ldvt2 '' -1 Length Dependence of Dvt2 129 Wdvt2 '' -1 Width Dependence of Dvt2 130 Pdvt2 '' -1 Cross Dependence of Dvt2 131 Dvt0w '' -1 First Coeff. of Narrow-Width Effect on Vth 132 Ldvt0w '' -1 Length Dependence of Dvt0w 133 Wdvt0w '' -1 Width Dependence of Dvt0w 134 Pdvt0w '' -1 Cross Dependence of Dvt0w 135 Dvt1w '' -1 Second Coeff. of Narrow-Width Effect on Vth 136 Ldvt1w '' -1 Length Dependence of Dvt1w 137 Wdvt1w '' -1 Width Dependence of Dvt1w 138 Pdvt1w '' -1 Cross Dependence of Dvt1w 139 Dvt2w '' -1 Body-Bias Coeff. of Narrow-Width Effect on Vth, 1/V 140 Ldvt2w '' -1 Length Dependence of Dvt2w 141 Wdvt2w '' -1 Width Dependence of Dvt2w 142 Pdvt2w '' -1 Cross Dependence of Dvt2w 143 Ua '' -1 First Order Mobility Degradation Coeff., m/V 144 Lua '' -1 Length Dependence of Ua 145 Wua '' -1 Width Dependence of Ua 146 Pua '' -1 Cross Dependence of Ua 147 Ub '' -1 Second Order Mobility Degradation Coeff., (m/V)^2 148 Lub '' -1 Length Dependence of Ub 149 Wub '' -1 Width Dependence of Ub 150 Pub '' -1 Cross Dependence of Ub 151 Uc '' -1 Body-Bias Mobility Degradation Coeff., m/V^2 (1/V) 152 Luc '' -1 Length Dependence of Uc 153 Wuc '' -1 Width Dependence of Uc 154 Puc '' -1 Cross Dependence of Uc 155 Delta '' 9 Effective Vds parameter, V 156 Ldelta '' -1 Length Dependence of Delta 157 Wdelta '' -1 Width Dependence of Delta 158 Pdelta '' -1 Cross Dependence of Delta 159 Rdsw '' -1 Parasitic Resistance per Unit Width, Ohms*um 160 Lrdsw '' -1 Length Dependence of Rdsw 161 Wrdsw '' -1 Width Dependence of Rdsw 162 Prdsw '' -1 Cross Dependence of Rdsw 163 Prwg '' -1 Gate-Bias Effect on Parasitic Resistance, 1/V 164 Lprwg '' -1 Length Dependence of Prwg 165 Wprwg '' -1 Width Dependence of Prwg 166 Pprwg '' -1 Cross Dependence of Prwg 167 Prwb '' -1 Body Effect on Parasitic Resistance, 1/V^(1/2) 168 Lprwb '' -1 Length Dependence of Prwb 169 Wprwb '' -1 Width Dependence of Prwb 170 Pprwb '' -1 Cross Dependence of Prwb 171 Wr '' -1 Width Dependence of Rds 172 Lwr '' -1 Length Dependence of Wr 173 Wwr '' -1 Width Dependence of Wr 174 Pwr '' -1 Cross Dependence of Wr 175 Vsat '' -1 Saturation Velocity at Tnom, m/s 176 Lvsat '' -1 Length Dependence of Vsat 177 Wvsat '' -1 Width Dependence of Vsat 178 Pvsat '' -1 Cross Dependence of Vsat 179 A0 '' -1 Bulk Charge Effect Coeff. 180 La0 '' -1 Length Dependence of A0 181 Wa0 '' -1 Width Dependence of A0 182 Pa0 '' -1 Cross Dependence of A0 183 Keta '' -1 Body-Bias Coeff. of the Bulk Charge Effect, 1/V 184 Lketa '' -1 Length Dependence of Keta 185 Wketa '' -1 Width Dependence of Keta 186 Pketa '' -1 Cross Dependence of Keta 187 Ags '' -1 Gate Bias Coeff. of Abulk, 1/V 188 Lags '' -1 Length Dependence of Ags 189 Wags '' -1 Width Dependence of Ags 190 Pags '' -1 Cross Dependence of Ags 191 A1 '' -1 First Non-Saturation Factor, 1/V 192 La1 '' -1 Length Dependence of A1 193 Wa1 '' -1 Width Dependence of A1 194 Pa1 '' -1 Cross Dependence of A1 195 A2 '' -1 Second Non-Saturation Factor 196 La2 '' -1 Length Dependence of A2 197 Wa2 '' -1 Width Dependence of A2 198 Pa2 '' -1 Cross Dependence of A2 199 B0 '' 5 Bulk Charge Effect Coeff. for Channel Width, m 200 Lb0 '' -1 Length Dependence of B0 201 Wb0 '' -1 Width Dependence of B0 202 Pb0 '' -1 Cross Dependence of B0 203 B1 '' 5 Bulk Charge Effect Width Offset, m 204 Lb1 '' -1 Length Dependence of B1 205 Wb1 '' -1 Width Dependence of B1 206 Pb1 '' -1 Cross Dependence of B1 207 Alpha0 '' -1 First Parameter of Impact Ionization Current, m/V 208 Lalpha0 '' -1 Length Dependence of Alpha0 209 Walpha0 '' -1 Width Dependence of Alpha0 210 Palpha0 '' -1 Cross Dependence of Alpha0 211 Beta0 '' -1 First Parameter of Impact Ionization Current, m/V 212 Lbeta0 '' -1 Length Dependence of Beta0 213 Wbeta0 '' -1 Width Dependence of Beta0 214 Pbeta0 '' -1 Cross Dependence of Beta0 215 Voff '' 9 Offset Voltage in Subthreshold Region, V 216 Lvoff '' -1 Length Dependence of Voff 217 Wvoff '' -1 Width Dependence of Voff 218 Pvoff '' -1 Cross Dependence of Voff 219 Nfactor '' -1 Subthreshold Swing Factor 220 Lnfactor '' -1 Length Dependence of Nfactor 221 Wnfactor '' -1 Width Dependence of Nfactor 222 Pnfactor '' -1 Cross Dependence of Nfactor 223 Cdsc '' -1 Drain/Source and Channel Coupling Capacitance, F/m^2 224 Lcdsc '' -1 Length Dependence of Cdsc 225 Wcdsc '' -1 Width Dependence of Cdsc 226 Pcdsc '' -1 Cross Dependence of Cdsc 227 Cdscb '' -1 Body-Bias Dependence of Cdsc, F/(V*m^2) 228 Lcdscb '' -1 Length Dependence of Cdscb 229 Wcdscb '' -1 Width Dependence of Cdscb 230 Pcdscb '' -1 Cross Dependence of Cdscb 231 Cdscd '' -1 Drain-Bias Dependence of Cdsc, F/(V*m^2) 232 Lcdscd '' -1 Length Dependence of Cdscd 233 Wcdscd '' -1 Width Dependence of Cdscd 234 Pcdscd '' -1 Cross Dependence of Cdscd 235 Cit '' -1 Capacitance due to Interface Charge, F/m^2 236 Lcit '' -1 Length Dependence of Cit 237 Wcit '' -1 Width Dependence of Cit 238 Pcit '' -1 Cross Dependence of Cit 239 Eta0 '' -1 Subthreshold Region DIBL Coeff. 240 Leta0 '' -1 Length Dependence of Eta0 241 Weta0 '' -1 Width Dependence of Eta0 242 Peta0 '' -1 Cross Dependence of Eta0 243 Etab '' -1 Subthreshold Region DIBL Coeff. 244 Letab '' -1 Length Dependence of Etab 245 Wetab '' -1 Width Dependence of Etab 246 Petab '' -1 Cross Dependence of Etab 247 Dsub '' -1 DIBL Coeff. in Subthreshold Region 248 Ldsub '' -1 Length Dependence of Dsub 249 Wdsub '' -1 Width Dependence of Dsub 250 Pdsub '' -1 Cross Dependence of Dsub 251 Drout '' -1 DIBL Coeff. of Output Resistance 252 Ldrout '' -1 Length Dependence of Drout 253 Wdrout '' -1 Width Dependence of Drout 254 Pdrout '' -1 Cross Dependence of Drout 255 Pclm '' -1 Channel Length Modulation Coeff. 256 Lpclm '' -1 Length Dependence of Pclm 257 Wpclm '' -1 Width Dependence of Pclm 258 Ppclm '' -1 Cross Dependence of Pclm 259 Pdiblc1 '' -1 Drain Induced Barrier Lowering Effect Coeff. 1 260 Lpdiblc1 '' -1 Length Dependence of Pdiblc1 261 Wpdiblc1 '' -1 Width Dependence of Pdiblc1 262 Ppdiblc1 '' -1 Cross Dependence of Pdiblc1 263 Pdiblc2 '' -1 Drain Induced Barrier Lowering Effect Coeff. 2 264 Lpdiblc2 '' -1 Length Dependence of Pdiblc2 265 Wpdiblc2 '' -1 Width Dependence of Pdiblc2 266 Ppdiblc2 '' -1 Cross Dependence of Pdiblc2 267 Pdiblcb '' -1 Body-Effect on Drain Induced Barrier Lowering, 1/V 268 Lpdiblcb '' -1 Length Dependence of Pdiblcb 269 Wpdiblcb '' -1 Width Dependence of Pdiblcb 270 Ppdiblcb '' -1 Cross Dependence of Pdiblcb 271 Pscbe1 '' -1 Substrate Current Body-Effect Coeff. 1, V/m 272 Lpscbe1 '' -1 Length Dependence of Pscbe1 273 Wpscbe1 '' -1 Width Dependence of Pscbe1 274 Ppscbe1 '' -1 Cross Dependence of Pscbe1 275 Pscbe2 '' -1 Substrate Current Body-Effect Coeff. 2, m/V 276 Lpscbe2 '' -1 Length Dependence of Pscbe2 277 Wpscbe2 '' -1 Width Dependence of Pscbe2 278 Ppscbe2 '' -1 Cross Dependence of Pscbe2 279 Pvag '' -1 Gate voltage dependence of Rout 280 Lpvag '' -1 Length Dependence of Pvag 281 Wpvag '' -1 Width Dependence of Pvag 282 Ppvag '' -1 Cross Dependence of Pvag 283 Ute '' -1 Mobility Temperature Exponent 284 Lute '' -1 Length Dependence of Ute 285 Wute '' -1 Width Dependence of Ute 286 Pute '' -1 Cross Dependence of Ute 287 At '' -1 Temperature Coefficient of Vsat, m/s 288 Lat '' -1 Length Dependence of At 289 Wat '' -1 Width Dependence of At 290 Pat '' -1 Cross Dependence of At 291 Ua1 '' -1 Temperature Coefficient of Ua, m/V 292 Lua1 '' -1 Length Dependence of Ua1 293 Wua1 '' -1 Width Dependence of Ua1 294 Pua1 '' -1 Cross Dependence of Ua1 295 Ub1 '' -1 Temperature Coefficient of Ub, (m/V)^2 296 Lub1 '' -1 Length Dependence of Ub1 297 Wub1 '' -1 Width Dependence of Ub1 298 Pub1 '' -1 Cross Dependence of Ub1 299 Uc1 '' -1 Temperature Coefficient of Uc, 1/V 300 Luc1 '' -1 Length Dependence of Uc1 301 Wuc1 '' -1 Width Dependence of Uc1 302 Puc1 '' -1 Cross Dependence of Uc1 303 Kt1 '' 9 Temperature Coefficient of Vth, V 304 Lkt1 '' -1 Length Dependence of Kt1 305 Wkt1 '' -1 Width Dependence of Kt1 306 Pkt1 '' -1 Cross Dependence of Kt1 307 Kt1l '' -1 Channel Length Sensitivity of Kt1, V*m 308 Lkt1l '' -1 Length Dependence of Kt1l 309 Wkt1l '' -1 Width Dependence of Kt1l 310 Pkt1l '' -1 Cross Dependence of Kt1l 311 Kt2 '' -1 Body Coefficient of Kt1 312 Lkt2 '' -1 Length Dependence of Kt2 313 Wkt2 '' -1 Width Dependence of Kt2 314 Pkt2 '' -1 Cross Dependence of Kt2 315 Prt '' -1 Temperature Coefficient of Rdsw, Ohms*um 316 Lprt '' -1 Length Dependence of Prt 317 Wprt '' -1 Width Dependence of Prt 318 Pprt '' -1 Cross Dependence of Prt 319 Cgsl '' -1 Light Doped Source-Gate Overlap Capacitance, F/m 320 Lcgsl '' -1 Length Dependence of Cgsl 321 Wcgsl '' -1 Width Dependence of Cgsl 322 Pcgsl '' -1 Cross Dependence of Cgsl 323 Cgdl '' -1 Light Doped Drain-Gate Overlap Capacitance, F/m 324 Lcgdl '' -1 Length Dependence of Cgdl 325 Wcgdl '' -1 Width Dependence of Cgdl 326 Pcgdl '' -1 Cross Dependence of Cgdl 327 Ckappa '' -1 Coeff. for Light Doped Overlap Capacitance, F/m 328 Lckappa '' -1 Length Dependence of Ckappa 329 Wckappa '' -1 Width Dependence of Ckappa 330 Pckappa '' -1 Cross Dependence of Ckappa 331 Cf '' -1 Fringing Field Capacitance, F/m 332 Lcf '' -1 Length Dependence of Cf 333 Wcf '' -1 Width Dependence of Cf 334 Pcf '' -1 Cross Dependence of Cf 335 Clc '' 5 Constant Term for the Short Channel C-V Model, m 336 Lclc '' -1 Length Dependence of Clc 337 Wclc '' -1 Width Dependence of Clc 338 Pclc '' -1 Cross Dependence of Clc 339 Cle '' -1 Exponential Term for the Short Channel C-V Model 340 Lcle '' -1 Length Dependence of Cle 341 Wcle '' -1 Width Dependence of Cle 342 Pcle '' -1 Cross Dependence of Cle 343 Dlc '' 5 Length Offset Fitting Parameter from C-V Model, m 344 Dwc '' 5 Width Offset Fitting Parameter from C-V Model, m 345 Vfbcv '' 9 Flat Band Voltage Parameter for Capmod=0 only, V 346 Lvfbcv '' -1 Length Dependence of Vfbcv 347 Wvfbcv '' -1 Width Dependence of Vfbcv 348 Pvfbcv '' -1 Cross Dependence of Vfbcv 349 Kf '' -1 Flicker Noise Coefficient 350 Af '' -1 Flicker Noise Exponent 351 Ef '' -1 Flicker Noise Frequency Exponent 352 Em '' -1 Flicker Noise Parameter, V/m 353 Noia '' -1 Noise Parameter A 354 Noib '' -1 Noise Parameter B 355 Noic '' -1 Noise Parameter C 356 Imax '' 10 Explosion current, A 357 wVsubfwd '' 9 Substrate Junction Forward Bias (warning), V 358 wBvsub '' 9 Substrate Junction Reverse Breakdown Voltage (warning), V 359 wBvg '' 9 Gate Oxide Breakdown Voltage (warning), V 360 wBvds '' 9 Drain-Source Breakdown Voltage (warning), V 361 wIdsmax '' 10 Maximum Drain-Source Current (warning), A 362 wPmax '' 8 Maximum Power Dissipation (warning), W END_ELEMENT BudLinearization BudLinearization 2 1 SimInstanceName '' -1 Simulation component name 2 LinearizeComponent '' -1 Component to linearize (repeatable) END_ELEMENT C C 7 1 C 1.0pF 4 Capacitance 2 Temp '' 12 Temperature 3 Tnom '' 12 Nominal temperature 4 TC1 '' 12 Temperature coefficient; per degree Celsius 5 TC2 '' 12 Temperature coefficient; per degree Celsius squared 6 wBV '' 9 Breakdown voltage (warning) 7 InitCond '' -1 Initial condition for transient analysis END_ELEMENT CAPP2 CAPP2 6 1 C 1.0pF 4 Capacitance 2 TanD 0.001 -1 dielectric loss tangent 3 Q 50.0 -1 quality factor 4 FreqQ 300.0MHz 0 reference frequency for q 5 FreqRes 500.0MHz 0 resonance frequency 6 Exp 2.0 -1 exponent for frequency dependance of q END_ELEMENT CAPP2_Conn CAPP2_Conn 6 1 C 1.0pF 4 Capacitance 2 TanD 0.001 -1 dielectric loss tangent 3 Q 50.0 -1 quality factor 4 FreqQ 300.0MHz 0 reference frequency for q 5 FreqRes 500.0MHz 0 resonance frequency 6 Exp 2.0 -1 exponent for frequency dependance of q END_ELEMENT CAPP2_Pad1 CAPP2_Pad1 9 1 C 1.0pF 4 Capacitance 2 TanD 0.001 -1 dielectric loss tangent 3 Q 50.0 -1 quality factor 4 FreqQ 300.0MHz 0 reference frequency for q 5 FreqRes 500.0MHz 0 resonance frequency 6 Exp 2.0 -1 exponent for frequency dependance of q 7 W 25.0mils 5 W 8 S 10.0mils 5 S 9 L1 50.0mils 5 L END_ELEMENT CAPP2_Space CAPP2_Space 7 1 C 1.0pF 4 Capacitance 2 TanD 0.001 -1 dielectric loss tangent 3 Q 50.0 -1 quality factor 4 FreqQ 300.0MHz 0 reference frequency for q 5 FreqRes 500.0MHz 0 resonance frequency 6 Exp 2.0 -1 exponent for frequency dependance of q 7 L1 50.0mils 5 L END_ELEMENT CAPQ CAPQ 4 1 C 1.0pF 4 Capacitance 2 Q 50.0 -1 Quality factor 3 F 100.0MHz 0 Reference frequency for q 4 Mode loss_freq -1 Loss Mode for This Device END_ELEMENT CCCS CCCS 5 1 G 1 -1 Complex current gain, e.g. polar(10, 45), or P(j*omega)/Q(j*omega) 2 T 1.0nsec 6 Time delay 3 R1 0ohm 1 Input Resistance 4 R2 1e100ohm 1 Output Resistance 5 F 0.0GHz 0 Frequency at which G magnitude is down 3 dB END_ELEMENT CCCS_Z CCCS_Z 4 1 Gain 1 -1 Constant gain term 2 Num 1 -1 Numerator coefficients of transfer function 3 Den list(1,sqrt(2),1) -1 Denominator coefficients of transfer function 4 TimeStep timestep 6 Sampling time period END_ELEMENT CCVS CCVS 5 1 G 1ohm 1 Complex Transresistance, e.g. polar(10 Ohm, 45), or P(j*omega)/Q(j*omega) 2 T 1.0nsec 6 Time delay 3 R1 0ohm 1 Input Resistance 4 R2 0ohm 1 Output Resistance 5 F 0.0GHz 0 Frequency at which G magnitude is down 3 dB END_ELEMENT CCVS_Z CCVS_Z 4 1 Gain 1 -1 Constant gain term 2 Num 1 -1 Numerator coefficients of transfer function 3 Den list(1,sqrt(2),1) -1 Denominator coefficients of transfer function 4 TimeStep timestep 6 Sampling time period END_ELEMENT CDRange CDRange 1 1 Function list(our_cdr=cdrange(nf2,inpwr_lin,outpwr_lin,outpwr)) -1 cdrange(noise_fig,inpwr_lin,outpwr_lin,outpwr) END_ELEMENT CIND CIND 2 1 N 10.0 -1 Number of turns 2 AL 0.15nH 3 Inductance index END_ELEMENT CIND2 CIND2 5 1 N 10.0 -1 Number of turns 2 AL 0.15nH 3 Inductance index 3 R 2.5ohm 1 Total winding resistance 4 Q 50.0 -1 Core quality factor 5 Freq 125.0MHz 0 Frequency at which Q is specified END_ELEMENT CLIN CLIN 4 1 Ze 100.0ohm 1 Even Mode Characteristic Impedance 2 Zo 25.0ohm 1 Odd Mode Characteristic Impedance 3 E 90deg 7 Electrical Length 4 F 1GHz 0 Reference Frequency for Electrical Length END_ELEMENT CLINP CLINP 8 1 Ze 100.0ohm 1 Even Mode Characteristic Impedance 2 Zo 25.0ohm 1 Odd Mode Characteristic Impedance 3 L 500.0mils 5 Physical Length 4 Ke 2.05 -1 Even Mode Effective Dielectric Constant 5 Ko 2.15 -1 Odd Mode Effective Dielectric Constant 6 Ae 0.0001 -1 Even Mode Attenuation (dB / meter) 7 Ao 0.0001 -1 Odd Mode Attenuation (dB / meter) 8 Temp '' 12 Physical temperature END_ELEMENT COAX COAX 8 1 Di 36.0mils 5 Diameter of Inner Conductor 2 Do 131.0mils 5 Diameter of Outer Conductor 3 L 1000.0mils 5 Length 4 Er 2.1 -1 Dielectric Constant of Dielectric Between Inner and Outer Conductors 5 TanD 0.002 -1 Dielectric loss tangent 6 Rho 1 -1 Conductor Resistivity (Relative to Copper) 7 Sigma 0 -1 Dielectric conductivity 8 Temp '' 12 Physical temperature END_ELEMENT COMBINE2ML COMBINE2ML 3 1 Coupled[1] '' -1 1st component to be combined 2 Coupled[2] '' -1 2nd component to be combined 3 S 5mils 5 Spacing between Coupled[1] and Coupled[2] END_ELEMENT COMBINE3ML COMBINE3ML 5 1 Coupled[1] '' -1 1st component to be combined 2 Coupled[2] '' -1 2nd component to be combined 3 Coupled[3] '' -1 3rd component to be combined 4 S[1] 5mils 5 Spacing between Coupled[1] and Coupled[2] 5 S[2] 5mils 5 Spacing between Coupled[2] and Coupled[3] END_ELEMENT COMBINE4ML COMBINE4ML 7 1 Coupled[1] '' -1 1st component to be combined 2 Coupled[2] '' -1 2nd component to be combined 3 Coupled[3] '' -1 3rd component to be combined 4 Coupled[4] '' -1 4th component to be combined 5 S[1] 5mils 5 Spacing between Coupled[1] and Coupled[2] 6 S[2] 5mils 5 Spacing between Coupled[2] and Coupled[3] 7 S[3] 5mils 5 Spacing between Coupled[3] and Coupled[4] END_ELEMENT COMBINE5ML COMBINE5ML 9 1 Coupled[1] '' -1 1st component to be combined 2 Coupled[2] '' -1 2nd component to be combined 3 Coupled[3] '' -1 3rd component to be combined 4 Coupled[4] '' -1 4th component to be combined 5 Coupled[5] '' -1 5th component to be combined 6 S[1] 5mils 5 Spacing between Coupled[1] and Coupled[2] 7 S[2] 5mils 5 Spacing between Coupled[2] and Coupled[3] 8 S[3] 5mils 5 Spacing between Coupled[3] and Coupled[4] 9 S[4] 5mils 5 Spacing between Coupled[4] and Coupled[5] END_ELEMENT CPW CPW 5 1 Subst CPWSub1 -1 Substrate instance name 2 W 25.0mils 5 Center Conductor Width 3 G 5.0mils 5 Gap (Spacing) Between Center Conductor and Ground Planes 4 L 100.0mils 5 Center Conductor Length 5 Temp '' 12 Physical temperature END_ELEMENT CPWCGAP CPWCGAP 5 1 Subst CPWSub1 -1 Substrate instance name 2 W 25.0mils 5 Center Conductor Width 3 G 5.0mils 5 Gap (Spacing) Between Center Conductor and Ground Planes 4 S 5.2mils 5 Length of Gap Between Ends of Center Conductors 5 Temp '' 12 Physical temperature END_ELEMENT CPWCPL2 CPWCPL2 6 1 Subst CPWSub1 -1 Substrate instance name 2 W 25.0mils 5 Center Conductor Width 3 G 5.0mils 5 Gap (Spacing) Between Center Conductors and Ground Planes 4 S 10.0mils 5 Gap Between the Two Center Conductors 5 L 50.0mils 5 Center Conductor Length 6 Temp '' 12 Physical temperature END_ELEMENT CPWCPL4 CPWCPL4 8 1 Subst CPWSub1 -1 Substrate instance name 2 W 25.0mils 5 Width of Outer Center Conductors 3 G 5.0mils 5 Gap (Spacing) Between Center Conductors and Ground Planes 4 S 5.0mils 5 Gap Between Outer and Inner Center Conductors 5 Wi 5.0mils 5 Width of Inner Center Conductors 6 Si 5.0mils 5 Gap Between Inner Center Conductors 7 L 50.0mils 5 Center Conductor Length 8 Temp '' 12 Physical temperature END_ELEMENT CPWEF CPWEF 5 1 Subst CPWSub1 -1 Substrate instance name 2 W 25.0mils 5 Center Conductor Width 3 G 5.0mils 5 Gap (Spacing) Between Center Conductor and Ground Planes 4 L 100.0mils 5 Center Conductor Length 5 Temp '' 12 Physical temperature END_ELEMENT CPWEGAP CPWEGAP 6 1 Subst CPWSub1 -1 Substrate instance name 2 W 25.0mils 5 Center Conductor Width 3 G 5.0mils 5 Gap (Spacing) Between Center Conductor and Ground Planes 4 S 5.2mils 5 Gap Between End of Center Conductor and Ground Plane 5 L 100.0mils 5 Center Conductor Length 6 Temp '' 12 Physical temperature END_ELEMENT CPWG CPWG 5 1 Subst CPWSub1 -1 Substrate instance name 2 W 25.0mils 5 Center Conductor Width 3 G 5.0mils 5 Gap (Spacing) Between Center Conductor and Ground Planes 4 L 100.0mils 5 Center Conductor Length 5 Temp '' 12 Physical temperature END_ELEMENT CPWOC CPWOC 5 1 Subst CPWSub1 -1 Substrate instance name 2 W 25.0mils 5 Center Conductor Width 3 G 5.0mils 5 Gap (Spacing) Between Center Conductor and Ground Planes 4 L 100.0mils 5 Center Conductor Length 5 Temp '' 12 Physical temperature END_ELEMENT CPWSC CPWSC 5 1 Subst CPWSub1 -1 Substrate instance name 2 W 25.0mils 5 Center Conductor Width 3 G 5.0mils 5 Gap (Spacing) Between Center Conductor and Ground Planes 4 L 100.0mils 5 Center Conductor Length 5 Temp '' 12 Physical temperature END_ELEMENT CPWSUB CPWSUB 9 1 H 25.0mils 5 Substrate thickness 2 Er 10.0 -1 Relative dielectric constant 3 Mur 1 -1 Relative permeability 4 Cond 1.0E+306 -1 Conductor conductivity 5 Hu 1.0E3m 5 Cover height 6 T 0m 5 Conductor thickness 7 TanD 0 -1 Dielectric loss tangent 8 Rough 0m 5 Conductor surface roughness 9 Cond1 smt_cond -1 (for Layout option) Layer to which cond is mapped END_ELEMENT CQ_Conn CQ_Conn 4 1 C 1.0pF 4 Capacitance 2 Q 50.0 -1 Quality factor 3 F 100.0MHz 0 Reference frequency for q 4 Mode loss_freq -1 Loss Mode for This Device END_ELEMENT CQ_Pad1 CQ_Pad1 7 1 C 1.0pF 4 Capacitance 2 Q 50.0 -1 Quality factor 3 F 100.0MHz 0 Reference frequency for q 4 Mode loss_freq -1 Loss Mode for This Device 5 W 25.0mils 5 W 6 S 10.0mils 5 S 7 L1 50.0mils 5 L END_ELEMENT CQ_Space CQ_Space 5 1 C 1.0pF 4 Capacitance 2 Q 50.0 -1 Quality factor 3 F 100.0MHz 0 Reference frequency for q 4 Mode loss_freq -1 Loss Mode for This Device 5 L1 50.0mils 5 L END_ELEMENT C_Conn C_Conn 1 1 C 1.0pF 4 Capacitance END_ELEMENT C_Model C_Model 11 1 C 1pF 4 Capacitance 2 Cj '' 4 Capacitance per area 3 Cjsw '' 4 Capacitance per periphery 4 Length '' 5 Length 5 Width '' 5 Width 6 Narrow '' 5 Length and width narrowing due to etching 7 Tnom '' 12 Nominal temperature 8 TC1 '' 12 Temperature coefficient; per degree Celsius 9 TC2 '' 12 Temperature coefficient; per degree Celsius squared 10 wBV '' 9 Breakdown voltage (warning) 11 AllParams '' -1 Data Access Component (DAC) Based Parameters END_ELEMENT C_Pad1 C_Pad1 4 1 C 1.0pF 4 Capacitance 2 W 25.0mils 5 W 3 S 10.0mils 5 S 4 L1 50.0mils 5 L END_ELEMENT C_Space C_Space 2 1 C 1.0pF 4 Capacitance 2 L1 50.0mils 5 L END_ELEMENT CarrToIM CarrToIM 1 1 Function list(our_ctm=carr_to_im(vout,{1,0},{2,-1})) -1 carr_to_im(vout,fund_freq,IM_freq) END_ELEMENT Chain Chain 12 1 A '' -1 Reverse voltage gain. 2 B '' 1 Reverse transresistance, Ohms 3 C '' 2 Reverse transconductance, Siemens 4 D '' -1 Reverse current gain 5 ImpNoncausalLength '' -1 Non-causal function impulse response order 6 ImpMode '' -1 Convolution mode 7 ImpMaxFreq '' 0 Maximum Frequency to which device is evaluated 8 ImpDeltaFreq '' 0 Sample spacing in frequency 9 ImpMaxOrder '' -1 Maximum allowed impulse response order 10 ImpWindow '' -1 Smoothing window 11 ImpRelTol '' -1 Relative impulse response truncation factor 12 ImpAbsTol '' -1 Absolute impulse response truncation factor END_ELEMENT Circulator Circulator 15 1 F1 '' 0 first frequency break point 2 F2 '' 0 second frequency break point 3 F3 '' 0 third frequency break point 4 Loss1 0.dB 13 attenuation in dB for frequencies <=F1 5 Loss2 0.dB 13 attenuation in dB for F1frequency<=F3 7 Loss4 0.dB 13 attenuation in dB for frequencies >F3 8 VSWR1 1. -1 VSWR at both ports for frequencies <=F1 9 VSWR2 1. -1 VSWR at both ports for F1frequency<=F3 11 VSWR4 1. -1 VSWR at both ports for frequencies >F3 12 Isolat 100.dB 13 isolation in dB 13 Z1 '' 1 reference impedance for port1 14 Z2 '' 1 reference impedance for port2 15 Z3 '' 1 reference impedance for port3 END_ELEMENT ClockLFSR ClockLFSR 5 1 Vlow 0.25V 9 Lower Threshold Voltage 2 Vhigh 0.75V 9 Upper Threshold Voltage 3 Taps bin("10000100") -1 Bits Used to Generate Feedback 4 Seed bin("10101010") -1 Initial Value Loaded into Shift Register 5 Rout 1ohm 1 Output Resistance END_ELEMENT CoaxTee CoaxTee 3 1 Z 50ohm 1 Characteristic Impedance of Coaxial Line 2 L 10mils 5 Length of All Branches of the T-Junction 3 K 2.1 -1 Effective Dielectric Constant END_ELEMENT Comparator Comparator 2 1 Vlow 0.25V 9 Lower Threshold Voltage 2 Vhigh 0.75V 9 Upper Threshold Voltage END_ELEMENT Counter Counter 2 1 Direction 1 -1 Direction One 2 Thresh 0V 9 Thresh One END_ELEMENT CouplerDual CouplerDual 21 1 Coupling 10.dB 13 coupling factor in dB 2 F1 '' 0 first frequency break point 3 F2 '' 0 second frequency break point 4 F3 '' 0 third frequency break point 5 MVSWR1 1. -1 mainline VSWR for frequencies <=F1 6 MVSWR2 1. -1 mainline VSWR for F1frequency<=F3 8 MVSWR4 1. -1 mainline VSWR for frequencies >F3 9 CVSWR1 1. -1 coupled arm VSWR for frequencies <=F1 10 CVSWR2 1. -1 coupled arm VSWR for F1frequency<=F3 12 CVSWR4 1. -1 coupled arm VSWR for frequencies >F3 13 Loss1 0.dB 13 attenuation in dB for frequencies <=F1 14 Loss2 0.dB 13 attenuation in dB for F1frequency<=F3 16 Loss4 0.dB 13 attenuation in dB for frequencies >F3 17 Direct1 0.dB 13 directivity in dB for frequencies <=F1 18 Direct2 0.dB 13 directivity in dB for F1frequency<=F3 20 Direct4 0.dB 13 directivity in dB for frequencies >F3 21 ZRef 50.ohm 1 reference impedance for all ports END_ELEMENT CouplerSingle CouplerSingle 21 1 Coupling 10.dB 13 coupling factor in dB 2 F1 '' 0 first frequency break point 3 F2 '' 0 second frequency break point 4 F3 '' 0 third frequency break point 5 MVSWR1 1. -1 mainline VSWR for frequencies <=F1 6 MVSWR2 1. -1 mainline VSWR for F1frequency<=F3 8 MVSWR4 1. -1 mainline VSWR for frequencies >F3 9 CVSWR1 1. -1 coupled arm VSWR for frequencies <=F1 10 CVSWR2 1. -1 coupled arm VSWR for F1frequency<=F3 12 CVSWR4 1. -1 coupled arm VSWR for frequencies >F3 13 Loss1 0.dB 13 attenuation in dB for frequencies <=F1 14 Loss2 0.dB 13 attenuation in dB for F1frequency<=F3 16 Loss4 0.dB 13 attenuation in dB for frequencies >F3 17 Direct1 0.dB 13 directivity in dB for frequencies <=F1 18 Direct2 0.dB 13 directivity in dB for F1frequency<=F3 20 Direct4 0.dB 13 directivity in dB for frequencies >F3 21 ZRef 50.ohm 1 reference impedance for all ports END_ELEMENT Curtice2_Model Curtice2_Model 53 1 NFET y_n1 -1 Model Type - YES or NO 2 PFET y_n0 -1 Model Type - YES or NO 3 Idsmod 1 -1 1=CQ 2=CC 3=Statz 4=Materka 5=Tajima 6=symbolic 7=TOM 8=Modified Materka 4 Vto '' 9 Threshold voltage, V 5 Beta '' -1 Transconductance parameter, A/V^2 6 Lambda '' -1 Channel length modulation parameter, 1/V 7 Alpha '' -1 Hyperbolic tangent function parameter, 1/V 8 Tau '' 6 Transit time under gate, S 9 Tnom '' 12 Nominal ambient temperature, Celsius 10 Idstc '' -1 Ids temperature coefficient 11 Vtotc '' -1 VTO Temperature Coefficient, V/Degree C 12 Betatce '' -1 BETA Exponential Temperature Coefficient, %/Degree C 13 Rin '' 1 G-S resistance, Ohm 14 Rf '' 1 G-S effective forward-bias resistance (0. means infinity), Ohm 15 Gscap '' -1 0=none 1=linear 2=junction 3=Statz Charge 5=Statz Cap 16 Cgs '' 4 Zero-bias G-S junction cap., F 17 Cgd '' 4 Zero-bias G-D junction cap., F 18 Gdcap '' -1 0=none 1=linear 2=junction 3=Statz Charge 5=Statz Cap 19 Fc '' -1 Coefficient for forward-bias depletion cap. 20 Rd '' 1 Drain ohmic resistance, Ohm 21 Rg '' 1 Gate resistance, Ohm 22 Rs '' 1 Source ohmic resistance, Ohm 23 Ld '' 3 Drain inductance, H 24 Lg '' 3 Gate inductance, H 25 Ls '' 3 Source inductance, H 26 Cds '' 4 Drain-source cap., F 27 Rc '' 1 Used with CRF to model freq. dependent output conductance (0. means infinity), Ohm 28 Crf '' 4 Used with RC to model freq. dependent output conductance, F 29 Gsfwd '' -1 0=none 1=linear 2=diode 30 Gsrev '' -1 0=none 1=linear 2=diode 31 Gdfwd '' -1 0=none 1=linear 2=diode 32 Gdrev '' -1 0=none 1=linear 2=diode 33 R1 '' 1 Approximate breakdown resistance (0. Means Infinity), Ohm 34 R2 '' 1 Resistance relating breakdown voltage to channel, Ohm 35 Vbi '' 9 Built-in gate potential, V 36 Vbr '' 9 Gate junction reverse bias breakdown voltage (0. Means Infinity), V 37 Is '' 10 Gate junction saturation current, A 38 Ir '' 10 Gate rev saturation current, A 39 Imax '' 10 Explosion current, A 40 Xti '' -1 Saturation Current Temperature Exponent 41 Eg '' -1 Energy Gap for Temperature Effect on IS 42 N '' -1 Gate junction emission coefficient 43 Fnc '' 0 Flicker noise corner frequency 44 R '' -1 Gate noise coefficient 45 P '' -1 Drain noise coefficient 46 C '' -1 Gate-drain noise correlation coefficient. 47 Taumdl y_n0 -1 Use 2nd order Bessel polynomial to model tau effect in transient 48 wVgfwd '' 9 Gate junction forward bias (warning), V 49 wBvgs '' 9 Gate-source reverse breakdown voltage (warning), V 50 wBvgd '' 9 Gate-drain reverse breakdown voltage (warning), V 51 wBvds '' 9 Drain-source breakdown voltage (warning), V 52 wIdsmax '' 10 Maximum drain-source current (warning), A 53 wPmax '' 8 Maximum power dissipation (warning), W END_ELEMENT Curtice3_Model Curtice3_Model 59 1 NFET y_n1 -1 Model Type - YES or NO 2 PFET y_n0 -1 Model Type - YES or NO 3 Idsmod 2 -1 1=CQ 2=CC 3=Statz 4=Materka 5=Tajima 6=symbolic 7=TOM 8=Modified Materka 4 Vto '' 9 Value of V1 below which Ids = Ids(V1=VTO,Vds), V 5 Beta '' -2 Coefficient for pinch-off change with respect to VDS, 1/V 6 Rds0 '' 1 DC conductance at Vgs=0 7 Vout0 '' 9 Output voltage at which A0, A1, A2, A3 were evaluated, V 8 Vdsdc '' 9 Vds at `rds0 meaured bias 9 Tau '' 6 Transit time under gate, S 10 Gamma '' -1 Current saturation parameter, 1/V 11 Tnom '' 12 Nominal ambient temperature, Celsius 12 Idstc '' -1 Ids temperature coefficient 13 A0 '' -1 Cubic polynomial IDS Equation Coefficient, A 14 A1 '' -1 Cubic polynomial IDS Equation Coefficient, A/V 15 A2 '' -1 Cubic polynomial IDS Equation Coefficient, A/V^2 16 A3 '' -1 Cubic polynomial IDS Equation Coefficient, A/V^3 17 Vtotc '' -1 VTO Temperature Coefficient, V/Degree C 18 Betatce '' -1 BETA Exponential Temperature Coefficient, %/Degree C 19 Rin '' 1 Channel resistance, Ohm 20 Rf '' 1 G-S effective forward-bias resistance (0. means infinity), Ohm 21 Fc '' -1 Coefficient for forward-bias depletion cap. 22 Gscap '' -1 0=none 1=linear 2=junction 3=Statz Charge 5=Statz Cap 23 Cgs '' 4 Zero-bias G-S junction cap., F 24 Cgd '' 4 Zero-bias G-D junction cap., F 25 Gdcap '' -1 0=none 1=linear 2=junction 3=Statz Charge 5=Statz Cap 26 Rd '' 1 Drain ohmic resistance, Ohm 27 Rg '' 1 Gate resistance, Ohm 28 Rs '' 1 Source ohmic resistance, Ohm 29 Ld '' 3 Drain inductance, H 30 Lg '' 3 Gate inductance, H 31 Ls '' 3 Source inductance, H 32 Cds '' 4 Drain-source cap., F 33 Crf '' 4 Used with RDS to model freq. dependent output conductance, F 34 Rds '' 1 Additional output resistance for RF operation (0. means infinity), Ohm 35 Gsfwd '' -1 0=none 1=linear 2=diode 36 Gsrev '' -1 0=none 1=linear 2=diode 37 Gdfwd '' -1 0=none 1=linear 2=diode 38 Gdrev '' -1 0=none 1=linear 2=diode 39 R1 '' 1 Approximate breakdown resistance (0. means infinity), Ohm 40 R2 '' 1 Resistance relating breakdown voltage to channel currents, Ohm 41 Vbi '' 9 Built-in gate potential, V 42 Vbr '' 9 Gate junction reverse bias breakdown voltage (0. Means Infinity), V 43 Is '' 10 Gate junction saturation current, A 44 Ir '' 10 Gate rev saturation current, A 45 Xti '' -1 Saturation Current Temperature Exponent 46 Eg '' -1 Energy Gap for Temperature Effect on IS 47 N '' -1 Gate Junction emission coefficient 48 Imax '' 10 Explosion current, A 49 Taumdl y_n0 -1 Use 2nd order Bessel polynomial to model tau effect in transient 50 Fnc '' 0 Flicker noise corner frequency 51 R '' -1 Gate noise coefficient 52 P '' -1 Drain noise coefficient 53 C '' -1 Gate-drain noise correlation coefficient. 54 wVgfwd '' 9 Gate junction forward bias (warning), V 55 wBvgs '' 9 Gate-source reverse breakdown voltage (warning), V 56 wBvgd '' 9 Gate-drain reverse breakdown voltage (warning), V 57 wBvds '' 9 Drain-source breakdown voltage (warning), V 58 wIdsmax '' 10 Maximum drain-source current (warning), A 59 wPmax '' 8 Maximum power dissipation (warning), W END_ELEMENT DC DC 32 1 SweepVar '' -2 Name of variable or parameter to be swept 2 UseSweepPlan '' -1 Flag to indicate use of SweepPlan 3 SweepPlan '' -1 SweepPlan instance path name for sweep values 4 Start 1 -1 Start value 5 Stop 10 -1 Stop value 6 Step 1 -1 Step value 7 Center '' -1 Center value 8 Span '' -1 Span 9 Lin '' -1 Linear sweep 10 Dec '' -1 Number of points per decade 11 Log '' -1 Log sweep 12 Reverse '' -1 Reverse sweep 13 Pt '' -1 Single point value 14 Sort 'LINEAR START STEP' -1 Sort values 15 MaxDeltaV 0.0V 9 Max change in node voltage allowed per iteration 16 MaxIters 250 -1 Max number of iterations 17 ConvMode 0 -1 Convergence algorithm selection 18 NestLevel 2 -1 Levels of subcircuits to output 19 StatusLevel 2 -1 Degree of annotation 20 DevOpPtLevel DeviceOpNone -1 Levels of DC Operating Point Data to output 21 UseFiniteDiff no -1 Use finite differences for sensitivities 22 ArcMaxStep 0.0 -1 Maximum arc-length step 23 ArcLevelMaxStep 0.0 -1 Maximum arc-length step for source-level continuation 24 ArcMinValue '' -1 Minimum value for parameter during arclength continuation 25 ArcMaxValue '' -1 Maximum value for parameter during arclength continuation 26 MaxStepRatio 100 -1 Ratio of maximum to given number of steps 27 MaxShrinkage 1e-5 -1 Maximum step shrinkage 28 LimitingMode 0 -1 Select limiting mode 29 OutputAllSolns '' -1 Output solution at all internal steps when sweeping 30 PrintOpPoint no -1 Print operating point 31 Restart 1 -1 Do not use previous solution as initial guess 32 Other '' -1 Output string to netlist END_ELEMENT DC_Block DC_Block 5 1 Mode 1 -1 Mode: 0 => short, >0 => DC block, <0 => DC feed 2 C '' 4 DC block capacitance (transient only) 3 L '' 3 DC feed inductance(transient only) 4 Gain '' -1 Current gain 5 wImax '' 10 Maximum current (warning) END_ELEMENT DC_Feed DC_Feed 5 1 Mode -1 -1 Mode: 0 => short, >0 => DC block, <0 => DC feed 2 C '' 4 DC block capacitance (transient only) 3 L '' 3 DC feed inductance(transient only) 4 Gain '' -1 Current gain 5 wImax '' 10 Maximum current (warning) END_ELEMENT DCtoRF DCtoRF 1 1 Function list(our_dcrf=dc_to_rf(vout,0,vdc,0,I_Probe1.i,I_Probe2.i,{1})) -1 dc_to_rf(vPlusRF,vMinusRF,vPlusDC,vMinusDC,currentRF,currentDC,rfFreq) END_ELEMENT DFET DFET 30 1 Gm1 20.0uS 2 DC transconductance at Gate 1 2 T1 1.0nsec 6 Time delay of Gm1 3 F1 1.0GHz 0 -3dB frequency for Gm1 4 Cgs1 10.0pF 4 Gate 1 to source capacitance 5 Ri1 0.1ohm 1 Input resistance of gate 1 6 Cdg1 10.0pF 4 Drain to gate 1 capacitance 7 Cds1 10.0pF 4 Drain to source capacitance-gate 1 8 Rds1 500.0ohm 1 Drain to source resistance-gate 1 9 Rg1 0.1ohm 1 Gate 1 resistance 10 Lg1 10.0nH 3 Gate 1 inductance 11 Gm2 20.0uS 2 DC transconductance at Gate 2 12 T2 1.0nsec 6 Time delay of Gm2 13 F2 1.0GHz 0 -3dB frequency for Gm2 14 Cgs2 10.0pF 4 Gate 2 to source capacitance 15 Ri2 0.1ohm 1 Input resistance of gate 2 16 Cdg2 10.0pF 4 Drain to gate 2 capacitance 17 Cds2 10.0pF 4 Drain to source capacitance-gate 2 18 Rds2 500.0ohm 1 Drain to source resistance-gate 2 19 Rg2 0.1ohm 1 Gate 2 resistance 20 Lg2 10.0nH 3 Gate 2 inductance 21 Rd 25.0uohm 1 Drain resistance 22 Ld 1.0nH 3 Drain inductance 23 Rs 1.0ohm 1 Source resistance 24 Ls 10.0nH 3 Source inductance 25 Cg1s 10.0pF 4 Gate 1 to source capacitance 26 Cg12 5.0pF 4 Gate 1 to gate 2 capacitance 27 Cg1d 10.0pF 4 Gate 1 to drain capacitance 28 Cg2d 1.0pF 4 Gate 2 to drain capacitance-gate 2 29 Cds 1.0pF 4 Drain to source capacitance 30 R12 1.0ohm 1 Resistance between drain 1 and source 2 END_ELEMENT DICAP DICAP 6 1 W 25.0mils 5 Width of metal plates and dielectric 2 L 25.0mils 5 Length of metal plates and dielectric 3 T 4.0mils 5 Thickness of dielectric 4 Er 2.50 -1 Dielectric constant 5 TanDeL 0.001 -1 Dielectric loss tagent value at 1 MHz 6 R0 0.01ohm 1 Series resistance at 1 GHz END_ELEMENT DILABMLC DILABMLC 6 1 C0 1.0pF 4 Nominal Capacitance 2 TanDeL 0.001 -1 Dielectric loss tagent value at 1 MHz 3 R0 0.01ohm 1 Bulk resistivity of termination at 1 MHz 4 Rt 0.01ohm 1 Termination loss resistance at 1 MHz 5 Re 0.01ohm 1 Electrode loss resistance at 1 GHz 6 Mount 1.0 -1 Mounting orientation: flat or edge END_ELEMENT DPDT_Static DPDT_Static 14 1 State 1 -1 =0 (nodes 1 and 2, 4 and 5 connected), =1 (node 1 and 3, 4 and 6 connected) 2 F1 '' 0 first frequency break point 3 F2 '' 0 second frequency break point 4 F3 '' 0 third frequency break point 5 Loss1 0.dB 13 attenuation in dB for frequencies <=F1 6 Loss2 0.dB 13 attenuation in dB for F1frequency<=F3 8 Loss4 0.dB 13 attenuation in dB for frequencies >F3 9 VSWR1 1. -1 VSWR at both ports for frequencies <=F1 10 VSWR2 1. -1 VSWR at both ports for F1frequency<=F3 12 VSWR4 1. -1 VSWR at both ports for frequencies >F3 13 Isolat 100.dB 13 isolation in dB 14 ZRef 50.ohm 1 reference impedance for all ports END_ELEMENT Deembed1 Deembed1 5 1 File '' -1 File Name 2 Type Type1 -1 File Type 3 InterpMode Mode0 -1 Interpolation Mode 4 InterpDom ID0 -1 Interpolation Domain 5 Temp '' 12 Temperature END_ELEMENT Deembed2 Deembed2 5 1 File '' -1 File Name 2 Type Type1 -1 File Type 3 InterpMode Mode0 -1 Interpolation Mode 4 InterpDom ID0 -1 Interpolation Domain 5 Temp '' 12 Temperature END_ELEMENT DevLinPhase DevLinPhase 1 1 Function list(our_dlp=dev_lin_phase(volt_gain(S21,PortZ1,PortZ2))) -1 dev_lin_phase( complex_gain_vector ) END_ELEMENT Differentiator Differentiator 2 1 Gain 1. -1 differentiator slope 2 Rref 50.ohm 1 reference resistance for both ports END_ELEMENT Diode Diode 5 1 Model DIODEM1 -1 Model instance name 2 Area '' -1 Scaling Factor 3 Region '' -1 DC operating region, 0=off, 1=on 4 Temp '' 12 Device operating temperature 5 Mode simtype_nonlin -1 Simulation Mode for This Device END_ELEMENT Diode_Model Diode_Model 25 1 Is '' 10 Saturation Current, A 2 Rs '' 1 Ohmic Resistance, Ohm 3 N '' -1 Emission Coefficient 4 Tt '' 6 Transit Time, S 5 Cjo '' 4 Zero-bias Junction Cap., F 6 Vj '' 9 Junction Potential, V 7 M '' -1 Grading Coefficient 8 Eg '' -1 Energy Gap, eV 9 Imax '' 10 Explosion current, A 10 Xti '' -1 Saturation-current Temperature Exponent 11 Kf '' -1 Flicker Noise Coefficient 12 Af '' -1 Flicker Noise Exponent 13 Fc '' -1 Forward-bias Depletion Cap. Coefficient 14 Bv '' 9 Reverse Breakdown Voltage (0. Means Infinity), V 15 Ibv '' 10 Current At Reverse Breakdown Voltage, A 16 Isr '' 10 Recombination Current Parameter, A 17 Nr '' -1 Emission Coefficient For ISR 18 Ikf '' 10 High-Injection Knee Current (0. Means Infinity), A 19 Nbv '' -1 Reverse Breakdown Ideality Factor 20 Ibvl '' 10 Low-Level Reverse Breakdown Knee Current, A 21 Nbvl '' -1 Low-Level Reverse Breakdown Ideality Factor 22 Tnom '' 12 Nominal ambient temperature, Celsius 23 Ffe '' -1 Flicker noise frequency exponent 24 wBv '' 9 Diode reverse breakdown voltage (warning), V 25 wPmax '' 8 Maximum Power Dissipation (warning), W END_ELEMENT DivideByN DivideByN 2 1 FnomIn 1.0KHz 0 Nominal Input Frequency 2 N 11 -1 Divide Number END_ELEMENT EE_BJT2_Model EE_BJT2_Model 41 1 Type One -1 Model Type - 1 or 2 2 Nf '' -1 Forward Current Emission Coefficient 3 Ne '' -1 B-E Leakage Emission Coefficient 4 Nbf '' -1 EEBJT2 reverse base ideality factor 5 Vaf '' 9 Forward Early Voltage (0. Means Infinity), V 6 Ise '' 10 B-E Leakage Saturation Current, A 7 Tf '' 6 Ideal Forward Transit Time, S 8 Ikf '' 10 Corner for Forward Beta High Current Roll-off (0. Means Infinity), A 9 Xtf '' -1 Coefficient of Bias Dependence for TF 10 Vtf '' 9 Voltage Dependence of TF on B-C Voltage (0. Means Infinity), V 11 Itf '' 10 Parameter for High Current Effect on TF, A 12 Nbr '' 10 EEBJT2 reverse base ideality factor 13 Nr '' -1 Reverse Current Emission Coefficient 14 Nc '' -1 B-C Leakage Emission Coefficient 15 Isc '' 10 B-C Leakage Saturation Current, A 16 Ikr '' 10 Corner for Reverse Beta High Current Roll-off (0. Means Infinity), A 17 Var '' 9 Reverse Early Voltage (0. Means Infinity), V 18 Tr '' 6 Ideal Reverse Transit Time, S 19 Isf '' 10 Forward saturation current for EEBJT2, A 20 Ibif '' 10 Fwd base saturation current for EEBJT2, A 21 Isr '' 10 Reverse saturation current for EEBJT2, A 22 Ibir '' 10 Rev base saturation current for EEBJT2, A 23 Tamb '' 12 EEBJT2 extraction temperature, Celsius 24 Cje '' 4 B-E Zero-bias Depletion Cap., F 25 Vje '' 9 B-E Junction Built-in Potential, V 26 Mje '' -1 B-E Junction Exponential Factor 27 Cjc '' 4 B-C Zero-bias Depletion Cap., F 28 Vjc '' 9 B-C Junction Built-in Potential, V 29 Mjc '' -1 B-C Junction Exponential Factor 30 Rb '' 1 Zero-bias Base Resistance, Ohm 31 Re '' 1 Emitter Resistance, Ohm 32 Rc '' 1 Collector Resistance, Ohm 33 Fc '' -1 Forward-bias Depletion Cap. Coefficient 34 wVsubfwd '' 9 Substrate Junction Forward Bias (warning), V 35 wBvsub '' 9 Substrate Junction Reverse Breakdown Voltage (warning), V 36 wBvbe '' 9 Base-Emitter Reverse Breakdown Voltage (warning), V 37 wBvbc '' 9 Base-Collector Reverse Breakdown Voltage (warning), V 38 wVbcfwd '' 9 Base-Collector Forward Bias (warning), V 39 wIbmax '' 10 Maximum Base Current (warning), A 40 wIcmax '' 10 Maximum Collector Current (warning), A 41 wPmax '' 8 Maximum Power Dissipation (warning), W END_ELEMENT EE_FET3 EE_FET3 3 1 Model EEFET3M1 -1 Model instance name 2 Ugw '' 5 Unit gate width of device 3 N '' -1 Number of Gate fingers END_ELEMENT EE_FET3_Model EE_FET3_Model 61 1 Vto '' 9 Zero-bias threshold parameter 2 Gamma '' -1 Transconductance parameter, 1/V 3 Vgo '' 9 Gate-source voltage where transconductance is a maximum, V 4 Vdelt '' 9 Parameter which controls linearization point, V 5 Vch '' 9 Gate-source voltage where Gamma no longer effects I-V,V 6 Gmmax '' 3 Peak transconductance parameter, S 7 Vdso '' 9 Drain voltage where Vo dependence is nominal, V 8 Vsat '' 9 Drain-source current saturation parameter, V 9 Kapa '' 2 Output conductance parameter, S 10 Peff '' -1 Channel to backside self-heating parameter, W 11 Vtso '' 9 Subthreshold onset voltage, V 12 Is '' 10 Gate junction reverse saturation current, A 13 N '' -1 Junction ideality factor, demensionless 14 Ris '' 1 Source end channel resistance, Ohms 15 Rid '' 1 Drain end channel resistance, Ohms 16 Tau '' 6 Gate transit time delay, T 17 Cdso '' 4 Drain source inter-electrode capacitance, F 18 Rdb '' 1 Dispersion source output impedence, Ohms 19 Cbs '' 4 Trapping-state capacitance, C 20 Vtoac '' 9 Zero-bias threshold parameter, V 21 Gammaac '' -1 Transconductance parameter (AC), 1/V 22 Vdeltac '' 9 Parameter which controls linearization point (AC), V 23 Gmmaxac '' -1 Peak transconductance parameter (AC), S 24 Kapaac '' 2 Output conductance parameter (AC), S 25 Peffac '' -1 Channel to backside self-heating parameter (AC), W 26 Vtsoac '' 9 Subthreshold onset voltage(AC), V 27 Gdbm '' 4 Additional d-b branch conductance at Vds = VDSM, 28 Kdb '' -1 Dependence of d-b branch conductance with Vds 29 Vdsm '' 9 Voltage where D-B branch conductance becomes constant 30 C11o '' 4 Maximum input capacitance for VDS=VDSO>DELTDS, F 31 C11th '' 4 Minimum (threshold) input capacitance for Vds=VDSO, F 32 Vinfl '' 9 Inflection point in C11-Vgs characteristic, V 33 Deltgs '' 9 C11TH to C11O transition voltage, V 34 Deltds '' 9 Linear to saturation region transition parameter, V 35 Lambda '' -1 C11-Vds characteristic slope parameter, 1/V 36 C12sat '' 4 Input transcapacitance for Vgs=VINFL and Vds>DELTDS, F 37 Cgdsat '' 4 Gate drain capacitance for Vds>DELTDS, F 38 Kbk '' -1 Breakdown current coefficient at threshold 39 Vbr '' 9 Breakdown onset voltage, V 40 Nbr '' -1 Breakdown current exponent parameter 41 Idsoc '' 10 Open channel (maximum) value of Ids, A 42 Rd '' 1 Drain contact resistance, Ohms 43 Rs '' 1 Source contact resistance, Ohms 44 Rg '' 1 Gate metalization resistance, Ohms 45 Ugw '' 5 Unit gate width of device 46 Ngf '' -1 Number of device gate fingers 47 Vco '' 9 Voltage where transconductance compression begins, V 48 Vba '' 9 Transconductance compression tail-off parameter, V 49 Vbc '' 9 Transconductance roll-off to tail-off voltage, V 50 Mu '' -1 Vo dependent transconductance compression parameter 51 Deltgm '' -1 Slope of transconductance compression characteristic 52 Deltgmac '' -1 Slope of transconductance compression characteristic (AC) 53 Alpha '' 9 Transconductance saturation to compression transition, V 54 Kmod '' -1 Library model numbe 55 Kver '' -1 Version number 56 wVgfwd '' 9 Gate junction forward bias (warning), V 57 wBvgs '' 9 Gate-source reverse breakdown voltage (warning), V 58 wBvgd '' 9 Gate-drain reverse breakdown voltage (warning), V 59 wBvds '' 9 Drain-source breakdown voltage (warning), V 60 wIdsmax '' 10 Maximum drain-source current (warning), A 61 wPmax '' 8 Maximum power dissipation (warning), W END_ELEMENT EE_HEMT1 EE_HEMT1 3 1 Model EEHEMTM1 -1 Model instance name 2 Ugw '' 5 Unit gate width of device 3 N '' -1 Number of Gate fingers END_ELEMENT EE_HEMT1_Model EE_HEMT1_Model 61 1 Vto '' 9 Zero-bias threshold parameter 2 Gamma '' -1 Transconductance parameter, 1/V 3 Vgo '' 9 Gate-source voltage where transconductance is a maximum, V 4 Vdelt '' 9 Parameter which controls linearization point, V 5 Vch '' 9 Gate-source voltage where Gamma no longer effects I-V,V 6 Gmmax '' 3 Peak transconductance parameter, S 7 Vdso '' 9 Drain voltage where Vo dependence is nominal, V 8 Vsat '' 9 Drain-source current saturation parameter, V 9 Kapa '' 2 Output conductance parameter, S 10 Peff '' -1 Channel to backside self-heating parameter, W 11 Vtso '' 9 Subthreshold onset voltage, V 12 Is '' 10 Gate junction reverse saturation current, A 13 N '' -1 Junction ideality factor, demensionless 14 Ris '' 1 Source end channel resistance, Ohms 15 Rid '' 1 Drain end channel resistance, Ohms 16 Tau '' 6 Gate transit time delay, T 17 Cdso '' 4 Drain source inter-electrode capacitance, F 18 Rdb '' 1 Dispersion source output impedence, Ohms 19 Cbs '' 4 Trapping-state capacitance, C 20 Vtoac '' 9 Zero-bias threshold parameter, V 21 Gammaac '' -1 Transconductance parameter (AC), 1/V 22 Vdeltac '' 9 Parameter which controls linearization point (AC), V 23 Gmmaxac '' -1 Peak transconductance parameter (AC), S 24 Kapaac '' 2 Output conductance parameter (AC), S 25 Peffac '' -1 Channel to backside self-heating parameter (AC), W 26 Vtsoac '' 9 Subthreshold onset voltage(AC), V 27 Gdbm '' 4 Additional d-b branch conductance at Vds = VDSM, 28 Kdb '' -1 Dependence of d-b branch conductance with Vds 29 Vdsm '' 9 Voltage where D-B branch conductance becomes constant 30 C11o '' 4 Maximum input capacitance for VDS=VDSO>DELTDS, F 31 C11th '' 4 Minimum (threshold) input capacitance for Vds=VDSO, F 32 Vinfl '' 9 Inflection point in C11-Vgs characteristic, V 33 Deltgs '' 9 C11TH to C11O transition voltage, V 34 Deltds '' 9 Linear to saturation region transition parameter, V 35 Lambda '' -1 C11-Vds characteristic slope parameter, 1/V 36 C12sat '' 4 Input transcapacitance for Vgs=VINFL and Vds>DELTDS, F 37 Cgdsat '' 4 Gate drain capacitance for Vds>DELTDS, F 38 Kbk '' -1 Breakdown current coefficient at threshold 39 Vbr '' 9 Breakdown onset voltage, V 40 Nbr '' -1 Breakdown current exponent parameter 41 Idsoc '' 10 Open channel (maximum) value of Ids, A 42 Rd '' 1 Drain contact resistance, Ohms 43 Rs '' 1 Source contact resistance, Ohms 44 Rg '' 1 Gate metalization resistance, Ohms 45 Ugw '' 5 Unit gate width of device 46 Ngf '' -1 Number of device gate fingers 47 Vco '' 9 Voltage where transconductance compression begins, V 48 Vba '' 9 Transconductance compression tail-off parameter, V 49 Vbc '' 9 Transconductance roll-off to tail-off voltage, V 50 Mu '' -1 Vo dependent transconductance compression parameter 51 Deltgm '' -1 Slope of transconductance compression characteristic 52 Deltgmac '' -1 Slope of transconductance compression characteristic (AC) 53 Alpha '' 9 Transconductance saturation to compression transition, V 54 Kmod '' -1 Library model numbe 55 Kver '' -1 Version number 56 wVgfwd '' 9 Gate junction forward bias (warning), V 57 wBvgs '' 9 Gate-source reverse breakdown voltage (warning), V 58 wBvgd '' 9 Gate-drain reverse breakdown voltage (warning), V 59 wBvds '' 9 Drain-source breakdown voltage (warning), V 60 wIdsmax '' 10 Maximum drain-source current (warning), A 61 wPmax '' 8 Maximum power dissipation (warning), W END_ELEMENT EE_MOS1 EE_MOS1 2 1 Model EEMOSM1 -1 Model instance name 2 Temp '' 12 Device operating temperature END_ELEMENT EE_MOS1P EE_MOS1P 2 1 Model EEMOS1M1 -1 Model instance name 2 Temp '' 12 Device operating temperature END_ELEMENT EE_MOS1_Model EE_MOS1_Model 43 1 Is '' 10 Substrate diode reverse saturation current, A 2 N '' -1 Substrate diode ideality factor, dimensionless 3 F '' -1 Zero-bias substrate diode depletion capacitance, F 4 Vbi '' 9 Substrate diode built-in potential, V 5 Mj '' -1 Junction grading coefficient, dimensionless 6 Fc '' -1 Substrate depletion capacitance linearization point, dimensionless 7 Vbr '' 9 Breakdown onset voltage, V 8 Kbo '' -1 Breakdown current coefficient, dimensionless 9 Nbr '' -1 Breakdown current exponent parameter 10 Vinfl '' 9 Inflection point in Cgs-Vgs characteristic, V 11 Deltds '' 9 Capacitance forward to reverse mode transition parameter, V 12 Deltgs '' 9 Cgsth to Cgso transition voltage, V 13 Cgsmax '' 4 Maximum value of Cgs, F 14 Vgo '' 9 Gate-source voltage where transconductance is a maximum, V 15 Vto '' 9 Zero-bias threshold parameter 16 Gamma '' -1 Drain-source dependent threshold parameter, 1/V 17 Gmmax '' 3 Peak transconductance parameter, S 18 Delta '' 9 Transconductance tail-off rate parameter, V 19 Vbreak '' 9 Voltage where transconductance tail-off begins, V 20 Lambda '' -1 Output conductance parameter, 1/V 21 Vsatm '' 9 Maximum value of saturation voltage, V 22 Vgm '' 9 Gate-source volatge where saturation voltage is VSATM, V 23 Rdb '' 1 Dispersion source output impedence, Ohms 24 Cbs '' 4 Dispersion source capacitance 25 Gmmaxac '' 3 AC value of GMMAX, S 26 Deltac '' 9 AC value of DELT, V 27 Vbreakac '' 9 AC value of VBREAK, V 28 Vgoac '' 9 AC value of VGO, V 29 Lambdaac '' -1 AC value of LAMBDA, 1/V 30 Vsatmac '' 9 AC value of VSATM, V 31 Vgmac '' 9 AC value of VGM, V 32 Gdbm '' -1 Additional d-b branch conductance at Vds=VDSM 33 Kdb '' -1 Parameter which controls Vds dependence of D-B branch conductance 34 Vdsm '' 9 Voltage where D-B branch conductance becomes constant 35 Rd '' 1 Drain contact resistance, Ohms 36 Rs '' 1 Source contact resistance, Ohms 37 Rg '' 1 Gate metalization resistance, Ohms 38 Ris '' 1 Source end channel resistance, Ohms 39 Rid '' 1 Drain end channel resistance, Ohms 40 wBvg '' 9 Gate Oxide Breakdown Voltage (warning), V 41 wBvds '' 9 Drain-Source Breakdown Voltage (warning), V 42 wIdsmax '' 10 Maximum Drain-Source Current (warning), A 43 wPmax '' 8 Maximum Power Dissipation (warning), W END_ELEMENT EE_TOM EE_TOM 5 1 Model EETOM1 -1 Model instance name 2 W '' 5 New Unit Gate Width 3 N '' -1 New Number of Gate Fingers 4 Temp '' 12 Operating Temperature 5 Mode simtype_nonlin -1 Simulation Mode for This Device END_ELEMENT Envelope Envelope 48 1 MaxOrder 4 -1 Maximum combined order to be considered 2 Freq 1.0GHz 0 Frequency of fundamental 3 Order 3 -1 Maximum order of fundamental to be considered 4 NestLevel 2 -1 Levels of subcircuits to output 5 StatusLevel 3 -1 Degree of annotation 6 FundOversample 2 -1 Oversampling ratio for FFT 7 Oversample '' -1 Oversampling ratio for FFT (repeated) 8 PackFFT '' -1 Pack FFT in multi-tone analysis 9 MaxIters 10 -1 Max number of iterations 10 GuardThresh '' -1 Guard threshold 11 SamanskiiConstant 2 -1 Samanskii constant 12 Restart No -1 Do not use last solution as initial guess 13 ArcLevelMaxStep 0.0 -1 Maximum arc-length step for source-level continuation 14 MaxStepRatio 100 -1 Ratio of maximum to given number of steps 15 MaxShrinkage 1.0e-5 -1 Maximum step shrinkage 16 OutputAllSolns '' -1 Output spectra at all computed steps when sweeping 17 ArcMaxStep 0.0 -1 Maximum arc-length step 18 ArcMinValue '' -1 Minimum value for parameter during arclength continuation 19 ArcMaxValue '' -1 Maximum value for parameter during arclength continuation 20 UseGear '' -1 Use Gears method for envelope integration 21 EnvIntegOrder 1 -1 Numerical integration order for envelope 22 SweepOffset '' 6 Sweep variable offset 23 EnvNoise '' -1 Add noise sources during envelope simulation 24 EnvBandwidth 1 -1 Envelope relative bandwidth (default = 1) 25 EnvRelTrunc '' -1 Relative truncation factor for Envelope fitting 26 EnvAbsTrunc '' -1 Absolute truncation factor for Envelope fitting 27 EnvWarnPoorFit '' -1 Enables warning of poor envelope fits 28 EnvUsePoorFit '' -1 Use poor fits instead of constant values 29 EnvSkipDC_Fit '' -1 Dont do pole/zero fittting for baseband 30 ResetOsc '' -1 Reset initial oscillator envelope solution 31 OscMode '' -1 Flag to indicate oscillator mode 32 OscPortName '' -1 Oscillator port used to break feedback loop 33 IgnoreOscErrors '' -1 Continue sweep even after oscillation convergence error 34 SweepVar time -1 Name of variable or parameter to be swept 35 UseSweepPlan '' -1 Flag to indicate use of SweepPlan 36 SweepPlan '' -1 SweepPlan instance path name for sweep values 37 Start 0nsec 6 Start value 38 Stop 100nsec 6 Stop value 39 Step 1nsec 6 Step value 40 Center '' 6 Center value 41 Span '' 6 Span 42 Lin '' -1 Linear sweep 43 Dec '' -1 Number of points per decade 44 Log '' -1 Log sweep 45 Reverse '' -1 Reverse sweep 46 Pt '' -1 Single point 47 Sort 'LINEAR START STEP' -1 Sort values 48 Other '' -1 Output string to netlist END_ELEMENT FDD10P FDD10P 1 1 Equation list(prm("FddCurrent",1,1,)) -2 FDD Equation Defining A Constitutive Relationship END_ELEMENT FDD1P FDD1P 1 1 Equation list(prm("FddCurrent",1,1,)) -2 FDD Equation Defining A Constitutive Relationship END_ELEMENT FDD2P FDD2P 1 1 Equation list(prm("FddCurrent",1,1,)) -2 FDD Equation Defining A Constitutive Relationship END_ELEMENT FDD3P FDD3P 1 1 Equation list(prm("FddCurrent",1,1,)) -2 FDD Equation Defining A Constitutive Relationship END_ELEMENT FDD4P FDD4P 1 1 Equation list(prm("FddCurrent",1,1,)) -2 FDD Equation Defining A Constitutive Relationship END_ELEMENT FDD5P FDD5P 1 1 Equation list(prm("FddCurrent",1,1,)) -2 FDD Equation Defining A Constitutive Relationship END_ELEMENT FDD6P FDD6P 1 1 Equation list(prm("FddCurrent",1,1,)) -2 FDD Equation Defining A Constitutive Relationship END_ELEMENT FDD7P FDD7P 1 1 Equation list(prm("FddCurrent",1,1,)) -2 FDD Equation Defining A Constitutive Relationship END_ELEMENT FDD8P FDD8P 1 1 Equation list(prm("FddCurrent",1,1,)) -2 FDD Equation Defining A Constitutive Relationship END_ELEMENT FDD9P FDD9P 1 1 Equation list(prm("FddCurrent",1,1,)) -2 FDD Equation Defining A Constitutive Relationship END_ELEMENT FET FET 10 1 G 20.0uS 2 Magnitude of transconductance at DC 2 T 1.0nsec 6 Time delay associated with transconductance 3 F 1.0GHz 0 Transconductance roll-off frequency 4 Cgs 10.0pF 4 Gate to source capacitance 5 Ggs 1.0uS 2 Gate to source conductance 6 Ri 0.1ohm 1 Channel resistance 7 Cdg 10.0pF 4 Drain to gate capacitance 8 Cdc 10.0pF 4 Dipole layer capacitance 9 Cds 10.0pF 4 Drain to source capacitance 10 Rds 500.0ohm 1 Drain to source resistance END_ELEMENT FET2 FET2 11 1 G 20.0uS 2 Magnitude of transconductance at DC 2 T 1.0nsec 6 Time delay associated with transconductance 3 F 1.0GHz 0 Transconductance roll-off frequency 4 Cgs 10.0pF 4 Gate to source capacitance 5 Ggs 1.0uS 2 Gate to source conductance 6 Ri 0.1ohm 1 Channel resistance 7 Cdg 10.0pF 4 Drain to gate capacitance 8 Cdc 10.0pF 4 Dipole layer capacitance 9 Cds 10.0pF 4 Drain to source capacitance 10 Rds 500.0ohm 1 Drain to source resistance 11 Rs 0.1ohm 1 Source resistance END_ELEMENT FETN1 FETN1 8 1 G 0.03S 2 Transconductance 2 T 3.0psec 6 Time delay associated with transconductance 3 Cgs 0.40pF 4 Gate to source capacitance 4 Ri 3.0ohm 1 Channel resistance 5 Rds 300.0ohm 1 Drain to source resistance 6 P 0.8 -1 Noise parameter P 7 R 1.2 -1 Noise parameter R 8 C 0.90 -1 Noise parameter C END_ELEMENT FETN2 FETN2 9 1 G 0.03S 2 Transconductance 2 T 3.0psec 6 Time delay associated with transconductance 3 Cgs 0.40pF 4 Gate to source capacitance 4 Ri 3.0ohm 1 Channel resistance 5 Rs 3.70ohm 1 Source resistance 6 Rg 0.80ohm 1 Gate resistance 7 Kr 0.050 -1 Noise parameter Kr 8 Kc 1.4 -1 Noise parameter Kc 9 Kg 1.50 -1 Noise parameter Kg END_ELEMENT FETN3 FETN3 10 1 G 0.03S 2 Transconductance 2 T 3.0psec 6 Time delay associated with transconductance 3 Cgs 0.40pF 4 Gate to source capacitance 4 Ri 3.0ohm 1 Channel resistance 5 Rs 3.70ohm 1 Source resistance 6 Rg 0.80ohm 1 Gate resistance 7 K1 0.020 -1 Noise parameter K1 8 K2 0.800 -1 Noise parameter K2 9 K3 2.2 -1 Noise parameter K3 10 K4 160.0 -1 Noise parameter K4 END_ELEMENT FETN4 FETN4 8 1 G 0.03S 2 Transconductance 2 T 3.0psec 6 Time delay associated with transconductance 3 Cgs 0.40pF 4 Gate to source capacitance 4 Ri 3.0ohm 1 Channel resistance 5 Rs 3.70ohm 1 Source resistance 6 Rg 0.80ohm 1 Gate resistance 7 NFMin 2.0 -1 Minimum noise figure in dB 8 FRef 10.0GHz 0 Reference frequency at which NFMin is measured END_ELEMENT FETN4a FETN4a 7 1 G 0.03S 2 Transconductance 2 T 3.0psec 6 Time delay associated with transconductance 3 Cgs 0.40pF 4 Gate to source capacitance 4 Ri 3.0ohm 1 Channel resistance 5 Rs 3.70ohm 1 Source resistance 6 Rg 0.80ohm 1 Gate resistance 7 K 1.0 -1 Noise parameter K END_ELEMENT FETN5 FETN5 8 1 G 0.03S 2 Transconductance 2 T 3.0psec 6 Time delay associated with transconductance 3 Cgs 0.40pF 4 Gate to source capacitance 4 Ri 3.0ohm 1 Channel resistance 5 Rds 450.0ohm 1 Drain to source resistance 6 Rs 3.70ohm 1 Source resistance 7 Rg 0.80ohm 1 Gate resistance 8 Sio 710.0 -1 Noise parameter Sio END_ELEMENT FM_DemodTuned FM_DemodTuned 3 1 Sensitivity 1KHz 0 Demodulation Sensitivity, in Hz/Volt 2 Fnom 1GHz 0 Nominal Input Frequency 3 Rout 50ohm 1 Output Resistance END_ELEMENT FM_ModTuned FM_ModTuned 3 1 Sensitivity 1KHz 0 Modulation Sensitivity, Hz/Volt 2 Fnom 1GHz 0 Nominal Input Frequency 3 Rout 50ohm 1 Output Resistance END_ELEMENT FORMATA FORMATA 0 END_ELEMENT FORMATB FORMATB 0 END_ELEMENT FORMATC FORMATC 0 END_ELEMENT FORMATD FORMATD 0 END_ELEMENT FORMATE FORMATE 0 END_ELEMENT FSUB FSUB 5 1 Er 2.2 -1 Relative dielectric constant 2 Fdw 62.5mils 5 Thickness of slab 3 Fa 900.0mils 5 Inside width of enclosure 4 Fb 400.0mils 5 Inside height of enclosure 5 Cond 1.0E+306 -1 Conductor conductivity END_ELEMENT FreqMult FreqMult 14 1 S11 0 -1 Port1 reflection coefficient 2 S22 0 -1 Port2 reflection coefficient 3 G1 (-3.) 13 Power gain of input tone, in dB 4 G2 '' 13 Power gain of second harmonic, in dB 5 G3 '' 13 Power gain of third harmonic, in dB 6 G4 '' 13 Power gain of fourth harmonic, in dB 7 G5 '' 13 Power gain of fifth harmonic, in dB 8 G6 '' 13 Power gain of sixth harmonic, in dB 9 G7 '' 13 Power gain of seventh harmonic, in dB 10 G8 '' 13 Power gain of eighth harmonic, in dB 11 G9 '' 13 Power gain of ninth harmonic, in dB 12 PMin -40. -1 Minimum input power for specified conversion in dBm 13 Z1 50.ohm 1 reference impedance for port1 14 Z2 50.ohm 1 reference impedance for port2 END_ELEMENT GaAsFET GaAsFET 4 1 Model MESFETM1 -1 Model instance name 2 Area '' -1 Scaling Factor 3 Temp '' 12 Device operating temperature 4 Mode simtype_nonlin -1 Simulation Mode for This Device END_ELEMENT GaCircle GaCircle 1 1 Function list(our_gacir=ga_circle(S,2,51)) -1 ga_circle(2x2 S_matrix,gain,num_of_pts) END_ELEMENT GainComp GainComp 1 1 Function list(our_gcomp=gain_comp(S21[::,0])) -1 gain_comp(complex_transmission_coeff) END_ELEMENT GainRipple GainRipple 1 1 Function list(our_gr=ripple(mag(S21))) -1 ripple( gain_vector ) END_ELEMENT GlCircle GlCircle 1 1 Function list(our_glcir=gl_circle(S,2,51)) -1 gl_circle(2x2 S_matrix,gain,num_of_pts) END_ELEMENT Goal Goal 8 1 Expr '' -1 Goal expression 2 SimInstanceName '' -1 Simulation component name 3 Min '' -1 Minimum acceptable spec value 4 Max '' -1 Maximum acceptable spec value 5 Weight '' -1 Weighting used in error function calculation 6 RangeVar '' -1 Name of range variable 7 RangeMin '' -1 Minimum acceptable value for range variable 8 RangeMax '' -1 Maximum acceptable value for range variable END_ELEMENT GpCircle GpCircle 1 1 Function list(our_gpcir=gp_circle(S,2,51)) -1 gp_circle(2x2 S_matrix,gain,num_of_pts) END_ELEMENT GrpDelayRipple GrpDelayRipple 1 1 Function list(our_gd_rpl=ripple(S.delay(2,1))) -1 ripple( group_delay_vector ) END_ELEMENT GsCircle GsCircle 1 1 Function list(our_gscir=gs_circle(S,2,51)) -1 gs_circle(2x2 S_matrix,gain,num_of_pts) END_ELEMENT Gyrator Gyrator 1 1 Ratio 1 -1 gyrator ratio END_ELEMENT HPDiode HPDiode 2 1 Model HPDIODEM1 -1 Model instance name 2 Area '' 5 Junction END_ELEMENT HPF_Bessel HPF_Bessel 11 1 Fpass 1GHz 0 Passband Edge Frequency 2 Apass 3dB 13 Attenuation at Passband Edge, in dB 3 GDpass 0.9 -1 Group Delay Rolloff at Passband Edge, 0 < GDpass < 1 4 StopType OPEN -2 Input is open or short for stopband 5 MaxRej '' 13 Maximum Rejection Level , in dB 6 N 0 -1 Filter Order (if N > 0, it overwrites GDpass) 7 IL 0dB 13 Passband Insertion Loss, in dB 8 Qu 1E308 -1 Unloaded Quality Factor 9 Z1 50ohm 1 Input Port Reference Impedance 10 Z2 50ohm 1 Output Port Reference Impedance 11 Temp '' 12 Temperature in Degree Celsius END_ELEMENT HPF_Butterworth HPF_Butterworth 12 1 Fpass 1GHz 0 Passband Edge Frequency 2 Apass 3dB 13 Attenuation at Passband Edge, in dB 3 Fstop 0.8GHz 0 Stopband Edge Frequency 4 Astop 20dB 13 Attenuation at Stopband Edge, in dB 5 StopType OPEN -2 Input is open or short for stopband 6 MaxRej '' 13 Maximum Rejection Level , in dB 7 N 0 -1 Filter Order (if N > 0, it overwrites Fstop and Astop) 8 IL 0dB 13 Passband Insertion Loss, in dB 9 Qu 1E308 -1 Unloaded Quality Factor 10 Z1 50ohm 1 Input Port Reference Impedance 11 Z2 50ohm 1 Output Port Reference Impedance 12 Temp '' 12 Temperature in Degree Celsius END_ELEMENT HPF_Chebyshev HPF_Chebyshev 13 1 Fpass 1GHz 0 Passband Edge Frequency 2 Apass 1dB 13 Attenuation at Passband Edge, in dB 3 Ripple 1dB 13 Passband Ripple, in dB 4 Fstop 0.8GHz 0 Stopband Edge Frequency 5 Astop 20dB 13 Attenuation at Stopband Edge, in dB 6 StopType OPEN -2 Input is open or short for stopband 7 MaxRej '' 13 Maximum Rejection Level , in dB 8 N 0 -1 Filter Order (if N > 0, it overwrites Fstop and Astop) 9 IL 0dB 13 Passband Insertion Loss, in dB 10 Qu 1E308 -1 Unloaded Quality Factor 11 Z1 50ohm 1 Input Port Reference Impedance 12 Z2 50ohm 1 Output Port Reference Impedance 13 Temp '' 12 Temperature in Degree Celsius END_ELEMENT HPF_Elliptic HPF_Elliptic 12 1 Fpass 1GHz 0 Passband Edge Frequency 2 Ripple 1dB 13 Passband Ripple, in dB 3 Fstop 0.8GHz 0 Stopband Edge Frequency 4 Astop 20dB 13 Attenuation at Stopband Edge, in dB 5 StopType OPEN -2 Input is open or short for stopband 6 MaxRej '' 13 Maximum Rejection Level , in dB 7 N 0 -1 Filter Order (if N > 0, it overwrites Fstop and Astop) 8 IL 0dB 13 Passband Insertion Loss, in dB 9 Qu 1E308 -1 Unloaded Quality Factor 10 Z1 50ohm 1 Input Port Reference Impedance 11 Z2 50ohm 1 Output Port Reference Impedance 12 Temp '' 12 Temperature in Degree Celsius END_ELEMENT HPF_Gaussian HPF_Gaussian 11 1 Fpass 1GHz 0 Passband Edge Frequency 2 Apass 3dB 13 Attenuation at Passband Edge, in dB 3 GDpass 0.9 -1 Group Delay Rolloff at Passband Edge, 0 < GDpass < 1 4 StopType OPEN -2 Input is open or short for stopband 5 MaxRej '' 13 Maximum Rejection Level , in dB 6 N 0 -1 Filter Order (if N > 0, it overwrites GDpass) 7 IL 0dB 13 Passband Insertion Loss, in dB 8 Qu 1E308 -1 Unloaded Quality Factor 9 Z1 50ohm 1 Input Port Reference Impedance 10 Z2 50ohm 1 Output Port Reference Impedance 11 Temp '' 12 Temperature in Degree Celsius END_ELEMENT HPF_PoleZero HPF_PoleZero 7 1 Poles 'list(-0.7+j*0.7, -0.7-j*0.7)' -1 List of Complex Poles 2 Zeros '' -1 List of Complex Zeros 3 Gain 1.0 -1 Gain Factor 4 Fpass 1GHz 0 Passband Edge Frequency 5 StopType OPEN -2 Input is open or short for stopband 6 Z1 50ohm 1 Input Port Reference Impedance 7 Z2 50ohm 1 Output Port Reference Impedance END_ELEMENT HPF_Polynomial HPF_Polynomial 7 1 Numerator 1 -1 List of Numerator Coefficients 2 Denominator list(1,1.4,1) -1 List of Denominator Coefficients 3 Gain 1.0 -1 Gain Factor 4 Fpass 1GHz 0 Passband Edge Frequency 5 StopType OPEN -2 Input is open or short for stopband 6 Z1 50ohm 1 Input Port Reference Impedance 7 Z2 50ohm 1 Output Port Reference Impedance END_ELEMENT HPF_RaisedCos HPF_RaisedCos 9 1 Alpha 0.35 -1 Rolloff factor defining filters excess bandwidth, 0 <= Alpha <= 1 2 SymbolRate 24.3KHz 0 Digital symbol rate defining filters bandwidth 3 DelaySymbols 5 -1 Number of symbols delayed by the filter 4 Exponent 0.5 -1 Exponent Factor ( 0<= Exponent <= 1 ) 5 DutyCycle 100 -1 Pulse duty cycle in percent, used for sinc(x) correction 6 SincE y_n0 -2 Yes for applying Exponent Factor on sinc(x) correction 7 Gain 1.0 -1 Gain Factor 8 Zout 50ohm 1 Output Impedance 9 WindowType 0 -1 Window Type, 0=None, 1=Hann, 2=Hamming END_ELEMENT HP_Diode_Model HP_Diode_Model 4 1 File Diode.mds -1 Name of Rawfile 2 Rs '' 1 Series resistance 3 Ls '' 3 Parasitic inductance 4 Tt '' 6 Transit time,s END_ELEMENT HP_FET HP_FET 3 1 Model HPFETM1 -1 Model instance name 2 Wtot '' 5 Total gate width 3 N '' -1 Number of gate fingers END_ELEMENT HP_FET_Model HP_FET_Model 7 1 File State.mds -1 Name of Rawfile 2 Rs '' 1 Source resistance 3 Rg '' 1 Gate resistance 4 Rd '' 1 Drain resistance 5 Ls '' 3 Source inductance 6 Lg '' 3 Gate inductance 7 Ld '' 3 Drain inductance END_ELEMENT HP_MOS HP_MOS 3 1 Model HPMOSM1 -1 Model instance name 2 Wtot '' 5 Total gate width 3 N '' -1 Number of gate fingers END_ELEMENT HP_MOS_Model HP_MOS_Model 7 1 File State.mds -1 Name of Rawfile 2 Rs '' 1 Source resistance 3 Rg '' 1 Gate resistance 4 Rd '' 1 Drain resistance 5 Ls '' 3 Source inductance 6 Lg '' 3 Gate inductance 7 Ld '' 3 Drain inductance END_ELEMENT HYBCOMB1 HYBCOMB1 19 1 ZB 50.0ohm 1 Characteristic impedance of balun line 2 LenB 12.0mils 5 Physical length of balun line 3 KB 2.0 -1 Effective dielectric constant of balun line 4 AB 0.0 -1 Attenuation of balun line, dB per unit length 5 FB 1.0GHz 0 Frequency for scaling attenuation of balun line 6 NB 5.0 -1 Number of turns of balun line 7 ALB 960.0nH 3 Inductance index of balun line 8 ZX 50.0ohm 1 Characteristic impedance of transformer line 9 LenX 12.0mils 5 Physical length of transformer line 10 KX 2.0 -1 Effective dielectric constant of transformer line 11 AX 0.0 -1 Attenuation of transformer line, dB per unit length 12 FX 1.0GHz 0 Frequency for scaling attenuation of transformer line 13 NX 5.0 -1 Number of turns of transformer line 14 ALX 960.0nH 3 Inductance index of transformer line 15 TanD 0 -1 Dielectric loss tangent 16 Mur 1 -1 Relative permeability 17 TanM 0 -1 Permeability 18 Sigma 0 -1 Dielectric conductivity 19 Temp '' 12 Physical temperature END_ELEMENT HYBCOMB2 HYBCOMB2 19 1 ZB 50.0ohm 1 Characteristic impedance of balun line 2 LenB 12.0mils 5 Physical length of balun line 3 KB 2.0 -1 Effective dielectric constant of balun line 4 AB 0.0 -1 Attenuation of balun line, dB per unit length 5 FB 1.0GHz 0 Frequency for scaling attenuation of balun line 6 MUB 100.0 -1 Relative permeability of ferrite sleeve for balun line 7 LB 20.0nH 3 Inductance (per unit length) of balun line without the sleeve 8 ZX 50.0ohm 1 Characteristic impedance of transformer line 9 LenX 12.0mils 5 Physical length of transformer line 10 KX 2.0 -1 Effective dielectric constant of transformer line 11 AX 0.0 -1 Attenuation of transformer line, dB per unit length 12 FX 1.0GHz 0 Frequency for scaling attenuation of transformer line 13 MUX 100.0 -1 Relative permeability of ferrite sleeve for transformer line 14 LX 20.0nH 3 Inductance (per unit length) of transformer line without the sleeve 15 TanD 0 -1 Dielectric loss tangent 16 Mur 1 -1 Relative permeability 17 TanM 0 -1 Permeability 18 Sigma 0 -1 Dielectric conductivity 19 Temp '' 12 Physical temperature END_ELEMENT HYBPI HYBPI 9 1 G 20.0uS 2 Transconductance 2 T 1.0nsec 6 Transient time 3 Cpi 10.0pF 4 Base-emitter, PI capacitance 4 Rpi 0.01ohm 1 Base-emitter, PI resistance 5 Cmu 5.0pF 4 Base-collector, MU capacitance 6 Rmu 1000.0ohm 1 Base-collector, MU resistance 7 Rb 0.02ohm 1 Base resistance 8 Rc 500.0ohm 1 Collector resistance 9 Re 0.04ohm 1 Emitter resistance END_ELEMENT HarmonicBalance HarmonicBalance 92 1 MaxOrder 4 -1 Maximum combined order to be considered 2 Freq 1.0GHz 0 Frequency of fundamental 3 Order 3 -1 Maximum order of fundamental to be considered 4 NestLevel 2 -1 Levels of subcircuits to output 5 StatusLevel 2 -1 Degree of annotation 6 FundOversample 1 -1 Oversampling ratio for FFT 7 Oversample '' -1 Oversampling ratio for FFT (repeated) 8 PackFFT '' -1 Pack FFT in multi-tone analysis 9 MaxIters 10 -1 Max number of iterations 10 GuardThresh '' -1 Guard threshold 11 SamanskiiConstant 2 -1 Samanskii constant 12 Restart No -1 Do not use last solution as initial guess 13 ArcLevelMaxStep 0.0 -1 Maximum arc-length step for source-level continuation 14 MaxStepRatio 100 -1 Ratio of maximum to given number of steps 15 MaxShrinkage 1.0e-5 -1 Maximum step shrinkage 16 OutputAllSolns '' -1 Output spectra at all computed steps when sweeping 17 ArcMaxStep 0.0 -1 Maximum arc-length step 18 ArcMinValue '' -1 Minimum value for parameter during arclength continuation 19 ArcMaxValue '' -1 Maximum value for parameter during arclength continuation 20 SS_MixerMode '' -1 Flag to indicate SS mixer mode 21 SS_UseSweepPlan '' -1 Flag to indicate use of SweepPlan 22 SS_Plan '' -1 Instance/path name for small signal sweep values 23 SS_Start 1.0GHz 0 Start frequency 24 SS_Stop 10.0GHz 0 Stop frequency 25 SS_Step 1.0GHz 0 Step frequency 26 SS_Center '' 0 Center frequency 27 SS_Span '' 0 Span 28 SS_Lin '' -1 Linear sweep 29 SS_Dec '' -1 Number of points per decade 30 SS_Log '' -1 Log sweep 31 SS_Reverse '' -1 Reverse sweep 32 SS_Pt '' 0 Single frequency 33 SS_Sort 'LINEAR START STEP' -1 Sort frequencies 34 SS_Freq '' 0 Small signal mixer frequency 35 SS_Thresh '' -1 Small signal spectral threshold 36 UseAllSS_Freqs yes -1 Solve for all small signal mixer sidebands (requires more memory) 37 MergeSS_Freqs '' -1 Merge small- and large-signal solutions 38 InputFreq 1Hz 0 Input frequency for desired SSB mixing term 39 NLNoiseMode '' -1 Flag to indicate nonlinear noise mode 40 NLNoiseUseSweepPlan '' -1 Flag to indicate use of SweepPlan 41 NoiseFreqPlan '' -1 Instance/path name for noise sweep values 42 NLNoiseStart 1.0GHz 0 Start frequency 43 NLNoiseStop 10.0GHz 0 Stop frequency 44 NLNoiseStep 1.0GHz 0 Step frequency 45 NLNoiseCenter '' 0 Center frequency 46 NLNoiseSpan '' 0 Span 47 NLNoiseLin '' -1 Linear sweep 48 NLNoiseDec '' -1 Number of points per decade 49 NLNoiseLog '' -1 Log sweep 50 NLNoiseReverse '' -1 Reverse sweep 51 NLNoisePt '' 0 Single frequency 52 NLNoiseSort 'LINEAR START STEP' -1 Sort frequencies 53 FreqForNoise '' 0 Single point noise frequency 54 NoiseInputPort 1 -1 Input port for noise figure calculation 55 NoiseOutputPort 2 -1 Output port for noise figure calculation 56 PhaseNoise No -1 Specify noise frequency as offset from oscillation frequency 57 FM_Noise '' -1 Consider AM to FM conversion in oscillator phase noise analysis 58 NoiseNode '' -1 Nodename to compute noise voltage (repeatable) 59 SortNoise NoiseSortOff -1 Sort Noise Contribution by: Value/1, Name/2 (default: 0/NoOutput) 60 NoiseThresh '' -1 Noise Contribution Threshold 61 IncludePortNoise '' -1 Include port noise in noise voltage and currents 62 NoisyTwoPort '' -1 Compute noisy two-port parameters: sopt, rn, & nfmin 63 BandwidthForNoise 1.0Hz 0 Bandwidth for spectral noise analysis 64 OutputBudgetIV '' -1 Output top-level pin currents and voltages 65 UseKrylov '' -1 Use Krylov solver 66 UseInitialAWHB '' -1 Use initial AWHB stage before Krylov 67 AWHB_WindowSize '' -1 AWHB window size 68 GMRES_Restart '' -1 GMRES iterations before auto-restart 69 KrylovUsePacking '' -1 Use Krylov spectral packing 70 KrylovPackingThresh '' -1 Krylov bandwidth threshold 71 KrylovTightTol '' -1 GMRES tolerance 72 KrylovLooseTol '' -1 Loose tolerance for Krylov loop 73 KrylovLooseIters '' -1 Min number of iterations to invoke loose tolerance 74 KrylovMaxIters '' -1 Maximum number of GMRES iterations 75 OscMode '' -1 Flag to indicate oscillator mode 76 OscPortName '' -1 Oscillator port used to break feedback loop 77 IgnoreOscErrors '' -1 Continue sweep even after oscillation convergence error 78 SweepVar '' -1 Name of variable or parameter to be swept 79 UseSweepPlan '' -1 Flag to indicate use of SweepPlan 80 SweepPlan '' -1 SweepPlan instance path name for sweep values 81 Start 1 -1 Start value 82 Stop 10 -1 Stop value 83 Step 1 -1 Step value 84 Center '' -1 Center value 85 Span '' -1 Span 86 Lin '' -1 Linear sweep 87 Dec '' -1 Number of points per decade 88 Log '' -1 Log sweep 89 Reverse '' -1 Reverse sweep 90 Pt '' -1 Single point 91 Sort 'LINEAR START STEP' -1 Sort frequencies 92 Other '' -1 Output string to netlist END_ELEMENT Hybrid Hybrid 12 1 H11 '' 1 Input impedance, Ohms 2 H12 '' -1 Reverse voltage gain 3 H21 '' -1 Forward current gain 4 H22 '' 2 Output conductance 5 ImpNoncausalLength '' -1 Non-causal function impulse response order 6 ImpMode '' -1 Convolution mode 7 ImpMaxFreq '' 0 Maximum Frequency to which device is evaluated 8 ImpDeltaFreq '' 0 Sample spacing in frequency 9 ImpMaxOrder '' -1 Maximum allowed impulse response order 10 ImpWindow '' -1 Smoothing window 11 ImpRelTol '' -1 Relative impulse response truncation factor 12 ImpAbsTol '' -1 Absolute impulse response truncation factor END_ELEMENT Hybrid180 Hybrid180 6 1 Loss 0dB 13 Loss, in dB 2 GainBal 0dB 13 Gain Balance between Output Ports, in dB 3 PhaseBal 0deg 7 Phase Balance between Output Ports, in degree 4 Rref 50ohm 1 Port Reference Impedance 5 Temp '' 12 Temperature in Degree Celsius 6 Delay '' 6 time delay END_ELEMENT Hybrid90 Hybrid90 6 1 Loss 0dB 13 Loss, in dB 2 GainBal 0dB 13 Gain Balance between Output Ports, in dB 3 PhaseBal 0deg 7 Phase Balance between Output Ports, in degree 4 Rref 50ohm 1 Port Reference Impedance 5 Temp '' 12 Temperature in Degree Celsius 6 Delay '' 6 time delay END_ELEMENT IFINL IFINL 4 1 Subst FSub1 -1 Substrate instance name 2 D 20.0mils 5 Width of gap 3 L 1000.0mils 5 Length of finline 4 Temp '' 12 Physical temperature END_ELEMENT IFINLT IFINLT 3 1 Subst FSub1 -1 Substrate instance name 2 D 20.0mils 5 Width of gap 3 Temp '' 12 Physical temperature END_ELEMENT INDQ INDQ 5 1 L 1.0nH 3 Inductance 2 Q 50.0 -1 Quality factor 3 F 100.0MHz 0 Reference frequency for q 4 Mode loss_freq -1 Loss Mode for This Device 5 Rdc 0.0ohm 1 Resistance for modes 2 and 3 END_ELEMENT IP3in IP3in 1 1 Function list(our_ipi=ip3_in(vout,3,{1,0},{2,-1},50)) -1 ip3_in(vout,ss_gain,fund_freq,IM_freq,ref_imped) END_ELEMENT IP3out IP3out 1 1 Function list(our_ipo=ip3_out(vout,{1,0},{2,-1},50)) -1 ip3_out(vout,fund_freq,IM_freq,ref_imped) END_ELEMENT IPn IPn 1 1 Function list(our_ipn=ipn(Vplus,Vminus,current,{1,0},{2,-1},3)) -1 ipn(positive_voltage,negative_voltage,current,fund_freq,IM_freq,order) END_ELEMENT IQ_DemodTuned IQ_DemodTuned 2 1 Fnom 1GHz 0 Nominal Input Frequency 2 Rout 50ohm 1 Output Resistance END_ELEMENT IQ_ModTuned IQ_ModTuned 2 1 Fnom 1GHz 0 Nominal Input Frequency 2 Rout 50ohm 1 Output Resistance END_ELEMENT I_1Tone I_1Tone 7 1 I 1mA 10 Current at center frequency, use polar() for phase 2 Freq 1GHz 0 Center frequency 3 I_USB '' 10 Current of upper sideband small signal tone, use polar() for phase 4 I_LSB '' 10 Current of lower sideband small-signal tone, use polar() for phase 5 Idc '' 10 DC current 6 Iac 1mA 10 AC current, use polar() for phase 7 FundIndex '' -1 Fundamental Frequency Index (Can Be Used Instead of Specifying Freq") END_ELEMENT I_AC I_AC 3 1 Idc 0mA 10 DC current 2 Iac 1.0mA 10 AC current, use polar() for phase 3 Freq freq 0 Frequency END_ELEMENT I_DC I_DC 2 1 Idc 1.0mA 10 DC current 2 Iac '' 10 AC current, use polar() for phase END_ELEMENT I_Noise I_Noise 1 1 I_Noise 1pA 10 Noise current magnitude END_ELEMENT I_NoiseBD I_NoiseBD 7 1 K '' -1 Multiplicative Constant 2 Ie '' -1 DC Bias Current Exponent 3 A0 '' -1 Additive Constant in the Denominator 4 A1 '' -1 Multiplication Factor for the Frequency 5 Fe '' -1 Frequency Exponent 6 Elem '' -1 ID of an element such as R, FET, BJT 7 Pin '' -1 Element Pin Number or Name END_ELEMENT I_Probe I_Probe 5 1 Mode 0 -1 Mode: 0 => short, >0 => DC block, <0 => DC feed 2 C '' 4 DC block capacitance (transient only) 3 L '' 3 DC feed inductance(transient only) 4 Gain '' -1 Current gain 5 wImax '' 10 Maximum current (warning) END_ELEMENT I_SpectrumDataset I_SpectrumDataset 3 1 Dataset '' -1 Dataset name 2 Expression '' -1 Dataset variable or expression 3 Freq 1GHz 0 Fundamental frequency END_ELEMENT I_nHarm I_nHarm 5 1 Freq 1GHz 0 Fundamental frequency 2 I 1mA 10 N-th harmonic amplitude (use Add for more harmonics), use polar() for phase 3 Idc 0mA 10 DC component 4 Iac 1mA 10 AC current, use polar() for phase 5 FundIndex '' -1 Fundamental Frequency Index (Can Be Used Instead of Specifying Freq") END_ELEMENT I_nTone I_nTone 4 1 Freq 1GHz 0 N-th frequency tone (use Add for more tones) 2 I 1mA 10 Corresponding N-th tone amplitude, (use Add for more amplitudes), use polar() for phase 3 Idc 0mA 10 DC component 4 Iac 1mA 10 AC current, use polar() for phase END_ELEMENT Ifc Ifc 1 1 Function list(our_ifc=ifc(I_Probe1.i,{1,0})) -1 ifc(current_probe,desired_harm_freq) END_ELEMENT IfcTran IfcTran 1 1 Function 'list(our_ifct=ifc_tran(I_Probe1.i,1GHz, 1))' -1 ifc_tran(current_probe,fund_freq,num_of_harm) END_ELEMENT InitCond InitCond 2 1 V 0V 9 Initial node voltage for transient simulation 2 R '' 1 Connection resistance END_ELEMENT InitCondByName InitCondByName 1 1 NodeName list(prm("NodeSetForm",,0V,)) -1 NodeName/Inital voltage/Connection resistance END_ELEMENT IntegratorSML IntegratorSML 3 1 GainAC 1. -1 integrator gain 2 GainDC 0. -1 gain of dc constant 3 Rref 50.ohm 1 reference resistance for both ports END_ELEMENT IsolatorSML IsolatorSML 15 1 F1 '' 0 first frequency break point 2 F2 '' 0 second frequency break point 3 F3 '' 0 third frequency break point 4 Loss1 0.dB 13 attenuation in dB for frequencies <=F1 5 Loss2 0.dB 13 attenuation in dB for F1frequency<=F3 7 Loss4 0.dB 13 attenuation in dB for frequencies >F3 8 VSWR1 1. -1 VSWR at both ports for frequencies <=F1 9 VSWR2 1. -1 VSWR at both ports for F1frequency<=F3 11 VSWR4 1. -1 VSWR at both ports for frequencies >F3 12 Isolat 100.dB 13 isolation in dB 13 Z1 '' 1 reference impedance for port1 14 Z2 '' 1 reference impedance for port2 15 Temp '' 12 temperature in degrees Celsius END_ELEMENT IspecTran IspecTran 1 1 Function 'list(our_ispect=ispec_tran(I_Probe1.i,1GHz, 8))' -1 ispec_tran(current_probe,fund_freq,num_of_harm) END_ELEMENT It It 1 1 Function list(our_it=it(I_Probe1.i,0,10nsec,201)) -1 it(current_probe,tmin,tmax,num_of_pts) END_ELEMENT ItDataset ItDataset 9 1 Dataset '' -1 Dataset name 2 Expression '' -1 Dataset variable or expression 3 Freq 0GHz 0 Carrier frequency 4 Gain 1.0 -1 Gain to apply to dataset values; may be complex and time varying 5 Tmax '' 6 Maximum dataset time to use 6 Toffset '' 6 Initial dataset time offset 7 Tscale '' -1 Time speed-up scaling factor 8 Idc 0mA 10 DC offset current 9 Interpolation 0 -1 Interpolation method END_ELEMENT ItExp ItExp 6 1 I_Low 0mA 10 Initial current 2 I_High 1mA 10 Pulse current 3 Delay1 0nsec 6 Rise delay time 4 Tau1 1nsec 6 Rise time constant 5 Delay2 1nsec 6 Fall delay time 6 Tau2 1nsec 6 Fall time constant END_ELEMENT ItPWL ItPWL 1 1 I_Tran 'pwl(time, 0ns,0mA, 10ns,1mA, 20ns,0mA)' -1 pwl(time, time-voltage pairs), or pwlr(time, Ncycles, time-voltage pairs) END_ELEMENT ItPulse ItPulse 8 1 I_Low 0mA 10 Initial current 2 I_High 1mA 10 Pulse current 3 Delay 0nsec 6 Time delay 4 Edge linear -1 Rising and falling edge type 5 Rise 1nsec 6 Rise time 6 Fall 1nsec 6 Fall time 7 Width 3nsec 6 Pulse width 8 Period 10nsec 6 Fall time END_ELEMENT ItSFFM ItSFFM 5 1 Idc 0mA 10 Initial current offset 2 Amplitude 1mA 10 Amplitude of sinusoidal wave 3 CarrierFreq 1GHz 0 Carrier Frequency 4 ModIndex 0.5 -1 Modulation Index 5 SignalFreq 1MHz 0 Signal Frequency END_ELEMENT ItSine ItSine 6 1 Idc 0mA 10 Initial current offset 2 Amplitude 1mA 10 Amplitude of sinusoidal wave 3 Freq 1GHz 0 Frequency of sinusoidal wave 4 Delay 0nsec 6 Time Delay 5 Damping 0 -1 Damping factor 6 Phase 0deg 7 Phase value END_ELEMENT ItStep ItStep 4 1 I_Low 0mA 10 Initial current 2 I_High 1mA 10 Pulse current 3 Delay 0nsec 6 Time delay 4 Rise 1nsec 6 Rise time END_ELEMENT ItUserDef ItUserDef 3 1 I_Tran damped_sin(time) -1 Transient current 2 Idc '' 10 DC current 3 Iac 1mA 10 AC current END_ELEMENT JFET_Model JFET_Model 32 1 NFET y_n1 -1 Model Type - YES or NO 2 PFET y_n0 -1 Model Type - YES or NO 3 Vto '' 9 Pinch-off voltage, V 4 Beta '' -1 Transconductance parameter, A/(V*m)^2 5 Lambda '' -1 Channel length modulation parameter, 1/V 6 Rd '' 1 Drain Resistance, Ohm 7 Rs '' 1 Source Resistance, Ohm 8 Is '' 10 Gate Saturation Current, A 9 Js '' 10 Gate Saturation Current, A 10 Cgs '' 4 G-S Zero-bias Junction Cap., F 11 Cgd '' 4 G-D Zero-bias Junction Cap., F 12 Pb '' -1 Gate junction potential, V 13 Fc '' -1 Forward-bias Depletion Cap. Coefficient 14 Tnom '' 12 Nominal ambient temperature, Celsius 15 Kf '' -1 Flicker Noise Coefficient 16 Af '' -1 Flicker Noise Exponent 17 Imax '' 10 Explosion current, A 18 N '' -1 Gate P-N Emission Coefficient 19 Isr '' 10 Gate P-N Recombination Current, A 20 Nr '' -1 Isr Emission Coefficient 21 Alpha '' -1 Ionization coefficient, 1/V 22 Vk '' 9 Ionization knee voltage, V 23 M '' -1 Gate P-N grading coefficient 24 Vtotc '' -1 Vto temperature coefficient, V/Degree C 25 Betatce '' -1 Beta temperature coefficient, 1/Degree C 26 Xti '' -1 Temperature Exponent for Saturation Current 27 Ffe '' -1 Flicker noise frequency exponent 28 wBvgs '' 9 Gate-Source Reverse Breakdown Voltage (warning), V 29 wBvgd '' 9 Gate-Drain Reverse Breakdown Voltage (warning), V 30 wBvds '' 9 Drain-Source Breakdown Voltage (warning), V 31 wIdsmax '' 10 Maximum Drain-Source Current (warning), A 32 wPmax '' 8 Maximum Power Dissipation (warning), W END_ELEMENT JFET_NFET JFET_NFET 5 1 Model JFETM1 -1 Model instance name 2 Area '' -1 Junction Area Factor 3 Region '' -1 DC operating region, 0=off, 1=on, 2=rev, 3=ohmic 4 Temp '' 12 Device operating temperature 5 Mode simtype_nonlin -1 Simulation Mode for This Device END_ELEMENT JFET_PFET JFET_PFET 5 1 Model JFETM1 -1 Model instance name 2 Area '' -1 Junction Area Factor 3 Region '' -1 DC operating region, 0=off, 1=on, 2=rev, 3=ohmic 4 Temp '' 12 Device operating temperature 5 Mode simtype_nonlin -1 Simulation Mode for This Device END_ELEMENT L L 7 1 L 1.0nH 3 Inductance 2 R '' 1 Series resistance 3 Temp '' 12 Temperature 4 Tnom '' 12 Nominal temperature 5 TC1 '' 12 Temperature coefficient; per degree Celsius 6 TC2 '' 12 Temperature coefficient; per degree Celsius squared 7 InitCond '' -1 Initial condition for transient analysis END_ELEMENT LEVEL1_Model LEVEL1_Model 46 1 NMOS y_n1 -1 Model Type - YES or NO 2 PMOS y_n0 -1 Model Type - YES or NO 3 Idsmod 1 -1 1=LEVEL1 2=LEVEL2 3=LEVEL3 4=BSIM1 5=BSIM2 6=NMOD 8=BSIM3 4 Capmod 1 -1 0=NO CAP 1=CMEYER/WARD 2=SMOOTH 3=QMEYER 5 Vto '' 9 Zero-Bias Threshold Voltage, V 6 Kp '' -1 Transconductance parameter, A/V^2 7 Gamma '' -1 Bulk Threshold parameter, V^(1/2) 8 Phi '' 9 Surface Potential, V 9 Lambda '' -1 Channel length modulation parameter, 1/V 10 Rd '' 1 Drain Resistance, Ohm 11 Rs '' 1 Source Resistance, Ohm 12 Cbd '' 4 B-D Zero-bias Junction Cap., F 13 Cbs '' 4 B-S Zero-bias Junction Cap., F 14 Is '' 10 Gate Saturation Current, A 15 Pb '' 9 Bulk Junction Potential, V 16 Cgso '' -1 G-S Overlap Cap., F/m 17 Cgdo '' -1 G-D Overlap Cap., F/m 18 Cgbo '' -1 G-B Overlap Cap., F/m 19 Rsh '' -1 Drain and Source Diffusion Sheet Resistance, Ohm/Sq 20 Cj '' -1 Zero-bias Bulk Junction Cap., F/m^2 21 Mj '' -1 Junction grading coefficient 22 Cjsw '' -1 Zero-bias Bulk Junction Sidewall Cap., F/m 23 Mjsw '' -1 Junction Sidewall grading coefficient 24 Js '' -1 Gate Saturation Current, A/m^2 25 Tox '' 5 Oxide Thickness, m 26 Nsub '' -1 Substrate Doping, cm^(-3) 27 Nss '' -1 Surface State Density, cm^(-2) 28 Tpg '' -1 Type of Gate Material: +1=op -1=same 0=Al 29 Ld '' 5 Lateral Diffusion, m 30 Uo '' -1 Surface Mobility, cm^2/(V*s) 31 Kf '' -1 Flicker Noise Coefficient 32 Af '' -1 Flicker Noise Exponent 33 Fc '' -1 Forward-bias Depletion Cap. Coefficient 34 Rg '' 1 Gate Resistance, Ohm 35 Rds '' 1 Drain-Source Shunt Resistance, Ohm 36 Tnom '' 12 Nominal ambient temperature, Celsius 37 N '' -1 Bulk P-N Emission Coefficient 38 Tt '' -1 Bulk P-N Transit Time 39 Ffe '' -1 Flicker noise frequency exponent 40 Imax '' 10 Explosion current, A 41 wVsubfwd '' 9 Substrate Junction Forward Bias (warning), V 42 wBvsub '' 9 Substrate Junction Reverse Breakdown Voltage (warning), V 43 wBvg '' 9 Gate Oxide Breakdown Voltage (warning), V 44 wBvds '' 9 Drain-Source Breakdown Voltage (warning), V 45 wIdsmax '' 10 Maximum Drain-Source Current (warning), A 46 wPmax '' 8 Maximum Power Dissipation (warning), W END_ELEMENT LEVEL2_Model LEVEL2_Model 54 1 NMOS y_n1 -1 Model Type - YES or NO 2 PMOS y_n0 -1 Model Type - YES or NO 3 Idsmod 2 -1 1=LEVEL1 2=LEVEL2 3=LEVEL3 4=BSIM1 5=BSIM2 6=NMOD 8=BSIM3 4 Capmod 1 -1 0=NO CAP 1=CMEYER/WARD 2=SMOOTH 3=QMEYER 5 Vto '' 9 Zero-Bias Threshold Voltage, V 6 Kp '' -1 Transconductance parameter, A/V^2 7 Gamma '' -1 Bulk Threshold parameter, V^(1/2) 8 Phi '' 9 Surface Potential, V 9 Lambda '' -1 Channel length modulation parameter, 1/V 10 Rd '' 1 Drain Resistance, Ohm 11 Rs '' 1 Source Resistance, Ohm 12 Cbd '' 4 B-D Zero-bias Junction Cap., F 13 Cbs '' 4 B-S Zero-bias Junction Cap., F 14 Is '' 10 Gate Saturation Current, A 15 Pb '' 9 Bulk Junction Potential, V 16 Cgso '' -1 G-S Overlap Cap., F/m 17 Cgdo '' -1 G-D Overlap Cap., F/m 18 Cgbo '' -1 G-B Overlap Cap., F/m 19 Rsh '' -1 Drain and Source Diffusion Sheet Resistance, Ohm/Sq 20 Cj '' -1 Zero-bias Bulk Junction Cap., F/m^2 21 Mj '' -1 Junction grading coefficient 22 Cjsw '' -1 Zero-bias Bulk Junction Sidewall Cap., F/m 23 Mjsw '' -1 Junction Sidewall grading coefficient 24 Js '' -1 Gate Saturation Current, A/m^2 25 Tox '' 5 Oxide Thickness, m 26 Nsub '' -1 Substrate Doping, cm^(-3) 27 Nss '' -1 Surface State Density, cm^(-2) 28 Nfs '' -1 Fast Surface State Density, cm^(-2) 29 Tpg '' -1 Type of Gate Material: +1=op -1=same 0=Al 30 Xj '' 5 Metallurgical Junction Depth, m 31 Ld '' 5 Lateral Diffusion, m 32 Uo '' -1 Surface Mobility, cm^2/(V*s) 33 Ucrit '' -1 Critical Field for Mobility Degradation, V/cm 34 Uexp '' -1 Critical Field Exponent in Mobility Degradation 35 Vmax '' -1 Maximum Drift Velocity of Carriers, m/s 36 Neff '' -1 Total Channel Charge Coefficient 37 Xqc '' -1 Coefficient of Channel Charge Share 38 Kf '' -1 Flicker Noise Coefficient 39 Af '' -1 Flicker Noise Exponent 40 Fc '' -1 Forward-bias Depletion Cap. Coefficient 41 Delta '' -1 Width Effect on Threshold Voltage 42 Rg '' 1 Gate Resistance, Ohm 43 Rds '' 1 Drain-Source Shunt Resistance, Ohm 44 Tnom '' 12 Nominal ambient temperature, Celsius 45 N '' -1 Bulk P-N Emission Coefficient 46 Tt '' -1 Bulk P-N Transit Time 47 Ffe '' -1 Flicker noise frequency exponent 48 Imax '' 10 Explosion current, A 49 wVsubfwd '' 9 Substrate Junction Forward Bias (warning), V 50 wBvsub '' 9 Substrate Junction Reverse Breakdown Voltage (warning), V 51 wBvg '' 9 Gate Oxide Breakdown Voltage (warning), V 52 wBvds '' 9 Drain-Source Breakdown Voltage (warning), V 53 wIdsmax '' 10 Maximum Drain-Source Current (warning), A 54 wPmax '' 8 Maximum Power Dissipation (warning), W END_ELEMENT LEVEL3_MOD_Model LEVEL3_MOD_Model 59 1 NMOS y_n1 -1 Model Type - YES or NO 2 PMOS y_n0 -1 Model Type - YES or NO 3 Idsmod 6 -1 1=LEVEL1 2=LEVEL2 3=LEVEL3 4=BSIM1 5=BSIM2 6=NMOD 8=BSIM3 4 Capmod 1 -1 0=NO CAP 1=CMEYER/WARD 2=SMOOTH 3=QMEYER 5 Vto '' 9 Zero-Bias Threshold Voltage, V 6 Kp '' -1 Transconductance Parameter, A/V^2 7 Gamma '' -1 Bulk Threshold Parameter, V^(1/2) 8 Gamma2 '' -1 Bulk Threshold Parameter Deep in Substrate, V^(1/2) 9 Zeta '' -1 Mobility Modulation with Substrate Bias Parameter 10 Phi '' 9 Surface Potential, V 11 Rd '' 1 Drain Resistance, Ohm 12 Rs '' 1 Source Resistance, Ohm 13 Cbd '' 4 B-D Zero-bias Junction Cap., F 14 Cbs '' 4 B-S Zero-bias Junction Cap., F 15 Is '' 10 Gate Saturation Current, A 16 Pb '' 9 Bulk Junction Potential, V 17 Cgso '' -1 G-S Overlap Cap., F/m 18 Cgdo '' -1 G-D Overlap Cap., F/m 19 Cgbo '' -1 G-B Overlap Cap., F/m 20 Rsh '' -1 Drain and Source Diffusion Sheet Resistance, Ohm/Sq 21 Cj '' -1 Zero-bias Bulk Junction Cap., F/m^2 22 Mj '' -1 Junction grading coefficient 23 Cjsw '' -1 Zero-bias Bulk Junction Sidewall Cap., F/m 24 Mjsw '' -1 Junction Sidewall grading coefficient 25 Js '' -1 Gate Saturation Current, A/m^2 26 Tox '' 5 Oxide Thickness, m 27 Nsub '' -1 Substrate Doping, cm^(-3) 28 Nss '' -1 Surface State Density, cm^(-2) 29 Nfs '' -1 Fast Surface State Density, cm^(-2) 30 Tpg '' -1 Type of Gate Material: +1=op -1=same 0=Al 31 Xj '' 5 Metallurgical Junction Depth, m 32 Ld '' 5 Lateral Diffusion, m 33 Uo '' -1 Surface Mobility, cm^2/(V*s) 34 Ucrit '' -1 Critical Field for Mobility Degradation, V/cm 35 Uexp '' -1 Critical Field Exponent in Mobility Degradation 36 Vmax '' -1 Maximum Drift Velocity of Carriers, m/s 37 Xqc '' -1 Coefficient of Channel Charge Share 38 Kf '' -1 Flicker Noise Coefficient 39 Af '' -1 Flicker Noise Exponent 40 Fc '' -1 Forward-bias Depletion Cap. Coefficient 41 Delta '' -1 Width Effect on Threshold Voltage 42 Theta '' -1 Mobility Modulation, 1/V 43 Eta '' -1 Static Feedback 44 Kappa '' -1 Saturation Field Factor 45 Kappag '' -1 Field Correction Factor Gate Drive Dependence 46 Xmu '' -1 Subthreshold Fitting Model Parameter for NMOD 47 Rg '' 1 Gate Resistance, Ohm 48 Rds '' 1 Drain-Source Shunt Resistance, Ohm 49 Tnom '' 12 Nominal ambient temperature, Celsius 50 N '' -1 Bulk P-N Emission Coefficient 51 Tt '' -1 Bulk P-N Transit Time 52 Ffe '' -1 Flicker noise frequency exponent 53 Imax '' 10 Explosion current, A 54 wVsubfwd '' 9 Substrate Junction Forward Bias (warning), V 55 wBvsub '' 9 Substrate Junction Reverse Breakdown Voltage (warning), V 56 wBvg '' 9 Gate Oxide Breakdown Voltage (warning), V 57 wBvds '' 9 Drain-Source Breakdown Voltage (warning), V 58 wIdsmax '' 10 Maximum Drain-Source Current (warning), A 59 wPmax '' 8 Maximum Power Dissipation (warning), W END_ELEMENT LEVEL3_Model LEVEL3_Model 55 1 NMOS y_n1 -1 Model Type - YES or NO 2 PMOS y_n0 -1 Model Type - YES or NO 3 Idsmod 3 -1 1=LEVEL1 2=LEVEL2 3=LEVEL3 4=BSIM1 5=BSIM2 6=NMOD 8=BSIM3 4 Capmod 1 -1 0=NO CAP 1=CMEYER/WARD 2=SMOOTH 3=QMEYER 5 Vto '' 9 Zero-Bias Threshold Voltage, V 6 Kp '' -1 Transconductance parameter, A/V^2 7 Gamma '' -1 Bulk Threshold parameter, V^(1/2) 8 Phi '' 9 Surface Potential, V 9 Rd '' 1 Drain Resistance, Ohm 10 Rs '' 1 Source Resistance, Ohm 11 Cbd '' 4 B-D Zero-bias Junction Cap., F 12 Cbs '' 4 B-S Zero-bias Junction Cap., F 13 Is '' 10 Gate Saturation Current, A 14 Pb '' 9 Bulk Junction Potential, V 15 Cgso '' -1 G-S Overlap Cap., F/m 16 Cgdo '' -1 G-D Overlap Cap., F/m 17 Cgbo '' -1 G-B Overlap Cap., F/m 18 Rsh '' -1 Drain and Source Diffusion Sheet Resistance, Ohm/Sq 19 Cj '' -1 Zero-bias Bulk Junction Cap., F/m^2 20 Mj '' -1 Junction grading coefficient 21 Cjsw '' -1 Zero-bias Bulk Junction Sidewall Cap., F/m 22 Mjsw '' -1 Junction Sidewall grading coefficient 23 Js '' -1 Gate Saturation Current, A/m^2 24 Tox '' 5 Oxide Thickness, m 25 Nsub '' -1 Substrate Doping, cm^(-3) 26 Nss '' -1 Surface State Density, cm^(-2) 27 Nfs '' -1 Fast Surface State Density, cm^(-2) 28 Tpg '' -1 Type of Gate Material: +1=op -1=same 0=Al 29 Xj '' 5 Metallurgical Junction Depth, m 30 Ld '' 5 Lateral Diffusion, m 31 Uo '' -1 Surface Mobility, cm^2/(V*s) 32 Ucrit '' -1 Critical Field for Mobility Degradation, V/cm 33 Uexp '' -1 Critical Field Exponent in Mobility Degradation 34 Vmax '' -1 Maximum Drift Velocity of Carriers, m/s 35 Xqc '' -1 Coefficient of Channel Charge Share 36 Kf '' -1 Flicker Noise Coefficient 37 Af '' -1 Flicker Noise Exponent 38 Fc '' -1 Forward-bias Depletion Cap. Coefficient 39 Delta '' -1 Width Effect on Threshold Voltage 40 Theta '' -1 Mobility Modulation, 1/V 41 Eta '' -1 Static Feedback 42 Kappa '' -1 Saturation Field Factor 43 Rg '' 1 Gate Resistance, Ohm 44 Rds '' 1 Drain-Source Shunt Resistance, Ohm 45 Tnom '' 12 Nominal ambient temperature, Celsius 46 N '' -1 Bulk P-N Emission Coefficient 47 Tt '' -1 Bulk P-N Transit Time 48 Ffe '' -1 Flicker noise frequency exponent 49 Imax '' 10 Explosion current, A 50 wVsubfwd '' 9 Substrate Junction Forward Bias (warning), V 51 wBvsub '' 9 Substrate Junction Reverse Breakdown Voltage (warning), V 52 wBvg '' 9 Gate Oxide Breakdown Voltage (warning), V 53 wBvds '' 9 Drain-Source Breakdown Voltage (warning), V 54 wIdsmax '' 10 Maximum Drain-Source Current (warning), A 55 wPmax '' 8 Maximum Power Dissipation (warning), W END_ELEMENT LOS_Link LOS_Link 17 1 CenterFreq 1GHz 0 Link Center Frequency 2 BW 100MHz 0 Link Bandwidth 3 TxGain 0dB 13 Transmitting Antenna Gain, in dB 4 TxVSWR 1 -1 Transmitting Antenna VSWR 5 TxParabolaD '' 5 Transmitting Parabolic Antenna Diameter. Overwrite TxGain 6 TxEfficiency '' -1 Transmitting Parabolic Antenna Efficiency. Overwrite TxGain 7 RxGain 0dB 13 Receiving Antenna Gain, in dB 8 RxVSWR 1 -1 Receiving Antenna VSWR 9 RxParabolaD '' 5 Receiving Parabolic Antenna Diameter. Overwrite RxGain 10 RxEfficiency '' -1 Receiving Parabolic Antenna Efficiency. Overwrite RxGain 11 RxNoiseTemp 150C 12 Receiving Antenna Noise Temperature, in degree-Kelvin 12 PathLength (10km) 11 Line-Of-Sight Path Length 13 NotchFreq '' 0 Notch Frequency due to Ground Reflection Path Interference 14 NotchDepth '' 13 Notch Depth w.r.t. LOS Signal, in dB 15 DeltaDelay '' 6 Time Delay of Ground Reflection Path w.r.t. LOS Path 16 Z1 50ohm 1 Transmitting Antenna Reference Impedance 17 Z2 50ohm 1 Transmitting Antenna Reference Impedance END_ELEMENT LPF_Bessel LPF_Bessel 11 1 Fpass 1GHz 0 Passband Edge Frequency 2 Apass 3dB 13 Attenuation at Passband Edge, in dB 3 GDpass 0.9 -1 Group Delay Rolloff at Passband Edge, 0 < GDpass < 1 4 StopType OPEN -2 Input is open or short for stopband 5 MaxRej '' 13 Maximum Rejection Level , in dB 6 N 0 -1 Filter Order (if N > 0, it overwrites GDpass) 7 IL 0dB 13 Passband Insertion Loss, in dB 8 Qu 1E308 -1 Unloaded Quality Factor 9 Z1 50ohm 1 Input Port Reference Impedance 10 Z2 50ohm 1 Output Port Reference Impedance 11 Temp '' 12 Temperature in Degree Celsius END_ELEMENT LPF_Butterworth LPF_Butterworth 12 1 Fpass 1GHz 0 Passband Edge Frequency 2 Apass 3dB 13 Attenuation at Passband Edge, in dB 3 Fstop 1.2GHz 0 Stopband Edge Frequency 4 Astop 20dB 13 Attenuation at Stopband Edge, in dB 5 StopType OPEN -2 Input is open or short for stopband 6 MaxRej '' 13 Maximum Rejection Level , in dB 7 N 0 -1 Filter Order (if N > 0, it overwrites Fstop and Astop) 8 IL 0dB 13 Passband Insertion Loss, in dB 9 Qu 1E308 -1 Unloaded Quality Factor 10 Z1 50ohm 1 Input Port Reference Impedance 11 Z2 50ohm 1 Output Port Reference Impedance 12 Temp '' 12 Temperature in Degree Celsius END_ELEMENT LPF_Chebyshev LPF_Chebyshev 13 1 Fpass 1GHz 0 Passband Edge Frequency 2 Apass 1dB 13 Attenuation at Passband Edge, in dB 3 Ripple 1dB 13 Passband Ripple, in dB 4 Fstop 1.2GHz 0 Stopband Edge Frequency 5 Astop 20dB 13 Attenuation at Stopband Edge, in dB 6 StopType OPEN -2 Input is open or short for stopband 7 MaxRej '' 13 Maximum Rejection Level , in dB 8 N 0 -1 Filter Order (if N > 0, it overwrites Fstop and Astop) 9 IL 0dB 13 Passband Insertion Loss, in dB 10 Qu 1E308 -1 Unloaded Quality Factor 11 Z1 50ohm 1 Input Port Reference Impedance 12 Z2 50ohm 1 Output Port Reference Impedance 13 Temp '' 12 Temperature in Degree Celsius END_ELEMENT LPF_Elliptic LPF_Elliptic 12 1 Fpass 1GHz 0 Passband Edge Frequency 2 Ripple 1dB 13 Passband Ripple, in dB 3 Fstop 1.2GHz 0 Stopband Edge Frequency 4 Astop 20dB 13 Attenuation at Stopband Edge, in dB 5 StopType OPEN -2 Input is open or short for stopband 6 MaxRej '' 13 Maximum Rejection Level , in dB 7 N 0 -1 Filter Order (if N > 0, it overwrites Fstop and Astop) 8 IL 0dB 13 Passband Insertion Loss, in dB 9 Qu 1E308 -1 Unloaded Quality Factor 10 Z1 50ohm 1 Input Port Reference Impedance 11 Z2 50ohm 1 Output Port Reference Impedance 12 Temp '' 12 Temperature in Degree Celsius END_ELEMENT LPF_GMSK LPF_GMSK 5 1 BT 0.3 -1 Bandwidth-Time Product of Gaussian Filter 2 BitRate 270.833KHz 0 Bit rate defining bandwidth of filter 3 DelayBits 5 -1 Number of bits delayed by the filter 4 Gain 1.0 -1 Gain Factor 5 Zout 50ohm 1 Output Impedance END_ELEMENT LPF_Gaussian LPF_Gaussian 11 1 Fpass 1GHz 0 Passband Edge Frequency 2 Apass 3dB 13 Attenuation at Passband Edge, in dB 3 GDpass 0.9 -1 Group Delay Rolloff at Passband Edge, 0 < GDpass < 1 4 StopType OPEN -2 Input is open or short for stopband 5 MaxRej '' 13 Maximum Rejection Level , in dB 6 N 0 -1 Filter Order (if N > 0, it overwrites GDpass) 7 IL 0dB 13 Passband Insertion Loss, in dB 8 Qu 1E308 -1 Unloaded Quality Factor 9 Z1 50ohm 1 Input Port Reference Impedance 10 Z2 50ohm 1 Output Port Reference Impedance 11 Temp '' 12 Temperature in Degree Celsius END_ELEMENT LPF_PoleZero LPF_PoleZero 7 1 Poles 'list(-0.7+j*0.7, -0.7-j*0.7)' -1 List of Complex Poles 2 Zeros '' -1 List of Complex Zeros 3 Gain 1.0 -1 Gain Factor 4 Fpass 1GHz 0 Passband Edge Frequency 5 StopType OPEN -2 Input is open or short for stopband 6 Z1 50ohm 1 Input Port Reference Impedance 7 Z2 50ohm 1 Output Port Reference Impedance END_ELEMENT LPF_Polynomial LPF_Polynomial 7 1 Numerator 1 -1 List of Numerator Coefficients 2 Denominator list(1,1.4,1) -1 List of Denominator Coefficients 3 Gain 1.0 -1 Gain Factor 4 Fpass 1GHz 0 Passband Edge Frequency 5 StopType OPEN -2 Input is open or short for stopband 6 Z1 50ohm 1 Input Port Reference Impedance 7 Z2 50ohm 1 Output Port Reference Impedance END_ELEMENT LPF_RaisedCos LPF_RaisedCos 9 1 Alpha 0.35 -1 Rolloff factor defining filters excess bandwidth, 0 <= Alpha <= 1 2 SymbolRate 24.3KHz 0 Digital symbol rate defining filters bandwidth 3 DelaySymbols 5 -1 Number of symbols delayed by the filter 4 Exponent 0.5 -1 Exponent Factor ( 0<= Exponent <= 1 ) 5 DutyCycle 100 -1 Pulse duty cycle in percent, used for sinc(x) correction 6 SincE y_n0 -2 Yes for applying Exponent Factor on sinc(x) correction 7 Gain 1.0 -1 Gain Factor 8 Zout 50ohm 1 Output Impedance 9 WindowType 0 -1 Window Type, 0=None, 1=Hann, 2=Hamming END_ELEMENT LQ_Conn LQ_Conn 5 1 L 1.0nH 3 Inductance 2 Q 50.0 -1 Quality factor 3 F 100.0MHz 0 Reference frequency for q 4 Mode loss_freq -1 Loss Mode for This Device 5 Temp '' 12 Temperature END_ELEMENT LQ_Pad1 LQ_Pad1 8 1 L 1.0nH 3 Inductance 2 Q 50.0 -1 Quality factor 3 F 100.0MHz 0 Reference frequency for q 4 Mode loss_freq -1 Loss Mode for This Device 5 Temp '' 12 Temperature 6 W 25.0mils 5 W 7 S 10.0mils 5 S 8 L1 50.0mils 5 L END_ELEMENT LQ_Space LQ_Space 6 1 L 1.0nH 3 Inductance 2 Q 50.0 -1 Quality factor 3 F 100.0MHz 0 Reference frequency for q 4 Mode loss_freq -1 Loss Mode for This Device 5 Temp '' 12 Temperature 6 L1 50.0mils 5 L END_ELEMENT LSSP LSSP 48 1 MaxOrder 4 -1 Maximum combined order to be considered 2 Freq 1.0GHz 0 Frequency of fundamental 3 Order 3 -1 Maximum order of fundamental to be considered 4 NestLevel 2 -1 Levels of subcircuits to output 5 StatusLevel 2 -1 Degree of annotation 6 FundOversample 1 -1 Oversampling ratio for FFT 7 Oversample '' -1 Oversampling ratio for FFT (repeated) 8 PackFFT '' -1 Pack FFT in multi-tone analysis 9 MaxIters 10 -1 Max number of iterations 10 GuardThresh '' -1 Guard threshold 11 SamanskiiConstant 2 -1 Samanskii constant 12 Restart No -1 Do not use last solution as initial guess 13 ArcLevelMaxStep 0.0 -1 Maximum arc-length step for source-level continuation 14 MaxStepRatio 100 -1 Ratio of maximum to given number of steps 15 MaxShrinkage 1.0e-5 -1 Maximum step shrinkage 16 OutputAllSolns '' -1 Output spectra at all computed steps when sweeping 17 ArcMaxStep 0.0 -1 Maximum arc-length step 18 ArcMinValue '' -1 Minimum value for parameter during arclength continuation 19 ArcMaxValue '' -1 Maximum value for parameter during arclength continuation 20 UseKrylov '' -1 Use Krylov solver 21 UseInitialAWHB '' -1 Use initial AWHB stage before Krylov 22 AWHB_WindowSize '' -1 AWHB window size 23 GMRES_Restart '' -1 GMRES iterations before auto-restart 24 KrylovUsePacking '' -1 Use Krylov spectral packing 25 KrylovPackingThresh '' -1 Krylov bandwidth threshold 26 KrylovTightTol '' -1 GMRES tolerance 27 KrylovLooseTol '' -1 Loose tolerance for Krylov loop 28 KrylovLooseIters '' -1 Min number of iterations to invoke loose tolerance 29 KrylovMaxIters '' -1 Maximum number of GMRES iterations 30 GMRES_Orthog '' -1 Re-orthogonalize at every GMRES iteration 31 OutputBudgetIV '' -1 Output top-level pin currents and voltages 32 CalcS_Params Yes -1 Calculate large-signal S-params 33 LSSP_FreqAtPort '' 0 Frequency to calculate at port (repeatable) 34 SweepVar '' -1 Name of variable or parameter to be swept 35 UseSweepPlan '' -1 Flag to indicate use of SweepPlan 36 SweepPlan '' -1 SweepPlan instance path name for sweep values 37 Start 0 -1 Start value 38 Stop 100 -1 Stop value 39 Step 1 -1 Step value 40 Center '' -1 Center value 41 Span '' -1 Span 42 Lin '' -1 Linear sweep 43 Dec '' -1 Number of points per decade 44 Log '' -1 Log sweep 45 Reverse '' -1 Reverse sweep 46 Pt '' 0 Single point 47 Sort 'LINEAR START STEP' -1 Sort values 48 Other '' -1 Output string to netlist END_ELEMENT L_Conn L_Conn 1 1 L 1.0nH 3 Inductance END_ELEMENT L_Pad1 L_Pad1 4 1 L 1.0nH 3 Inductance 2 W 25.0mils 5 W 3 S 10.0mils 5 S 4 L1 50.0mils 5 L END_ELEMENT L_Space L_Space 2 1 L 1.0nH 3 Inductance 2 L1 50.0mils 5 L END_ELEMENT L_StabCircle L_StabCircle 1 1 Function list(our_l_stabcir=l_stab_circle(S,51)) -1 l_stab_circle(2x2 S_matrix,num_of_pts) END_ELEMENT LogACDemod LogACDemod 3 1 CurrentSlope 1.e-3 -1 Gradient of transfer characteristic in Amperes/decade 2 VoltIntercept 1.e-3V 9 Vin for zero output 3 Z1 50.ohm 1 Reference Impedance for Port1 END_ELEMENT LogDC LogDC 3 1 VoltSlope 1.e-3 -1 Gradient of transfer characteristic in Volts/decade 2 VoltIntercept 1.e-3V 9 Vin for zero output 3 Z1 50.ohm 1 Reference Impedance for Port1 END_ELEMENT LogSuccDetect LogSuccDetect 4 1 NumStages 5 -1 Number of stages 2 StageGain 10.dB 13 Gain per stage in dB 3 CurrentSlope 1.e-3 -1 Gradient of transfer characteristic in Amperes/decade 4 Z1 50.ohm 1 Reference Impedance for Port1 END_ELEMENT LogTrue LogTrue 4 1 NumStages 5 -1 Number of stages 2 StageGain 10.dB 13 Gain per stage in dB 3 VoltLimit 1.V 9 Limiting voltage of each stage 4 Z1 50.ohm 1 Reference Impedance for Port1 END_ELEMENT MACLIN MACLIN 10 1 Subst MSub1 -1 Substrate instance name 2 W1 25.0mils 5 Width of conductor 1 3 W2 10.0mils 5 Width of conductor 2 4 S 5.0mils 5 Conductor spacing 5 L 100.0mils 5 Conductor length 6 Temp '' 12 Physical temperature 7 WA 10.0mils 5 (for Layout option) Width of line that connects to pin 1 8 WB 10.0mils 5 (for Layout option) Width of line that connects to pin 2 9 WC 10.0mils 5 (for Layout option) Width of line that connects to pin 3 10 WD 10.0mils 5 (for Layout option) Width of line that connects to pin 4 END_ELEMENT MACLIN3 MACLIN3 12 1 Subst MSub1 -1 Substrate instance name 2 W1 25.0mils 5 Width of conductor 1 3 W2 15.0mils 5 Width of conductor 2 4 W3 15.0mils 5 Width of conductor 3 5 S1 8.0mils 5 Spacing between conductors 1 and 2 6 S2 12.0mils 5 Spacing between conductors 2 and 3 7 L 100.0mils 5 Conductor length 8 Temp '' 12 Physical temperature 9 WA 10.0mils 5 (for Layout option) Width of line that connects to pin 1 10 WB 10.0mils 5 (for Layout option) Width of line that connects to pin 3 11 WC 10.0mils 5 (for Layout option) Width of line that connects to pin 4 12 WD 10.0mils 5 (for Layout option) Width of line that connects to pin 6 END_ELEMENT MBEND MBEND 5 1 Subst MSub1 -1 Substrate instance name 2 W 25.0mils 5 Conductor width 3 Angle 90deg 7 Angle of bend 4 M 0.6 -1 Miter fraction 5 Temp '' 12 Physical temperature 6 AutomaticWidth 'Disabled' -1 END_ELEMENT MBEND2 MBEND2 3 1 Subst MSub1 -1 Substrate instance name 2 W 25.0mils 5 Conductor width 3 Temp '' 12 Physical temperature 6 AutomaticWidth 'Disabled' -1 END_ELEMENT MBEND3 MBEND3 3 1 Subst MSub1 -1 Substrate instance name 2 W 25.0mils 5 Conductor width 3 Temp '' 12 Physical temperature 6 AutomaticWidth 'Disabled' -1 END_ELEMENT MBSTUB MBSTUB 6 1 Subst MSub1 -1 Substrate instance name 2 W 25.0mils 5 Width of feed line 3 Ro 60.0mils 5 Outer radius of circular sector 4 Angle 60deg 7 Angle subtended by circular sector 5 D 3.0mils 5 Insertion depth of circular sector in feed line 6 Temp '' 12 Physical temperature END_ELEMENT MCFIL MCFIL 7 1 Subst MSub1 -1 Substrate instance name 2 W 25.0mils 5 Line width 3 S 10.0mils 5 Spacing between lines 4 L 100.0mils 5 Line length 5 Temp '' 12 Physical temperature 6 W1 20.0mils 5 (for Layout option) Width of line that connects to pin 1 7 W2 20.0mils 5 (for Layout option) Width of line that connects to pin 2 END_ELEMENT MCLIN MCLIN 9 1 Subst MSub1 -1 Substrate instance name 2 W 25.0mils 5 Line width 3 S 10.0mils 5 Spacing between lines 4 L 100.0mils 5 Line length 5 Temp '' 12 Physical temperature 6 W1 20.0mils 5 (for Layout option) Width of line that connects to pin 1 7 W2 20.0mils 5 (for Layout option) Width of line that connects to pin 2 8 W3 20.0mils 5 (for Layout option) Width of line that connects to pin 3 9 W4 20.0mils 5 (for Layout option) Width of line that connects to pin 4 END_ELEMENT MCORN MCORN 3 1 Subst MSub1 -1 Substrate instance name 2 W 25.0mils 5 Conductor width 3 Temp '' 12 Physical temperature 4 AutomaticWidth 'Disabled' -1 END_ELEMENT MCROS MCROS 5 1 Subst MSub1 -1 Substrate instance name 2 W1 25.0mils 5 Conductor width at pin 1 3 W2 50.0mils 5 Conductor width at pin 2 4 W3 25.0mils 5 Conductor width at pin 3 5 W4 50.0mils 5 Conductor width at pin 4 6 AutomaticWidth 'Disabled' -1 END_ELEMENT MCROSO MCROSO 6 1 Subst MSub1 -1 Substrate instance name 2 W1 25.0mils 5 Conductor width at pin 1 3 W2 50.0mils 5 Conductor width at pin 2 4 W3 25.0mils 5 Conductor width at pin 3 5 W4 50.0mils 5 Conductor width at pin 4 6 Temp '' 12 Physical temperature END_ELEMENT MCURVE MCURVE 5 1 Subst MSub1 -1 Substrate instance name 2 W 25.0mils 5 Conductor width 3 Angle 90deg 7 Angle subtended by the bend 4 Radius 100.0mils 5 Radius (measured to strip centerline) 5 Temp '' 12 Physical temperature 6 AutomaticWidth 'Disabled' -1 END_ELEMENT MCURVE2 MCURVE2 6 1 Subst MSub1 -1 Substrate instance name 2 W 25.0mils 5 Conductor width 3 Angle 90deg 7 Angle of bend 4 Radius 100.0mils 5 Radius (measured to strip centerline) 5 Nmode 2 -1 Number of modes 6 Temp '' 12 Physical temperature 7 AutomaticWidth 'Disabled' -1 END_ELEMENT MEANDER_FINAL MEANDER_FINAL 25 1 N 0 -1 Number of points (not including mousepoint) 2 W 10.0mils 5 Width of meander line 3 Subst MSub1 -1 Substrate 4 Layer smt_cond -1 Layer 5 X0 0mils 5 XOrigin of (U,V) -- not used in shape directly 6 Y0 0mils 5 YOrigin of (U,V) -- not used in shape directly 7 AbsA 0deg 7 Angle CCW of positive U axis with positive X axis -- not used in shape directly 8 A 0deg 7 Angle CCW between shape and PA's port angle 9 CType 0 -1 0=Mitre, 1=Radius, 2=Corner, 3=Free radius 10 MP 30 -1 Mitre percentage 11 R 5.0mils 5 Circle endpoint radius 12 PA '' -2 Name of pin attached to the start of this meander line -- not used in shape directly 13 PB '' -2 Name of pin attached to the end of this meander line -- not used in shape directly 14 StripType MICROSTRIP -1 Type; can be MICROSTRIP or STRIPLINE 15 FixedLength 0mils 5 Placeholder for returned fixed length generated during shape calc 16 MovableLength 0mils 5 Placeholder for returned movable length generated during shape calc 17 RF_REGION '' -2 Region placeholder 18 RF_MEANDER_VERSION rfc7 -2 Version number placeholder 19 RF_MEANDER_ID '' -2 Meander ID placeholder 20 'Meander Type' 0 -1 0=meander line, 1=path, 2=polygon, 3=polyline, 4=circle 21 npts 0 -1 Number of points around the periphery 22 npts_cl 0 -1 Number of points on the centerline 23 Clearance 0mils 5 Placeholder for MEANDER_MOVABLE_CLR 24 MAngle -1deg 7 Region angle when meander is added 25 TotalFixedLength 0mils 5 Placeholder for returned fixed length generated during shape calc END_ELEMENT MEANDER_FIXED MEANDER_FIXED 15 1 N 0 -1 Number of points (not including mousepoint) 2 W 10.0mils 5 Width of meander line 3 Subst MSub1 -1 Substrate 4 Layer smt_cond -1 Layer 5 X0 0mils 5 XOrigin of (U,V) -- not used in shape directly 6 Y0 0mils 5 YOrigin of (U,V) -- not used in shape directly 7 AbsA 0deg 7 Angle CCW of positive U axis with positive X axis -- not used in shape directly 8 A 0deg 7 Angle CCW between shape and PA's port angle 9 CType 0 -1 0=mitre, 1=circle, 2=square 10 MP 30 -1 Mitre percentage 11 R 5.0mils 5 Circle endpoint radius 12 PA '' -1 Name of pin attached to the start of this meander line -- not used in shape directly 13 PB '' -1 Name of pin attached to the end of this meander line -- not used in shape directly 14 StripType MICROSTRIP -1 Type; can be MICROSTRIP, PCBTRACE, or STRIPLINE 15 FixedLength 0mils 5 Placeholder for returned fixed length generated during shape calc 16 TotalFixedLength 0mils 5 Placeholder for returned fixed length generated during shape calc END_ELEMENT MEANDER_MOVABLE MEANDER_MOVABLE 16 1 N 0 -1 Number of points (not including mousepoint) 2 W 10.0mils 5 Width of meander line 3 Subst MSub1 -1 Substrate 4 Layer smt_cond -1 Layer 5 X0 0mils 5 XOrigin of (U,V) -- not used in shape directly 6 Y0 0mils 5 YOrigin of (U,V) -- not used in shape directly 7 AbsA 0deg 7 Angle CCW of positive U axis with positive X axis -- not used in shape directly 8 A 0deg 7 Angle CCW between shape and PA's port angle 9 CType 0 -1 0=mitre, 1=circle, 2=square 10 MP 30 -1 Mitre percentage 11 R 5.0mils 5 Circle endpoint radius 12 PA '' -1 Name of pin attached to the start of this meander line -- not used in shape directly 13 PB '' -1 Name of pin attached to the end of this meander line -- not used in shape directly 14 StripType MICROSTRIP -1 Type; can be MICROSTRIP, PCBTRACE, or STRIPLINE 15 MovableLength 0mils 5 Placeholder for returned movable length generated during shape calc 16 Clearance 0mils 5 Placeholder for MEANDER_MOVABLE_CLR END_ELEMENT MEANDER_MOVABLE_CLR MEANDER_MOVABLE_CLR 16 1 N 0 -1 Number of points (not including mousepoint) 2 W 10.0mils 5 Width of meander line 3 Subst MSub1 -1 Substrate 4 Layer smt_cond -1 Layer 5 X0 0mils 5 XOrigin of (U,V) -- not used in shape directly 6 Y0 0mils 5 YOrigin of (U,V) -- not used in shape directly 7 AbsA 0deg 7 Angle CCW of positive U axis with positive X axis -- not used in shape directly 8 A 0deg 7 Angle CCW between shape and PA's port angle 9 CType 0 -1 0=mitre, 1=circle, 2=square 10 MP 30 -1 Mitre percentage 11 R 5.0mils 5 Circle endpoint radius 12 PA '' -1 Name of pin attached to the start of this meander line -- not used in shape directly 13 PB '' -1 Name of pin attached to the end of this meander line -- not used in shape directly 14 StripType MICROSTRIP -1 Type; can be MICROSTRIP, PCBTRACE, or STRIPLINE 15 MovableLength 0mils 5 Placeholder for returned movable length generated during shape calc 16 Clearance 0mils 5 Placeholder for MEANDER_MOVABLE_CLR END_ELEMENT MEXTRAM_Model MEXTRAM_Model 71 1 NPN y_n1 -1 Model Type - YES or NO 2 PNP y_n0 -1 Model Type - YES or NO 3 Release 503 -1 Selection of MEXTRAM Release 503, 504, 505 4 Exmod yes -1 Flag for Extended Modeling of the Reverse Current Gain 5 Exphi yes -1 Flag for Distributed High Frequency Effects in Transient 6 Exavl yes -1 Flag of Extended Modeling of Avalanche Currents 7 Is '' -1 Collector-Emitter Saturation Current, A/m^2 8 Bf '' -1 Ideal Forward Current Gain 9 Xibi '' -1 Fraction of Ideal Base Current that belongs to the Sidewall 10 Ibf '' -1 Saturation Current of the Non-Ideal Forward Base Current, A/m^2 11 Vlf '' 9 Cross-Over Voltage of the Non-Ideal Forward Base Current, V 12 Ik '' -1 High Injection Knee Current, A/m^2 13 Bri '' -1 Ideal Reverse Current Gain 14 Ibr '' -1 Saturation Current of the Non-Ideal Reverse Base Current, A/m^2 15 Vlr '' 9 Cross-Over Voltage of the Non-Ideal Reverse Base Current, V 16 Xext '' -1 Part that depends on the Base-Collector Voltage Vbc1 17 Qb0 '' -1 Base Charge at Zero Bias 18 Eta '' -1 Factor of the Built-in Field of the Base 19 Avl '' -1 Weak Avalanche Parameter 20 Efi '' -1 Electric Field Intercep 21 Ihc '' -1 Critial Current for Hot Carriers, A/m^2 22 Rcc '' 1 Constant Part of the Collector Resistance, Ohms/m^2 23 Rcv '' 1 RCV Resistance of the Unmodulated Epilayer, Ohms/m^2 24 Scrcv '' 1 Space Charge Resistance of the Epilayer, Ohms/m^2 25 Sfh '' -1 Current Spreading Factor Epilayer 26 Rbc '' 1 Constant Part of the Base Resistance, Ohms/m^2 27 Rbv '' 1 Variable Part of the Base Resistance, Ohms/m^2 28 Re '' 1 Emitter Resistance, Ohms/m^2 29 Taune '' 6 Minimum Delay Time of Neutral and Emitter Charge, S 30 Mtau '' -1 Non-Ideality Factor of the Neutral and Emitter Charge, S 31 Cje '' 4 B-E Zero-bias Junction Cap., F/m^2 32 Vde '' 9 B-E Diffusion Voltage, V 33 Pe '' -1 B-E Grading Coefficient 34 Xcje '' -1 Fraction of B-E Capacitance that belongs to the Sidewall 35 Cjc '' 4 B-C Zero-bias Junction Cap., F/m^2 36 Vdc '' 9 B-C Diffusion Voltage, V 37 Pc '' -1 B-C Grading Coefficient 38 Xp '' -1 Constant Part of Cjc 39 Mc '' -1 Collector Current Modulation Coefficient 40 Xcjc '' -1 Fraction of B-C Capacitance Under the Emitter Area 41 Tref '' 12 Reference Temperature, C 42 Dta '' 12 Difference of the Device Temperature and the Ambient Temperature, C 43 Vge '' 9 Emitter Band-Gap Voltage, eV 44 Vgb '' 9 Base Band-Gap Voltage, eV 45 Vgc '' 9 Collector Band-Gap Voltage, eV 46 Vgj '' 9 Recombination E-B Junction Band-Gap Voltage, eV 47 Vi '' 9 Ionization Voltage Base Dope, V 48 Na '' -1 Maximum Base Dope Concentration 49 Er '' -1 Temperature Coefficient of Vlf and Vlr 50 Ab '' -1 Temperature Coefficient Resistivity Base 51 Aepi '' -1 Temperature Coefficient Resistivity of the Epilayer 52 Aex '' -1 Temperature Coefficient Resistivity of the Extrinsic Base 53 Ac '' -1 Temperature Coefficient Resistivity of the Buried Layer 54 Kf '' -1 Flicker Noise Coefficient Ideal Base Current 55 Kfn '' -1 Flicker Noise Coefficient Non-Ideal Base Current 56 Af '' -1 Flicker Noise Exponent 57 Iss '' -1 Base-Substrate Saturation Current, A/m^2 58 Iks '' -1 Knee Substrate Current, A/m^2 59 Cjs '' 4 C-S Zero-bias Junction Cap., F/m^2 60 Vds '' 9 C-S Diffusion Voltage, V 61 Ps '' -1 C-S Grading Coefficient 62 Vgs '' 9 Substrate Band-Gap Voltage, V 63 As '' -1 For Closed/Open Buried Layer 64 wVsubfwd '' 9 Substrate Junction Forward Bias (warning), V 65 wBvsub '' 9 Substrate Junction Reverse Breakdown Voltage (warning), V 66 wBvbe '' 9 Base-Emitter Reverse Breakdown Voltage (warning), V 67 wBvbc '' 9 Base-Collector Reverse Breakdown Voltage (warning), V 68 wVbcfwd '' 9 Base-Collector Forward Bias (warning), V 69 wIbmax '' 10 Maximum Base Current (warning), A 70 wIcmax '' 10 Maximum Collector Current (warning), A 71 wPmax '' 8 Maximum Power Dissipation (warning), W END_ELEMENT MGAP MGAP 4 1 Subst MSub1 -1 Substrate instance name 2 W 25.0mils 5 Conductor width 3 S 10.0mils 5 Length of gap (spacing) 4 Temp '' 12 Physical temperature 5 AutomaticWidth 'Disabled' -1 END_ELEMENT MICAP1 MICAP1 9 1 Subst MSub1 -1 Substrate instance name 2 W 5.0mils 5 Finger width 3 G 5.0mils 5 Gap between fingers 4 Ge 5.0mils 5 Gap at end of fingers 5 L 50.0mils 5 Length of overlapped region 6 Np 3 -1 Number of finger pairs 7 Wt 25.0mils 5 Width of the interconnect 8 Wf 25.0mils 5 Width of the feed line 9 Temp '' 12 Physical temperature END_ELEMENT MICAP2 MICAP2 8 1 Subst MSub1 -1 Substrate instance name 2 W 5.0mils 5 Finger width 3 G 5.0mils 5 Gap between fingers 4 Ge 5.0mils 5 Gap at end of fingers 5 L 50.0mils 5 Length of overlapped region 6 Np 3 -1 Number of finger pairs 7 Wt 25.0mils 5 Width of the interconnect 8 Temp '' 12 Physical temperature END_ELEMENT MICAP3 MICAP3 9 1 Subst MSub1 -1 Substrate instance name 2 W 5.0mils 5 Finger width 3 G 5.0mils 5 Gap between fingers 4 Ge 5.0mils 5 Gap at end of fingers 5 L 50.0mils 5 Length of overlapped region 6 Np 3 -1 Number of finger pairs 7 Wt 25.0mils 5 Width of the interconnect 8 Wf 25.0mils 5 Width of the feed line 9 Temp '' 12 Physical temperature END_ELEMENT MICAP4 MICAP4 8 1 Subst MSub1 -1 Substrate instance name 2 W 5.0mils 5 Finger width 3 G 5.0mils 5 Gap between fingers 4 Ge 5.0mils 5 Gap at end of fingers 5 L 50.0mils 5 Length of overlapped region 6 Np 3 -1 Number of finger pairs 7 Wt 25.0mils 5 Width of the interconnect 8 Temp '' 12 Physical temperature END_ELEMENT ML10CTL_V ML10CTL_V 31 1 Subst Subst1 -1 Substrate 2 Length 100mils 5 Length 3 W[1] 10mils 5 Width 4 S[1] 5mils 5 Width 5 W[2] 10mils 5 Width 6 S[2] 5mils 5 Width 7 W[3] 10mils 5 Width 8 S[3] 5mils 5 Width 9 W[4] 10mils 5 Width 10 S[4] 5mils 5 Width 11 W[5] 10mils 5 Width 12 S[5] 5mils 5 Width 13 W[6] 10mils 5 Width 14 S[6] 5mils 5 Width 15 W[7] 10mils 5 Width 16 S[7] 5mils 5 Width 17 W[8] 10mils 5 Width 18 S[8] 5mils 5 Width 19 W[9] 10mils 5 Width 20 S[9] 5mils 5 Width 21 W[10] 10mils 5 Width 22 Layer[1] 1 -2 Layer 1 23 Layer[2] 1 -2 Layer 2 24 Layer[3] 1 -2 Layer 3 25 Layer[4] 1 -2 Layer 4 26 Layer[5] 1 -2 Layer 5 27 Layer[6] 1 -2 Layer 6 28 Layer[7] 1 -2 Layer 7 29 Layer[8] 1 -2 Layer 8 30 Layer[9] 1 -2 Layer 9 31 Layer[10] 1 -2 Layer 10 END_ELEMENT ML16CTL_C ML16CTL_C 5 1 Subst Subst1 -1 Substrate 2 Length 100mils 5 Length 3 W 10mils 5 Width 4 S 5mils 5 Spacing 5 Layer 1 -2 Layer END_ELEMENT ML1CTL_C ML1CTL_C 4 1 Subst Subst1 -1 Substrate 2 Length 100mils 5 Length 3 W 10mils 5 Width 4 Layer 1 -2 Layer END_ELEMENT ML2CTL_C ML2CTL_C 5 1 Subst Subst1 -1 Substrate 2 Length 100mils 5 Length 3 W 10mils 5 Width 4 S 5mils 5 Spacing 5 Layer 1 -2 Layer END_ELEMENT ML2CTL_V ML2CTL_V 7 1 Subst Subst1 -1 Substrate 2 Length 100mils 5 Length 3 W[1] 10mils 5 Width 4 S[1] 5mils 5 Width 5 W[2] 10mils 5 Width 6 Layer[1] 1 -2 Layer 1 7 Layer[2] 1 -2 Layer 2 END_ELEMENT ML3CTL_C ML3CTL_C 5 1 Subst Subst1 -1 Substrate 2 Length 100mils 5 Length 3 W 10mils 5 Width 4 S 5mils 5 Spacing 5 Layer 1 -2 Layer END_ELEMENT ML3CTL_V ML3CTL_V 10 1 Subst Subst1 -1 Substrate 2 Length 100mils 5 Length 3 W[1] 10mils 5 Width 4 S[1] 5mils 5 Width 5 W[2] 10mils 5 Width 6 S[2] 5mils 5 Width 7 W[3] 10mils 5 Width 8 Layer[1] 1 -2 Layer 1 9 Layer[2] 1 -2 Layer 2 10 Layer[3] 1 -2 Layer 3 END_ELEMENT ML4CTL_C ML4CTL_C 5 1 Subst Subst1 -1 Substrate 2 Length 100mils 5 Length 3 W 10mils 5 Width 4 S 5mils 5 Spacing 5 Layer 1 -2 Layer END_ELEMENT ML4CTL_V ML4CTL_V 13 1 Subst Subst1 -1 Substrate 2 Length 100mils 5 Length 3 W[1] 10mils 5 Width 4 S[1] 5mils 5 Width 5 W[2] 10mils 5 Width 6 S[2] 5mils 5 Width 7 W[3] 10mils 5 Width 8 S[3] 5mils 5 Width 9 W[4] 10mils 5 Width 10 Layer[1] 1 -2 Layer 1 11 Layer[2] 1 -2 Layer 2 12 Layer[3] 1 -2 Layer 3 13 Layer[4] 1 -2 Layer 4 END_ELEMENT ML5CTL_C ML5CTL_C 5 1 Subst Subst1 -1 Substrate 2 Length 100mils 5 Length 3 W 10mils 5 Width 4 S 5mils 5 Spacing 5 Layer 1 -2 Layer END_ELEMENT ML5CTL_V ML5CTL_V 16 1 Subst Subst1 -1 Substrate 2 Length 100mils 5 Length 3 W[1] 10mils 5 Width 4 S[1] 5mils 5 Width 5 W[2] 10mils 5 Width 6 S[2] 5mils 5 Width 7 W[3] 10mils 5 Width 8 S[3] 5mils 5 Width 9 W[4] 10mils 5 Width 10 S[4] 5mils 5 Width 11 W[5] 5mils 5 Width 12 Layer[1] 1 -2 Layer 1 13 Layer[2] 1 -2 Layer 2 14 Layer[3] 1 -2 Layer 3 15 Layer[4] 1 -2 Layer 4 16 Layer[5] 1 -2 Layer 5 END_ELEMENT ML6CTL_C ML6CTL_C 5 1 Subst Subst1 -1 Substrate 2 Length 100mils 5 Length 3 W 10mils 5 Width 4 S 5mils 5 Spacing 5 Layer 1 -2 Layer END_ELEMENT ML6CTL_V ML6CTL_V 19 1 Subst Subst1 -1 Substrate 2 Length 100mils 5 Length 3 W[1] 10mils 5 Width 4 S[1] 5mils 5 Width 5 W[2] 10mils 5 Width 6 S[2] 5mils 5 Width 7 W[3] 10mils 5 Width 8 S[3] 5mils 5 Width 9 W[4] 10mils 5 Width 10 S[4] 5mils 5 Width 11 W[5] 10mils 5 Width 12 S[5] 5mils 5 Width 13 W[6] 10mils 5 Width 14 Layer[1] 1 -2 Layer 1 15 Layer[2] 1 -2 Layer 2 16 Layer[3] 1 -2 Layer 3 17 Layer[4] 1 -2 Layer 4 18 Layer[5] 1 -2 Layer 5 19 Layer[6] 1 -2 Layer 6 END_ELEMENT ML7CTL_C ML7CTL_C 5 1 Subst Subst1 -1 Substrate 2 Length 100mils 5 Length 3 W 10mils 5 Width 4 S 5mils 5 Spacing 5 Layer 1 -2 Layer END_ELEMENT ML7CTL_V ML7CTL_V 22 1 Subst Subst1 -1 Substrate 2 Length 100mils 5 Length 3 W[1] 10mils 5 Width 4 S[1] 5mils 5 Width 5 W[2] 10mils 5 Width 6 S[2] 10mils 5 Width 7 W[3] 10mils 5 Width 8 S[3] 5mils 5 Width 9 W[4] 10mils 5 Width 10 S[4] 5mils 5 Width 11 W[5] 10mils 5 Width 12 S[5] 5mils 5 Width 13 W[6] 10mils 5 Width 14 S[6] 5mils 5 Width 15 W[7] 10mils 5 Width 16 Layer[1] 1 -2 Layer 1 17 Layer[2] 1 -2 Layer 2 18 Layer[3] 1 -2 Layer 3 19 Layer[4] 1 -2 Layer 4 20 Layer[5] 1 -2 Layer 5 21 Layer[6] 1 -2 Layer 6 22 Layer[7] 1 -2 Layer 7 END_ELEMENT ML8CTL_C ML8CTL_C 5 1 Subst Subst1 -1 Substrate 2 Length 100mils 5 Length 3 W 10mils 5 Width 4 S 5mils 5 Spacing 5 Layer 1 -2 Layer END_ELEMENT ML8CTL_V ML8CTL_V 25 1 Subst Subst1 -1 Substrate 2 Length 100mils 5 Length 3 W[1] 10mils 5 Width 4 S[1] 5mils 5 Width 5 W[2] 10mils 5 Width 6 S[2] 5mils 5 Width 7 W[3] 10mils 5 Width 8 S[3] 5mils 5 Width 9 W[4] 10mils 5 Width 10 S[4] 5mils 5 Width 11 W[5] 10mils 5 Width 12 S[5] 5mils 5 Width 13 W[6] 10mils 5 Width 14 S[6] 5mils 5 Width 15 W[7] 10mils 5 Width 16 S[7] 5mils 5 Width 17 W[8] 10mils 5 Width 18 Layer[1] 1 -2 Layer 1 19 Layer[2] 1 -2 Layer 2 20 Layer[3] 1 -2 Layer 3 21 Layer[4] 1 -2 Layer 4 22 Layer[5] 1 -2 Layer 5 23 Layer[6] 1 -2 Layer 6 24 Layer[7] 1 -2 Layer 7 25 Layer[8] 1 -2 Layer 8 END_ELEMENT ML9CTL_V ML9CTL_V 28 1 Subst Subst1 -1 Substrate 2 Length 100mils 5 Length 3 W[1] 10mils 5 Width 4 S[1] 5mils 5 Width 5 W[2] 10mils 5 Width 6 S[2] 5mils 5 Width 7 W[3] 10mils 5 Width 8 S[3] 5mils 5 Width 9 W[4] 10mils 5 Width 10 S[4] 5mils 5 Width 11 W[5] 10mils 5 Width 12 S[5] 5mils 5 Width 13 W[6] 10mils 5 Width 14 S[6] 5mils 5 Width 15 W[7] 10mils 5 Width 16 S[7] 5mils 5 Width 17 W[8] 10mils 5 Width 18 S[8] 5mils 5 Width 19 W[9] 10mils 5 Width 20 Layer[1] 1 -2 Layer 1 21 Layer[2] 1 -2 Layer 2 22 Layer[3] 1 -2 Layer 3 23 Layer[4] 1 -2 Layer 4 24 Layer[5] 1 -2 Layer 5 25 Layer[6] 1 -2 Layer 6 26 Layer[7] 1 -2 Layer 7 27 Layer[8] 1 -2 Layer 8 28 Layer[9] 1 -2 Layer 9 END_ELEMENT MLACRNR1 MLACRNR1 4 1 Subst Subst1 -1 Substrate 2 W1 10mils 5 Width 3 W2 10mils 5 Width 4 Layer 1 -2 Layer END_ELEMENT MLACRNR16 MLACRNR16 6 1 Subst Subst1 -1 Substrate 2 W1 10mils 5 Width 3 S1 5mils 5 Width 4 W2 10mils 5 Width 5 S2 15mils 5 Width 6 Layer 1 -2 Layer END_ELEMENT MLACRNR2 MLACRNR2 6 1 Subst Subst1 -1 Substrate 2 W1 10mils 5 Width 3 S1 5mils 5 Width 4 W2 10mils 5 Width 5 S2 15mils 5 Width 6 Layer 1 -2 Layer END_ELEMENT MLACRNR3 MLACRNR3 6 1 Subst Subst1 -1 Substrate 2 W1 10mils 5 Width 3 S1 5mils 5 Width 4 W2 10mils 5 Width 5 S2 15mils 5 Width 6 Layer 1 -2 Layer END_ELEMENT MLACRNR4 MLACRNR4 6 1 Subst Subst1 -1 Substrate 2 W1 10mils 5 Width 3 S1 5mils 5 Width 4 W2 10mils 5 Width 5 S2 15mils 5 Width 6 Layer 1 -2 Layer END_ELEMENT MLACRNR5 MLACRNR5 6 1 Subst Subst1 -1 Substrate 2 W1 10mils 5 Width 3 S1 5mils 5 Width 4 W2 10mils 5 Width 5 S2 15mils 5 Width 6 Layer 1 -2 Layer END_ELEMENT MLACRNR6 MLACRNR6 6 1 Subst Subst1 -1 Substrate 2 W1 10mils 5 Width 3 S1 5mils 5 Width 4 W2 10mils 5 Width 5 S2 15mils 5 Width 6 Layer 1 -2 Layer END_ELEMENT MLACRNR7 MLACRNR7 6 1 Subst Subst1 -1 Substrate 2 W1 10mils 5 Width 3 S1 5mils 5 Width 4 W2 10mils 5 Width 5 S2 15mils 5 Width 6 Layer 1 -2 Layer END_ELEMENT MLACRNR8 MLACRNR8 6 1 Subst Subst1 -1 Substrate 2 W1 10mils 5 Width 3 S1 5mils 5 Width 4 W2 10mils 5 Width 5 S2 15mils 5 Width 6 Layer 1 -2 Layer END_ELEMENT MLANG MLANG 6 1 Subst MSub1 -1 Substrate instance name 2 W 10.0mils 5 Conductor width 3 S 10.0mils 5 Conductor spacing 4 L 100.0mils 5 Conductor length 5 Temp '' 12 Physical temperature 6 W1 25.0mils 5 (for Layout option) Width of transmission line that connect to pins 1,2,3,4 END_ELEMENT MLANG6 MLANG6 6 1 Subst MSub1 -1 Substrate instance name 2 W 10.0mils 5 Conductor width 3 S 10.0mils 5 Conductor spacing 4 L 100.0mils 5 Conductor length 5 Temp '' 12 Physical temperature 6 W1 25.0mils 5 (for Layout option) Width of transmission line that connect to pins 1,2,3,4 END_ELEMENT MLANG8 MLANG8 6 1 Subst MSub1 -1 Substrate instance name 2 W 10.0mils 5 Conductor width 3 S 10.0mils 5 Conductor spacing 4 L 100.0mils 5 Conductor length 5 Temp '' 12 Physical temperature 6 W1 25.0mils 5 (for Layout option) Width of transmission line that connect to pins 1,2,3,4 END_ELEMENT MLCLE MLCLE 4 1 Subst Subst1 -1 Substrate 2 DiamClear 15mils 5 Diameter of Clearance 3 DiamPad 5mils 5 Diameter of Pad 4 Layer 2 -2 Layer END_ELEMENT MLCRNR1 MLCRNR1 4 1 Subst Subst1 -1 Substrate 2 Angle 90deg 7 Angle 3 W 10mils 5 Width 4 Layer 1 -2 Layer END_ELEMENT MLCRNR16 MLCRNR16 5 1 Subst Subst1 -1 Substrate 2 Angle 90deg 7 Angle 3 W 10mils 5 Width 4 S 5mils 5 Spacing 5 Layer 1 -2 Layer END_ELEMENT MLCRNR2 MLCRNR2 5 1 Subst Subst1 -1 Substrate 2 Angle 90deg 7 Angle 3 W 10mils 5 Width 4 S 5mils 5 Spacing 5 Layer 1 -2 Layer END_ELEMENT MLCRNR3 MLCRNR3 5 1 Subst Subst1 -1 Substrate 2 Angle 90deg 7 Angle 3 W 10mils 5 Width 4 S 5mils 5 Spacing 5 Layer 1 -2 Layer END_ELEMENT MLCRNR4 MLCRNR4 5 1 Subst Subst1 -1 Substrate 2 Angle 90deg 7 Angle 3 W 10mils 5 Width 4 S 5mils 5 Spacing 5 Layer 1 -2 Layer END_ELEMENT MLCRNR5 MLCRNR5 5 1 Subst Subst1 -1 Substrate 2 Angle 90deg 7 Angle 3 W 10mils 5 Width 4 S 5mils 5 Spacing 5 Layer 1 -2 Layer END_ELEMENT MLCRNR6 MLCRNR6 5 1 Subst Subst1 -1 Substrate 2 Angle 90deg 7 Angle 3 W 10mils 5 Width 4 S 5mils 5 Spacing 5 Layer 1 -2 Layer END_ELEMENT MLCRNR7 MLCRNR7 5 1 Subst Subst1 -1 Substrate 2 Angle 90deg 7 Angle 3 W 10mils 5 Width 4 S 5mils 5 Spacing 5 Layer 1 -2 Layer END_ELEMENT MLCRNR8 MLCRNR8 5 1 Subst Subst1 -1 Substrate 2 Angle 90deg 7 Angle 3 W 10mils 5 Width 4 S 5mils 5 Spacing 5 Layer 1 -2 Layer END_ELEMENT MLCROSSOVER1 MLCROSSOVER1 5 1 Subst Subst1 -1 Substrate 2 W_Top 10mils 5 Width 3 W_Bottom 10mils 5 Width 4 LayerTop 1 -2 Layer 5 LayerBottom 2 -1 Layer END_ELEMENT MLCROSSOVER2 MLCROSSOVER2 7 1 Subst Subst1 -1 Substrate 2 W_Top 10mils 5 Width 3 W_Bottom 10mils 5 Width 4 S_Top 10mils 5 Width 5 S_Bottom 10mils 5 Width 6 LayerTop 1 -2 Layer 7 LayerBottom 2 -1 Layer END_ELEMENT MLCROSSOVER3 MLCROSSOVER3 7 1 Subst Subst1 -1 Substrate 2 W_Top 10mils 5 Width 3 W_Bottom 10mils 5 Width 4 S_Top 10mils 5 Width 5 S_Bottom 10mils 5 Width 6 LayerTop 1 -2 Layer 7 LayerBottom 2 -1 Layer END_ELEMENT MLCROSSOVER4 MLCROSSOVER4 7 1 Subst Subst1 -1 Substrate 2 W_Top 10mils 5 Width 3 W_Bottom 10mils 5 Width 4 S_Top 10mils 5 Width 5 S_Bottom 10mils 5 Width 6 LayerTop 1 -2 Layer 7 LayerBottom 2 -1 Layer END_ELEMENT MLCROSSOVER5 MLCROSSOVER5 7 1 Subst Subst1 -1 Substrate 2 W_Top 10mils 5 Width 3 W_Bottom 10mils 5 Width 4 S_Top 10mils 5 Width 5 S_Bottom 10mils 5 Width 6 LayerTop 1 -2 Layer 7 LayerBottom 2 -1 Layer END_ELEMENT MLCROSSOVER6 MLCROSSOVER6 7 1 Subst Subst1 -1 Substrate 2 W_Top 10mils 5 Width 3 W_Bottom 10mils 5 Width 4 S_Top 10mils 5 Width 5 S_Bottom 10mils 5 Width 6 LayerTop 1 -2 Layer 7 LayerBottom 2 -1 Layer END_ELEMENT MLCROSSOVER7 MLCROSSOVER7 7 1 Subst Subst1 -1 Substrate 2 W_Top 10mils 5 Width 3 W_Bottom 10mils 5 Width 4 S_Top 10mils 5 Width 5 S_Bottom 10mils 5 Width 6 LayerTop 1 -2 Layer 7 LayerBottom 2 -1 Layer END_ELEMENT MLCROSSOVER8 MLCROSSOVER8 7 1 Subst Subst1 -1 Substrate 2 W_Top 10mils 5 Width 3 W_Bottom 10mils 5 Width 4 S_Top 10mils 5 Width 5 S_Bottom 10mils 5 Width 6 LayerTop 1 -2 Layer 7 LayerBottom 2 -1 Layer END_ELEMENT MLEF MLEF 6 1 Subst MSub1 -1 Substrate instance name 2 W 25.0mils 5 Line width 3 L 100.0mils 5 Line length 4 Wall1 '' 5 Distance to 1st sidewall 5 Wall2 '' 5 Distance to 2nd sidewall 6 Temp '' 12 Physical temperature END_ELEMENT MLIN MLIN 6 1 Subst MSub1 -1 Substrate instance name 2 W 25.0mils 5 Line width 3 L 100.0mils 5 Line length 4 Wall1 '' 5 Distance to 1st sidewall 5 Wall2 '' 5 Distance to 2nd sidewall 6 Temp '' 12 Physical temperature END_ELEMENT MLJCROSS MLJCROSS 6 1 Subst Subst1 -1 Substrate 2 W1 10mils 5 Width 3 W2 10mils 5 Width 4 W3 10mils 5 Width 5 W4 10mils 5 Width 6 Layer 1 -2 Layer END_ELEMENT MLJGAP MLJGAP 4 1 Subst Subst1 -1 Substrate 2 G 10mils 5 Width 3 W 10mils 5 Width 4 Layer 1 -2 Layer END_ELEMENT MLJTEE MLJTEE 5 1 Subst Subst1 -1 Substrate 2 W1 10mils 5 Width 3 W2 10mils 5 Width 4 W3 10mils 5 Width 5 Layer 1 -2 Layer END_ELEMENT MLOC MLOC 6 1 Subst MSub1 -1 Substrate instance name 2 W 25.0mils 5 Line width 3 L 100.0mils 5 Line length 4 Wall1 '' 5 Distance to 1st sidewall 5 Wall2 '' 5 Distance to 2nd sidewall 6 Temp '' 12 Physical temperature END_ELEMENT MLOPENSTUB MLOPENSTUB 4 1 Subst Subst1 -1 Substrate 2 Length 100mils 5 Length 3 W 10mils 5 Width 4 Layer 1 -2 Layer END_ELEMENT MLRADIAL1 MLRADIAL1 6 1 Subst Subst1 -1 Substrate 2 X_Offset 100mils 5 Horizontal Offset 3 Y_Offset 0mils 5 VerticalOffset 4 W_Left 20mils 5 Width 5 W_Right 10mils 5 Width 6 Layer 1 -2 Layer END_ELEMENT MLRADIAL2 MLRADIAL2 8 1 Subst Subst1 -1 Substrate 2 X_Offset 100mils 5 Horizontal Offset 3 Y_Offset 0mils 5 VerticalOffset 4 W_Left 20mils 5 Width 5 W_Right 10mils 5 Width 6 S_Left 5mils 5 Width 7 S_Right 10mils 5 Width 8 Layer 1 -2 Layer END_ELEMENT MLRADIAL3 MLRADIAL3 8 1 Subst Subst1 -1 Substrate 2 X_Offset 100mils 5 Horizontal Offset 3 Y_Offset 0mils 5 VerticalOffset 4 W_Left 20mils 5 Width 5 W_Right 10mils 5 Width 6 S_Left 5mils 5 Width 7 S_Right 10mils 5 Width 8 Layer 1 -2 Layer END_ELEMENT MLRADIAL4 MLRADIAL4 8 1 Subst Subst1 -1 Substrate 2 X_Offset 100mils 5 Horizontal Offset 3 Y_Offset 0mils 5 VerticalOffset 4 W_Left 20mils 5 Width 5 W_Right 10mils 5 Width 6 S_Left 5mils 5 Width 7 S_Right 10mils 5 Width 8 Layer 1 -2 Layer END_ELEMENT MLRADIAL5 MLRADIAL5 8 1 Subst Subst1 -1 Substrate 2 X_Offset 100mils 5 Horizontal Offset 3 Y_Offset 0mils 5 VerticalOffset 4 W_Left 20mils 5 Width 5 W_Right 10mils 5 Width 6 S_Left 5mils 5 Width 7 S_Right 10mils 5 Width 8 Layer 1 -2 Layer END_ELEMENT MLSC MLSC 6 1 Subst MSub1 -1 Substrate instance name 2 W 25.0mils 5 Line width 3 L 100.0mils 5 Line length 4 Wall1 '' 5 Distance to 1st sidewall 5 Wall2 '' 5 Distance to 2nd sidewall 6 Temp '' 12 Physical temperature END_ELEMENT MLSLANTED1 MLSLANTED1 5 1 Subst Subst1 -1 Substrate 2 X_Offset 100mils 5 Horizontal Offset 3 Y_Offset 100mils 5 VerticalOffset 4 W 10mils 5 Width 5 Layer 1 -2 Layer END_ELEMENT MLSLANTED16 MLSLANTED16 6 1 Subst Subst1 -1 Substrate 2 X_Offset 100mils 5 Horizontal Offset 3 Y_Offset 100mils 5 VerticalOffset 4 W 10mils 5 Width 5 S 2mils 5 Spacing 6 Layer 1 -2 Layer END_ELEMENT MLSLANTED2 MLSLANTED2 6 1 Subst Subst1 -1 Substrate 2 X_Offset 100mils 5 Horizontal Offset 3 Y_Offset 100mils 5 VerticalOffset 4 W 10mils 5 Width 5 S 2mils 5 Spacing 6 Layer 1 -2 Layer END_ELEMENT MLSLANTED3 MLSLANTED3 6 1 Subst Subst1 -1 Substrate 2 X_Offset 100mils 5 Horizontal Offset 3 Y_Offset 100mils 5 VerticalOffset 4 W 10mils 5 Width 5 S 2mils 5 Spacing 6 Layer 1 -2 Layer END_ELEMENT MLSLANTED4 MLSLANTED4 6 1 Subst Subst1 -1 Substrate 2 X_Offset 100mils 5 Horizontal Offset 3 Y_Offset 100mils 5 VerticalOffset 4 W 10mils 5 Width 5 S 2mils 5 Spacing 6 Layer 1 -2 Layer END_ELEMENT MLSLANTED5 MLSLANTED5 6 1 Subst Subst1 -1 Substrate 2 X_Offset 100mils 5 Horizontal Offset 3 Y_Offset 100mils 5 VerticalOffset 4 W 10mils 5 Width 5 S 2mils 5 Spacing 6 Layer 1 -2 Layer END_ELEMENT MLSLANTED6 MLSLANTED6 6 1 Subst Subst1 -1 Substrate 2 X_Offset 100mils 5 Horizontal Offset 3 Y_Offset 100mils 5 VerticalOffset 4 W 10mils 5 Width 5 S 2mils 5 Spacing 6 Layer 1 -2 Layer END_ELEMENT MLSLANTED7 MLSLANTED7 6 1 Subst Subst1 -1 Substrate 2 X_Offset 100mils 5 Horizontal Offset 3 Y_Offset 100mils 5 VerticalOffset 4 W 10mils 5 Width 5 S 2mils 5 Spacing 6 Layer 1 -2 Layer END_ELEMENT MLSLANTED8 MLSLANTED8 6 1 Subst Subst1 -1 Substrate 2 X_Offset 100mils 5 Horizontal Offset 3 Y_Offset 100mils 5 VerticalOffset 4 W 10mils 5 Width 5 S 2mils 5 Spacing 6 Layer 1 -2 Layer END_ELEMENT MLSUBSTRATE10 MLSUBSTRATE10 67 1 Er[1] 4.5 -1 Dielectric Constant 2 H[1] 10mils 5 Height of Substrate 3 TanD[1] 0 -1 Dielectric Loss Tangent 4 T[1] 0mils 5 Thickness 5 Cond[1] 1.0E+306 -1 Conductivity 6 Er[2] 4.5 -1 Dielectric Constant 7 H[2] 10mils 5 Height of Substrate 8 TanD[2] 0 -1 Dielectric Loss Tangent 9 T[2] 0mils 5 Thickness 10 Cond[2] 1.0E+306 -1 Conductivity 11 Er[3] 4.5 -1 Dielectric Constant 12 H[3] 10mils 5 Height of Substrate 13 TanD[3] 0 -1 Dielectric Loss Tangent 14 T[3] 0mils 5 Thickness 15 Cond[3] 1.0E+306 -1 Conductivity 16 Er[4] 4.5 -1 Dielectric Constant 17 H[4] 10mils 5 Height of Substrate 18 TanD[4] 0 -1 Dielectric Loss Tangent 19 T[4] 0mils 5 Thickness 20 Cond[4] 1.0E+306 -1 Conductivity 21 Er[5] 4.5 -1 Dielectric Constant 22 H[5] 10mils 5 Height of Substrate 23 TanD[5] 0 -1 Dielectric Loss Tangent 24 T[5] 0mils 5 Thickness 25 Cond[5] 1.0E+306 -1 Conductivity 26 Er[6] 4.5 -1 Dielectric Constant 27 H[6] 10mils 5 Height of Substrate 28 TanD[6] 0 -1 Dielectric Loss Tangent 29 T[6] 0mils 5 Thickness 30 Cond[6] 1.0E+306 -1 Conductivity 31 Er[7] 4.5 -1 Dielectric Constant 32 H[7] 10mils 5 Height of Substrate 33 TanD[7] 0 -1 Dielectric Loss Tangent 34 T[7] 0mils 5 Thickness 35 Cond[7] 1.0E+306 -1 Conductivity 36 Er[8] 4.5 -1 Dielectric Constant 37 H[8] 10mils 5 Height of Substrate 38 TanD[8] 0 -1 Dielectric Loss Tangent 39 T[8] 0mils 5 Thickness 40 Cond[8] 1.0E+306 -1 Conductivity 41 Er[9] 4.5 -1 Dielectric Constant 42 H[9] 10mils 5 Height of Substrate 43 TanD[9] 0 -1 Dielectric Loss Tangent 44 T[9] 0mils 5 Thickness 45 Cond[9] 1.0E+306 -1 Conductivity 46 T[10] 0mils 5 Thickness 47 Cond[10] 1.0E+306 -1 Conductivity 48 LayerType[1] BLANK -2 Metal Definition 49 LayerType[2] SIGNAL -2 Metal Definition 50 LayerType[3] GROUND -2 Metal Definition 51 LayerType[4] POWER -2 Metal Definition 52 LayerType[5] POWER -2 Metal Definition 53 LayerType[6] POWER -2 Metal Definition 54 LayerType[7] POWER -2 Metal Definition 55 LayerType[8] POWER -2 Metal Definition 56 LayerType[9] POWER -2 Metal Definition 57 LayerType[10] POWER -2 Metal Definition 58 LayerName[1] smt_cond -1 (for Layout option) Layer to which cond is mapped 59 LayerName[2] smt_cond -1 (for Layout option) Layer to which cond is mapped 60 LayerName[3] smt_cond -1 (for Layout option) Layer to which cond is mapped 61 LayerName[4] smt_cond -1 (for Layout option) Layer to which cond is mapped 62 LayerName[5] smt_cond -1 (for Layout option) Layer to which cond is mapped 63 LayerName[6] smt_cond -1 (for Layout option) Layer to which cond is mapped 64 LayerName[7] smt_cond -1 (for Layout option) Layer to which cond is mapped 65 LayerName[8] smt_cond -1 (for Layout option) Layer to which cond is mapped 66 LayerName[9] smt_cond -1 (for Layout option) Layer to which cond is mapped 67 LayerName[10] smt_cond -1 (for Layout option) Layer to which cond is mapped END_ELEMENT MLSUBSTRATE12 MLSUBSTRATE12 81 1 Er[1] 4.5 -1 Dielectric Constant 2 H[1] 10mils 5 Height of Substrate 3 TanD[1] 0 -1 Dielectric Loss Tangent 4 T[1] 0mils 5 Thickness 5 Cond[1] 1.0E+306 -1 Conductivity 6 Er[2] 4.5 -1 Dielectric Constant 7 H[2] 10mils 5 Height of Substrate 8 TanD[2] 0 -1 Dielectric Loss Tangent 9 T[2] 0mils 5 Thickness 10 Cond[2] 1.0E+306 -1 Conductivity 11 Er[3] 4.5 -1 Dielectric Constant 12 H[3] 10mils 5 Height of Substrate 13 TanD[3] 0 -1 Dielectric Loss Tangent 14 T[3] 0mils 5 Thickness 15 Cond[3] 1.0E+306 -1 Conductivity 16 Er[4] 4.5 -1 Dielectric Constant 17 H[4] 10mils 5 Height of Substrate 18 TanD[4] 0 -1 Dielectric Loss Tangent 19 T[4] 0mils 5 Thickness 20 Cond[4] 1.0E+306 -1 Conductivity 21 Er[5] 4.5 -1 Dielectric Constant 22 H[5] 10mils 5 Height of Substrate 23 TanD[5] 0 -1 Dielectric Loss Tangent 24 T[5] 0mils 5 Thickness 25 Cond[5] 1.0E+306 -1 Conductivity 26 Er[6] 4.5 -1 Dielectric Constant 27 H[6] 10mils 5 Height of Substrate 28 TanD[6] 0 -1 Dielectric Loss Tangent 29 T[6] 0mils 5 Thickness 30 Cond[6] 1.0E+306 -1 Conductivity 31 Er[7] 4.5 -1 Dielectric Constant 32 H[7] 10mils 5 Height of Substrate 33 TanD[7] 0 -1 Dielectric Loss Tangent 34 T[7] 0mils 5 Thickness 35 Cond[7] 1.0E+306 -1 Conductivity 36 Er[8] 4.5 -1 Dielectric Constant 37 H[8] 10mils 5 Height of Substrate 38 TanD[8] 0 -1 Dielectric Loss Tangent 39 T[8] 0mils 5 Thickness 40 Cond[8] 1.0E+306 -1 Conductivity 41 Er[9] 4.5 -1 Dielectric Constant 42 H[9] 10mils 5 Height of Substrate 43 TanD[9] 0 -1 Dielectric Loss Tangent 44 T[9] 0mils 5 Thickness 45 Cond[9] 1.0E+306 -1 Conductivity 46 Er[10] 4.5 -1 Dielectric Constant 47 H[10] 10mils 5 Height of Substrate 48 TanD[10] 0 -1 Dielectric Loss Tangent 49 T[10] 0mils 5 Thickness 50 Cond[10] 1.0E+306 -1 Conductivity 51 Er[11] 4.5 -1 Dielectric Constant 52 H[11] 10mils 5 Height of Substrate 53 TanD[11] 0 -1 Dielectric Loss Tangent 54 T[11] 0mils 5 Thickness 55 Cond[11] 1.0E+306 -1 Conductivity 56 T[12] 0mils 5 Thickness 57 Cond[12] 1.0E+306 -1 Conductivity 58 LayerType[1] BLANK -2 Metal Definition 59 LayerType[2] SIGNAL -2 Metal Definition 60 LayerType[3] GROUND -2 Metal Definition 61 LayerType[4] POWER -2 Metal Definition 62 LayerType[5] POWER -2 Metal Definition 63 LayerType[6] POWER -2 Metal Definition 64 LayerType[7] POWER -2 Metal Definition 65 LayerType[8] POWER -2 Metal Definition 66 LayerType[9] POWER -2 Metal Definition 67 LayerType[10] POWER -2 Metal Definition 68 LayerType[11] POWER -2 Metal Definition 69 LayerType[12] POWER -2 Metal Definition 70 LayerName[1] smt_cond -1 (for Layout option) Layer to which cond is mapped 71 LayerName[2] smt_cond -1 (for Layout option) Layer to which cond is mapped 72 LayerName[3] smt_cond -1 (for Layout option) Layer to which cond is mapped 73 LayerName[4] smt_cond -1 (for Layout option) Layer to which cond is mapped 74 LayerName[5] smt_cond -1 (for Layout option) Layer to which cond is mapped 75 LayerName[6] smt_cond -1 (for Layout option) Layer to which cond is mapped 76 LayerName[7] smt_cond -1 (for Layout option) Layer to which cond is mapped 77 LayerName[8] smt_cond -1 (for Layout option) Layer to which cond is mapped 78 LayerName[9] smt_cond -1 (for Layout option) Layer to which cond is mapped 79 LayerName[10] smt_cond -1 (for Layout option) Layer to which cond is mapped 80 LayerName[11] smt_cond -1 (for Layout option) Layer to which cond is mapped 81 LayerName[12] smt_cond -1 (for Layout option) Layer to which cond is mapped END_ELEMENT MLSUBSTRATE14 MLSUBSTRATE14 95 1 Er[1] 4.5 -1 Dielectric Constant 2 H[1] 10mils 5 Height of Substrate 3 TanD[1] 0 -1 Dielectric Loss Tangent 4 T[1] 0mils 5 Thickness 5 Cond[1] 1.0E+306 -1 Conductivity 6 Er[2] 4.5 -1 Dielectric Constant 7 H[2] 10mils 5 Height of Substrate 8 TanD[2] 0 -1 Dielectric Loss Tangent 9 T[2] 0mils 5 Thickness 10 Cond[2] 1.0E+306 -1 Conductivity 11 Er[3] 4.5 -1 Dielectric Constant 12 H[3] 10mils 5 Height of Substrate 13 TanD[3] 0 -1 Dielectric Loss Tangent 14 T[3] 0mils 5 Thickness 15 Cond[3] 1.0E+306 -1 Conductivity 16 Er[4] 4.5 -1 Dielectric Constant 17 H[4] 10mils 5 Height of Substrate 18 TanD[4] 0 -1 Dielectric Loss Tangent 19 T[4] 0mils 5 Thickness 20 Cond[4] 1.0E+306 -1 Conductivity 21 Er[5] 4.5 -1 Dielectric Constant 22 H[5] 10mils 5 Height of Substrate 23 TanD[5] 0 -1 Dielectric Loss Tangent 24 T[5] 0mils 5 Thickness 25 Cond[5] 1.0E+306 -1 Conductivity 26 Er[6] 4.5 -1 Dielectric Constant 27 H[6] 10mils 5 Height of Substrate 28 TanD[6] 0 -1 Dielectric Loss Tangent 29 T[6] 0mils 5 Thickness 30 Cond[6] 1.0E+306 -1 Conductivity 31 Er[7] 4.5 -1 Dielectric Constant 32 H[7] 10mils 5 Height of Substrate 33 TanD[7] 0 -1 Dielectric Loss Tangent 34 T[7] 0mils 5 Thickness 35 Cond[7] 1.0E+306 -1 Conductivity 36 Er[8] 4.5 -1 Dielectric Constant 37 H[8] 10mils 5 Height of Substrate 38 TanD[8] 0 -1 Dielectric Loss Tangent 39 T[8] 0mils 5 Thickness 40 Cond[8] 1.0E+306 -1 Conductivity 41 Er[9] 4.5 -1 Dielectric Constant 42 H[9] 10mils 5 Height of Substrate 43 TanD[9] 0 -1 Dielectric Loss Tangent 44 T[9] 0mils 5 Thickness 45 Cond[9] 1.0E+306 -1 Conductivity 46 Er[10] 4.5 -1 Dielectric Constant 47 H[10] 10mils 5 Height of Substrate 48 TanD[10] 0 -1 Dielectric Loss Tangent 49 T[10] 0mils 5 Thickness 50 Cond[10] 1.0E+306 -1 Conductivity 51 Er[11] 4.5 -1 Dielectric Constant 52 H[11] 10mils 5 Height of Substrate 53 TanD[11] 0 -1 Dielectric Loss Tangent 54 T[11] 0mils 5 Thickness 55 Cond[11] 1.0E+306 -1 Conductivity 56 Er[12] 4.5 -1 Dielectric Constant 57 H[12] 10mils 5 Height of Substrate 58 TanD[12] 0 -1 Dielectric Loss Tangent 59 T[12] 0mils 5 Thickness 60 Cond[12] 1.0E+306 -1 Conductivity 61 Er[13] 4.5 -1 Dielectric Constant 62 H[13] 10mils 5 Height of Substrate 63 TanD[13] 0 -1 Dielectric Loss Tangent 64 T[13] 0mils 5 Thickness 65 Cond[13] 1.0E+306 -1 Conductivity 66 T[14] 0mils 5 Thickness 67 Cond[14] 1.0E+306 -2 Conductivity 68 LayerType[1] BLANK -2 Metal Definition 69 LayerType[2] SIGNAL -2 Metal Definition 70 LayerType[3] GROUND -2 Metal Definition 71 LayerType[4] POWER -2 Metal Definition 72 LayerType[5] POWER -2 Metal Definition 73 LayerType[6] POWER -2 Metal Definition 74 LayerType[7] POWER -2 Metal Definition 75 LayerType[8] POWER -2 Metal Definition 76 LayerType[9] POWER -2 Metal Definition 77 LayerType[10] POWER -2 Metal Definition 78 LayerType[11] POWER -2 Metal Definition 79 LayerType[12] POWER -2 Metal Definition 80 LayerType[13] POWER -2 Metal Definition 81 LayerType[14] POWER -2 Metal Definition 82 LayerName[1] smt_cond -1 (for Layout option) Layer to which cond is mapped 83 LayerName[2] smt_cond -1 (for Layout option) Layer to which cond is mapped 84 LayerName[3] smt_cond -1 (for Layout option) Layer to which cond is mapped 85 LayerName[4] smt_cond -1 (for Layout option) Layer to which cond is mapped 86 LayerName[5] smt_cond -1 (for Layout option) Layer to which cond is mapped 87 LayerName[6] smt_cond -1 (for Layout option) Layer to which cond is mapped 88 LayerName[7] smt_cond -1 (for Layout option) Layer to which cond is mapped 89 LayerName[8] smt_cond -1 (for Layout option) Layer to which cond is mapped 90 LayerName[9] smt_cond -1 (for Layout option) Layer to which cond is mapped 91 LayerName[10] smt_cond -1 (for Layout option) Layer to which cond is mapped 92 LayerName[11] smt_cond -1 (for Layout option) Layer to which cond is mapped 93 LayerName[12] smt_cond -1 (for Layout option) Layer to which cond is mapped 94 LayerName[13] smt_cond -1 (for Layout option) Layer to which cond is mapped 95 LayerName[14] smt_cond -1 (for Layout option) Layer to which cond is mapped END_ELEMENT MLSUBSTRATE16 MLSUBSTRATE16 109 1 Er[1] 4.5 -1 Dielectric Constant 2 H[1] 10mils 5 Height of Substrate 3 TanD[1] 0 -1 Dielectric Loss Tangent 4 T[1] 0mils 5 Thickness 5 Cond[1] 1.0E+306 -1 Conductivity 6 Er[2] 4.5 -1 Dielectric Constant 7 H[2] 10mils 5 Height of Substrate 8 TanD[2] 0 -1 Dielectric Loss Tangent 9 T[2] 0mils 5 Thickness 10 Cond[2] 1.0E+306 -1 Conductivity 11 Er[3] 4.5 -1 Dielectric Constant 12 H[3] 10mils 5 Height of Substrate 13 TanD[3] 0 -1 Dielectric Loss Tangent 14 T[3] 0mils 5 Thickness 15 Cond[3] 1.0E+306 -1 Conductivity 16 Er[4] 4.5 -1 Dielectric Constant 17 H[4] 10mils 5 Height of Substrate 18 TanD[4] 0 -1 Dielectric Loss Tangent 19 T[4] 0mils 5 Thickness 20 Cond[4] 1.0E+306 -1 Conductivity 21 Er[5] 4.5 -1 Dielectric Constant 22 H[5] 10mils 5 Height of Substrate 23 TanD[5] 0 -1 Dielectric Loss Tangent 24 T[5] 0mils 5 Thickness 25 Cond[5] 1.0E+306 -1 Conductivity 26 Er[6] 4.5 -1 Dielectric Constant 27 H[6] 10mils 5 Height of Substrate 28 TanD[6] 0 -1 Dielectric Loss Tangent 29 T[6] 0mils 5 Thickness 30 Cond[6] 1.0E+306 -1 Conductivity 31 Er[7] 4.5 -1 Dielectric Constant 32 H[7] 10mils 5 Height of Substrate 33 TanD[7] 0 -1 Dielectric Loss Tangent 34 T[7] 0mils 5 Thickness 35 Cond[7] 1.0E+306 -1 Conductivity 36 Er[8] 4.5 -1 Dielectric Constant 37 H[8] 10mils 5 Height of Substrate 38 TanD[8] 0 -1 Dielectric Loss Tangent 39 T[8] 0mils 5 Thickness 40 Cond[8] 1.0E+306 -1 Conductivity 41 Er[9] 4.5 -1 Dielectric Constant 42 H[9] 10mils 5 Height of Substrate 43 TanD[9] 0 -1 Dielectric Loss Tangent 44 T[9] 0mils 5 Thickness 45 Cond[9] 1.0E+306 -1 Conductivity 46 Er[10] 4.5 -1 Dielectric Constant 47 H[10] 10mils 5 Height of Substrate 48 TanD[10] 0 -1 Dielectric Loss Tangent 49 T[10] 0mils 5 Thickness 50 Cond[10] 1.0E+306 -1 Conductivity 51 Er[11] 4.5 -1 Dielectric Constant 52 H[11] 10mils 5 Height of Substrate 53 TanD[11] 0 -1 Dielectric Loss Tangent 54 T[11] 0mils 5 Thickness 55 Cond[11] 1.0E+306 -1 Conductivity 56 Er[12] 4.5 -1 Dielectric Constant 57 H[12] 10mils 5 Height of Substrate 58 TanD[12] 0 -1 Dielectric Loss Tangent 59 T[12] 0mils 5 Thickness 60 Cond[12] 1.0E+306 -1 Conductivity 61 Er[13] 4.5 -1 Dielectric Constant 62 H[13] 10mils 5 Height of Substrate 63 TanD[13] 0 -1 Dielectric Loss Tangent 64 T[13] 0mils 5 Thickness 65 Cond[13] 1.0E+306 -1 Conductivity 66 Er[14] 4.5 -1 Dielectric Constant 67 H[14] 10mils 5 Height of Substrate 68 TanD[14] 0 -1 Dielectric Loss Tangent 69 T[14] 0mils 5 Thickness 70 Cond[14] 1.0E+306 -1 Conductivity 71 Er[15] 4.5 -1 Dielectric Constant 72 H[15] 10mils 5 Height of Substrate 73 TanD[15] 0 -1 Dielectric Loss Tangent 74 T[15] 0mils 5 Thickness 75 Cond[15] 1.0E+306 -1 Conductivity 76 T[16] 0mils 5 Thickness 77 Cond[16] 1.0E+306 -1 Conductivity 78 LayerType[1] BLANK -2 Metal Definition 79 LayerType[2] SIGNAL -2 Metal Definition 80 LayerType[3] GROUND -2 Metal Definition 81 LayerType[4] POWER -2 Metal Definition 82 LayerType[5] POWER -2 Metal Definition 83 LayerType[6] POWER -2 Metal Definition 84 LayerType[7] POWER -2 Metal Definition 85 LayerType[8] POWER -2 Metal Definition 86 LayerType[9] POWER -2 Metal Definition 87 LayerType[10] POWER -2 Metal Definition 88 LayerType[11] POWER -2 Metal Definition 89 LayerType[12] POWER -2 Metal Definition 90 LayerType[13] POWER -2 Metal Definition 91 LayerType[14] POWER -2 Metal Definition 92 LayerType[15] POWER -2 Metal Definition 93 LayerType[16] POWER -2 Metal Definition 94 LayerName[1] smt_cond -1 (for Layout option) Layer to which cond is mapped 95 LayerName[2] smt_cond -1 (for Layout option) Layer to which cond is mapped 96 LayerName[3] smt_cond -1 (for Layout option) Layer to which cond is mapped 97 LayerName[4] smt_cond -1 (for Layout option) Layer to which cond is mapped 98 LayerName[5] smt_cond -1 (for Layout option) Layer to which cond is mapped 99 LayerName[6] smt_cond -1 (for Layout option) Layer to which cond is mapped 100 LayerName[7] smt_cond -1 (for Layout option) Layer to which cond is mapped 101 LayerName[8] smt_cond -1 (for Layout option) Layer to which cond is mapped 102 LayerName[9] smt_cond -1 (for Layout option) Layer to which cond is mapped 103 LayerName[10] smt_cond -1 (for Layout option) Layer to which cond is mapped 104 LayerName[11] smt_cond -1 (for Layout option) Layer to which cond is mapped 105 LayerName[12] smt_cond -1 (for Layout option) Layer to which cond is mapped 106 LayerName[13] smt_cond -1 (for Layout option) Layer to which cond is mapped 107 LayerName[14] smt_cond -1 (for Layout option) Layer to which cond is mapped 108 LayerName[15] smt_cond -1 (for Layout option) Layer to which cond is mapped 109 LayerName[16] smt_cond -1 (for Layout option) Layer to which cond is mapped END_ELEMENT MLSUBSTRATE32 MLSUBSTRATE32 109 1 Er[1] 4.5 -1 Dielectric Constant 2 H[1] 10mils 5 Height of Substrate 3 TanD[1] 0 -1 Dielectric Loss Tangent 4 T[1] 0mils 5 Thickness 5 Cond[1] 1.0E+306 -1 Conductivity 6 Er[2] 4.5 -1 Dielectric Constant 7 H[2] 10mils 5 Height of Substrate 8 TanD[2] 0 -1 Dielectric Loss Tangent 9 T[2] 0mils 5 Thickness 10 Cond[2] 1.0E+306 -1 Conductivity 11 Er[3] 4.5 -1 Dielectric Constant 12 H[3] 10mils 5 Height of Substrate 13 TanD[3] 0 -1 Dielectric Loss Tangent 14 T[3] 0mils 5 Thickness 15 Cond[3] 1.0E+306 -1 Conductivity 16 Er[4] 4.5 -1 Dielectric Constant 17 H[4] 10mils 5 Height of Substrate 18 TanD[4] 0 -1 Dielectric Loss Tangent 19 T[4] 0mils 5 Thickness 20 Cond[4] 1.0E+306 -1 Conductivity 21 Er[5] 4.5 -1 Dielectric Constant 22 H[5] 10mils 5 Height of Substrate 23 TanD[5] 0 -1 Dielectric Loss Tangent 24 T[5] 0mils 5 Thickness 25 Cond[5] 1.0E+306 -1 Conductivity 26 Er[6] 4.5 -1 Dielectric Constant 27 H[6] 10mils 5 Height of Substrate 28 TanD[6] 0 -1 Dielectric Loss Tangent 29 T[6] 0mils 5 Thickness 30 Cond[6] 1.0E+306 -1 Conductivity 31 Er[7] 4.5 -1 Dielectric Constant 32 H[7] 10mils 5 Height of Substrate 33 TanD[7] 0 -1 Dielectric Loss Tangent 34 T[7] 0mils 5 Thickness 35 Cond[7] 1.0E+306 -1 Conductivity 36 Er[8] 4.5 -1 Dielectric Constant 37 H[8] 10mils 5 Height of Substrate 38 TanD[8] 0 -1 Dielectric Loss Tangent 39 T[8] 0mils 5 Thickness 40 Cond[8] 1.0E+306 -1 Conductivity 41 Er[9] 4.5 -1 Dielectric Constant 42 H[9] 10mils 5 Height of Substrate 43 TanD[9] 0 -1 Dielectric Loss Tangent 44 T[9] 0mils 5 Thickness 45 Cond[9] 1.0E+306 -1 Conductivity 46 Er[10] 4.5 -1 Dielectric Constant 47 H[10] 10mils 5 Height of Substrate 48 TanD[10] 0 -1 Dielectric Loss Tangent 49 T[10] 0mils 5 Thickness 50 Cond[10] 1.0E+306 -1 Conductivity 51 Er[11] 4.5 -1 Dielectric Constant 52 H[11] 10mils 5 Height of Substrate 53 TanD[11] 0 -1 Dielectric Loss Tangent 54 T[11] 0mils 5 Thickness 55 Cond[11] 1.0E+306 -1 Conductivity 56 Er[12] 4.5 -1 Dielectric Constant 57 H[12] 10mils 5 Height of Substrate 58 TanD[12] 0 -1 Dielectric Loss Tangent 59 T[12] 0mils 5 Thickness 60 Cond[12] 1.0E+306 -1 Conductivity 61 Er[13] 4.5 -1 Dielectric Constant 62 H[13] 10mils 5 Height of Substrate 63 TanD[13] 0 -1 Dielectric Loss Tangent 64 T[13] 0mils 5 Thickness 65 Cond[13] 1.0E+306 -1 Conductivity 66 Er[14] 4.5 -1 Dielectric Constant 67 H[14] 10mils 5 Height of Substrate 68 TanD[14] 0 -1 Dielectric Loss Tangent 69 T[14] 0mils 5 Thickness 70 Cond[14] 1.0E+306 -1 Conductivity 71 Er[15] 4.5 -1 Dielectric Constant 72 H[15] 10mils 5 Height of Substrate 73 TanD[15] 0 -1 Dielectric Loss Tangent 74 T[15] 0mils 5 Thickness 75 Cond[15] 1.0E+306 -1 Conductivity 76 T[16] 0mils 5 Thickness 77 Cond[16] 1.0E+306 -1 Conductivity 78 LayerType[1] BLANK -2 Metal Definition 79 LayerType[2] SIGNAL -2 Metal Definition 80 LayerType[3] GROUND -2 Metal Definition 81 LayerType[4] POWER -2 Metal Definition 82 LayerType[5] POWER -2 Metal Definition 83 LayerType[6] POWER -2 Metal Definition 84 LayerType[7] POWER -2 Metal Definition 85 LayerType[8] POWER -2 Metal Definition 86 LayerType[9] POWER -2 Metal Definition 87 LayerType[10] POWER -2 Metal Definition 88 LayerType[11] POWER -2 Metal Definition 89 LayerType[12] POWER -2 Metal Definition 90 LayerType[13] POWER -2 Metal Definition 91 LayerType[14] POWER -2 Metal Definition 92 LayerType[15] POWER -2 Metal Definition 93 LayerType[16] POWER -2 Metal Definition 94 LayerName[1] smt_cond -1 (for Layout option) Layer to which cond is mapped 95 LayerName[2] smt_cond -1 (for Layout option) Layer to which cond is mapped 96 LayerName[3] smt_cond -1 (for Layout option) Layer to which cond is mapped 97 LayerName[4] smt_cond -1 (for Layout option) Layer to which cond is mapped 98 LayerName[5] smt_cond -1 (for Layout option) Layer to which cond is mapped 99 LayerName[6] smt_cond -1 (for Layout option) Layer to which cond is mapped 100 LayerName[7] smt_cond -1 (for Layout option) Layer to which cond is mapped 101 LayerName[8] smt_cond -1 (for Layout option) Layer to which cond is mapped 102 LayerName[9] smt_cond -1 (for Layout option) Layer to which cond is mapped 103 LayerName[10] smt_cond -1 (for Layout option) Layer to which cond is mapped 104 LayerName[11] smt_cond -1 (for Layout option) Layer to which cond is mapped 105 LayerName[12] smt_cond -1 (for Layout option) Layer to which cond is mapped 106 LayerName[13] smt_cond -1 (for Layout option) Layer to which cond is mapped 107 LayerName[14] smt_cond -1 (for Layout option) Layer to which cond is mapped 108 LayerName[15] smt_cond -1 (for Layout option) Layer to which cond is mapped 109 LayerName[16] smt_cond -1 (for Layout option) Layer to which cond is mapped END_ELEMENT MLSUBSTRATE40 MLSUBSTRATE40 109 1 Er[1] 4.5 -1 Dielectric Constant 2 H[1] 10mils 5 Height of Substrate 3 TanD[1] 0 -1 Dielectric Loss Tangent 4 T[1] 0mils 5 Thickness 5 Cond[1] 1.0E+306 -1 Conductivity 6 Er[2] 4.5 -1 Dielectric Constant 7 H[2] 10mils 5 Height of Substrate 8 TanD[2] 0 -1 Dielectric Loss Tangent 9 T[2] 0mils 5 Thickness 10 Cond[2] 1.0E+306 -1 Conductivity 11 Er[3] 4.5 -1 Dielectric Constant 12 H[3] 10mils 5 Height of Substrate 13 TanD[3] 0 -1 Dielectric Loss Tangent 14 T[3] 0mils 5 Thickness 15 Cond[3] 1.0E+306 -1 Conductivity 16 Er[4] 4.5 -1 Dielectric Constant 17 H[4] 10mils 5 Height of Substrate 18 TanD[4] 0 -1 Dielectric Loss Tangent 19 T[4] 0mils 5 Thickness 20 Cond[4] 1.0E+306 -1 Conductivity 21 Er[5] 4.5 -1 Dielectric Constant 22 H[5] 10mils 5 Height of Substrate 23 TanD[5] 0 -1 Dielectric Loss Tangent 24 T[5] 0mils 5 Thickness 25 Cond[5] 1.0E+306 -1 Conductivity 26 Er[6] 4.5 -1 Dielectric Constant 27 H[6] 10mils 5 Height of Substrate 28 TanD[6] 0 -1 Dielectric Loss Tangent 29 T[6] 0mils 5 Thickness 30 Cond[6] 1.0E+306 -1 Conductivity 31 Er[7] 4.5 -1 Dielectric Constant 32 H[7] 10mils 5 Height of Substrate 33 TanD[7] 0 -1 Dielectric Loss Tangent 34 T[7] 0mils 5 Thickness 35 Cond[7] 1.0E+306 -1 Conductivity 36 Er[8] 4.5 -1 Dielectric Constant 37 H[8] 10mils 5 Height of Substrate 38 TanD[8] 0 -1 Dielectric Loss Tangent 39 T[8] 0mils 5 Thickness 40 Cond[8] 1.0E+306 -1 Conductivity 41 Er[9] 4.5 -1 Dielectric Constant 42 H[9] 10mils 5 Height of Substrate 43 TanD[9] 0 -1 Dielectric Loss Tangent 44 T[9] 0mils 5 Thickness 45 Cond[9] 1.0E+306 -1 Conductivity 46 Er[10] 4.5 -1 Dielectric Constant 47 H[10] 10mils 5 Height of Substrate 48 TanD[10] 0 -1 Dielectric Loss Tangent 49 T[10] 0mils 5 Thickness 50 Cond[10] 1.0E+306 -1 Conductivity 51 Er[11] 4.5 -1 Dielectric Constant 52 H[11] 10mils 5 Height of Substrate 53 TanD[11] 0 -1 Dielectric Loss Tangent 54 T[11] 0mils 5 Thickness 55 Cond[11] 1.0E+306 -1 Conductivity 56 Er[12] 4.5 -1 Dielectric Constant 57 H[12] 10mils 5 Height of Substrate 58 TanD[12] 0 -1 Dielectric Loss Tangent 59 T[12] 0mils 5 Thickness 60 Cond[12] 1.0E+306 -1 Conductivity 61 Er[13] 4.5 -1 Dielectric Constant 62 H[13] 10mils 5 Height of Substrate 63 TanD[13] 0 -1 Dielectric Loss Tangent 64 T[13] 0mils 5 Thickness 65 Cond[13] 1.0E+306 -1 Conductivity 66 Er[14] 4.5 -1 Dielectric Constant 67 H[14] 10mils 5 Height of Substrate 68 TanD[14] 0 -1 Dielectric Loss Tangent 69 T[14] 0mils 5 Thickness 70 Cond[14] 1.0E+306 -1 Conductivity 71 Er[15] 4.5 -1 Dielectric Constant 72 H[15] 10mils 5 Height of Substrate 73 TanD[15] 0 -1 Dielectric Loss Tangent 74 T[15] 0mils 5 Thickness 75 Cond[15] 1.0E+306 -1 Conductivity 76 T[16] 0mils 5 Thickness 77 Cond[16] 1.0E+306 -1 Conductivity 78 LayerType[1] BLANK -2 Metal Definition 79 LayerType[2] SIGNAL -2 Metal Definition 80 LayerType[3] GROUND -2 Metal Definition 81 LayerType[4] POWER -2 Metal Definition 82 LayerType[5] POWER -2 Metal Definition 83 LayerType[6] POWER -2 Metal Definition 84 LayerType[7] POWER -2 Metal Definition 85 LayerType[8] POWER -2 Metal Definition 86 LayerType[9] POWER -2 Metal Definition 87 LayerType[10] POWER -2 Metal Definition 88 LayerType[11] POWER -2 Metal Definition 89 LayerType[12] POWER -2 Metal Definition 90 LayerType[13] POWER -2 Metal Definition 91 LayerType[14] POWER -2 Metal Definition 92 LayerType[15] POWER -2 Metal Definition 93 LayerType[16] POWER -2 Metal Definition 94 LayerName[1] smt_cond -1 (for Layout option) Layer to which cond is mapped 95 LayerName[2] smt_cond -1 (for Layout option) Layer to which cond is mapped 96 LayerName[3] smt_cond -1 (for Layout option) Layer to which cond is mapped 97 LayerName[4] smt_cond -1 (for Layout option) Layer to which cond is mapped 98 LayerName[5] smt_cond -1 (for Layout option) Layer to which cond is mapped 99 LayerName[6] smt_cond -1 (for Layout option) Layer to which cond is mapped 100 LayerName[7] smt_cond -1 (for Layout option) Layer to which cond is mapped 101 LayerName[8] smt_cond -1 (for Layout option) Layer to which cond is mapped 102 LayerName[9] smt_cond -1 (for Layout option) Layer to which cond is mapped 103 LayerName[10] smt_cond -1 (for Layout option) Layer to which cond is mapped 104 LayerName[11] smt_cond -1 (for Layout option) Layer to which cond is mapped 105 LayerName[12] smt_cond -1 (for Layout option) Layer to which cond is mapped 106 LayerName[13] smt_cond -1 (for Layout option) Layer to which cond is mapped 107 LayerName[14] smt_cond -1 (for Layout option) Layer to which cond is mapped 108 LayerName[15] smt_cond -1 (for Layout option) Layer to which cond is mapped 109 LayerName[16] smt_cond -1 (for Layout option) Layer to which cond is mapped END_ELEMENT MLSUBSTRATE2 MLSUBSTRATE2 11 1 Er 4.5 -1 Dielectric Constant 2 H 10mils 5 Height of Substrate 3 TanD 0 -1 Dielectric Loss Tangent 4 T[1] 0mils 5 Thickness 5 Cond[1] 1.0E+306 -1 Conductivity 6 T[2] 0mils 5 Thickness 7 Cond[2] 1.0E+306 -1 Conductivity 8 LayerType[1] SIGNAL -2 Metal Definition 9 LayerType[2] GROUND -2 Metal Definition 10 LayerName[1] smt_cond -1 (for Layout option) Layer to which cond is mapped 11 LayerName[2] smt_cond -1 (for Layout option) Layer to which cond is mapped END_ELEMENT MLSUBSTRATE3 MLSUBSTRATE3 18 1 Er[1] 4.5 -1 Dielectric Constant 2 H[1] 10mils 5 Height of Substrate 3 TanD[1] 0 -1 Dielectric Loss Tangent 4 T[1] 0mils 5 Thickness 5 Cond[1] 1.0E+306 -1 Conductivity 6 Er[2] 4.5 -1 Dielectric Constant 7 H[2] 10mils 5 Height of Substrate 8 TanD[2] 0 -1 Dielectric Loss Tangent 9 T[2] 0mils 5 Thickness 10 Cond[2] 1.0E+306 -1 Conductivity 11 T[3] 0mils 5 Thickness 12 Cond[3] 1.0E+306 -1 Conductivity 13 LayerType[1] GROUND -2 Metal Definition 14 LayerType[2] SIGNAL -2 Metal Definition 15 LayerType[3] GROUND -2 Metal Definition 16 LayerName[1] smt_cond -1 (for Layout option) Layer to which cond is mapped 17 LayerName[2] smt_cond -1 (for Layout option) Layer to which cond is mapped 18 LayerName[3] smt_cond -1 (for Layout option) Layer to which cond is mapped END_ELEMENT MLSUBSTRATE4 MLSUBSTRATE4 25 1 Er[1] 4.5 -1 Dielectric Constant 2 H[1] 10mils 5 Height of Substrate 3 TanD[1] 0 -1 Dielectric Loss Tangent 4 T[1] 0mils 5 Thickness 5 Cond[1] 1.0E+306 -1 Conductivity 6 Er[2] 4.5 -1 Dielectric Constant 7 H[2] 10mils 5 Height of Substrate 8 TanD[2] 0 -1 Dielectric Loss Tangent 9 T[2] 0mils 5 Thickness 10 Cond[2] 1.0E+306 -1 Conductivity 11 Er[3] 4.5 -1 Dielectric Constant 12 H[3] 10mils 5 Height of Substrate 13 TanD[3] 0 -1 Dielectric Loss Tangent 14 T[3] 0mils 5 Thickness 15 Cond[3] 1.0E+306 -1 Conductivity 16 T[4] 0mils 5 Thickness 17 Cond[4] 1.0E+306 -1 Conductivity 18 LayerType[1] BLANK -2 Metal Definition 19 LayerType[2] SIGNAL -2 Metal Definition 20 LayerType[3] GROUND -2 Metal Definition 21 LayerType[4] POWER -2 Metal Definition 22 LayerName[1] smt_cond -1 (for Layout option) Layer to which cond is mapped 23 LayerName[2] smt_cond -1 (for Layout option) Layer to which cond is mapped 24 LayerName[3] smt_cond -1 (for Layout option) Layer to which cond is mapped 25 LayerName[4] smt_cond -1 (for Layout option) Layer to which cond is mapped END_ELEMENT MLSUBSTRATE5 MLSUBSTRATE5 32 1 Er[1] 4.5 -1 Dielectric Constant 2 H[1] 10mils 5 Height of Substrate 3 TanD[1] 0 -1 Dielectric Loss Tangent 4 T[1] 0mils 5 Thickness 5 Cond[1] 1.0E+306 -1 Conductivity 6 Er[2] 4.5 -1 Dielectric Constant 7 H[2] 10mils 5 Height of Substrate 8 TanD[2] 0 -1 Dielectric Loss Tangent 9 T[2] 0mils 5 Thickness 10 Cond[2] 1.0E+306 -1 Conductivity 11 Er[3] 4.5 -1 Dielectric Constant 12 H[3] 10mils 5 Height of Substrate 13 TanD[3] 0 -1 Dielectric Loss Tangent 14 T[3] 0mils 5 Thickness 15 Cond[3] 1.0E+306 -1 Conductivity 16 Er[4] 4.5 -1 Dielectric Constant 17 H[4] 10mils 5 Height of Substrate 18 TanD[4] 0 -1 Dielectric Loss Tangent 19 T[4] 0mils 5 Thickness 20 Cond[4] 1.0E+306 -1 Conductivity 21 T[5] 0mils 5 Thickness 22 Cond[5] 1.0E+306 -1 Conductivity 23 LayerType[1] BLANK -2 Metal Definition 24 LayerType[2] SIGNAL -2 Metal Definition 25 LayerType[3] GROUND -2 Metal Definition 26 LayerType[4] POWER -2 Metal Definition 27 LayerType[5] POWER -2 Metal Definition 28 LayerName[1] smt_cond -1 (for Layout option) Layer to which cond is mapped 29 LayerName[2] smt_cond -1 (for Layout option) Layer to which cond is mapped 30 LayerName[3] smt_cond -1 (for Layout option) Layer to which cond is mapped 31 LayerName[4] smt_cond -1 (for Layout option) Layer to which cond is mapped 32 LayerName[5] smt_cond -1 (for Layout option) Layer to which cond is mapped END_ELEMENT MLSUBSTRATE6 MLSUBSTRATE6 39 1 Er[1] 4.5 -1 Dielectric Constant 2 H[1] 10mils 5 Height of Substrate 3 TanD[1] 0 -1 Dielectric Loss Tangent 4 T[1] 0mils 5 Thickness 5 Cond[1] 1.0E+306 -1 Conductivity 6 Er[2] 4.5 -1 Dielectric Constant 7 H[2] 10mils 5 Height of Substrate 8 TanD[2] 0 -1 Dielectric Loss Tangent 9 T[2] 0mils 5 Thickness 10 Cond[2] 1.0E+306 -1 Conductivity 11 Er[3] 4.5 -1 Dielectric Constant 12 H[3] 10mils 5 Height of Substrate 13 TanD[3] 0 -1 Dielectric Loss Tangent 14 T[3] 0mils 5 Thickness 15 Cond[3] 1.0E+306 -1 Conductivity 16 Er[4] 4.5 -1 Dielectric Constant 17 H[4] 10mils 5 Height of Substrate 18 TanD[4] 0 -1 Dielectric Loss Tangent 19 T[4] 0mils 5 Thickness 20 Cond[4] 1.0E+306 -1 Conductivity 21 Er[5] 4.5 -1 Dielectric Constant 22 H[5] 10mils 5 Height of Substrate 23 TanD[5] 0 -1 Dielectric Loss Tangent 24 T[5] 0mils 5 Thickness 25 Cond[5] 1.0E+306 -1 Conductivity 26 T[6] 0mils 5 Thickness 27 Cond[6] 1.0E+306 -1 Conductivity 28 LayerType[1] BLANK -2 Metal Definition 29 LayerType[2] SIGNAL -2 Metal Definition 30 LayerType[3] GROUND -2 Metal Definition 31 LayerType[4] POWER -2 Metal Definition 32 LayerType[5] POWER -2 Metal Definition 33 LayerType[6] POWER -2 Metal Definition 34 LayerName[1] smt_cond -1 (for Layout option) Layer to which cond is mapped 35 LayerName[2] smt_cond -1 (for Layout option) Layer to which cond is mapped 36 LayerName[3] smt_cond -1 (for Layout option) Layer to which cond is mapped 37 LayerName[4] smt_cond -1 (for Layout option) Layer to which cond is mapped 38 LayerName[5] smt_cond -1 (for Layout option) Layer to which cond is mapped 39 LayerName[6] smt_cond -1 (for Layout option) Layer to which cond is mapped END_ELEMENT MLSUBSTRATE7 MLSUBSTRATE7 46 1 Er[1] 4.5 -1 Dielectric Constant 2 H[1] 10mils 5 Height of Substrate 3 TanD[1] 0 -1 Dielectric Loss Tangent 4 T[1] 0mils 5 Thickness 5 Cond[1] 1.0E+306 -1 Conductivity 6 Er[2] 4.5 -1 Dielectric Constant 7 H[2] 10mils 5 Height of Substrate 8 TanD[2] 0 -1 Dielectric Loss Tangent 9 T[2] 0mils 5 Thickness 10 Cond[2] 1.0E+306 -1 Conductivity 11 Er[3] 4.5 -1 Dielectric Constant 12 H[3] 10mils 5 Height of Substrate 13 TanD[3] 0 -1 Dielectric Loss Tangent 14 T[3] 0mils 5 Thickness 15 Cond[3] 1.0E+306 -1 Conductivity 16 Er[4] 4.5 -1 Dielectric Constant 17 H[4] 10mils 5 Height of Substrate 18 TanD[4] 0 -1 Dielectric Loss Tangent 19 T[4] 0mils 5 Thickness 20 Cond[4] 1.0E+306 -1 Conductivity 21 Er[5] 4.5 -1 Dielectric Constant 22 H[5] 10mils 5 Height of Substrate 23 TanD[5] 0 -1 Dielectric Loss Tangent 24 T[5] 0mils 5 Thickness 25 Cond[5] 1.0E+306 -1 Conductivity 26 Er[6] 4.5 -1 Dielectric Constant 27 H[6] 10mils 5 Height of Substrate 28 TanD[6] 0 -1 Dielectric Loss Tangent 29 T[6] 0mils 5 Thickness 30 Cond[6] 1.0E+306 -1 Conductivity 31 T[7] 0mils 5 Thickness 32 Cond[7] 1.0E+306 -1 Conductivity 33 LayerType[1] BLANK -2 Metal Definition 34 LayerType[2] SIGNAL -2 Metal Definition 35 LayerType[3] GROUND -2 Metal Definition 36 LayerType[4] POWER -2 Metal Definition 37 LayerType[5] POWER -2 Metal Definition 38 LayerType[6] POWER -2 Metal Definition 39 LayerType[7] POWER -2 Metal Definition 40 LayerName[1] smt_cond -1 (for Layout option) Layer to which cond is mapped 41 LayerName[2] smt_cond -1 (for Layout option) Layer to which cond is mapped 42 LayerName[3] smt_cond -1 (for Layout option) Layer to which cond is mapped 43 LayerName[4] smt_cond -1 (for Layout option) Layer to which cond is mapped 44 LayerName[5] smt_cond -1 (for Layout option) Layer to which cond is mapped 45 LayerName[6] smt_cond -1 (for Layout option) Layer to which cond is mapped 46 LayerName[7] smt_cond -1 (for Layout option) Layer to which cond is mapped END_ELEMENT MLSUBSTRATE8 MLSUBSTRATE8 53 1 Er[1] 4.5 -1 Dielectric Constant 2 H[1] 10mils 5 Height of Substrate 3 TanD[1] 0 -1 Dielectric Loss Tangent 4 T[1] 0mils 5 Thickness 5 Cond[1] 1.0E+306 -1 Conductivity 6 Er[2] 4.5 -1 Dielectric Constant 7 H[2] 10mils 5 Height of Substrate 8 TanD[2] 0 -1 Dielectric Loss Tangent 9 T[2] 0mils 5 Thickness 10 Cond[2] 1.0E+306 -1 Conductivity 11 Er[3] 4.5 -1 Dielectric Constant 12 H[3] 10mils 5 Height of Substrate 13 TanD[3] 0 -1 Dielectric Loss Tangent 14 T[3] 0mils 5 Thickness 15 Cond[3] 1.0E+306 -1 Conductivity 16 Er[4] 4.5 -1 Dielectric Constant 17 H[4] 10mils 5 Height of Substrate 18 TanD[4] 0 -1 Dielectric Loss Tangent 19 T[4] 0mils 5 Thickness 20 Cond[4] 1.0E+306 -1 Conductivity 21 Er[5] 4.5 -1 Dielectric Constant 22 H[5] 10mils 5 Height of Substrate 23 TanD[5] 0 -1 Dielectric Loss Tangent 24 T[5] 0mils 5 Thickness 25 Cond[5] 1.0E+306 -1 Conductivity 26 Er[6] 4.5 -1 Dielectric Constant 27 H[6] 10mils 5 Height of Substrate 28 TanD[6] 0 -1 Dielectric Loss Tangent 29 T[6] 0mils 5 Thickness 30 Cond[6] 1.0E+306 -1 Conductivity 31 Er[7] 4.5 -1 Dielectric Constant 32 H[7] 10mils 5 Height of Substrate 33 TanD[7] 0 -1 Dielectric Loss Tangent 34 T[7] 0mils 5 Thickness 35 Cond[7] 1.0E+306 -1 Conductivity 36 T[8] 0mils 5 Thickness 37 Cond[8] 1.0E+306 -1 Conductivity 38 LayerType[1] BLANK -2 Metal Definition 39 LayerType[2] SIGNAL -2 Metal Definition 40 LayerType[3] GROUND -2 Metal Definition 41 LayerType[4] POWER -2 Metal Definition 42 LayerType[5] POWER -2 Metal Definition 43 LayerType[6] POWER -2 Metal Definition 44 LayerType[7] POWER -2 Metal Definition 45 LayerType[8] POWER -2 Metal Definition 46 LayerName[1] smt_cond -1 (for Layout option) Layer to which cond is mapped 47 LayerName[2] smt_cond -1 (for Layout option) Layer to which cond is mapped 48 LayerName[3] smt_cond -1 (for Layout option) Layer to which cond is mapped 49 LayerName[4] smt_cond -1 (for Layout option) Layer to which cond is mapped 50 LayerName[5] smt_cond -1 (for Layout option) Layer to which cond is mapped 51 LayerName[6] smt_cond -1 (for Layout option) Layer to which cond is mapped 52 LayerName[7] smt_cond -1 (for Layout option) Layer to which cond is mapped 53 LayerName[8] smt_cond -1 (for Layout option) Layer to which cond is mapped END_ELEMENT MLSUBSTRATE9 MLSUBSTRATE9 60 1 Er[1] 4.5 -1 Dielectric Constant 2 H[1] 10mils 5 Height of Substrate 3 TanD[1] 0 -1 Dielectric Loss Tangent 4 T[1] 0mils 5 Thickness 5 Cond[1] 1.0E+306 -1 Conductivity 6 Er[2] 4.5 -1 Dielectric Constant 7 H[2] 10mils 5 Height of Substrate 8 TanD[2] 0 -1 Dielectric Loss Tangent 9 T[2] 0mils 5 Thickness 10 Cond[2] 1.0E+306 -1 Conductivity 11 Er[3] 4.5 -1 Dielectric Constant 12 H[3] 10mils 5 Height of Substrate 13 TanD[3] 0 -1 Dielectric Loss Tangent 14 T[3] 0mils 5 Thickness 15 Cond[3] 1.0E+306 -1 Conductivity 16 Er[4] 4.5 -1 Dielectric Constant 17 H[4] 10mils 5 Height of Substrate 18 TanD[4] 0 -1 Dielectric Loss Tangent 19 T[4] 0mils 5 Thickness 20 Cond[4] 1.0E+306 -1 Conductivity 21 Er[5] 4.5 -1 Dielectric Constant 22 H[5] 10mils 5 Height of Substrate 23 TanD[5] 0 -1 Dielectric Loss Tangent 24 T[5] 0mils 5 Thickness 25 Cond[5] 1.0E+306 -1 Conductivity 26 Er[6] 4.5 -1 Dielectric Constant 27 H[6] 10mils 5 Height of Substrate 28 TanD[6] 0 -1 Dielectric Loss Tangent 29 T[6] 0mils 5 Thickness 30 Cond[6] 1.0E+306 -1 Conductivity 31 Er[7] 4.5 -1 Dielectric Constant 32 H[7] 10mils 5 Height of Substrate 33 TanD[7] 0 -1 Dielectric Loss Tangent 34 T[7] 0mils 5 Thickness 35 Cond[7] 1.0E+306 -1 Conductivity 36 Er[8] 4.5 -1 Dielectric Constant 37 H[8] 10mils 5 Height of Substrate 38 TanD[8] 0 -1 Dielectric Loss Tangent 39 T[8] 0mils 5 Thickness 40 Cond[8] 1.0E+306 -1 Conductivity 41 T[9] 0mils 5 Thickness 42 Cond[9] 1.0E+306 -1 Conductivity 43 LayerType[1] BLANK -2 Metal Definition 44 LayerType[2] SIGNAL -2 Metal Definition 45 LayerType[3] GROUND -2 Metal Definition 46 LayerType[4] POWER -2 Metal Definition 47 LayerType[5] POWER -2 Metal Definition 48 LayerType[6] POWER -2 Metal Definition 49 LayerType[7] POWER -2 Metal Definition 50 LayerType[8] POWER -2 Metal Definition 51 LayerType[9] POWER -2 Metal Definition 52 LayerName[1] smt_cond -1 (for Layout option) Layer to which cond is mapped 53 LayerName[2] smt_cond -1 (for Layout option) Layer to which cond is mapped 54 LayerName[3] smt_cond -1 (for Layout option) Layer to which cond is mapped 55 LayerName[4] smt_cond -1 (for Layout option) Layer to which cond is mapped 56 LayerName[5] smt_cond -1 (for Layout option) Layer to which cond is mapped 57 LayerName[6] smt_cond -1 (for Layout option) Layer to which cond is mapped 58 LayerName[7] smt_cond -1 (for Layout option) Layer to which cond is mapped 59 LayerName[8] smt_cond -1 (for Layout option) Layer to which cond is mapped 60 LayerName[9] smt_cond -1 (for Layout option) Layer to which cond is mapped END_ELEMENT MLVIAHOLE MLVIAHOLE 6 1 Subst Subst1 -1 Substrate 2 DiamVia 5mils 5 Diameter of Via 3 T 0mils 5 Plating Thickness 4 Cond[1] 1.0E+306 -1 Conductivity 5 Layer1 1 -2 Layer 6 Layer2 2 -2 Layer END_ELEMENT MLVIAPAD MLVIAPAD 5 1 Subst Subst1 -1 Substrate 2 DiamVia 5mils 5 Diameter of Via 3 DiamPad 15mils 5 Diameter of Pad 4 Layer 1 -2 Layer 5 Angle 180deg 7 For Layout Only: angle from input pin to output pin END_ELEMENT MM9_NMOS MM9_NMOS 10 1 Model MOSFETM1 -1 Model instance name 2 Length '' 5 Channel Length, m 3 Width '' 5 Channel Width, m 4 Ab '' -1 Diffusion Area, m^2 5 Ls '' 5 Length of sidewall not under gate, m 6 Lg '' 5 Length of sidewall under gate, m 7 Region '' -1 DC operating region, 0=off, 1=on, 2=rev, 3=sat 8 Temp '' 12 Device operating temperature 9 Mult '' -1 Number of Devices in Parallel 10 Mode simtype_nonlin -1 Simulation Mode for This Device END_ELEMENT MOSFET_NMOS MOSFET_NMOS 13 1 Model MOSFETM1 -1 Model instance name 2 Length '' 5 Channel Length, m 3 Width '' 5 Channel Width, m 4 Ad '' -1 Drain Area, m^2 5 As '' -1 Source Area, m^2 6 Pd '' 5 Drain Perimeter, m 7 Ps '' 5 Source Perimeter, m 8 Nrd '' -1 Drain Squares 9 Nrs '' -1 Source Squares 10 Mult '' -1 Number of Devices in Parallel 11 Region '' -1 DC operating region, 0=off, 1=on, 2=rev, 3=sat 12 Temp '' 12 Device operating temperature 13 Mode simtype_nonlin -1 Simulation Mode for This Device END_ELEMENT MOSFET_PMOS MOSFET_PMOS 13 1 Model MOSFETM1 -1 Model instance name 2 Length '' 5 Channel Length, m 3 Width '' 5 Channel Width, m 4 Ad '' -1 Drain Area, m^2 5 As '' -1 Source Area, m^2 6 Pd '' 5 Drain Perimeter, m 7 Ps '' 5 Source Perimeter, m 8 Nrd '' -1 Drain Squares 9 Nrs '' -1 Source Squares 10 Mult '' -1 Number of Devices in Parallel 11 Region '' -1 DC operating region, 0=off, 1=on, 2=rev, 3=sat 12 Temp '' 12 Device operating temperature 13 Mode simtype_nonlin -1 Simulation Mode for This Device END_ELEMENT MOS_Model9_Process MOS_Model9_Process 96 1 NMOS y_n1 -1 Model Type - YES or NO 2 PMOS y_n0 -1 Model Type - YES or NO 3 Type 2 -1 Type of model: 1:SINGLE_DEVICE 2:PROCESS_BASED 4 Ler '' 5 Effective Channel Length of the Reference Transistor, m 5 Wer '' 5 Effective Channel Width of the Reference Transistor, m 6 Lvar '' 5 Difference between the Actual and the Programmed Poly-Silicon Gate Length, m 7 Lap '' 5 Effective Channel Length Reduction per Side, m 8 Wvar '' 5 Difference between the Actual and the Programmed Field-Oxide Opening 9 Wot '' 5 Effective Channel Width Reduction per Side, m 10 Tr '' 12 Temperature for the Reference Transistor, Celsius 11 Vtor '' 9 Threshold Voltage at Zero Back-Bias, V 12 Stvto '' -1 Coefficient of the Temperature Dependence of VTO, V/K 13 Slvto '' -1 Coefficient of the Length Dependence of VTO, V*m 14 Sl2vto '' -1 Second Coefficient of the Length Dependence of VTO, V*m^2 15 Swvto '' -1 Coefficient of the Width Dependence of VTO, V*m 16 Kor '' -1 Low Back-Bias Body Factor, V^(1/2) 17 Slko '' -1 Coefficient of the Length Dependence of KO, m*V^(1/2) 18 Swko '' -1 Coefficient of the Width Dependence of KO, m*V^(1/2) 19 Kr '' -1 High Back-Bias Body Factor, V^(1/2) 20 Slk '' -1 Coefficient of the Length Dependence of K, m*V^(1/2) 21 Swk '' -1 Coefficient of the Width Dependence of K, m*V^(1/2) 22 Phibr '' 9 Surface Potential at Strong Inversion, V 23 Vsbxr '' 9 Transition Voltage for the Dual-K-Factor Model, V 24 Slvsbx '' -1 Coefficient of the Length Dependence of VSBX, V*m 25 Swvsbx '' -1 Coefficient of the Width Dependence of VSBX, V*m 26 Betsq '' -1 Gain Factor, A/V^2 27 Etabet '' -1 Exponent of the Temperature Dependence of BET 28 The1r '' -1 Coefficient of the Mobility Reduction due to the Gate-Induced Field, 1/V 29 Stthe1r '' -1 Coefficient of the Temperature Dependence of THE1, 1/V/K 30 Slthe1r '' -1 Coefficient of the Length Dependence of THE1, m/V 31 Stlthe1 '' -1 Coefficient of the Temperature Dependence of the Length Dependence of THE1, m/V/K 32 Swthe1 '' -1 Coefficient of the Width Dependence of THE1, m/V 33 The2r '' -1 Coefficient of the Mobility Reduction due to the Back-Bias, V^(-1/2) 34 Stthe2r '' -1 Coefficient of the Temperature Dependence of THE2, V^(-1/2)/K 35 Slthe2r '' -1 Coefficient of the Length Dependence of THE2, m/V^(1/2) 36 Stlthe2 '' -1 Coefficient of the Temperature Dependence of the Length Dependence of THE2, m/V^(1/2)/K 37 Swthe2 '' -1 Coefficient of the Width Dependence of THE2, m/V^(1/2) 38 The3r '' -1 Coefficient of the Mobility Reduction due to the Lateral Field, 1/V 39 Stthe3r '' -1 Coefficient of the Temperature Dependence of THE3, 1/V/K 40 Slthe3r '' -1 Coefficient of the Length Dependence of THE3, m/V 41 Stlthe3 '' -1 Coefficient of the Temperature Dependence of the Length Dependence of THE3, m/V/K 42 Swthe3 '' -1 Coefficient of the Width Dependence of THE3, m/V 43 Gam1r '' 9 Coefficient for the Drain Induced Threshold Shift, V 44 Slgam1 '' -1 Coefficient of the Length Dependence of GAM1, V*m 45 Swgam1 '' -1 Coefficient of the Width Dependence of GAM1, V*m 46 Etadsr '' -1 Exponent of the Vds Dependence of GAM1 47 Alpr '' -1 Factor of the Channel-Length Modulation 48 Etaalp '' -1 Exponent of the Length Dependence of ALP 49 Slalp '' 5 Coefficient of the Length Dependence of ALP, m 50 Swalp '' 5 Coefficient of the Width Dependence of ALP, m 51 Vpr '' 9 Characteristic Voltage of Channel Length Modulation, V 52 Gamoor '' -1 Coefficient of the Drain-Induced Threshold Shift 53 Slgamoo '' 5 Coefficient of the Length Dependence of GAMOO, m 54 Etagamr '' -1 Exponent of the Back-Bias Dependence of GAMO 55 Mor '' -1 Factor of the Subthreshold Slope 56 Stmo '' -1 Coefficient of the Temperature Dependence of MO, 1/K 57 Slmo '' -1 Coefficient of the Length Dependence of MO, m^(1/2) 58 Etamr '' -1 Exponent of the Back-Bias Dependence of M 59 Zet1r '' -1 Weak Inversion Correction Factor 60 Etazet '' -1 Exponent of the Length Dependence of ZET 61 Slzet1 '' 5 Coefficient of the Length Dependence of ZET 62 Vsbtr '' 9 Limiting Voltage of the VSB Dependence of M and GAMO, V 63 Slvsbt '' -1 Coefficient of the Length Dependence of VSBT, m*V 64 A1r '' -1 Factor of the Weak-Avalanche Current 65 Sta1 '' -1 Coefficient of the Temperature Dependence of A1, 1/K 66 Sla1 '' 5 Coefficient of the Length Dependence of A1, m 67 Swa1 '' 5 Coefficient of the Width Dependence of A1, m 68 A2r '' 9 Exponent of the Weak-Avalanche Current, V 69 Sla2 '' -1 Coefficient of the Length Dependence of A2, m*V 70 Swa2 '' -1 Coefficient of the Width Dependence of A2, m*V 71 A3r '' -1 Factor of Vds above which Weak-Avalanche Occurs 72 Sla3 '' 5 Coefficient of the Length Dependence of A3, m 73 Swa3 '' 5 Coefficient of the Width Dependence of A3, m 74 Tox '' 5 Thickness of the Oxide Layer, m 75 Col '' -1 Gate Overlap Capacitance per Unit Channel Width, F/m 76 Ntr '' -1 Coefficient of the Thermal Noise 77 Nfr '' -1 Coefficient of the Flicker Noise 78 Vr '' 9 Reference Voltage, V 79 Jsgbr '' -1 Bottom Saturation Current Density due to Electron-Hole generation, A/m^2 80 Jsdbr '' -1 Bottom Saturation Current Density due to Diffusion from Back Contact, A/m^2 81 Jsgsr '' -1 Sidewall Saturation Current Density due to Electron-Hole generation, A/m 82 Jsdsr '' -1 Sidewall Saturation Current Density due to Diffusion from Back Contact, A/m 83 Jsggr '' -1 Gate-Edge Saturation Current Density due to Electron-Hole generation, A/m 84 Jsdgr '' -1 Gate-Edge Saturation Current Density due to Diffusion from Back Contact, A/m 85 Cjbr '' -1 Bottom Junction Capacitance, F/m^2 86 Cjsr '' -1 Sidewall Junction Capacitance, F/m 87 Cjgr '' -1 Gate-Edge Junction Capacitance, F/m 88 Vdbr '' 9 Diffusion Voltage of the Bottom Junction, V 89 Vdsr '' 9 Diffusion Voltage of the Sidewall Junction, V 90 Vdgr '' 9 Diffusion Voltage of the Gate-Edge Junction, V 91 Pb '' -1 Bottom Junction Grading Coefficient 92 Ps '' -1 Sidewall Junction Grading Coefficient 93 Pg '' -1 Gate-Edge Junction Grading Coefficient 94 Nb '' -1 Emission Coefficient of the Bottom Forward Current 95 Ns '' -1 Emission Coefficient of the Sidewall Forward Current 96 Ng '' -1 Emission Coefficient of the Gate-Edge Forward Current END_ELEMENT MOS_Model9_Single MOS_Model9_Single 54 1 NMOS y_n1 -1 Model Type - YES or NO 2 PMOS y_n0 -1 Model Type - YES or NO 3 Type 1 -1 Type of model: 1:SINGLE_DEVICE 2:PROCESS_BASED 4 Vto '' 9 Threshold Voltage at Zero Back-Bias, V 5 Ko '' -1 Low Back-Bias Body Factor, V^(1/2) 6 K '' -1 High Back-Bias Body Factor, V^(1/2) 7 Phib '' 9 Surface Potential at Strong Inversion, V 8 Vsbx '' 9 Transition Voltage for the Dual-K-Factor Model, V 9 Bet '' -1 Gain Factor, A/V^2 10 The1 '' -1 Coefficient of the Mobility Reduction due to the Gate-Induced Field, 1/V 11 The2 '' -1 Coefficient of the Mobility Reduction due to the Back-Bias, V^(-1/2) 12 The3 '' -1 Coefficient of the Mobility Reduction due to the Lateral Field, 1/V 13 Gam1 '' 9 Coefficient for the Drain Induced Threshold Shift, V 14 Etads '' -1 Exponent of the Vds Dependence of GAM1 15 Alp '' -1 Factor of the Channel-Length Modulation 16 Vp '' 9 Characteristic Voltage of Channel Length Modulation, V 17 Gamoo '' -1 Coefficient of the Drain-Induced Threshold Shift 18 Etagam '' -1 Exponent of the Back-Bias Dependence of GAMO 19 Mo '' -1 Factor of the Subthreshold Slope 20 Etam '' -1 Exponent of the Back-Bias Dependence of M 21 Zet1 '' -1 Weak Inversion Correction Factor 22 Vsbt '' 9 Limiting Voltage of the VSB Dependence of M and GAMO, V 23 A1 '' -1 Factor of the Weak-Avalanche Current 24 A2 '' 9 Exponent of the Weak-Avalanche Current, V 25 A3 '' -1 Factor of Vds above which Weak-Avalanche Occurs 26 Cox '' 4 Gate to Channel Capacitance, F 27 Cgdo '' 4 Gate-Drain Overlap Capacitance, F 28 Cgso '' 4 Gate-Source Overlap Capacitance, F 29 Nt '' -1 Coefficient of the Thermal Noise 30 Nf '' -1 Coefficient of the Flicker Noise 31 Isgb '' -1 Bottom Saturation Current Density due to Electron-Hole generation, A 32 Isdb '' 10 Bottom Saturation Current Density due to Diffusion from Back Contact, A 33 Isgs '' 10 Sidewall Saturation Current Density due to Electron-Hole generation, A 34 Isds '' 10 Sidewall Saturation Current Density due to Diffusion from Back Contact, A 35 Isgg '' 10 Gate-Edge Saturation Current Density due to Electron-Hole Generation, A 36 Isdg '' 10 Gate-Edge Saturation Current Density due to Diffusion from Back Contact, A 37 Cjb '' 4 Bottom Junction Capacitance, F 38 Cjs '' 4 Sidewall Junction Capacitance, F 39 Cjg '' 4 Gate-Edge Junction Capacitance, F 40 Vdb '' 9 Diffusion Voltage of the Bottom Junction, V 41 Vds '' 9 Diffusion Voltage of the Sidewall Junction, V 42 Vdg '' 9 Diffusion Voltage of the Gate-Edge Junction, V 43 Pb '' -1 Bottom Junction Grading Coefficient 44 Ps '' -1 Sidewall Junction Grading Coefficient 45 Pg '' -1 Gate-Edge Junction Grading Coefficient 46 Nb '' -1 Emission Coefficient of the Bottom Forward Current 47 Ns '' -1 Emission Coefficient of the Sidewall Forward Current 48 Ng '' -1 Emission Coefficient of the Gate-Edge Forward Current 49 wVsubfwd '' 9 Substrate Junction Forward Bias (warning), V 50 wBvsub '' 9 Substrate Junction Reverse Breakdown Voltage (warning), V 51 wBvg '' 9 Gate Oxide Breakdown Voltage (warning), V 52 wBvds '' 9 Drain-Source Breakdown Voltage (warning), V 53 wIdsmax '' 10 Maximum Drain-Source Current (warning), A 54 wPmax '' 8 Maximum Power Dissipation (warning), W END_ELEMENT MRIND MRIND 9 1 Subst MSub1 -1 Substrate instance name 2 N 3.0 -1 Number of turns 3 L1 30.0mils 5 Length of second outermost segment 4 L2 20.0mils 5 Length of outermost segment 5 W 1.0mils 5 Conductor width 6 S 1.0mils 5 Conductor spacing 7 Temp '' 12 Physical temperature 8 W1 1.0mils 5 (for Layout option) Width of line that connects to pin 1 9 WB 1.0mils 5 (for Layout option) Width of line that connects to pin 2 END_ELEMENT MRINDELA MRINDELA 18 1 Subst MSub1 -1 Substrate instance name 2 Ns 7 -1 Number of segments 3 L1 11.4mils 5 Length of first segment 4 L2 9.4mils 5 Length of second segment 5 L3 7.4mils 5 Length of third segment 6 Ln 0mils 5 Length of last segment 7 W 0.45mils 5 Conductor width 8 S 0.35mils 5 Conductor spacing 9 Hi 12.5mils 5 Elevation of inductor above substrate 10 Ti 0.118mils 5 Thickness of conductors 11 Ri 1.0 -1 Resistivity (normalized to gold) of conductors 12 Sx 0mils 5 Spacing limit between support post 13 Cc 2.0 -1 Coeff. for capacitance of corner support posts 14 Cs 1.0 -1 Coeff. for capacitance of support posts along segment 15 Wu 0.4mils 5 Width of underpass strip conductor 16 Au 0.0deg 7 Angle of departure from innermost segment 17 UE 4.0mils 5 Extension of bridge beyond inductor 18 Temp '' 12 Physical temperature END_ELEMENT MRINDNBR MRINDNBR 9 1 Subst MSub1 -1 Substrate instance name 2 Ns 7 -1 Number of segments 3 L1 15.0mils 5 Length of first segment 4 L2 10.0mils 5 Length of second segment 5 L3 8.0mils 5 Length of third segment 6 Ln 0mils 5 Length of last segment 7 W 1.0mils 5 Conductor width 8 S 1.0mils 5 Conductor spacing 9 Temp '' 12 Physical temperature END_ELEMENT MRINDWBR MRINDWBR 14 1 Subst MSub1 -1 Substrate instance name 2 Ns 7 -1 Number of segments 3 L1 11.4mils 5 Length of first segment 4 L2 9.4mils 5 Length of second segment 5 L3 7.4mils 5 Length of third segment 6 Ln 0mils 5 Length of last segment 7 W 0.45mils 5 Conductor width 8 S 0.35mils 5 Conductor spacing 9 Dw 0.4mils 5 Diameter of bridge round wire 10 Rb 0.1 -1 Resistivity (normalized to gold) of bridge wire 11 Hw 15.0mils 5 Height of wire bridge above the inductor 12 Aw 0.0deg 7 Angle of departure from innermost segment 13 WE 4.0mils 5 Extension of bridge beyond inductor 14 Temp '' 12 Physical temperature END_ELEMENT MRSTUB MRSTUB 5 1 Subst MSub1 -1 Substrate instance name 2 Wi 25.0mils 5 Width of input line 3 L 100.0mils 5 Length of stub 4 Angle 70deg 7 Angle subtended by stub 5 Temp '' 12 Physical temperature END_ELEMENT MSIND MSIND 8 1 Subst MSub1 -1 Substrate instance name 2 N 2.0 -1 Number of turns 3 Ri 50.0mils 5 Inner radius 4 W 10.0mils 5 Conductor width 5 S 10.0mils 5 Conductor spacing 6 Temp '' 12 Physical temperature 7 W1 10.0mils 5 (for Layout option) Width of strip ending at pin 1 8 W2 10.0mils 5 (for Layout option) Width of strip ending at pin 2 END_ELEMENT MSLIT MSLIT 5 1 Subst MSub1 -1 Substrate instance name 2 W 25.0mils 5 Width 3 D 15.0mils 5 Depth of slit 4 L 10.0mils 5 Length of slit 5 Temp '' 12 Physical temperature END_ELEMENT MSOP MSOP 8 1 Subst MSub1 -1 Substrate instance name 2 W1 25.0mils 5 Width of input line 3 D1 5.0mils 5 Distance Between Centerlines of Input Line and Stub Pair 4 W2 10.0mils 5 Width of output line 5 D2 5.0mils 5 Distance Between centerlines of output line and Stub Pair 6 Ws 10.0mils 5 Width of the stubs 7 Ls 30.0mils 5 Combined length of the stubs 8 Temp '' 12 Physical temperature END_ELEMENT MSTEP MSTEP 4 1 Subst MSub1 -1 Substrate instance name 2 W1 25.0mils 5 Conductor width at pin 1 3 W2 50.0mils 5 Conductor width at pin 2 4 Temp '' 12 Physical temperature 5 AutomaticWidth 'Disabled' -1 END_ELEMENT MSUB MSUB 14 1 H 10.0mils 5 Substrate thickness 2 Er 9.6 -1 Relative dielectric constant 3 Mur 1 -1 Relative permeability 4 Cond 1.0E+306 -1 Conductor conductivity 5 Hu 1.0E+30m 5 Cover height 6 T 0m 5 Conductor thickness 7 TanD 0 -1 Dielectric loss tangent 8 Rough 0m 5 Conductor surface roughness 9 Cond1 cond -1 (for Layout option) Layer to which cond is mapped 10 Cond2 cond2 -1 (for Layout option) Layer to which cond2 is mapped 11 Diel1 diel -1 (for Layout option) Layer to which diel is mapped 12 Diel2 diel2 -1 (for Layout option) Layer to which diel2 is mapped 13 Hole hole -1 (for Layout option) Layer to which hole is mapped 14 Res resi -1 (for Layout option) Layer to which resi is mapped END_ELEMENT MTAPER MTAPER 5 1 Subst MSub1 -1 Substrate instance name 2 W1 25.0mils 5 Line width at pin 1 3 W2 20.0mils 5 Line width at pin 2 4 L 100.0mils 5 Line length 5 Temp '' 12 Physical temperature 6 AutomaticWidth 'Disabled' -1 END_ELEMENT MTEE MTEE 5 1 Subst MSub1 -1 Substrate instance name 2 W1 25.0mils 5 Conductor width at pin 1 3 W2 25.0mils 5 Conductor width at pin 2 4 W3 50.0mils 5 Conductor width at pin 3 5 Temp '' 12 Physical temperature 6 AutomaticWidth 'Disabled' -1 END_ELEMENT MTEEO MTEEO 5 1 Subst MSub1 -1 Substrate instance name 2 W1 25.0mils 5 Conductor width at pin 1 3 W2 25.0mils 5 Conductor width at pin 2 4 W3 50.0mils 5 Conductor width at pin 3 5 Temp '' 12 Physical temperature END_ELEMENT MTFC MTFC 13 1 Subst MSub1 -1 Substrate instance name 2 W 50.0mils 5 Dielectric width common to both metal plates 3 L 50.0mils 5 Dielectric length common to both metal plates 4 CPUA 300.0pF 4 Capacitance per unit area, (pF/mm^2) 5 T 0.2mils 5 Thickness of capacitor dielectric 6 RsT 0.0ohm 1 Sheet resistance of top metal plate 7 RsB 0.0ohm 1 Sheet resistance of bottom metal plate 8 TT 0mils 5 Thickness of top metal plate 9 TB 0mils 5 Thickness of bottom metal plate 10 COB 0mils 5 Bottom conductor overlap 11 Temp '' 12 Physical temperature 12 COT 0mils 5 (for Layout option) Top conductor overlap 13 DO 0mils 5 (for Layout option) Dielectric overlap END_ELEMENT MUC10 MUC10 65 1 L1 0.5nH 3 Self Inductance of Coil 1 2 R1 0.1ohm 1 Resistance of Coil 1 3 L2 1.0nH 3 Self Inductance of Coil 2 4 R2 0.2ohm 1 Resistance of Coil 2 5 L3 1.5nH 3 Self Inductance of Coil 3 6 R3 0.3ohm 1 Resistance of Coil 3 7 L4 2.0nH 3 Self Inductance of Coil 4 8 R4 0.4ohm 1 Resistance of Coil 4 9 L5 2.5nH 3 Self Inductance of Coil 5 10 R5 0.5ohm 1 Resistance of Coil 5 11 L6 3.0nH 3 Self Inductance of Coil 6 12 R6 0.6ohm 1 Resistance of Coil 6 13 L7 3.5nH 3 Self Inductance of Coil 7 14 R7 0.7ohm 1 Resistance of Coil 7 15 L8 4.0nH 3 Self Inductance of Coil 8 16 R8 0.8ohm 1 Resistance of Coil 8 17 L9 4.5nH 3 Self Inductance of Coil 9 18 R9 0.9ohm 1 Resistance of Coil 9 19 L10 5.0nH 3 Self Inductance of Coil 10 20 R10 1.0ohm 1 Resistance of Coil 10 21 K12 0.1 -1 Coupling coefficient - coils 1 and 2 22 K13 -0.1 -1 Coupling coefficient - coils 1 and 3 23 K14 0.2 -1 Coupling coefficient - coils 1 and 4 24 K15 -0.2 -1 Coupling coefficient - coils 1 and 5 25 K16 0.3 -1 Coupling coefficient - coils 1 and 6 26 K17 -0.3 -1 Coupling coefficient - coils 1 and 7 27 K18 0.4 -1 Coupling coefficient - coils 1 and 8 28 K19 -0.4 -1 Coupling coefficient - coils 1 and 9 29 K110 0.5 -1 Coupling coefficient - coils 1 and 10 30 K23 -0.5 -1 Coupling coefficient - coils 2 and 3 31 K24 0.6 -1 Coupling coefficient - coils 2 and 4 32 K25 -0.6 -1 Coupling coefficient - coils 2 and 5 33 K26 0.7 -1 Coupling coefficient - coils 2 and 6 34 K27 -0.7 -1 Coupling coefficient - coils 2 and 7 35 K28 0.8 -1 Coupling coefficient - coils 2 and 8 36 K29 -0.8 -1 Coupling coefficient - coils 2 and 9 37 K210 0.9 -1 Coupling coefficient - coils 2 and 10 38 K34 -0.9 -1 Coupling coefficient - coils 3 and 4 39 K35 0.91 -1 Coupling coefficient - coils 3 and 5 40 K36 -0.91 -1 Coupling coefficient - coils 3 and 6 41 K37 0.92 -1 Coupling coefficient - coils 3 and 7 42 K38 -0.92 -1 Coupling coefficient - coils 3 and 8 43 K39 0.93 -1 Coupling coefficient - coils 3 and 9 44 K310 -0.93 -1 Coupling coefficient - coils 3 and 10 45 K45 0.94 -1 Coupling coefficient - coils 4 and 5 46 K46 -0.94 -1 Coupling coefficient - coils 4 and 6 47 K47 0.95 -1 Coupling coefficient - coils 4 and 7 48 K48 -0.95 -1 Coupling coefficient - coils 4 and 8 49 K49 0.96 -1 Coupling coefficient - coils 4 and 9 50 K410 -0.96 -1 Coupling coefficient - coils 4 and 10 51 K56 0.97 -1 Coupling coefficient - coils 5 and 6 52 K57 -0.97 -1 Coupling coefficient - coils 5 and 7 53 K58 0.98 -1 Coupling coefficient - coils 5 and 8 54 K59 -0.98 -1 Coupling coefficient - coils 5 and 9 55 K510 0.99 -1 Coupling coefficient - coils 5 and 10 56 K67 -0.99 -1 Coupling coefficient - coils 6 and 7 57 K68 0.991 -1 Coupling coefficient - coils 6 and 8 58 K69 -0.991 -1 Coupling coefficient - coils 6 and 9 59 K610 0.992 -1 Coupling coefficient - coils 6 and 10 60 K78 -0.992 -1 Coupling coefficient - coils 7 and 8 61 K79 0.993 -1 Coupling coefficient - coils 7 and 9 62 K710 -0.993 -1 Coupling coefficient - coils 7 and 10 63 K89 0.994 -1 Coupling coefficient - coils 8 and 9 64 K810 -0.994 -1 Coupling coefficient - coils 8 and 10 65 K910 0.995 -1 Coupling coefficient - coils 9 and 10 END_ELEMENT MUC2 MUC2 5 1 L1 0.5nH 3 Self Inductance of Coil 1 2 R1 0.1ohm 1 Resistance of Coil 1 3 L2 1.0nH 3 Self Inductance of Coil 2 4 R2 0.2ohm 1 Resistance of Coil 2 5 K12 0.1 -1 Coupling coefficient - coils 1 and 2 END_ELEMENT MUC3 MUC3 9 1 L1 0.5nH 3 Self Inductance of Coil 1 2 R1 0.1ohm 1 Resistance of Coil 1 3 L2 1.0nH 3 Self Inductance of Coil 2 4 R2 0.2ohm 1 Resistance of Coil 2 5 L3 1.5nH 3 Self Inductance of Coil 3 6 R3 0.3ohm 1 Resistance of Coil 3 7 K12 0.1 -1 Coupling coefficient - coils 1 and 2 8 K13 -0.1 -1 Coupling coefficient - coils 1 and 3 9 K23 0.2 -1 Coupling coefficient - coils 2 and 3 END_ELEMENT MUC4 MUC4 14 1 L1 0.5nH 3 Self Inductance of Coil 1 2 R1 0.1ohm 1 Resistance of Coil 1 3 L2 1.5nH 3 Self Inductance of Coil 2 4 R2 0.2ohm 1 Resistance of Coil 2 5 L3 2.0nH 3 Self Inductance of Coil 3 6 R3 0.3ohm 1 Resistance of Coil 3 7 L4 2.5nH 3 Self Inductance of Coil 4 8 R4 0.4ohm 1 Resistance of Coil 4 9 K12 0.1 -1 Coupling coefficient - coils 1 and 2 10 K13 -0.1 -1 Coupling coefficient - coils 1 and 3 11 K14 0.2 -1 Coupling coefficient - coils 1 and 4 12 K23 -0.2 -1 Coupling coefficient - coils 2 and 3 13 K24 0.3 -1 Coupling coefficient - coils 2 and 4 14 K34 -0.3 -1 Coupling coefficient - coils 3 and 4 END_ELEMENT MUC5 MUC5 20 1 L1 0.5nH 3 Self Inductance of Coil 1 2 R1 0.1ohm 1 Resistance of Coil 1 3 L2 1.5nH 3 Self Inductance of Coil 2 4 R2 0.2ohm 1 Resistance of Coil 2 5 L3 2.0nH 3 Self Inductance of Coil 3 6 R3 0.3ohm 1 Resistance of Coil 3 7 L4 3.0nH 3 Self Inductance of Coil 4 8 R4 0.5ohm 1 Resistance of Coil 4 9 L5 2.5nH 3 Self Inductance of Coil 5 10 R5 0.4ohm 1 Resistance of Coil 5 11 K12 0.1 -1 Coupling coefficient - coils 1 and 2 12 K13 -0.1 -1 Coupling coefficient - coils 1 and 3 13 K14 0.2 -1 Coupling coefficient - coils 1 and 4 14 K15 -0.2 -1 Coupling coefficient - coils 1 and 5 15 K23 0.3 -1 Coupling coefficient - coils 2 and 3 16 K24 -0.3 -1 Coupling coefficient - coils 2 and 4 17 K25 0.4 -1 Coupling coefficient - coils 2 and 5 18 K34 -0.4 -1 Coupling coefficient - coils 3 and 4 19 K35 0.5 -1 Coupling coefficient - coils 3 and 5 20 K45 -0.5 -1 Coupling coefficient - coils 4 and 5 END_ELEMENT MUC6 MUC6 27 1 L1 0.5nH 3 Self Inductance of Coil 1 2 R1 0.1ohm 1 Resistance of Coil 1 3 L2 1.0nH 3 Self Inductance of Coil 2 4 R2 0.2ohm 1 Resistance of Coil 2 5 L3 1.5nH 3 Self Inductance of Coil 3 6 R3 0.3ohm 1 Resistance of Coil 3 7 L4 2.0nH 3 Self Inductance of Coil 4 8 R4 0.4ohm 1 Resistance of Coil 4 9 L5 2.5nH 3 Self Inductance of Coil 5 10 R5 0.5ohm 1 Resistance of Coil 5 11 L6 3.0nH 3 Self Inductance of Coil 6 12 R6 0.6ohm 1 Resistance of Coil 6 13 K12 0.1 -1 Coupling coefficient - coils 1 and 2 14 K13 -0.1 -1 Coupling coefficient - coils 1 and 3 15 K14 0.2 -1 Coupling coefficient - coils 1 and 4 16 K15 -0.2 -1 Coupling coefficient - coils 1 and 5 17 K16 0.3 -1 Coupling coefficient - coils 1 and 6 18 K23 -0.3 -1 Coupling coefficient - coils 2 and 3 19 K24 0.4 -1 Coupling coefficient - coils 2 and 4 20 K25 -0.4 -1 Coupling coefficient - coils 2 and 5 21 K26 0.5 -1 Coupling coefficient - coils 2 and 6 22 K34 -0.5 -1 Coupling coefficient - coils 3 and 4 23 K35 0.6 -1 Coupling coefficient - coils 3 and 5 24 K36 -0.6 -1 Coupling coefficient - coils 3 and 6 25 K45 0.7 -1 Coupling coefficient - coils 4 and 5 26 K46 -0.7 -1 Coupling coefficient - coils 4 and 6 27 K56 0.8 -1 Coupling coefficient - coils 5 and 6 END_ELEMENT MUC7 MUC7 35 1 L1 0.5nH 3 Self Inductance of Coil 1 2 R1 0.1ohm 1 Resistance of Coil 1 3 L2 1.0nH 3 Self Inductance of Coil 2 4 R2 0.2ohm 1 Resistance of Coil 2 5 L3 1.5nH 3 Self Inductance of Coil 3 6 R3 0.3ohm 1 Resistance of Coil 3 7 L4 2.0nH 3 Self Inductance of Coil 4 8 R4 0.4ohm 1 Resistance of Coil 4 9 L5 2.5nH 3 Self Inductance of Coil 5 10 R5 0.5ohm 1 Resistance of Coil 5 11 L6 3.0nH 3 Self Inductance of Coil 6 12 R6 0.6ohm 1 Resistance of Coil 6 13 L7 3.5nH 3 Self Inductance of Coil 7 14 R7 0.7ohm 1 Resistance of Coil 7 15 K12 0.1 -1 Coupling coefficient - coils 1 and 2 16 K13 -0.1 -1 Coupling coefficient - coils 1 and 3 17 K14 0.2 -1 Coupling coefficient - coils 1 and 4 18 K15 -0.2 -1 Coupling coefficient - coils 1 and 5 19 K16 0.3 -1 Coupling coefficient - coils 1 and 6 20 K17 -0.3 -1 Coupling coefficient - coils 1 and 7 21 K23 0.4 -1 Coupling coefficient - coils 2 and 3 22 K24 -0.4 -1 Coupling coefficient - coils 2 and 4 23 K25 0.5 -1 Coupling coefficient - coils 2 and 5 24 K26 -0.5 -1 Coupling coefficient - coils 2 and 6 25 K27 0.6 -1 Coupling coefficient - coils 2 and 7 26 K34 -0.6 -1 Coupling coefficient - coils 3 and 4 27 K35 0.7 -1 Coupling coefficient - coils 3 and 5 28 K36 -0.7 -1 Coupling coefficient - coils 3 and 6 29 K37 0.8 -1 Coupling coefficient - coils 3 and 7 30 K45 -0.8 -1 Coupling coefficient - coils 4 and 5 31 K46 0.9 -1 Coupling coefficient - coils 4 and 6 32 K47 -0.9 -1 Coupling coefficient - coils 4 and 7 33 K56 0.91 -1 Coupling coefficient - coils 5 and 6 34 K57 -0.91 -1 Coupling coefficient - coils 5 and 7 35 K67 0.92 -1 Coupling coefficient - coils 6 and 7 END_ELEMENT MUC8 MUC8 44 1 L1 0.5nH 3 Self Inductance of Coil 1 2 R1 0.1ohm 1 Resistance of Coil 1 3 L2 1.0nH 3 Self Inductance of Coil 2 4 R2 0.2ohm 1 Resistance of Coil 2 5 L3 1.5nH 3 Self Inductance of Coil 3 6 R3 0.3ohm 1 Resistance of Coil 3 7 L4 2.0nH 3 Self Inductance of Coil 4 8 R4 0.4ohm 1 Resistance of Coil 4 9 L5 2.5nH 3 Self Inductance of Coil 5 10 R5 0.5ohm 1 Resistance of Coil 5 11 L6 3.0nH 3 Self Inductance of Coil 6 12 R6 0.6ohm 1 Resistance of Coil 6 13 L7 3.5nH 3 Self Inductance of Coil 7 14 R7 0.7ohm 1 Resistance of Coil 7 15 L8 4.0nH 3 Self Inductance of Coil 8 16 R8 0.8ohm 1 Resistance of Coil 8 17 K12 0.1 -1 Coupling coefficient - coils 1 and 2 18 K13 -0.1 -1 Coupling coefficient - coils 1 and 3 19 K14 0.2 -1 Coupling coefficient - coils 1 and 4 20 K15 -0.2 -1 Coupling coefficient - coils 1 and 5 21 K16 0.3 -1 Coupling coefficient - coils 1 and 6 22 K17 -0.3 -1 Coupling coefficient - coils 1 and 7 23 K18 0.4 -1 Coupling coefficient - coils 1 and 8 24 K23 -0.4 -1 Coupling coefficient - coils 2 and 3 25 K24 0.5 -1 Coupling coefficient - coils 2 and 4 26 K25 -0.5 -1 Coupling coefficient - coils 2 and 5 27 K26 0.6 -1 Coupling coefficient - coils 2 and 6 28 K27 -0.6 -1 Coupling coefficient - coils 2 and 7 29 K28 0.7 -1 Coupling coefficient - coils 2 and 8 30 K34 -0.7 -1 Coupling coefficient - coils 3 and 4 31 K35 0.8 -1 Coupling coefficient - coils 3 and 5 32 K36 -0.8 -1 Coupling coefficient - coils 3 and 6 33 K37 0.9 -1 Coupling coefficient - coils 3 and 7 34 K38 -0.9 -1 Coupling coefficient - coils 3 and 8 35 K45 0.91 -1 Coupling coefficient - coils 4 and 5 36 K46 -0.91 -1 Coupling coefficient - coils 4 and 6 37 K47 0.92 -1 Coupling coefficient - coils 4 and 7 38 K48 -0.92 -1 Coupling coefficient - coils 4 and 8 39 K56 0.93 -1 Coupling coefficient - coils 5 and 6 40 K57 -0.93 -1 Coupling coefficient - coils 5 and 7 41 K58 0.94 -1 Coupling coefficient - coils 5 and 8 42 K67 -0.94 -1 Coupling coefficient - coils 6 and 7 43 K68 0.95 -1 Coupling coefficient - coils 6 and 8 44 K78 -0.95 -1 Coupling coefficient - coils 7 and 8 END_ELEMENT MUC9 MUC9 54 1 L1 0.5nH 3 Self Inductance of Coil 1 2 R1 0.1ohm 1 Resistance of Coil 1 3 L2 1.0nH 3 Self Inductance of Coil 2 4 R2 0.2ohm 1 Resistance of Coil 2 5 L3 1.5nH 3 Self Inductance of Coil 3 6 R3 0.3ohm 1 Resistance of Coil 3 7 L4 2.0nH 3 Self Inductance of Coil 4 8 R4 0.4ohm 1 Resistance of Coil 4 9 L5 2.5nH 3 Self Inductance of Coil 5 10 R5 0.5ohm 1 Resistance of Coil 5 11 L6 3.0nH 3 Self Inductance of Coil 6 12 R6 0.6ohm 1 Resistance of Coil 6 13 L7 3.5nH 3 Self Inductance of Coil 7 14 R7 0.7ohm 1 Resistance of Coil 7 15 L8 4.0nH 3 Self Inductance of Coil 8 16 R8 0.8ohm 1 Resistance of Coil 8 17 L9 4.5nH 3 Self Inductance of Coil 9 18 R9 0.9ohm 1 Resistance of Coil 9 19 K12 0.1 -1 Coupling coefficient - coils 1 and 2 20 K13 -0.1 -1 Coupling coefficient - coils 1 and 3 21 K14 0.2 -1 Coupling coefficient - coils 1 and 4 22 K15 -0.2 -1 Coupling coefficient - coils 1 and 5 23 K16 0.3 -1 Coupling coefficient - coils 1 and 6 24 K17 -0.3 -1 Coupling coefficient - coils 1 and 7 25 K18 0.4 -1 Coupling coefficient - coils 1 and 8 26 K19 -0.4 -1 Coupling coefficient - coils 1 and 9 27 K23 0.5 -1 Coupling coefficient - coils 2 and 3 28 K24 -0.5 -1 Coupling coefficient - coils 2 and 4 29 K25 0.6 -1 Coupling coefficient - coils 2 and 5 30 K26 -0.6 -1 Coupling coefficient - coils 2 and 6 31 K27 0.7 -1 Coupling coefficient - coils 2 and 7 32 K28 -0.7 -1 Coupling coefficient - coils 2 and 8 33 K29 0.8 -1 Coupling coefficient - coils 2 and 9 34 K34 -0.8 -1 Coupling coefficient - coils 3 and 4 35 K35 0.9 -1 Coupling coefficient - coils 3 and 5 36 K36 -0.9 -1 Coupling coefficient - coils 3 and 6 37 K37 0.91 -1 Coupling coefficient - coils 3 and 7 38 K38 -0.91 -1 Coupling coefficient - coils 3 and 8 39 K39 0.92 -1 Coupling coefficient - coils 3 and 9 40 K45 -0.92 -1 Coupling coefficient - coils 4 and 5 41 K46 0.93 -1 Coupling coefficient - coils 4 and 6 42 K47 -0.93 -1 Coupling coefficient - coils 4 and 7 43 K48 0.94 -1 Coupling coefficient - coils 4 and 8 44 K49 -0.94 -1 Coupling coefficient - coils 4 and 9 45 K56 0.95 -1 Coupling coefficient - coils 5 and 6 46 K57 -0.95 -1 Coupling coefficient - coils 5 and 7 47 K58 0.96 -1 Coupling coefficient - coils 5 and 8 48 K59 -0.96 -1 Coupling coefficient - coils 5 and 9 49 K67 0.97 -1 Coupling coefficient - coils 6 and 7 50 K68 -0.97 -1 Coupling coefficient - coils 6 and 8 51 K69 0.98 -1 Coupling coefficient - coils 6 and 9 52 K78 -0.98 -1 Coupling coefficient - coils 7 and 8 53 K79 0.99 -1 Coupling coefficient - coils 7 and 9 54 K89 -0.99 -1 Coupling coefficient - coils 8 and 9 END_ELEMENT Map1Circle Map1Circle 1 1 Function list(our_map1cir=map1_circle(S,51)) -1 map1_circle(2x2 S_matrix,num_of_pts) END_ELEMENT Map2Circle Map2Circle 1 1 Function list(our_map2cir=map2_circle(S,51)) -1 map2_circle(2x2 S_matrix,num_of_pts) END_ELEMENT Materka_Model Materka_Model 44 1 NFET y_n1 -1 Model Type - YES or NO 2 PFET y_n0 -1 Model Type - YES or NO 3 Idsmod 4 -1 1=CQ 2=CC 3=Statz 4=Materka 5=Tajima 6=symbolic 7=TOM 8=Modified Materka 4 Idss '' 10 Model 4: Idss value, A 5 Vto '' 9 Value of V1 below which Ids = Ids(V1=VTO,Vds), V 6 Alpha '' 9 Saturation voltage, V 7 Beta2 '' -2 Coefficient for pinch-off change with respect to VDS, 1/V 8 Tau '' 6 Transit time under gate, S 9 Lambda '' -1 Channel length modulation parameter, 1/V 10 Rin '' 1 Channel resistance, Ohm 11 Fc '' -1 Coefficient for forward-bias depletion cap. 12 Gscap '' -1 0=none 1=linear 2=junction 3=Statz Charge 5=Statz Cap 13 Cgs '' 4 Zero-bias G-S junction cap., F 14 Gdcap '' -1 0=none 1=linear 2=junction 3=Statz Charge 5=Statz Cap 15 Cgd '' 4 Zero-bias G-D junction cap., F 16 Rd '' 1 Drain ohmic resistance, Ohm 17 Rg '' 1 Gate resistance, Ohm 18 Rs '' 1 Source ohmic resistance, Ohm 19 Ld '' 3 Drain inductance, H 20 Lg '' 3 Gate inductance, H 21 Ls '' 3 Source inductance, H 22 Gsfwd '' -1 0=none 1=linear 2=diode 23 Gsrev '' -1 0=none 1=linear 2=diode 24 Gdfwd '' -1 0=none 1=linear 2=diode 25 Gdrev '' -1 0=none 1=linear 2=diode 26 Vbi '' 9 Built-in gate potential, V 27 Vjr '' 9 Breakdown junction potential, V 28 Is '' 10 Gate junction saturation current, A 29 Ir '' 10 Gate rev saturation current, A 30 Imax '' 10 Explosion current, A 31 N '' -1 Gate Junction emission coefficient 32 Vbr '' 9 Gate junction reverse bias breakdown voltage (0. Means Infinity), V 33 Fnc '' 0 Flicker noise corner frequency 34 R '' -1 Gate noise coefficient 35 P '' -1 Drain noise coefficient 36 C '' -1 Gate-drain noise correlation coefficient. 37 Taumdl y_n0 -1 Use 2nd order Bessel polynomial to model tau effect in transient 38 Tnom '' 12 Nominal ambient temperature, Celsius 39 wVgfwd '' 9 Gate junction forward bias (warning), V 40 wBvgs '' 9 Gate-source reverse breakdown voltage (warning), V 41 wBvgd '' 9 Gate-drain reverse breakdown voltage (warning), V 42 wBvds '' 9 Drain-source breakdown voltage (warning), V 43 wIdsmax '' 10 Maximum drain-source current (warning), A 44 wPmax '' 8 Maximum power dissipation (warning), W END_ELEMENT MaxGain MaxGain 1 1 Function list(our_maxg=max_gain(S)) -1 max_gain(2x2 S_matrix) END_ELEMENT MeasEqn MeasEqn 1 1 Meas list(your_measurement_equation_here) -1 simulation measurement END_ELEMENT Mesfet_Form Mesfet_Form 81 1 NFET 0 -1 Model Type - YES or NO, (default: YES) 2 PFET 0 -1 Model Type - YES or NO, (default: NO ) 3 Idsmod 0 -1 1=CQ 2=CC 3=Statz 4=Materka 5=Tajima 6=symbolic 7=TOM 8=Modified Materka 4 Vto '' 9 Value of V1 below which Ids = Ids(V1=VTO,Vds), V, (default: -2.0) 5 Beta '' -2 Coefficient for pinch-off change with respect to VDS, 1/V, (default: 1.0e-4) 6 Lambda '' -1 Channel length modulation parameter, 1/V, (default: 0.0) 7 Alpha '' -1 Hyperbolic tangent function parameter, 1/V, (default: 2.0) 8 Gamma '' -1 Current saturation parameter, 1/V, (default: 2.0) 9 A0 '' -1 Cubic polynomial IDS Equation Coefficient, A, (default: 0) 10 A1 '' -1 Cubic polynomial IDS Equation Coefficient, A/V, (default: 0) 11 A2 '' -1 Cubic polynomial IDS Equation Coefficient, A/V^2, (default: 0) 12 A3 '' -1 Cubic polynomial IDS Equation Coefficient, A/V^3, (default: 0) 13 Beta2 '' -2 Coefficient for pinch-off change with respect to VDS, 1/V, (default: 0) 14 Rds0 '' 1 DC conductance at Vgs=0, (default: 0) 15 Vds0 '' 9 Output voltage at which A0, A1, A2, A3 were evaluated, V, (default: 0) 16 Vdsdc '' 9 Vds at `rds0 meaured bias, (default: 0) 17 B '' -1 Doping tail extending parameter, (default: 0.3) 18 Vdss '' 9 Model 5: Drain current saturation voltage, V, (default: 1.0) 19 Idss '' 10 Saturation drain current, A, (default: 0) 20 Ta '' -2 Model 5: a coef, (default: -0.2) 21 Tb '' -2 Model 5: b coef, (default: 0.6) 22 Tm '' -2 Model 5: m coef, (default: 3.0) 23 Tau '' 6 Transit time under gate, S, (default: 0.0) 24 A5 '' -1 Time delay proportionality constant for Vds, (default: fixed at 0.0 ) 25 Vcf '' -1 Ids control voltage = vcf(freq) * Vg(s,d)c, (default: Defaults to complex(1.0, 0.0) ) 26 Tnom '' 12 Nominal ambient temperature, Celsius, (default: 25) 27 Idstc '' -1 Ids temperature coefficient, (default: 0.0) 28 Q '' -1 Power law exponent, dimensionless, (default: 2.0) 29 Tqdelta '' -1 drain current thermal factor, (default: 0.0) 30 Tqgamma '' -1 pinch-off change with vds, (default: 0.0) 31 Betatce '' -1 BETA Exponential Temperature Coefficient, %/Degree C, (default: 0.0) 32 Vtotc '' -1 VTO Temperature Coefficient, V/Degree C, (default: 0.0) 33 Gamds '' -1 describes effective pinch-off combined with Vds, (default: -0.01) 34 Ucrit '' -1 Parameter for critical field for mobility degradation, (default: 0.0) 35 Vgexp '' -1 Exponential parameter, (default: 2) 36 Rin '' 1 Channel resistance, Ohm, (default: 0.0) 37 Rgs '' 1 G-S resistance, Ohm, (default: 0.0) 38 Rgd '' 1 Gate Drain resistance, Ohm, (default: 0.0) 39 Rf '' 1 G-S effective forward-bias resistance (0. means infinity), Ohm, (default: 0.0) 40 Vgr '' -1 Vg(s,d)c includes voltage across Rg(s,d), (default: NO) 41 Fc '' -1 Coefficient for forward-bias depletion cap., (default: 0.5) 42 Delta '' -1 Output feedback coefficient, 1/W, (default: 0.2) 43 Gscap '' -1 0=none 1=linear 2=junction 3=Statz Charge 5=Statz Cap, (default: LINEAR_CAP) 44 Cgs '' 4 Zero-bias G-S junction cap., F, (default: 0.0) 45 Gdcap '' -1 0=none 1=linear 2=junction 3=Statz Charge 5=Statz Cap, (default: LINEAR_CAP) 46 Cgd '' 4 Zero-bias G-D junction cap., F, (default: 0.0) 47 Bgf '' -1 Backgate voltage = bgf(freq) * Vds, (default: defaulted to complex zero ) 48 Tqm '' -1 Temperature coefficient for triquint junction capacitance, (default: 0.2) 49 Vmax '' 9 Maximum junction voltage before capacitance limiting, (default: 0.5) 50 Rg '' 1 Gate resistance, Ohm, (default: fixed at zero ) 51 Rd '' 1 Drain ohmic resistance, Ohm, (default: fixed at zero ) 52 Rs '' 1 Source ohmic resistance, Ohm, (default: fixed at zero ) 53 Lg '' 3 Gate inductance, H, (default: fixed at 0.0 ) 54 Ld '' 3 Drain inductance, H, (default: fixed at 0.0 ) 55 Ls '' 3 Source inductance, H, (default: fixed at 0.0 ) 56 Cds '' 4 Drain-source cap., F, (default: 0.0) 57 Crf '' 4 Used with RDS to model freq. dependent output conductance, F, (default: 0.0) 58 Rc '' 1 Used with CRF to model freq. dependent output conductance (0. means infinity), Ohm, (default: 0.0) 59 Trg1 '' -1 Linear temperature coefficient for RG 1/degC, (default: 0.0 ) 60 Trd1 '' -1 Linear temperature coefficient for RD 1/degC, (default: 0.0 ) 61 Trs1 '' -1 Linear temperature coefficient for RS 1/degC, (default: 0.0 ) 62 Gsfwd '' -1 0=none 1=linear 2=diode, (default: linear) 63 Gsrev '' -1 0=none 1=linear 2=diode, (default: none) 64 Gdfwd '' -1 0=none 1=linear 2=diode, (default: none) 65 Gdrev '' -1 0=none 1=linear 2=diode, (default: linear) 66 R1 '' 1 Approximate breakdown resistance (0. means infinity), Ohm, (default: 0.0) 67 R2 '' 1 Resistance relating breakdown voltage to channel currents, Ohm, (default: fixed at 0.0 (infinity) ) 68 Vbi '' 9 Built-in gate potential, V, (default: 0.85) 69 Vbr '' 9 Gate junction reverse bias breakdown voltage (0. Means Infinity), V, (default: 1e100) 70 Vjr '' 9 Breakdown junction potential, (default: 0.025) 71 Is '' 10 Gate junction saturation current, A, (default: 1.0e-14) 72 Ir '' 10 Gate rev saturation current, A, (default: 1.0e-14) 73 Imax '' 10 Explosion current, A, (default: 1.6) 74 Xti '' -1 Saturation Current Temperature Exponent, (default: 3.0) 75 Eg '' -1 Energy Gap for Temperature Effect on IS, (default: 1.11) 76 N '' -1 Gate Junction emission coefficient, (default: 1) 77 Fnc '' 0 Flicker noise corner frequency, Hertz (default: 0.0) 78 R '' -1 Gate noise coefficient, (default: 0.5 ) 79 P '' -1 Drain noise coefficient, (default: 1.0) 80 C '' -1 Gate-drain noise correlation coefficient., (default: 0.9) 81 AllParams '' -1 Data Access Component (DAC) Based Parameters END_ELEMENT Mixer Mixer 27 1 SideBand UPPER -1 Produce UPPER, LOWER, or BOTH Sidebands at Output Port 2 ImageRej '' 13 Image Rejection in dB at Output Port 3 LO_Rej1 '' 13 LO to Input Port Rejection in dB 4 LO_Rej2 '' 13 LO to Output Port Rejection in dB 5 RF_Rej '' 13 Input to Output Port Rejection in dB 6 ConvGain dbpolar(0,0) -1 Conversion Gain, use x+j*y, polar(x,y), dbpolar(x,y) for complex value 7 S11 polar(0,0) -1 Forward Reflection Coefficient, use x+j*y, polar(x,y), dbpolar(x,y), VSWRpolar(x,y) for complex value 8 S22 0+j*0 -1 Reverse Reflection Coefficient, use x+j*y, polar(x,y), dbpolar(x,y), VSWRpolar(x,y) for complex value 9 S33 0. -1 LO Port Reflection Coefficient, use x+j*y, polar(x,y), dbpolar(x,y), VSWRpolar(x,y) for complex value 10 PminLO '' -1 Minimum LO Power in dBm before Starvation 11 NF '' 13 Noise Figure in dB 12 NFmin '' 13 Minimum Noise Figure at Sopt in dB 13 Sopt '' -1 Optimum Source Reflection for Minimum Noise Figure, use x+j*y, polar(x,y), dbpolar(x,y) for complex value 14 Rn '' 1 Equivalent Noise Resistance 15 Z1 '' 1 Reference Impedance for Port1 16 Z2 '' 1 Reference Impedance for Port2 17 Z3 '' 1 Reference Impedance for Port3 18 GainCompType LIST -1 Gain Compression Type, parameters from following LIST or in FILE 19 GainCompFreq '' 0 Frequency at which Gain Compression is specified 20 ReferToInput OUTPUT -1 Power Levels refer to INPUT or OUTPUT 21 SOI '' -1 Second Order Intercept in dBm 22 TOI '' -1 Third Order Intercept in dBm 23 Psat '' -1 Power Saturation Point in dBm 24 GainCompSat '' 13 Gain Compression at PSat in dB 25 GainCompPower '' -1 Power Level in dBm at Gain Compression Specified by GainComp 26 GainComp 1.dB 13 Gain Compression in dB at GainCompPower 27 GainCompFile '' -2 Filename for Gain Compression Data END_ELEMENT MixerIMT MixerIMT 15 1 SS_SideBand UPPER -1 Produce UPPER or LOWER Sideband at Output Port For Linear Analysis 2 ConvGain dbpolar(0,0) -1 Conversion Gain, use x+j*y, polar(x,y), dbpolar(x,y) for complex value 3 S11 polar(0,0) -1 Forward Reflection Coefficient, use x+j*y, polar(x,y), dbpolar(x,y), VSWRpolar(x,y) for complex value 4 S22 0+j*0 -1 Reverse Reflection Coefficient, use x+j*y, polar(x,y), dbpolar(x,y), VSWRpolar(x,y) for complex value 5 S33 0. -1 LO Port Reflection Coefficient, use x+j*y, polar(x,y), dbpolar(x,y), VSWRpolar(x,y) for complex value 6 NF '' 13 Noise Figure in dB 7 NFmin '' 13 Minimum Noise Figure at Sopt in dB 8 Sopt '' -1 Optimum Source Reflection for Minimum Noise Figure, use x+j*y, polar(x,y), dbpolar(x,y) for complex value 9 Rn '' 1 Equivalent Noise Resistance 10 R1 50.ohm 1 Reference Resistance for Port1 11 R2 50.ohm 1 Reference Resistance for Port2 12 R3 50.ohm 1 Reference Resistance for Port3 13 InThresh '' 9 Voltage Threshold for Input RF 14 LoThresh '' 9 Voltage Threshold for Input LO 15 IMT_File '' -2 Filename Containing the Intermodulation Table END_ELEMENT Modified_Materka_Model Modified_Materka_Model 49 1 NFET y_n1 -1 Model Type - YES or NO 2 PFET y_n0 -1 Model Type - YES or NO 3 Idsmod 8 -1 1=CQ 2=CC 3=Statz 4=Materka 5=Tajima 6=symbolic 7=TOM 8=Modified Materka 4 Idss '' 10 Model 4: Idss value, A 5 Vto '' 9 Value of V1 below which Ids = Ids(V1=VTO,Vds), V 6 Beta2 '' -2 Coefficient for pinch-off change with respect to VDS, 1/V 7 Ee '' -2 Exponent defining dependence of saturation current 8 Ke '' 9 Parameter describing dependence on gate voltage, V 9 Kg '' 9 Dependence on vgs of drain slope in linear region, V 10 Sl '' -2 Linear region slope of vgs=0 drain characteristic 11 Ss '' -2 Saturation region drain slope characteristic at vgs=0 12 Tau '' 6 Transit time under gate, S 13 Rgs '' 1 Channel resistance, Ohm 14 Rgd '' 1 Gate Drain resistance, Ohm 15 Fc '' -1 Coefficient for forward-bias depletion cap. 16 Gscap '' -1 0=none 1=linear 2=junction 3=Statz Charge 5=Statz Cap 17 Cgs '' 4 Zero-bias G-S junction cap., F 18 Gdcap '' -1 0=none 1=linear 2=junction 3=Statz Charge 5=Statz Cap 19 Cgd '' 4 Zero-bias G-D junction cap., F 20 Rd '' 1 Drain ohmic resistance, Ohm 21 Rg '' 1 Gate resistance, Ohm 22 Rs '' 1 Source ohmic resistance, Ohm 23 Ld '' 3 Drain inductance, H 24 Lg '' 3 Gate inductance, H 25 Ls '' 3 Source inductance, H 26 Cds '' 4 Drain-source cap., F 27 Gsfwd '' -1 0=none 1=linear 2=diode 28 Gsrev '' -1 0=none 1=linear 2=diode 29 Gdfwd '' -1 0=none 1=linear 2=diode 30 Gdrev '' -1 0=none 1=linear 2=diode 31 Vbi '' 9 Built-in gate potential, V 32 Vjr '' 9 Breakdown junction potential, V 33 Is '' 10 Gate junction saturation current, A 34 Ir '' 10 Gate rev saturation current, A 35 Imax '' 10 Explosion current, A 36 N '' -1 Gate Junction emission coefficient 37 Fnc '' 0 Flicker noise corner frequency 38 Lambda '' -1 Channel length modulation parameter, 1/V 39 Vbr '' 9 Gate junction reverse bias breakdown voltage (0. Means Infinity), V 40 R '' -1 Gate noise coefficient 41 P '' -1 Drain noise coefficient 42 C '' -1 Gate-drain noise correlation coefficient. 43 Taumdl y_n0 -1 Use 2nd order Bessel polynomial to model tau effect in transient 44 wVgfwd '' 9 Gate junction forward bias (warning), V 45 wBvgs '' 9 Gate-source reverse breakdown voltage (warning), V 46 wBvgd '' 9 Gate-drain reverse breakdown voltage (warning), V 47 wBvds '' 9 Drain-source breakdown voltage (warning), V 48 wIdsmax '' 10 Maximum drain-source current (warning), A 49 wPmax '' 8 Maximum power dissipation (warning), W END_ELEMENT Mu Mu 1 1 Function list(our_mu=mu(S)) -1 mu(2x2 S_matrix) END_ELEMENT MuPrime MuPrime 1 1 Function list(our_mup=mu_prime(S)) -1 mu_prime(2x2 S_matrix) END_ELEMENT Mutual Mutual 4 1 K 0.5 -1 Mutual inductor coupling coefficient; -1.0<= k <=1.0 2 M '' 3 Mutual inductance 3 Inductor1 '' -2 ID of Inductor one name 4 Inductor2 '' -2 ID of Inductor two name END_ELEMENT N_StateDemod N_StateDemod 2 1 Fnom 1GHz 0 Nominal Input Frequency 2 StateArray list(1+j,-1+j,-1-j,1-j) -1 Complex Array of State Values END_ELEMENT N_StateMod N_StateMod 4 1 MaxStates 4 -1 Maximum Number of Input States 2 StateArray list(1+j,-1+j,-1-j,1-j) -1 Complex Array of State Values 3 Fnom 1GHz 0 Nominal Input Frequency 4 Rout 50ohm 1 Output Resistance END_ELEMENT NodeSet NodeSet 2 1 V 0V 9 Initial node voltage 2 R '' 1 Connection resistance END_ELEMENT NodeSetByName NodeSetByName 1 1 NodeName list(prm("NodeSetForm",,0V,)) -1 NodeName/Inital voltage/Connection resistance END_ELEMENT NoiseCorr NoiseCorr 3 1 CorrCoeff 0.5 -1 Correlation Coefficient 2 Source1 '' -1 Source 1 name 3 Source2 '' -1 Source 2 name END_ELEMENT Noisy2Port Noisy2Port 3 1 NFmin 1dB 13 Minimum noise figure 2 Rn 50ohm 1 Noise resistance 3 Sopt 0.0 -1 Optimum match for minimum noise figure END_ELEMENT NonlinC NonlinC 1 1 Coeff list(1,1) -1 List of coefficients that describe a polynomial END_ELEMENT NonlinCCCS NonlinCCCS 1 1 Coeff list(1,1) -1 List of coefficients that describe a polynomial END_ELEMENT NonlinCCVS NonlinCCVS 1 1 Coeff list(1,1) -1 List of coefficients that describe a polynomial END_ELEMENT NonlinL NonlinL 1 1 Coeff list(1,1) -1 List of coefficients that describe a polynomial END_ELEMENT NonlinVCCS NonlinVCCS 1 1 Coeff list(1,1) -1 List of coefficients that describe a polynomial END_ELEMENT NonlinVCVS NonlinVCVS 1 1 Coeff list(1,1) -1 List of coefficients that describe a polynomial END_ELEMENT NsCircle NsCircle 1 1 Function list(our_nscir=ns_circle(nf1,NFmin,Sopt,Rn,51)) -1 ns_circle(2x2 S_matrix,num_of_pts) END_ELEMENT NsPwrInt NsPwrInt 1 1 Function list(our_nsint=ns_pwr_int(S21,nf1,1GHz)) -1 ns_pwr_int(complex_transmission_coeff,noise_figure,res_BW) END_ELEMENT NsPwrRefBW NsPwrRefBW 1 1 Function list(our_nsbw=ns_pwr_ref_bw(S21,nf1,1GHz)) -1 ns_pwr_ref_bw(complex_transmission_coeff,noise_figure,res_BW) END_ELEMENT OpAmp OpAmp 21 1 Gain 100.dB 13 Open loop DC power gain of amplifier in dB 2 CMR '' 13 Common mode rejection ratio in dB 3 Rout 100.ohm 1 Output resistance 4 RDiff 1.Mohm 1 Differential input resistance 5 CDiff 0.F 4 Differential input capacitance 6 RCom 1.Mohm 1 common mode input resistance 7 CCom 0.F 4 Common mode input capacitance 8 SlewRate 1.e+6 -1 Signal slew rate in Volts/sec 9 IOS 0.A 10 Input offset current 10 VOS 0.V 9 Input offset voltage 11 BW 1.MHz 0 Unity gain bandwidth 12 Pole1 '' 0 Dominant pole frequency(overides BW) 13 Pole2 '' 0 Additional higher order pole frequency 14 Pole3 '' 0 Additional higher order pole frequency 15 Pole4 '' 0 Additional higher order pole frequency 16 Pole5 '' 0 Additional higher order pole frequency 17 Zero1 '' 0 Feedforward zero frequency 18 Inoise 0. -1 Input spectral noise current in Amperes/sqrt(Hz) 19 Vnoise 0. -1 Input spectral noise voltage in Volts/sqrt(Hz) 20 VEE -15.V 9 Negative supply voltage 21 VCC 15.V 9 Positive supply voltage END_ELEMENT OpAmpIdeal OpAmpIdeal 7 1 Gain 1. -1 Magnitude of Open Loop DC Voltage Gain, use x+j*y, polar(x,y), dbpolar(x,y) for complex value 2 Z1 '' 1 Input Impedance, Inverting Terminal 3 Z2 '' 1 Input Impedance, non-inverting Terminal 4 Z3 '' 1 Output Impedance 5 Z4 '' 1 Leakage Impedance, Inverting to Non-Inverting Terminal 6 Freq3db '' 0 Frequency at Which Gain Magnitude is Down by 3dB 7 Delay 0.sec 6 Time Delay Associated with Gain END_ELEMENT Optim Optim 12 1 OptimType random -1 Type of minimization method to use: gucker, hp_vmo, sga_sp... 2 ErrorForm L2 -1 Error function formulation: L1, L2, mm, neg_L2... 3 MaxIters '' -1 Maximum number of iterations/trials for the gradient/random optimizers respectively 4 P '' -1 Order of optimization norm 5 DesiredError '' -1 Maximum acceptable error function 6 StatusLevel '' -1 Degree of annotation 7 SetBestValues No -1 Keep best values for parent optimization. 8 Seed '' -1 Seed for random optimizer 9 SaveSolns No -1 Flag to send analysis solutions to dataset 10 SaveOptimVars No -1 Send opt var values to dataset 11 SaveGoals No -1 Send optgoal values to dataset 12 GoalName '' -1 Name of goal(s) to use in optimization (repeatable) END_ELEMENT Options Options 25 1 Temp 25C 12 Temperature 2 TopologyCheck yes -2 Check circuit topology for degeneracies 3 ForceS_Params yes -2 Force S-parameter calculations where ever possible 4 MaxSpectralSize 512 -1 Maximum spectral array manager allocation size 5 MaxDeltaV '' 9 Maximum voltage step in DC analysis 6 DC_ConvMode '' -1 Convergence mode for DC analysis 7 V_RelTol 1e-6 -1 Relative voltage convergence criterion 8 V_AbsTol '' 9 Absolute voltage convergence criterion 9 I_RelTol 1e-6 -1 Relative current convergence criterion 10 I_AbsTol '' 10 Absolute current convergence criterion 11 FreqRelTol '' -1 Relative frequency convergence criterion 12 FreqAbsTol '' 0 Absolute frequency convergence criterion 13 GiveAllWarnings yes -2 Give all warning messages 14 MaxWarnings 10 -1 Maximum number of warning messages 15 IgnoreShorts '' -2 Silently ignore shorted device 16 SaveBranchCurrents no -2 Send all branch currents to raw-file 17 OutputInternalNodes no -2 Output internal node voltages 18 PivotRelThresh '' -1 Relative pivot threshold 19 PivotAbsThresh '' -1 Absolute pivot threshold 20 Vmin '' 9 Minimum voltage present in circuit 21 Vmax '' 9 Maximum voltage present in circuit 22 MinEpsilon '' -1 Minimum epsilon in finite difference calculations 23 ForceM_Params yes -2 Use M-parameter (RLCG) calculations wherever possible 24 TimeStep '' 6 Timestep value for steady-state analyses 25 Other '' -1 Output string to netlist END_ELEMENT OscPort OscPort 6 1 V '' 9 Initial guess at fundamental voltage 2 Z 1.1ohm 1 Initial value for Z0 3 NumOctaves 2 -1 Number of octaves to search 4 Steps 10 -1 Number of steps per search octave 5 FundIndex 1 -1 Fundamental number for oscillator 6 MaxLoopGainStep '' -1 Maximum arc length continuation step size during loop-gain search END_ELEMENT OscTest OscTest 5 1 Port_Number 1 -1 Number of Port 2 Z 1.1ohm 1 Initial value for Z0 3 Start 1.0GHz 0 Start frequency 4 Stop 10.0GHz 0 Stop frequency 5 Points 101 -1 Number of frequency Points END_ELEMENT P2D P2D 61 1 MaxOrder 4 -1 Maximum combined order to be considered 2 Freq '' 0 Frequency of fundamental 3 Order 3 -1 Maximum order of fundamental to be considered 4 NestLevel 2 -1 Levels of subcircuits to output 5 StatusLevel 2 -1 Degree of annotation 6 FundOversample 1 -1 Oversampling ratio for FFT 7 Oversample '' -1 Oversampling ratio for FFT 8 PackFFT '' -1 Pack FFT in multi-tone analysis 9 MaxIters 10 -1 Max number of iterations 10 GuardThresh '' -1 Guard threshold 11 SamanskiiConstant 2 -1 Samanskii constant 12 Restart No -1 Do not use last solution as initial guess 13 ArcLevelMaxStep 0.0 -1 Maximum arc-length step for source-level continuation 14 MaxStepRatio 100 -1 Ratio of maximum to given number of steps 15 MaxShrinkage 1.0e-5 -1 Maximum step shrinkage 16 OutputAllSolns '' -1 Output spectra at all computed steps when sweeping 17 ArcMaxStep 0.0 -1 Maximum arc-length step 18 ArcMinValue '' -1 Minimum value for parameter during arclength continuation 19 ArcMaxValue '' -1 Maximum value for parameter during arclength continuation 20 UseKrylov '' -1 Use Krylov solver 21 UseInitialAWHB '' -1 Use initial AWHB stage before Krylov 22 AWHB_WindowSize '' -1 AWHB window size 23 GMRES_Restart '' -1 GMRES iterations before auto-restart 24 KrylovUsePacking '' -1 Use Krylov spectral packing 25 KrylovPackingThresh '' -1 Krylov bandwidth threshold 26 KrylovTightTol '' -1 GMRES tolerance 27 KrylovLooseTol '' -1 Loose tolerance for Krylov loop 28 KrylovLooseIters '' -1 Min number of iterations to invoke loose tolerance 29 KrylovMaxIters '' -1 Maximum number of GMRES iterations 30 GMRES_Orthog '' -1 Re-orthogonalize at every GMRES iteration 31 CalcS_Params Yes -1 Calculate large-signal S-params 32 P2D_FileName default.p2d -1 Name for P2D file 33 SweepVar P2D_Freq -1 Name of variable or parameter to be swept 34 UseSweepPlan '' -1 Flag to indicate use of Frequency SweepPlan 35 LSSP_FreqPlan '' -1 Instance/path name for frequency sweep values for P2D files 36 Freq_Start 1.0GHz 0 Start frequency 37 Freq_Stop 10.0GHz 0 Stop frequency 38 Freq_Step 1.0GHz 0 Step frequency 39 Freq_Center '' 0 Center frequency 40 Freq_Span '' 0 Span 41 Freq_Lin '' -1 Linear sweep 42 Freq_Dec '' -1 Number of points per decade 43 Freq_Log '' -1 Log sweep 44 Freq_Reverse '' -1 Reverse sweep 45 Freq_Pt '' 0 Frequency value if its not being swept 46 Freq_Sort 'LINEAR START STEP' -1 Sort frequencies 47 Power_SweepVar power -1 Name of variable or parameter to be swept 48 Power_UseSweepPlan '' -1 Flag to indicate use of power SweepPlan 49 LSSP_PowerPlan '' -1 Instance/path name for power sweep values for P2D files 50 Power_Start -20 -1 Start value for power in dBm 51 Power_Stop 0 -1 Stop value for power in dBm 52 Power_Step 1 -1 Step value for power in dBm 53 Power_Center '' -1 Center value for power in dBm 54 Power_Span '' 8 Span for power 55 Power_Lin '' -1 Linear sweep for power 56 Power_Dec '' -1 Number of points per decade for power 57 Power_Log '' -1 Log sweep for power 58 Power_Reverse '' -1 Reverse sweep for power 59 Power_Pt '' 0 Single point for power 60 Power_Sort 'LINEAR START STEP' -1 Sort power 61 Other '' -1 Output string to netlist END_ELEMENT PAE PAE 1 1 Function list(our_pae=pae(vout,0,vin,0,vdc,0,I_Probe1.i,I_Probe2.i,I_Probe3.i,{1},{1})) -1 pae(vPlusOut,vMinusOut,vPlusIn,vMinusIn,vPlusDC,vMinusDC,currentOut,currentIn,currentDC,outFreq,inFreq) END_ELEMENT PCBEND PCBEND 6 1 Subst PCSub1 -1 Substrate instance name 2 W 25.0mils 5 Conductor width 3 CLayer 1 -1 Conductor layer number 4 Angle 90deg 7 Angle of bend 5 M 0.6 -1 Miter fraction 6 Temp '' 12 Physical temperature END_ELEMENT PCCORN PCCORN 4 1 Subst PCSub1 -1 Substrate instance name 2 W 10.0mils 5 Conductor width 3 CLayer 1 -1 Conductor layer number 4 Temp '' 12 Physical temperature END_ELEMENT PCCROS PCCROS 7 1 Subst PCSub1 -1 Substrate instance name 2 W1 10.0mils 5 Width at pin 1 3 W2 10.0mils 5 Width at pin 2 4 W3 10.0mils 5 Width at pin 3 5 W4 10.0mils 5 Width at pin 4 6 CLayer 1 -1 Conductor layer number 7 Temp '' 12 Physical temperature END_ELEMENT PCCURVE PCCURVE 6 1 Subst PCSub1 -1 Substrate instance name 2 W 25.0mils 5 Conductor width 3 CLayer 1 -1 Conductor layer number 4 Angle -90deg 7 Angle subtended by the bend 5 Radius 100.0mils 5 Radius (measured to center of conductor) 6 Temp '' 12 Physical temperature END_ELEMENT PCILC PCILC 9 1 Subst PCSub1 -1 Substrate instance name 2 D 10.0mils 5 Diameter of via hole 3 CLayer1 1 -1 Conductor layer number at pin 1 4 CLayer2 2 -1 Conductor layer number at pin 2 5 Temp '' 12 Physical temperature 6 Ang 90deg 7 (for Layout option) Angle of orientation at pin 2 7 W1 10.0mils 5 (for Layout option) Width of square pad or diameter of circular pad on layer CLayer1 8 W2 10.0mils 5 (for Layout option) Width of square pad or diameter of circular pad on layer CLayer2 9 Type pcilc_square -1 (for Layout option) Type of Via pad, square or circular END_ELEMENT PCLIN1 PCLIN1 6 1 Subst PCSub1 -1 Substrate instance name 2 W 10.0mils 5 Width of line 3 S1 100.0mils 5 Distance from line to left wall 4 CLayer1 1 -1 Conductor layer number 5 L 25.0mils 5 Length of line 6 Temp '' 12 Physical temperature END_ELEMENT PCLIN10 PCLIN10 33 1 Subst PCSub1 -1 Substrate instance name 2 W1 10.0mils 5 Width of line #1 3 S1 100.0mils 5 Distance from line #1 to left wall 4 CLayer1 1 -1 Conductor layer number - line #1 5 W2 10.0mils 5 Width of line #2 6 S2 115.0mils 5 Distance from line #2 to left wall 7 CLayer2 1 -1 Conductor layer number - line #2 8 W3 10.0mils 5 Width of line #3 9 S3 130.0mils 5 Distance from line #3 to left wall 10 CLayer3 1 -1 Conductor layer number - line #3 11 W4 10.0mils 5 Width of line #4 12 S4 145.0mils 5 Distance from line #4 to left wall 13 CLayer4 1 -1 Conductor layer number - line #4 14 W5 10.0mils 5 Width of line #5 15 S5 160.0mils 5 Distance from line #5 to left wall 16 CLayer5 1 -1 Conductor layer number - line #5 17 W6 10.0mils 5 Width of line #6 18 S6 175.0mils 5 Distance from line #6 to left wall 19 CLayer6 1 -1 Conductor layer number - line #6 20 W7 10.0mils 5 Width of line #7 21 S7 190.0mils 5 Distance from line #7 to left wall 22 CLayer7 1 -1 Conductor layer number - line #7 23 W8 10.0mils 5 Width of line #8 24 S8 205.0mils 5 Distance from line #8 to left wall 25 CLayer8 1 -1 Conductor layer number - line #8 26 W9 10.0mils 5 Width of line #9 27 S9 220.0mils 5 Distance from line #9 to left wall 28 CLayer9 1 -1 Conductor layer number - line #9 29 W10 10.0mils 5 Width of line #10 30 S10 235.0mils 5 Distance from line #10 to left wall 31 CLayer10 1 -1 Conductor layer number - line #10 32 L 25.0mils 5 Length of the lines 33 Temp '' 12 Physical temperature END_ELEMENT PCLIN2 PCLIN2 9 1 Subst PCSub1 -1 Substrate instance name 2 W1 10.0mils 5 Width of line #1 3 S1 100.0mils 5 Distance from line #1 to left wall 4 CLayer1 1 -1 Conductor layer number - line #1 5 W2 10.0mils 5 Width of line #2 6 S2 115.0mils 5 Distance from line #2 to left wall 7 CLayer2 1 -1 Conductor layer number - line #2 8 L 25.0mils 5 Length of the lines 9 Temp '' 12 Physical temperature END_ELEMENT PCLIN3 PCLIN3 12 1 Subst PCSub1 -1 Substrate instance name 2 W1 10.0mils 5 Width of line #1 3 S1 100.0mils 5 Distance from line #1 to left wall 4 CLayer1 1 -1 Conductor layer number - line #1 5 W2 10.0mils 5 Width of line #2 6 S2 115.0mils 5 Distance from line #2 to left wall 7 CLayer2 1 -1 Conductor layer number - line #2 8 W3 10.0mils 5 Width of line #3 9 S3 130.0mils 5 Distance from line #3 to left wall 10 CLayer3 1 -1 Conductor layer number - line #3 11 L 25.0mils 5 Length of the lines 12 Temp '' 12 Physical temperature END_ELEMENT PCLIN4 PCLIN4 15 1 Subst PCSub1 -1 Substrate instance name 2 W1 10.0mils 5 Width of line #1 3 S1 100.0mils 5 Distance from line #1 to left wall 4 CLayer1 1 -1 Conductor layer number - line #1 5 W2 10.0mils 5 Width of line #2 6 S2 115.0mils 5 Distance from line #2 to left wall 7 CLayer2 1 -1 Conductor layer number - line #2 8 W3 10.0mils 5 Width of line #3 9 S3 130.0mils 5 Distance from line #3 to left wall 10 CLayer3 1 -1 Conductor layer number - line #3 11 W4 10.0mils 5 Width of line #4 12 S4 145.0mils 5 Distance from line #4 to left wall 13 CLayer4 1 -1 Conductor layer number - line #4 14 L 25.0mils 5 Length of the lines 15 Temp '' 12 Physical temperature END_ELEMENT PCLIN5 PCLIN5 18 1 Subst PCSub1 -1 Substrate instance name 2 W1 10.0mils 5 Width of line #1 3 S1 100.0mils 5 Distance from line #1 to left wall 4 CLayer1 1 -1 Conductor layer number - line #1 5 W2 10.0mils 5 Width of line #2 6 S2 115.0mils 5 Distance from line #2 to left wall 7 CLayer2 1 -1 Conductor layer number - line #2 8 W3 10.0mils 5 Width of line #3 9 S3 130.0mils 5 Distance from line #3 to left wall 10 CLayer3 1 -1 Conductor layer number - line #3 11 W4 10.0mils 5 Width of line #4 12 S4 145.0mils 5 Distance from line #4 to left wall 13 CLayer4 1 -1 Conductor layer number - line #4 14 W5 10.0mils 5 Width of line #5 15 S5 160.0mils 5 Distance from line #5 to left wall 16 CLayer5 1 -1 Conductor layer number - line #5 17 L 25.0mils 5 Length of the lines 18 Temp '' 12 Physical temperature END_ELEMENT PCLIN6 PCLIN6 21 1 Subst PCSub1 -1 Substrate instance name 2 W1 10.0mils 5 Width of line #1 3 S1 100.0mils 5 Distance from line #1 to left wall 4 CLayer1 1 -1 Conductor layer number - line #1 5 W2 10.0mils 5 Width of line #2 6 S2 115.0mils 5 Distance from line #2 to left wall 7 CLayer2 1 -1 Conductor layer number - line #2 8 W3 10.0mils 5 Width of line #3 9 S3 130.0mils 5 Distance from line #3 to left wall 10 CLayer3 1 -1 Conductor layer number - line #3 11 W4 10.0mils 5 Width of line #4 12 S4 145.0mils 5 Distance from line #4 to left wall 13 CLayer4 1 -1 Conductor layer number - line #4 14 W5 10.0mils 5 Width of line #5 15 S5 160.0mils 5 Distance from line #5 to left wall 16 CLayer5 1 -1 Conductor layer number - line #5 17 W6 10.0mils 5 Width of line #6 18 S6 175.0mils 5 Distance from line #6 to left wall 19 CLayer6 1 -1 Conductor layer number - line #6 20 L 25.0mils 5 Length of the lines 21 Temp '' 12 Physical temperature END_ELEMENT PCLIN7 PCLIN7 24 1 Subst PCSub1 -1 Substrate instance name 2 W1 10.0mils 5 Width of line #1 3 S1 100.0mils 5 Distance from line #1 to left wall 4 CLayer1 1 -1 Conductor layer number - line #1 5 W2 10.0mils 5 Width of line #2 6 S2 115.0mils 5 Distance from line #2 to left wall 7 CLayer2 1 -1 Conductor layer number - line #2 8 W3 10.0mils 5 Width of line #3 9 S3 130.0mils 5 Distance from line #3 to left wall 10 CLayer3 1 -1 Conductor layer number - line #3 11 W4 10.0mils 5 Width of line #4 12 S4 145.0mils 5 Distance from line #4 to left wall 13 CLayer4 1 -1 Conductor layer number - line #4 14 W5 10.0mils 5 Width of line #5 15 S5 160.0mils 5 Distance from line #5 to left wall 16 CLayer5 1 -1 Conductor layer number - line #5 17 W6 10.0mils 5 Width of line #6 18 S6 175.0mils 5 Distance from line #6 to left wall 19 CLayer6 1 -1 Conductor layer number - line #6 20 W7 10.0mils 5 Width of line #7 21 S7 190.0mils 5 Distance from line #7 to left wall 22 CLayer7 1 -1 Conductor layer number - line #7 23 L 25.0mils 5 Length of the lines 24 Temp '' 12 Physical temperature END_ELEMENT PCLIN8 PCLIN8 27 1 Subst PCSub1 -1 Substrate instance name 2 W1 10.0mils 5 Width of line #1 3 S1 100.0mils 5 Distance from line #1 to left wall 4 CLayer1 1 -1 Conductor layer number - line #1 5 W2 10.0mils 5 Width of line #2 6 S2 115.0mils 5 Distance from line #2 to left wall 7 CLayer2 1 -1 Conductor layer number - line #2 8 W3 10.0mils 5 Width of line #3 9 S3 130.0mils 5 Distance from line #3 to left wall 10 CLayer3 1 -1 Conductor layer number - line #3 11 W4 10.0mils 5 Width of line #4 12 S4 145.0mils 5 Distance from line #4 to left wall 13 CLayer4 1 -1 Conductor layer number - line #4 14 W5 10.0mils 5 Width of line #5 15 S5 160.0mils 5 Distance from line #5 to left wall 16 CLayer5 1 -1 Conductor layer number - line #5 17 W6 10.0mils 5 Width of line #6 18 S6 175.0mils 5 Distance from line #6 to left wall 19 CLayer6 1 -1 Conductor layer number - line #6 20 W7 10.0mils 5 Width of line #7 21 S7 190.0mils 5 Distance from line #7 to left wall 22 CLayer7 1 -1 Conductor layer number - line #7 23 W8 10.0mils 5 Width of line #8 24 S8 205.0mils 5 Distance from line #8 to left wall 25 CLayer8 1 -1 Conductor layer number - line #8 26 L 25.0mils 5 Length of the lines 27 Temp '' 12 Physical temperature END_ELEMENT PCLIN9 PCLIN9 30 1 Subst PCSub1 -1 Substrate instance name 2 W1 10.0mils 5 Width of line #1 3 S1 100.0mils 5 Distance from line #1 to left wall 4 CLayer1 1 -1 Conductor layer number - line #1 5 W2 10.0mils 5 Width of line #2 6 S2 115.0mils 5 Distance from line #2 to left wall 7 CLayer2 1 -1 Conductor layer number - line #2 8 W3 10.0mils 5 Width of line #3 9 S3 130.0mils 5 Distance from line #3 to left wall 10 CLayer3 1 -1 Conductor layer number - line #3 11 W4 10.0mils 5 Width of line #4 12 S4 145.0mils 5 Distance from line #4 to left wall 13 CLayer4 1 -1 Conductor layer number - line #4 14 W5 10.0mils 5 Width of line #5 15 S5 160.0mils 5 Distance from line #5 to left wall 16 CLayer5 1 -1 Conductor layer number - line #5 17 W6 10.0mils 5 Width of line #6 18 S6 175.0mils 5 Distance from line #6 to left wall 19 CLayer6 1 -1 Conductor layer number - line #6 20 W7 10.0mils 5 Width of line #7 21 S7 190.0mils 5 Distance from line #7 to left wall 22 CLayer7 1 -1 Conductor layer number - line #7 23 W8 10.0mils 5 Width of line #8 24 S8 205.0mils 5 Distance from line #8 to left wall 25 CLayer8 1 -1 Conductor layer number - line #8 26 W9 10.0mils 5 Width of line #9 27 S9 220.0mils 5 Distance from line #9 to left wall 28 CLayer9 1 -1 Conductor layer number - line #9 29 L 25.0mils 5 Length of the lines 30 Temp '' 12 Physical temperature END_ELEMENT PCSTEP PCSTEP 5 1 Subst PCSub1 -1 Substrate instance name 2 W1 25.0mils 5 Conductor width at pin 1 3 W2 15.0mils 5 Conductor width at pin 2 4 CLayer 1 -1 Conductor layer number 5 Temp '' 12 Physical temperature END_ELEMENT PCSUB1 PCSUB1 8 1 H[1] 25.0mils 5 Thickness of dielectric layer #1 2 Er 10.0 -1 Dielectric constant 3 Cond 1.0E+306 -1 Conductor conductivity 4 Hu 100.0mils 5 Upper ground plane spacing 5 Hl 100.0mils 5 Lower ground plane spacing 6 T 1.0mils 5 Metal thickness 7 W 500.0mils 5 Distance between sidewalls 8 Sigma 0 -1 Dielectric conductivity END_ELEMENT PCSUB2 PCSUB2 9 1 H[1] 25.0mils 5 Thickness of dielectric layer #1 2 H[2] 25.0mils 5 Thickness of dielectric layer #2 3 Er 10.0 -1 Dielectric constant 4 Cond 1.0E+306 -1 Conductor conductivity 5 Hu 100.0mils 5 Upper ground plane spacing 6 Hl 100.0mils 5 Lower ground plane spacing 7 T 1.0mils 5 Metal thickness 8 W 500.0mils 5 Distance between sidewalls 9 Sigma 0 -1 Dielectric conductivity END_ELEMENT PCSUB3 PCSUB3 10 1 H[1] 25.0mils 5 Thickness of dielectric layer #1 2 H[2] 25.0mils 5 Thickness of dielectric layer #2 3 H[3] 25.0mils 5 Thickness of dielectric layer #3 4 Er 10.0 -1 Dielectric constant 5 Cond 1.0E+306 -1 Conductor conductivity 6 Hu 100.0mils 5 Upper ground plane spacing 7 Hl 100.0mils 5 Lower ground plane spacing 8 T 1.0mils 5 Metal thickness 9 W 500.0mils 5 Distance between sidewalls 10 Sigma 0 -1 Dielectric conductivity END_ELEMENT PCSUB4 PCSUB4 11 1 H[1] 25.0mils 5 Thickness of dielectric layer #1 2 H[2] 25.0mils 5 Thickness of dielectric layer #2 3 H[3] 25.0mils 5 Thickness of dielectric layer #3 4 H[4] 25.0mils 5 Thickness of dielectric layer #4 5 Er 10.0 -1 Dielectric constant 6 Cond 1.0E+306 -1 Conductor conductivity 7 Hu 100.0mils 5 Upper ground plane spacing 8 Hl 100.0mils 5 Lower ground plane spacing 9 T 1.0mils 5 Metal thickness 10 W 500.0mils 5 Distance between sidewalls 11 Sigma 0 -1 Dielectric conductivity END_ELEMENT PCSUB5 PCSUB5 12 1 H[1] 25.0mils 5 Thickness of dielectric layer #1 2 H[2] 25.0mils 5 Thickness of dielectric layer #2 3 H[3] 25.0mils 5 Thickness of dielectric layer #3 4 H[4] 25.0mils 5 Thickness of dielectric layer #4 5 H[5] 25.0mils 5 Thickness of dielectric layer #5 6 Er 10.0 -1 Dielectric constant 7 Cond 1.0E+306 -1 Conductor conductivity 8 Hu 100.0mils 5 Upper ground plane spacing 9 Hl 100.0mils 5 Lower ground plane spacing 10 T 1.0mils 5 Metal thickness 11 W 500.0mils 5 Distance between sidewalls 12 Sigma 0 -1 Dielectric conductivity END_ELEMENT PCSUB6 PCSUB6 13 1 H[1] 25.0mils 5 Thickness of dielectric layer #1 2 H[2] 25.0mils 5 Thickness of dielectric layer #2 3 H[3] 25.0mils 5 Thickness of dielectric layer #3 4 H[4] 25.0mils 5 Thickness of dielectric layer #4 5 H[5] 25.0mils 5 Thickness of dielectric layer #5 6 H[6] 25.0mils 5 Thickness of dielectric layer #6 7 Er 10.0 -1 Dielectric constant 8 Cond 1.0E+306 -1 Conductor conductivity 9 Hu 100.0mils 5 Upper ground plane spacing 10 Hl 100.0mils 5 Lower ground plane spacing 11 T 1.0mils 5 Metal thickness 12 W 500.0mils 5 Distance between sidewalls 13 Sigma 0 -1 Dielectric conductivity END_ELEMENT PCSUB7 PCSUB7 14 1 H[1] 25.0mils 5 Thickness of dielectric layer #1 2 H[2] 25.0mils 5 Thickness of dielectric layer #2 3 H[3] 25.0mils 5 Thickness of dielectric layer #3 4 H[4] 25.0mils 5 Thickness of dielectric layer #4 5 H[5] 25.0mils 5 Thickness of dielectric layer #5 6 H[6] 25.0mils 5 Thickness of dielectric layer #6 7 H[7] 25.0mils 5 Thickness of dielectric layer #7 8 Er 10.0 -1 Dielectric constant 9 Cond 1.0E+306 -1 Conductor conductivity 10 Hu 100.0mils 5 Upper ground plane spacing 11 Hl 100.0mils 5 Lower ground plane spacing 12 T 1.0mils 5 Metal thickness 13 W 500.0mils 5 Distance between sidewalls 14 Sigma 0 -1 Dielectric conductivity END_ELEMENT PCTAPER PCTAPER 6 1 Subst PCSub1 -1 Substrate instance name 2 W1 25.0mils 5 Conductor width at pin 1 3 W2 15.0mils 5 Conductor width at pin 2 4 L 100.0mils 5 Length of the line 5 CLayer 1 -1 Conductor layer number 6 Temp '' 12 Physical temperature END_ELEMENT PCTEE PCTEE 6 1 Subst PCSub1 -1 Substrate instance name 2 W1 10.0mils 5 Width at pin 1 3 W2 10.0mils 5 Width at pin 2 4 W3 10.0mils 5 Width at pin 3 5 CLayer 1 -1 Conductor layer number 6 Temp '' 12 Physical temperature END_ELEMENT PCTRACE PCTRACE 5 1 Subst PCSub1 -1 Substrate instance name 2 W 10.0mils 5 Width of the line 3 CLayer 1 -1 Conductor layer number 4 L 25.0mils 5 Length of the line 5 Temp '' 12 Physical temperature END_ELEMENT PI4DQPSK_ModTuned PI4DQPSK_ModTuned 4 1 Fnom 1GHz 0 Nominal Input Frequency 2 Rout 50ohm 1 Output Resistance 3 SymbolRate 24.3KHz 0 Output Symbol Rate (1/2 Input Bit Rate) 4 Delay 50nsec 6 Sampling Delay END_ELEMENT PIN PIN 6 1 Cj 0.1nF 4 Junction Capacitance 2 Rj 0.01ohm 1 Junction resistance 3 Rs 0.01ohm 1 Diode series resistance 4 Ls 1.0nH 3 Bond wire inductance 5 Cb 0.1nF 4 By-pass Capacitance 6 Cg 0.1nF 4 Capacitance of gap which diode is connected END_ELEMENT PIN2 PIN2 5 1 Cj 0.1nF 4 Junction Capacitance 2 Rj 0.01ohm 1 Junction resistance 3 Rs 0.01ohm 1 Diode series resistance 4 Ls 1.0nH 3 Diode series inductance 5 Cp 0.1nF 4 Package Capacitance END_ELEMENT PLC PLC 2 1 L 1.0nH 3 Inductance 2 C 1.0pF 4 Capacitance END_ELEMENT PLCQ PLCQ 9 1 L 120.0nH 3 Inductance 2 Ql 50.0 -1 Quality factor of L 3 Fl 100.0MHz 0 Frequency at which ql is given 4 ModL loss_freq -1 Loss Mode for inductor of ql 5 C 21.0pF 4 Capacitance 6 Qc 100.0 -1 Quality factor of C 7 Fc 100.0MHz 0 Frequency at which qc is given 8 ModC loss_freq -1 Loss Mode for capacitor of qc 9 Rdc 0.0ohm 1 Resistance for modes 2 and 3 END_ELEMENT PM_DemodTuned PM_DemodTuned 3 1 Sensitivity 10deg 7 Demodulation Sensitivity, in Degree/Volt 2 Fnom 1GHz 0 Nominal Input Frequency 3 Rout 50ohm 1 Output Resistance END_ELEMENT PM_ModTuned PM_ModTuned 3 1 Sensitivity 10deg 7 Modulation Sensitivity, Degree/Volt 2 Fnom 1GHz 0 Nominal Input Frequency 3 Rout 50ohm 1 Output Resistance END_ELEMENT PM_UnwrapDemodTuned PM_UnwrapDemodTuned 3 1 Sensitivity 10deg 7 Demodulation Sensitivity, in Degree/Volt 2 Fnom 1GHz 0 Nominal Input Frequency 3 MaxAngle 360deg 7 Unwrapped Phase Angle Range (+/- MaxAngle) END_ELEMENT PRC PRC 2 1 R 1.0Mohm 1 Parallel resistance 2 C 1.0pF 4 Capacitance END_ELEMENT PRL PRL 2 1 R 1.0Mohm 1 Parallel resistance 2 L 1.0nH 3 Inductance END_ELEMENT PRLC PRLC 3 1 R 1.0Mohm 1 Parallel resistance 2 L 1.0nH 3 Inductance 3 C 1.0pF 4 Capacitance END_ELEMENT P_1Tone P_1Tone 11 1 Num 1 -1 Port number 2 Z 50ohm 1 Source impedance, use 1+j*0 for complex 3 P (dbmtow(0)) 8 Power at center frequency, use polar() for phase 4 Freq 1GHz 0 Center frequency 5 P_USB '' 8 Power of upper sideband small signal tone, use polar() for phase 6 P_LSB '' 8 Power of lower sideband small-signal tone, use polar() for phase 7 Mod '' -1 Modulation function 8 Noise y_n1 -1 Enable/disable port thermal noise 9 Pac (dbmtow(0)) 8 AC power, use polar() for phase 10 FundIndex '' -1 Fundamental Frequency Index (Can Be Used Instead of Specifying Freq") 11 Vdc '' 9 Open circuit DC voltage END_ELEMENT P_AC P_AC 6 1 Num 1 -1 Port number 2 Z 50ohm 1 Reference impedance, use 1+j*0 for complex 3 Pac (dbmtow(0)) 8 AC power, use polar() for phase 4 Freq freq 0 Frequency 5 Noise y_n1 -1 Enable/disable port thermal noise 6 Vdc '' 9 Open circuit DC voltage END_ELEMENT P_SpectrumDataset P_SpectrumDataset 5 1 Num 1 -1 Port number 2 Z 50ohm 1 Source impedance, use 1+j*0 for complex 3 Freq 1GHz 0 Fundamental frequency 4 Dataset '' -1 Dataset name 5 Expression '' -1 Dataset variable or expression END_ELEMENT P_nHarm P_nHarm 8 1 Num 1 -1 Port number 2 Z 50ohm 1 Source impedance, use 1+j*0 for complex 3 Freq 1GHz 0 Fundamental frequency 4 P 0W 8 N-th harmonic power level (use Add for more harmonics), , use polar() for phase 5 Noise y_n1 -1 Enable/disable port thermal noise 6 Pac (dbmtow(0)) 8 AC power, use polar() for phase 7 FundIndex '' -1 Fundamental Frequency Index (Can Be Used Instead of Specifying Freq") 8 Vdc '' 9 Open circuit DC voltage END_ELEMENT P_nTone P_nTone 7 1 Num 1 -1 Port number 2 Z 50ohm 1 Source impedance, use 1+j*0 for complex 3 Freq 1GHz 0 N-th frequency tone (use Add for more tones) 4 P (dbmtow(0)) 8 Corresponding N-th tone power level, (use Add for more power levels), use polar() for phase 5 Noise y_n1 -1 Enable/disable port thermal noise 6 Pac (dbmtow(0)) 8 AC power, use polar() for phase 7 Vdc '' 9 Open circuit DC voltage END_ELEMENT Pad Pad 4 1 NetType Pi -1 Pi or Tee Network 2 Loss 0.dB 13 attenuation in dB 3 R1 50.ohm 1 reference resistance for port1 4 R2 50.ohm 1 reference resistance for port2 END_ELEMENT ParallelSerial ParallelSerial 5 1 OutputRate 50KHz 0 Serial Output Data Clock Rate 2 LSB_First y_n1 -1 Serial Data Is Output with Least Significant Bit First 3 Delay 0.0nsec 6 Initial Synchronization Delay 4 InputBits 4 -1 Number of Bits in Input Word 5 IntegerIn y_n1 -1 Yes if input data is scaled as integers instead of from -1 to 1 END_ELEMENT ParamSweep ParamSweep 17 1 UseSweepPlan '' -1 Flag to indicate use of SweepPlan 2 SweepPlan '' -1 SWEEP plan instance/path name to append to sweep 3 SweepVar '' -1 Name of variable or parameter to be swept 4 SimInstanceName list(,,,,,) -1 Analysis instance/path name to control (repeatable) 5 StatusLevel 2 -1 Degree of annotation 6 RestoreNomValues '' -1 Restores nominal values if controlling optimization 7 Start 1 -1 Start value 8 Stop 10 -1 Stop value 9 Step 1 -1 Step value 10 Center '' -1 Center value 11 Span '' -1 Span 12 Lin '' -1 Linear sweep 13 Dec '' -1 Number of points per decade 14 Log '' -1 Log sweep 15 Reverse '' -1 Reverse sweep 16 Pt '' 0 Frequency value if its not being swept 17 Sort 'LINEAR START STEP' -1 Single point END_ELEMENT Pfc Pfc 1 1 Function list(our_pfc=pfc(vout,0,I_Probe1.i,{1,0})) -1 pfc(positive_voltage,negative_voltage,current_probe,desired_harm_freq) END_ELEMENT PfcTran PfcTran 1 1 Function 'list(our_pfct=pfc_tran(vout, 0,I_Probe1.i,1GHz,1))' -1 pfc_tran(positive_voltage,negative_voltage,current_probe,fund_freq,num_of_harm) END_ELEMENT PhaseComp PhaseComp 1 1 Function list(our_pcomp=phase_comp(S21[::,0])) -1 phase_comp(complex_transmission_coeff) END_ELEMENT PhaseFreqDet PhaseFreqDet 2 1 Vhigh 5V 9 High-state Output Voltage 2 Vlow 0V 9 Low-state Output Voltage END_ELEMENT PhaseFreqDetTuned PhaseFreqDetTuned 4 1 Sensitivity 0.1 -1 Detector Sensitivity, (mA/degree) 2 MaxAngle 360deg 7 Maximum Unwrapped Phase Angle (+/- MaxAngle) 3 Vlimit 20V 9 Maximum Output Voltage Compliance (+/- Vlimit) 4 Fnom 100KHz 0 Nominal input frequency for VCO and REF inputs END_ELEMENT PhaseNoiseMod PhaseNoiseMod 5 1 Fnom 1GHz 0 Nominal Input Frequency 2 Rout 50ohm 1 Output Resistance) 3 Fcorner 1MHz 0 Corner Frequency for 1/f Noise Performance 4 NF 3dB 13 Broad Band Noise Figure 5 QL 500 -1 Loaded Q of Resonator END_ELEMENT PhaseShiftSML PhaseShiftSML 5 1 Phase 90.deg 7 phase shift 2 PhaseSlope 0. -1 per frequency octave 3 FreqStart '' 0 frequency where slope begins 4 RTConj y_n0 -1 reverse transmission conjugate, Yes to apply 5 ZRef 50.ohm 1 reference impedance for all ports END_ELEMENT PinDiode PinDiode 5 1 Model NLPINM1 -1 Model instance name 2 Area '' -1 Junction Area 3 Region '' -1 DC operating region, 0=off, 1=on 4 Temp '' 12 Device operating temperature 5 Mode simtype_nonlin -1 Simulation Mode for This Device END_ELEMENT PinDiodeModel PinDiodeModel 18 1 Is '' 10 Saturation Current, A 2 Vi '' 9 I-Region Forward Bias Voltage Drop, V 3 Un '' -1 Electron Mobility, cm^2/(V*s) 4 Wi '' -1 I-Region Width, m 5 Rr '' 1 I-Region Reverse Bias Resistance, Ohm 6 Cmin '' 4 P-I-N Punchthrough Capacitance, F 7 Tau '' 6 Ambipolar Lifetime within I-Region, s 8 Rs '' 1 Ohmic Resistance, Ohm 9 Cjo '' 4 Zero-Bias Junction Capacitance, F 10 Vj '' 9 Junction Potential, V 11 M '' -1 Grading coefficient 12 Fc '' -1 Forward-bias Depletion Cap. Coefficient 13 Imax '' -1 Explosion current, A/m^2 14 Kf '' -1 Flicker Noise Coefficient 15 Af '' -1 Flicker Noise Exponent 16 Ffe '' -1 Flicker noise frequency exponent 17 wBv '' 9 Diode Reverse Breakdown Voltage (warning), V 18 wPmax '' 8 Maximum Power Dissipation (warning), W END_ELEMENT Pspec Pspec 1 1 Function list(our_pspec=pspec(vout,0,I_Probe1.i)) -1 pspec(positive_voltage,negative_voltage,current_probe) END_ELEMENT PspecTran PspecTran 1 1 Function 'list(our_pspect=psepc_tran(vout, 0,I_Probe1.i,1GHz,8))' -1 pspec_tran(positive_voltage,negative_voltage,current_probe,fund_freq,num_of_harm) END_ELEMENT Pt Pt 1 1 Function list(our_pt=pt(vout,0,I_Probe1.i)) -1 pt(positive_voltage,negative_voltage,current_probe) END_ELEMENT PtRF_CDMA PtRF_CDMA 5 1 F0 894MHz 0 Carrier Frequency 2 Power (dbmtow(0)) 8 Output Power at RF Output 3 Z 50ohm 1 Output Impedance of RF Output, use 1+j*0 for complex 4 LinMod 1.0 -1 Additional Linear Modulation 5 Toffset 0sec 6 Time Offset into Data Array END_ELEMENT PtRF_GSM PtRF_GSM 5 1 F0 1GHz 0 Carrier Frequency 2 Power (dbmtow(0)) 8 Output Power at RF Output 3 Rout 50ohm 1 Output Resistance of RF Output 4 DataRate 270.833KHz 0 Digital Modulation Data Rate 5 InitBits 001101010010 -1 Initial State of PRBS Data Generator END_ELEMENT PtRF_NADC PtRF_NADC 5 1 F0 870.03MHz 0 Carrier Frequency 2 Power (dbmtow(0)) 8 RF Output Power 3 Z 50ohm 1 Output Impedance of RF Output, use 1+j*0 for complex 4 LinMod 1.0 -1 Additional Linear Modulation 5 Toffset 0sec 6 Time Offset into Data Array END_ELEMENT PtRF_PHS PtRF_PHS 5 1 F0 1895MHz 0 Carrier Frequency 2 Power (dbmtow(0)) 8 Output Power at RF Output 3 Z 50ohm 1 Output Impedance of RF Output, use 1+j*0 for complex 4 LinMod 1.0 -1 Additional Linear Modulation 5 Toffset 0sec 6 Time Offset into Data Array END_ELEMENT PtRF_Pulse PtRF_Pulse 15 1 Num 1 -1 Port number 2 Z 50ohm 1 Source impedance, use 1+j*0 for complex 3 P (dbmtow(0)) 8 Carrier power during pulse 4 Freq 1GHz 0 RF carrier frequency 5 OffRatio 0 -1 Linear amplitude ratio of OFF to ON portions of pulse 6 Delay 0nsec 6 Time delay before first pulse 7 Rise 1nsec 6 Rise time of pulse 8 Fall 1nsec 6 Fall time of pulse 9 Width 3nsec 6 Width of constant portion of pulse 10 Period 100nsec 6 Pulse repetition period 11 Chirp 0Hz 0 Linear frequency modulation during pulse 12 Phase0 0deg 7 Initial phase of pulse carrier 13 Noise y_n1 -1 Enable/disable port thermal noise 14 Pac (dbmtow(0)) 8 AC power, use 1+j*0 for complex 15 Vdc '' 9 Open circuit DC voltage END_ELEMENT PtRF_Step PtRF_Step 9 1 Num 1 -1 Port number 2 Z 50ohm 1 Source impedance, use 1+j*0 for complex 3 P (dbmtow(0)) 8 Steady state power 4 Freq 1GHz 0 RF Frequency 5 Delay 0nsec 6 Time delay before step 6 Rise 0nsec 6 Rise time of step 7 Noise y_n1 -1 Enable/disable port thermal noise 8 Pac (dbmtow(0)) 8 AC power, use polar() for phase 9 Vdc '' 9 Open circuit DC voltage END_ELEMENT PwrGain PwrGain 1 1 Function list(our_pgain=pwr_gain(S21)) -1 pwr_gain(complex_transmission_coeff) END_ELEMENT PwrSplit2 PwrSplit2 8 1 S21 1. -1 Transmission Coefficient, Port1 to Port2, Complex Number: 1+j*0, polar(), dbpolar() 2 S31 1. -1 Transmission Coefficient, Port1 to Port3, Complex Number: 1+j*0, polar(), dbpolar() 3 S11 0. -1 Port1 Reflection Coefficient, Complex Number: 1+j*0, polar(), dbpolar() 4 S22 0. -1 Port2 Reflection Coefficient, Complex Number: 1+j*0, polar(), dbpolar() 5 Isolation 100.dB 13 Isolation Between Port2 and Port3 in dB 6 ZRef 50.ohm 1 Reference Impedance for All Ports 7 Temp '' 12 Temperature in Degrees Celsius 8 Delay '' 6 Time Delay END_ELEMENT PwrSplit3 PwrSplit3 6 1 S21 1. -1 Transmission Coefficient, Port1 to Port2, Complex Number: 1+j*0, polar(), dbpolar() 2 S31 1. -1 Transmission Coefficient, Port1 to Port3, Complex Number: 1+j*0, polar(), dbpolar() 3 S41 1. -1 Transmission Coefficient, Port1 to Port4, Complex Number: 1+j*0, polar(), dbpolar() 4 ZRef 50.ohm 1 Reference Impedance for All Ports 5 Temp '' 12 Temperature in Degrees Celsius 6 Delay '' 6 Time Delay END_ELEMENT QPSK_ModTuned QPSK_ModTuned 6 1 Fnom 1GHz 0 Nominal Input Frequency 2 Rout 50ohm 1 Output Resistance 3 State1 exp(-j*3*pi/4) -2 Complex Modulation Coordinates of State 1 4 State2 exp(-j*5*pi/4) -2 Complex Modulation Coordinates of State 2 5 State3 exp(-j*pi) -2 Complex Modulation Coordinates of State 3 6 State4 exp(-j*7*pi/4) -2 Complex Modulation Coordinates of State 4 END_ELEMENT QuantizerSML QuantizerSML 4 1 Vmin -1.0V 9 Minimum Baseband Input Voltage 2 Vmax 1.0V 9 Maximum Baseband Input Voltage 3 N 32 -1 Number of Quantized Output Levels 4 OutState 1 -1 =1 for outputing integers representing quantization levels, =0 for outputing quantized input END_ELEMENT R R 8 1 R 50ohm 1 Resistance 2 Temp '' 12 Temperature 3 Tnom '' 12 Nominal temperature 4 TC1 '' 12 Temperature coefficient; per degree Celsius 5 TC2 '' 12 Temperature coefficient; per degree Celsius squared 6 Noise Yes -1 Resistor thermal noise option: YES=enable; NO=disable 7 wPmax '' 8 Maximum power dissipation (warning) 8 wImax '' 10 Maximum current (warning) END_ELEMENT RCLIN RCLIN 4 1 R 50.0ohm 1 Series Resistance per meter 2 C 0.01pF 4 Shunt Capacitance per meter 3 L 1000.0mils 5 Length 4 Temp '' 12 Physical temperature END_ELEMENT RIBBON RIBBON 9 1 W 25.0mils 5 Conductor width 2 L 100.0mils 5 Conductor length 3 Rho 1.0 -1 Metal resistivity (relative to gold) 4 Temp '' 12 Physical temperature 5 AF 0.5 -1 (for Layout option) Arc factor;ratio of distance between two pins to wire length 6 CO 5.0mils 5 (for Layout option) Conductor offset; distance from edge of conductor 7 A1 30.0deg 7 (for Layout option) Angle of departure from first pin 8 A2 30.0deg 7 (for Layout option) Angle between direction of first and second pins 9 BondLayer smt_bond -1 (for Layout option) Layer on which the ribbon is drawn END_ELEMENT RIND RIND 9 1 N 3.0 -1 Number of turns 2 L1 30.0mils 5 Length of Second Outermost Segment 3 L2 20.0mils 5 Length of Outermost Segment 4 W 1.0mils 5 Conductor Width 5 S 1.0mils 5 Conductor Spacing 6 T 0.2mils 5 Conductor Thickness 7 Rho 1.0 -1 Conductor Resistivity (Relative to copper) 8 FR 10.0MHz 0 Resonant frequency 9 Temp '' 12 Physical temperature END_ELEMENT RWG RWG 10 1 A 900.0mils 5 Inside Width of Enclosure 2 B 400.0mils 5 Inside Height of Enclosure 3 L 10000.0mils 5 Waveguide Length 4 Er 1.0 -1 Relative dielectric constant 5 Rho 1.0 -1 Metal Resistivity (Relative to Copper) 6 TanD 0 -1 Dielectric loss tangent 7 Mur 1 -1 Relative permeability 8 TanM 0 -1 Permeability 9 Sigma 0 -1 Dielectric conductivity 10 Temp '' 12 Physical temperature END_ELEMENT RWGINDF RWGINDF 10 1 A 900.0mils 5 Inside Width of Enclosure 2 B 400.0mils 5 Inside Height of Enclosure 3 L 10000.0mils 5 Length of the Fin 4 Er 1.0 -1 Relative dielectric constant 5 Rho 1.0 -1 Metal Resistivity (Relative to Copper) 6 TanD 0 -1 Dielectric loss tangent 7 Mur 1 -1 Relative permeability 8 TanM 0 -1 Permeability 9 Sigma 0 -1 Dielectric conductivity 10 Temp '' 12 Physical temperature END_ELEMENT RWGT RWGT 9 1 A 900.0mils 5 Inside Width of Enclosure 2 B 400.0mils 5 Inside Height of Enclosure 3 Er 1.0 -1 Relative dielectric constant 4 Rho 1.0 -1 Metal Resistivity (Relative to Copper) 5 TanD 0 -1 Dielectric loss tangent 6 Mur 1 -1 Relative permeability 7 TanM 0 -1 Permeability 8 Sigma 0 -1 Dielectric conductivity 9 Temp '' 12 Physical temperature END_ELEMENT R_Conn R_Conn 1 1 R 50ohm 1 Resistance END_ELEMENT R_Model R_Model 11 1 R 50ohm 1 Resistance 2 Rsh '' 1 Sheet Resistance 3 Length '' 5 Length 4 Width '' 5 Width 5 Narrow '' 5 Length and width narrowing due to etching 6 Tnom '' 12 Nominal temperature 7 TC1 '' 12 Temperature coefficient; per degree Celsius 8 TC2 '' 12 Temperature coefficient; per degree Celsius squared 9 wPmax '' 8 Maximum power dissipation (warning) 10 wImax '' 10 Maximum current (warning) 11 AllParams '' -1 Data Access Component (DAC) Based Parameters END_ELEMENT R_Pad1 R_Pad1 4 1 R 50ohm 1 Resistance 2 W 25.0mils 5 W 3 S 10.0mils 5 S 4 L1 50.0mils 5 L END_ELEMENT R_Space R_Space 2 1 R 50ohm 1 Resistance 2 L1 50.0mils 5 L END_ELEMENT ResetSwitch ResetSwitch 0 END_ELEMENT S1P S1P 5 1 File '' -1 File Name 2 Type Type1 -1 File Type 3 InterpMode Mode0 -1 Interpolation Mode 4 InterpDom ID0 -1 Interpolation Domain 5 Temp '' 12 Temperature END_ELEMENT S1P_Eqn S1P_Eqn 14 1 S[1,1] '' -1 S-parameter 2 Z[1] '' 1 Port 1 impedance 3 NFmin '' 13 Minimum noise figure in dB 4 Rn '' 1 Noise resistance 5 Sopt '' -1 Optimum noise match S-Parameter 6 Temp '' 12 Device noise temperature 7 ImpNoncausalLength '' -1 Non-causal function impulse response order 8 ImpMode '' -1 Convolution mode 9 ImpMaxFreq '' 0 Maximum Frequency to which device is evaluated 10 ImpDeltaFreq '' 0 Sample spacing in frequency 11 ImpMaxOrder '' -1 Maximum allowed impulse response order 12 ImpWindow '' -1 Smoothing window 13 ImpRelTol '' -1 Relative impulse response truncation factor 14 ImpAbsTol '' -1 Absolute impulse response truncation factor END_ELEMENT S2P S2P 5 1 File '' -1 File Name 2 Type Type1 -1 File Type 3 InterpMode Mode0 -1 Interpolation Mode 4 InterpDom ID0 -1 Interpolation Domain 5 Temp '' 12 Temperature END_ELEMENT S2P_Eqn S2P_Eqn 19 1 S[1,1] '' -1 S-parameter 2 S[1,2] '' -1 S-parameter 3 S[2,1] '' -1 S-parameter 4 S[2,2] '' -1 S-parameter 5 Z[1] '' 1 Port 1 impedance 6 Z[2] '' 1 Port 2 impedance 7 Recip No -1 Port is reciprocal 8 NFmin '' 13 Minimum noise figure in dB 9 Rn '' 1 Noise resistance 10 Sopt '' -1 Optimum noise match S-Parameter 11 Temp '' 12 Device noise temperature 12 ImpNoncausalLength '' -1 Non-causal function impulse response order 13 ImpMode '' -1 Convolution mode 14 ImpMaxFreq '' 0 Maximum Frequency to which device is evaluated 15 ImpDeltaFreq '' 0 Sample spacing in frequency 16 ImpMaxOrder '' -1 Maximum allowed impulse response order 17 ImpWindow '' -1 Smoothing window 18 ImpRelTol '' -1 Relative impulse response truncation factor 19 ImpAbsTol '' -1 Absolute impulse response truncation factor END_ELEMENT S3P S3P 5 1 File '' -1 File Name 2 Type Type1 -1 File Type 3 InterpMode Mode0 -1 Interpolation Mode 4 InterpDom ID0 -1 Interpolation Domain 5 Temp '' 12 Temperature END_ELEMENT S3P_Eqn S3P_Eqn 25 1 S[1,1] '' -1 S-parameter 2 S[1,2] '' -1 S-parameter 3 S[1,3] '' -1 S-parameter 4 S[2,1] '' -1 S-parameter 5 S[2,2] '' -1 S-parameter 6 S[2,3] '' -1 S-parameter 7 S[3,1] '' -1 S-parameter 8 S[3,2] '' -1 S-parameter 9 S[3,3] '' -1 S-parameter 10 Z[1] '' 1 Port 1 impedance 11 Z[2] '' 1 Port 2 impedance 12 Z[3] '' 1 Port 3 impedance 13 Recip No -1 Port is reciprocal 14 NFmin '' 13 Minimum noise figure in dB 15 Rn '' 1 Noise resistance 16 Sopt '' -1 Optimum noise match S-Parameter 17 Temp '' 12 Device noise temperature 18 ImpNoncausalLength '' -1 Non-causal function impulse response order 19 ImpMode '' -1 Convolution mode 20 ImpMaxFreq '' 0 Maximum Frequency to which device is evaluated 21 ImpDeltaFreq '' 0 Sample spacing in frequency 22 ImpMaxOrder '' -1 Maximum allowed impulse response order 23 ImpWindow '' -1 Smoothing window 24 ImpRelTol '' -1 Relative impulse response truncation factor 25 ImpAbsTol '' -1 Absolute impulse response truncation factor END_ELEMENT S4P S4P 5 1 File '' -1 File Name 2 Type Type1 -1 File Type 3 InterpMode Mode0 -1 Interpolation Mode 4 InterpDom ID0 -1 Interpolation Domain 5 Temp '' 12 Temperature END_ELEMENT S4P_Eqn S4P_Eqn 33 1 S[1,1] '' -1 S-parameter 2 S[1,2] '' -1 S-parameter 3 S[1,3] '' -1 S-parameter 4 S[1,4] '' -1 S-parameter 5 S[2,1] '' -1 S-parameter 6 S[2,2] '' -1 S-parameter 7 S[2,3] '' -1 S-parameter 8 S[2,4] '' -1 S-parameter 9 S[3,1] '' -1 S-parameter 10 S[3,2] '' -1 S-parameter 11 S[3,3] '' -1 S-parameter 12 S[3,4] '' -1 S-parameter 13 S[4,1] '' -1 S-parameter 14 S[4,2] '' -1 S-parameter 15 S[4,3] '' -1 S-parameter 16 S[4,4] '' -1 S-parameter 17 Z[1] '' 1 Port 1 impedance 18 Z[2] '' 1 Port 2 impedance 19 Z[3] '' 1 Port 3 impedance 20 Z[4] '' 1 Port 4 impedance 21 Recip No -1 Port is reciprocal 22 NFmin '' 13 Minimum noise figure in dB 23 Rn '' 1 Noise resistance 24 Sopt '' -1 Optimum noise match S-Parameter 25 Temp '' 12 Device noise temperature 26 ImpNoncausalLength '' -1 Non-causal function impulse response order 27 ImpMode '' -1 Convolution mode 28 ImpMaxFreq '' 0 Maximum Frequency to which device is evaluated 29 ImpDeltaFreq '' 0 Sample spacing in frequency 30 ImpMaxOrder '' -1 Maximum allowed impulse response order 31 ImpWindow '' -1 Smoothing window 32 ImpRelTol '' -1 Relative impulse response truncation factor 33 ImpAbsTol '' -1 Absolute impulse response truncation factor END_ELEMENT S5P S5P 5 1 File '' -1 File Name 2 Type Type1 -1 File Type 3 InterpMode Mode0 -1 Interpolation Mode 4 InterpDom ID0 -1 Interpolation Domain 5 Temp '' 12 Temperature END_ELEMENT S5P_Eqn S5P_Eqn 43 1 S[1,1] '' -1 S-parameter 2 S[1,2] '' -1 S-parameter 3 S[1,3] '' -1 S-parameter 4 S[1,4] '' -1 S-parameter 5 S[1,5] '' -1 S-parameter 6 S[2,1] '' -1 S-parameter 7 S[2,2] '' -1 S-parameter 8 S[2,3] '' -1 S-parameter 9 S[2,4] '' -1 S-parameter 10 S[2,5] '' -1 S-parameter 11 S[3,1] '' -1 S-parameter 12 S[3,2] '' -1 S-parameter 13 S[3,3] '' -1 S-parameter 14 S[3,4] '' -1 S-parameter 15 S[3,5] '' -1 S-parameter 16 S[4,1] '' -1 S-parameter 17 S[4,2] '' -1 S-parameter 18 S[4,3] '' -1 S-parameter 19 S[4,4] '' -1 S-parameter 20 S[4,5] '' -1 S-parameter 21 S[5,1] '' -1 S-parameter 22 S[5,2] '' -1 S-parameter 23 S[5,3] '' -1 S-parameter 24 S[5,4] '' -1 S-parameter 25 S[5,5] '' -1 S-parameter 26 Z[1] '' 1 Port 1 impedance 27 Z[2] '' 1 Port 2 impedance 28 Z[3] '' 1 Port 3 impedance 29 Z[4] '' 1 Port 4 impedance 30 Z[5] '' 1 Port 5 impedance 31 Recip No -1 Port is reciprocal 32 NFmin '' 13 Minimum noise figure in dB 33 Rn '' 1 Noise resistance 34 Sopt '' -1 Optimum noise match S-Parameter 35 Temp '' 12 Device noise temperature 36 ImpNoncausalLength '' -1 Non-causal function impulse response order 37 ImpMode '' -1 Convolution mode 38 ImpMaxFreq '' 0 Maximum Frequency to which device is evaluated 39 ImpDeltaFreq '' 0 Sample spacing in frequency 40 ImpMaxOrder '' -1 Maximum allowed impulse response order 41 ImpWindow '' -1 Smoothing window 42 ImpRelTol '' -1 Relative impulse response truncation factor 43 ImpAbsTol '' -1 Absolute impulse response truncation factor END_ELEMENT S6P S6P 5 1 File '' -1 File Name 2 Type Type1 -1 File Type 3 InterpMode Mode0 -1 Interpolation Mode 4 InterpDom ID0 -1 Interpolation Domain 5 Temp '' 12 Temperature END_ELEMENT S6P_Eqn S6P_Eqn 55 1 S[1,1] '' -1 S-parameter 2 S[1,2] '' -1 S-parameter 3 S[1,3] '' -1 S-parameter 4 S[1,4] '' -1 S-parameter 5 S[1,5] '' -1 S-parameter 6 S[1,6] '' -1 S-parameter 7 S[2,1] '' -1 S-parameter 8 S[2,2] '' -1 S-parameter 9 S[2,3] '' -1 S-parameter 10 S[2,4] '' -1 S-parameter 11 S[2,5] '' -1 S-parameter 12 S[2,6] '' -1 S-parameter 13 S[3,1] '' -1 S-parameter 14 S[3,2] '' -1 S-parameter 15 S[3,3] '' -1 S-parameter 16 S[3,4] '' -1 S-parameter 17 S[3,5] '' -1 S-parameter 18 S[3,6] '' -1 S-parameter 19 S[4,1] '' -1 S-parameter 20 S[4,2] '' -1 S-parameter 21 S[4,3] '' -1 S-parameter 22 S[4,4] '' -1 S-parameter 23 S[4,5] '' -1 S-parameter 24 S[4,6] '' -1 S-parameter 25 S[5,1] '' -1 S-parameter 26 S[5,2] '' -1 S-parameter 27 S[5,3] '' -1 S-parameter 28 S[5,4] '' -1 S-parameter 29 S[5,5] '' -1 S-parameter 30 S[5,6] '' -1 S-parameter 31 S[6,1] '' -1 S-parameter 32 S[6,2] '' -1 S-parameter 33 S[6,3] '' -1 S-parameter 34 S[6,4] '' -1 S-parameter 35 S[6,5] '' -1 S-parameter 36 S[6,6] '' -1 S-parameter 37 Z[1] '' 1 Port 1 impedance 38 Z[2] '' 1 Port 2 impedance 39 Z[3] '' 1 Port 3 impedance 40 Z[4] '' 1 Port 4 impedance 41 Z[5] '' 1 Port 5 impedance 42 Z[6] '' 1 Port 6 impedance 43 Recip No -1 Port is reciprocal 44 NFmin '' 13 Minimum noise figure in dB 45 Rn '' 1 Noise resistance 46 Sopt '' -1 Optimum noise match S-Parameter 47 Temp '' 12 Device noise temperature 48 ImpNoncausalLength '' -1 Non-causal function impulse response order 49 ImpMode '' -1 Convolution mode 50 ImpMaxFreq '' 0 Maximum Frequency to which device is evaluated 51 ImpDeltaFreq '' 0 Sample spacing in frequency 52 ImpMaxOrder '' -1 Maximum allowed impulse response order 53 ImpWindow '' -1 Smoothing window 54 ImpRelTol '' -1 Relative impulse response truncation factor 55 ImpAbsTol '' -1 Absolute impulse response truncation factor END_ELEMENT S7P S7P 5 1 File '' -1 File Name 2 Type Type1 -1 File Type 3 InterpMode Mode0 -1 Interpolation Mode 4 InterpDom ID0 -1 Interpolation Domain 5 Temp '' 12 Temperature END_ELEMENT S8P S8P 5 1 File '' -1 File Name 2 Type Type1 -1 File Type 3 InterpMode Mode0 -1 Interpolation Mode 4 InterpDom ID0 -1 Interpolation Domain 5 Temp '' 12 Temperature END_ELEMENT S9P S9P 5 1 File '' -1 File Name 2 Type Type1 -1 File Type 3 InterpMode Mode0 -1 Interpolation Mode 4 InterpDom ID0 -1 Interpolation Domain 5 Temp '' 12 Temperature END_ELEMENT SAGELIN SAGELIN 2 1 L 18.5mils 5 Physical length of transmission line 2 BW_Code bwcode0 -1 Code for bandwidth selection END_ELEMENT SAGEPAC SAGEPAC 2 1 L 18.5mils 5 Physical length of transmission line 2 BW_Code bwcode0 -1 Code for bandwidth selection END_ELEMENT SBCLIN SBCLIN 10 1 Subst SSub1 -1 Substrate instance name 2 W 25.0mils 5 Line Width 3 S 10.0mils 5 Spacing Between Lines 4 L 100.0mils 5 Line Length 5 Temp '' 12 Physical temperature 6 W1 5.0mils 5 (for Layout option) Width of line that connects to pin 1 7 W2 5.0mils 5 (for Layout option) Width of line that connects to pin 2 8 W3 5.0mils 5 (for Layout option) Width of line that connects to pin 3 9 W4 5.0mils 5 (for Layout option) Width of line that connects to pin 4 10 P1Layer smt_cond1 -1 (for Layout option ) layer associated with pin 1 conductor END_ELEMENT SBEND SBEND 5 1 Subst SSub1 -1 Substrate instance name 2 W 25.0mils 5 Conductor Width 3 Angle 90deg 7 Angle of Bend 4 Temp '' 12 Physical temperature 5 Layer smt_cond1 -1 (for Layout option ) conductor layer number 6 AutomaticWidth 'Disabled' -1 END_ELEMENT SBEND2 SBEND2 6 1 Subst SSub1 -1 Substrate instance name 2 W 25.0mils 5 Conductor Width 3 Angle 90deg 7 Angle of Bend 4 M 0.6 15 Miter Fraction 5 Temp '' 12 Physical temperature 6 Layer smt_cond1 -1 (for Layout option ) conductor layer number 6 AutomaticWidth 'Disabled' -1 END_ELEMENT SCLIN SCLIN 10 1 Subst SSub1 -1 Substrate instance name 2 W 25.0mils 5 Line Width 3 S 10.0mils 5 Spacing Between Lines 4 L 100.0mils 5 Line Length 5 Temp '' 12 Physical temperature 6 W1 5.0mils 5 (for Layout option) Width of line that connects to pin 1 7 W2 5.0mils 5 (for Layout option) Width of line that connects to pin 2 8 W3 5.0mils 5 (for Layout option) Width of line that connects to pin 3 9 W4 5.0mils 5 (for Layout option) Width of line that connects to pin 4 10 Layer smt_cond1 -1 (for Layout option ) conductor layer number END_ELEMENT SCROS SCROS 7 1 Subst SSub1 -1 Substrate instance name 2 W1 25.0mils 5 Conductor Width at Pin 1 3 W2 50.0mils 5 Conductor Width at Pin 2 4 W3 25.0mils 5 Conductor Width at Pin 3 5 W4 50.0mils 5 Conductor Width at Pin 4 6 Temp '' 12 Physical temperature 7 Layer smt_cond1 -1 (for Layout option ) conductor layer number 8 AutomaticWidth 'Disabled' -1 END_ELEMENT SCURVE SCURVE 6 1 Subst SSub1 -1 Substrate instance name 2 W 25.0mils 5 Conductor Width 3 Angle -90deg 7 Angle Subtended by the Bend 4 Radius 100.0mils 5 Radius (Measured to Strip Centerline) 5 Temp '' 12 Physical temperature 6 Layer smt_cond1 -1 (for Layout option ) conductor layer number 7 AutomaticWidth 'Disabled' -1 END_ELEMENT SDD10P SDD10P 2 1 SDD list(prm("SddExplicit",1,0,(_v1)/50.0),prm("SddExplicit",2,0,(_v2)/50.0),prm("SddExplicit",3,0,(_v3)/50.0),prm("SddExplicit",4,0,(_v4)/50.0),prm("SddExplicit",5,0,(_v5)/50.0),prm("SddExplicit",6,0,(_v6)/50.0),prm("SddExplicit",7,0,(_v7)/50.0),prm("SddExplicit",8,0,(_v8)/50.0),prm("SddExplicit",9,0,(_v9)/50.0),prm("SddExplicit",10,0,(_v10)/50.0)) -2 SDD parameters 2 C '' -2 Controlling current name (repeatable) END_ELEMENT SDD1P SDD1P 2 1 SDD list(prm("SddExplicit",1,0,(_v1)/50.0)) -2 SDD parameters 2 C '' -2 Controlling current name (repeatable) END_ELEMENT SDD2P SDD2P 2 1 SDD list(prm("SddExplicit",1,0,(_v1)/50.0),prm("SddExplicit",2,0,(_v2)/50.0)) -2 SDD parameters 2 C '' -2 Controlling current name (repeatable) END_ELEMENT SDD3P SDD3P 2 1 SDD list(prm("SddExplicit",1,0,(_v1)/50.0),prm("SddExplicit",2,0,(_v2)/50.0),prm("SddExplicit",3,0,(_v3)/50.0)) -2 SDD parameters 2 C '' -2 Controlling current name (repeatable) END_ELEMENT SDD4P SDD4P 2 1 SDD list(prm("SddExplicit",1,0,(_v1)/50.0),prm("SddExplicit",2,0,(_v2)/50.0),prm("SddExplicit",3,0,(_v3)/50.0),prm("SddExplicit",4,0,(_v4)/50.0)) -2 SDD parameters 2 C '' -2 Controlling current name (repeatable) END_ELEMENT SDD5P SDD5P 2 1 SDD list(prm("SddExplicit",1,0,(_v1)/50.0),prm("SddExplicit",2,0,(_v2)/50.0),prm("SddExplicit",3,0,(_v3)/50.0),prm("SddExplicit",4,0,(_v4)/50.0),prm("SddExplicit",5,0,(_v5)/50.0)) -2 SDD parameters 2 C '' -2 Controlling current name (repeatable) END_ELEMENT SDD6P SDD6P 2 1 SDD list(prm("SddExplicit",1,0,(_v1)/50.0),prm("SddExplicit",2,0,(_v2)/50.0),prm("SddExplicit",3,0,(_v3)/50.0),prm("SddExplicit",4,0,(_v4)/50.0),prm("SddExplicit",5,0,(_v5)/50.0),prm("SddExplicit",6,0,(_v6)/50.0)) -2 SDD parameters 2 C '' -2 Controlling current name (repeatable) END_ELEMENT SDD7P SDD7P 2 1 SDD list(prm("SddExplicit",1,0,(_v1)/50.0),prm("SddExplicit",2,0,(_v2)/50.0),prm("SddExplicit",3,0,(_v3)/50.0),prm("SddExplicit",4,0,(_v4)/50.0),prm("SddExplicit",5,0,(_v5)/50.0),prm("SddExplicit",6,0,(_v6)/50.0),prm("SddExplicit",7,0,(_v7)/50.0)) -2 SDD parameters 2 C '' -2 Controlling current name (repeatable) END_ELEMENT SDD8P SDD8P 2 1 SDD list(prm("SddExplicit",1,0,(_v1)/50.0),prm("SddExplicit",2,0,(_v2)/50.0),prm("SddExplicit",3,0,(_v3)/50.0),prm("SddExplicit",4,0,(_v4)/50.0),prm("SddExplicit",5,0,(_v5)/50.0),prm("SddExplicit",6,0,(_v6)/50.0),prm("SddExplicit",7,0,(_v7)/50.0),prm("SddExplicit",8,0,(_v8)/50.0)) -2 SDD parameters 2 C '' -2 Controlling current name (repeatable) END_ELEMENT SDD9P SDD9P 2 1 SDD list(prm("SddExplicit",1,0,(_v1)/50.0),prm("SddExplicit",2,0,(_v2)/50.0),prm("SddExplicit",3,0,(_v3)/50.0),prm("SddExplicit",4,0,(_v4)/50.0),prm("SddExplicit",5,0,(_v5)/50.0),prm("SddExplicit",6,0,(_v6)/50.0),prm("SddExplicit",7,0,(_v7)/50.0),prm("SddExplicit",8,0,(_v8)/50.0),prm("SddExplicit",9,0,(_v9)/50.0)) -2 SDD parameters 2 C '' -2 Controlling current name (repeatable) END_ELEMENT SFDR SFDR 1 1 Function list(our_sfdr=sfdr(vout,3,nf2,1GHz,{1,0},{2,-1},50)) -1 sfdr(vout,ss_gain,noise_fig,noise_BW,fund_freq,IM_freq,ref_imped) END_ELEMENT SLC SLC 2 1 L 1.0nH 3 Inductance 2 C 1.0pF 4 Capacitance END_ELEMENT SLCQ SLCQ 9 1 L 120.0nH 3 Inductance 2 Ql 50.0 -1 Quality factor of L 3 Fl 100.0MHz 0 Frequency at which ql is given 4 ModL loss_freq -1 Loss Mode for inductor ql 5 C 21.0pF 4 Capacitance 6 Qc 100.0 -1 Quality factor of C 7 Fc 100.0MHz 0 Frequency at which qc is given 8 ModC loss_freq -1 Loss Mode for capacitor of qc 9 Rdc 0.0ohm 1 Resistance for modes 2 and 3 END_ELEMENT SLEF SLEF 5 1 Subst SSub1 -1 Substrate instance name 2 W 25.0mils 5 Line Width 3 L 100.0mils 5 Line Length 4 Temp '' 12 Physical temperature 5 Layer smt_cond1 -1 (for Layout option ) conductor layer number END_ELEMENT SLIN SLIN 5 1 Subst SSub1 -1 Substrate instance name 2 W 25.0mils 5 Line Width 3 L 100.0mils 5 Line Length 4 Temp '' 12 Physical temperature 5 Layer smt_cond1 -1 (for Layout option ) conductor layer number END_ELEMENT SLINO SLINO 6 1 Subst SSub1 -1 Substrate instance name 2 W 25.0mils 5 Line Width 3 S 31.25mils 5 Middle Dielectric Layer Thickness 4 L 100.0mils 5 Line Length 5 Temp '' 12 Physical temperature 6 Layer smt_cond1 -1 (for Layout option ) conductor layer number END_ELEMENT SLOC SLOC 5 1 Subst SSub1 -1 Substrate instance name 2 W 25.0mils 5 Line Width 3 L 100.0mils 5 Line Length 4 Temp '' 12 Physical temperature 5 Layer smt_cond1 -1 (for Layout option ) conductor layer number END_ELEMENT SLSC SLSC 5 1 Subst SSub1 -1 Substrate instance name 2 W 25.0mils 5 Line Width 3 L 100.0mils 5 Line Length 4 Temp '' 12 Physical temperature 5 Layer smt_cond1 -1 (for Layout option ) conductor layer number END_ELEMENT SMITER SMITER 4 1 Subst SSub1 -1 Substrate instance name 2 W 25.0mils 5 Conductor Width 3 Temp '' 12 Physical temperature 4 Layer smt_cond1 -1 (for Layout option ) conductor layer number END_ELEMENT SMT_Pad SMT_Pad 6 1 W 10.0mils 5 Width of the pad 2 L 25.0mils 5 Length of the pad 3 PadLayer smt_bond -1 Layer of the pad 4 SMO 5.0mils 5 Solder mask overlap 5 SM_Layer smt_solder_mask -1 Solder mask layer 6 PO 0m 5 Pad offset from connection pin END_ELEMENT SNR SNR 1 1 Function list(our_snr=snr(vout,vout.noise,1GHz,{1,0})) -1 snr(vout,noise_out,noise_BW,fund_freq) END_ELEMENT SOCLIN SOCLIN 11 1 Subst SSub1 -1 Substrate instance name 2 W 25.0mils 5 Conductor Width 3 WO 15.0mils 5 Conductor Offset 4 S 31.25mils 5 Conductor Spacing 5 L 100.0mils 5 Conductor Length 6 Temp '' 12 Physical temperature 7 W1 5.0mils 5 (for Layout option) Offset from pin 1 to conductor centerline 8 W2 5.0mils 5 (for Layout option) Offset from pin 2 to conductor centerline 9 W3 5.0mils 5 (for Layout option) Offset from pin 3 to conductor centerline 10 W4 5.0mils 5 (for Layout option) Offset from pin 4 to conductor centerline 11 P1Layer smt_cond1 -1 (for Layout option ) layer associated with pin 1 conductor END_ELEMENT SPDT_Dynamic SPDT_Dynamic 2 1 Ron 0ohm 1 On-State Resistance of Switch 2 Roff 1Gohm 1 Off-State Resistance of Switch END_ELEMENT SPDT_Static SPDT_Static 12 1 State 1 -1 state of switch, 0(off), 1(on) 2 F1 '' 0 first frequency break point 3 F2 '' 0 second frequency break point 4 F3 '' 0 third frequency break point 5 Loss1 0.dB 13 attenuation in dB for frequencies <=F1 6 Loss2 0.dB 13 attenuation in dB for F1frequency<=F3 8 VSWR1 1. -1 VSWR at both ports for frequencies <=F1 9 VSWR2 1. -1 VSWR at both ports for F1frequency<=F3 11 Isolat 100dB 13 isolation in dB 12 ZRef 50ohm 1 reference impedance for all ports END_ELEMENT SRC SRC 2 1 R 1.0Mohm 1 Series resistance 2 C 1.0pF 4 Capacitance END_ELEMENT SRL SRL 2 1 R 1.0mohm 1 Series resistance 2 L 1.0nH 3 Inductance END_ELEMENT SRLC SRLC 3 1 R 1.0mohm 1 Series resistance 2 L 1.0nH 3 Inductance 3 C 1.0pF 4 Capacitance END_ELEMENT SSCLIN SSCLIN 9 1 Subst SSSub1 -1 Substrate instance name 2 W 25.0mils 5 Line Width 3 S 10.0mils 5 Spacing Between Lines 4 L 100.0mils 5 Line Length 5 Temp '' 12 Physical temperature 6 W1 5.0mils 5 (for Layout option) Width of line that connects to pin 1 7 W2 5.0mils 5 (for Layout option) Width of line that connects to pin 2 8 W3 5.0mils 5 (for Layout option) Width of line that connects to pin 3 9 W4 5.0mils 5 (for Layout option) Width of line that connects to pin 4 END_ELEMENT SSLIN SSLIN 4 1 Subst SSSub1 -1 Substrate instance name 2 W 25.0mils 5 Line Width 3 L 100.0mils 5 Line Length 4 Temp '' 12 Physical temperature END_ELEMENT SSSUB SSSUB 10 1 H 25.0mils 5 Substrate thickness 2 Er 10.0 -1 Relative dielectric constant 3 Mur 1 -1 Relative permeability 4 Cond 1.0E+306 -1 Conductor conductivity 5 Hu 100.0mils 5 Cover height 6 Hl 100.0mils 5 Lower Ground Plane Spacing 7 T 0m 5 Conductor thickness 8 TanD 0 -1 Dielectric loss tangent 9 Rough 0m 5 Conductor surface roughness 10 Cond1 cond -1 (for Layout option) Layer to which cond is mapped END_ELEMENT SSTEP SSTEP 5 1 Subst SSub1 -1 Substrate instance name 2 W1 25.0mils 5 Conductor Width at Pin 1 3 W2 50.0mils 5 Conductor Width at Pin 2 4 Temp '' 12 Physical temperature 5 Layer smt_cond1 -1 (for Layout option ) conductor layer number 6 AutomaticWidth 'Disabled' -1 END_ELEMENT SSUB SSUB 8 1 Er 2.5 -1 Relative dielectric constant 2 Mur 1 -1 Relative permeability 3 B 62.5mils 5 Ground Plane Spacing 4 T 0m 5 Conductor thickness 5 Cond 1.0E+306 -1 Conductor conductivity 6 TanD 0 -1 Dielectric loss tangent 7 Cond1 cond -1 (for Layout option) Layer to which cond is mapped 8 Cond2 cond2 -1 (for Layout option) Layer to which cond2 is mapped END_ELEMENT SSUBO SSUBO 9 1 Er 2.5 -1 Relative dielectric constant 2 Mur 1 -1 Relative permeability 3 S 31.25mils 5 Inter-layer spacing 4 B 62.5mils 5 Ground Plane Spacing 5 T 0m 5 Conductor thickness 6 Cond 1.0E+306 -1 Conductor conductivity 7 TanD 0 -1 Dielectric loss tangent 8 Cond1 cond -1 (for Layout option) Layer to which cond is mapped 9 Cond2 cond2 -1 (for Layout option) Layer to which cond2 is mapped END_ELEMENT STEE STEE 6 1 Subst SSub1 -1 Substrate instance name 2 W1 25.0mils 5 Conductor Width at Pin 1 3 W2 50.0mils 5 Conductor Width at Pin 2 4 W3 25.0mils 5 Conductor Width at Pin 3 5 Temp '' 12 Physical temperature 6 Layer smt_cond1 -1 (for Layout option ) conductor layer number END_ELEMENT S_Param S_Param 30 1 SweepVar freq -1 Name of variable or parameter to be swept 2 UseSweepPlan '' -1 Flag to indicate use of SweepPlan 3 SweepPlan '' -1 SweepPlan instance path name for sweep values 4 Start 1.0GHz 0 Start frequency 5 Stop 10.0GHz 0 Stop frequency 6 Step 1.0GHz 0 Step frequency 7 Center '' 0 Center frequency 8 Span '' 0 Span 9 Lin '' -1 Linear sweep 10 Dec '' -1 Number of points per decade 11 Log '' -1 Log sweep 12 Reverse '' -1 Reverse sweep 13 Pt '' 0 Frequency value if its not being swept 14 Sort 'LINEAR START STEP' -1 Sort frequencies 15 CalcS yes -1 Calculate S-parameters 16 CalcY no -1 Calculate Y- parameters 17 CalcZ no -1 Calculate Z-parameters 18 CalcGroupDelay '' -1 Calculate group delays 19 GroupDelayAperture 1e-4 -1 Frequency aperture used to calculate group delay 20 FreqConversion No -1 Enable AC frequency conversion 21 FreqConversionPort 1 -1 S-parameter frequency conversion input port 22 UseFiniteDiff '' -1 Use finite differences for sensitivities 23 NestLevel 2 -1 Levels of subcircuits to output 24 StatusLevel 2 -1 Degree of annotation 25 CalcNoise no -1 Calculate noise parameters 26 SortNoise NoiseSortOff -1 Sort Noise Contribution by: Value/1, Name/2 (default: 0/NoOutput) 27 NoiseThresh '' -1 Noise Contribution Threshold 28 BandwidthForNoise 1.0Hz 0 Bandwidth for noise analysis 29 Freq '' 0 Frequency if not being swept 30 Other '' -1 Output string to netlist END_ELEMENT S_StabCircle S_StabCircle 1 1 Function list(our_s_stabcir=s_stab_circle(S,51)) -1 s_stab_circle(2x2 S_matrix,num_of_pts) END_ELEMENT SampleHoldSML SampleHoldSML 1 1 Fnom 0Hz 0 Nominal Input and Output Frequency END_ELEMENT Sampler Sampler 4 1 Ton 1nsec 6 ON-State pulse width, switch in low impedance state 2 Ron 1ohm 1 ON-State resistance, switch in low impedance state 3 S11 0 -1 Input reflection coefficient 4 Z0 50ohm 1 Input port characteristic impedance END_ELEMENT SerialParallel SerialParallel 5 1 InputRate 50KHz 0 Serial Input Data Clock Rate 2 LSB_First y_n1 -1 Serial Data Arrives with Least Significant Bit First 3 Delay 0.0nsec 6 Initial Synchronization Delay 4 OutputBits 4 -1 Number of Bits in Output Word 5 IntegerOut y_n1 -1 Scale output data as integers instead of from -1 to 1 END_ELEMENT Short Short 5 1 Mode 0 -1 Mode: 0 => short, >0 => DC block, <0 => DC feed 2 C '' 4 DC block capacitance (transient only) 3 L '' 3 DC feed inductance(transient only) 4 Gain '' -1 Current gain 5 wImax '' 10 Maximum current (warning) END_ELEMENT SmGamma1 SmGamma1 1 1 Function list(our_smg1=sm_gamma1(S)) -1 sm_gamma1(2x2 S_matrix) END_ELEMENT SmGamma2 SmGamma2 1 1 Function list(our_smg2=sm_gamma2(S)) -1 sm_gamma2(2x2 S_matrix) END_ELEMENT SmY1 SmY1 1 1 Function list(our_smy1=sm_y1(S,PortZ1)) -1 sm_y1(2x2 S_matrix, input_port_imped) END_ELEMENT SmY2 SmY2 1 1 Function list(our_smy2=sm_y2(S,PortZ2)) -1 sm_y2(2x2 S_matrix, output_port_imped) END_ELEMENT SmZ1 SmZ1 1 1 Function list(our_smz1=sm_z1(S,PortZ1)) -1 sm_z1(2x2 S_matrix, input_port_imped) END_ELEMENT SmZ2 SmZ2 1 1 Function list(our_smz2=sm_z2(S,PortZ2)) -1 sm_z2(2x2 S_matrix, output_port_imped) END_ELEMENT StabFact StabFact 1 1 Function list(our_k=stab_fact(S)) -1 stab_fact(2x2 S_matrix) END_ELEMENT StabMeas StabMeas 1 1 Function list(our_b=stab_meas(S)) -1 stab_meas(2x2 S_matrix) END_ELEMENT Statz_Model Statz_Model 57 1 NFET y_n1 -1 Model Type - YES or NO 2 PFET y_n0 -1 Model Type - YES or NO 3 Idsmod 3 -1 1=CQ 2=CC 3=Statz 4=Materka 5=Tajima 6=symbolic 7=TOM 8=Modified Materka 4 Vto '' 9 Threshold voltage, V 5 Beta '' -1 Transconductance parameter, A/V^2 6 Lambda '' -1 Channel length modulation parameter, 1/V 7 Alpha '' -1 Current saturation parameter, 1/V 8 B '' -1 Doping tail extending parameter 9 Tnom '' 12 Nominal ambient temperature, Celsius 10 Idstc '' -1 Ids temperature coefficient 11 Vbi '' 9 Built-in gate potential, V 12 Tau '' 6 Transit time under gate, S 13 Betatce '' -1 BETA Exponential Temperature Coefficient, %/Degree C 14 Delta1 '' 9 Capacitance saturation transition voltage parameter, V 15 Delta2 '' 9 Capacitance threshold transition voltage parameter, V 16 Gscap '' -1 0=none 1=linear 2=junction 3=Statz Charge 5=Statz Cap 17 Cgs '' 4 Zero-bias G-S junction Cap., F 18 Gdcap '' 4 0=none 1=linear 2=junction 3=Statz Charge 5=Statz Cap 19 Cgd '' 4 Zero-bias G-D junction Cap., F 20 Rgd '' 1 Gate Drain resistance, Ohm 21 Tqm '' -1 Temperature coefficient for triquint junction capacitance 22 Vmax '' 9 Maximum junction voltage before capacitance limiting 23 Fc '' -1 Coefficient for forward-bias depletion cap. 24 Rd '' 1 Drain ohmic resistance, Ohm 25 Rg '' 1 Gate resistance, Ohm 26 Rs '' 1 Source ohmic resistance, Ohm 27 Ld '' 3 Drain inductance, H 28 Lg '' 3 Gate inductance, H 29 Ls '' 3 Source inductance, H 30 Cds '' 4 Drain-source Cap., F 31 Crf '' 4 Used with RC to model freq. dependent output conductance, F 32 Rc '' 1 Used with CRF to model freq. dependent output conductance (0. means infinity), Ohm 33 Gsfwd '' -1 0=none 1=linear 2=diode 34 Gsrev '' -1 0=none 1=linear 2=diode 35 Gdfwd '' -1 0=none 1=linear 2=diode 36 Gdrev '' -1 0=none 1=linear 2=diode 37 Vjr '' 9 Breakdown junction potential 38 Is '' 10 Gate junction saturation current, A 39 Ir '' 10 Gate rev saturation current, A 40 Imax '' 10 Explosion current, A 41 Xti '' -1 Saturation Current Temperature Exponent 42 N '' -1 Gate junction emission coefficient 43 Eg '' -1 Energy Gap for Temperature Effect on IS 44 Vbr '' 9 Gate junction reverse bias breakdown voltage (0. means infinity), V 45 Vtotc '' -1 VTO Temperature Coefficient, V/Degree C 46 Rin '' 1 Channel resistance, Ohm 47 Taumdl y_n0 -1 Use 2nd order Bessel polynomial to model tau effect in transient 48 Fnc '' 0 Flicker noise corner frequency 49 R '' -1 Gate noise coefficient 50 C '' -1 Gate-drain noise correlation coefficient. 51 P '' -1 Drain noise coefficient 52 wVgfwd '' 9 Gate junction forward bias (warning), V 53 wBvgs '' 9 Gate-source reverse breakdown voltage (warning), V 54 wBvgd '' 9 Gate-drain reverse breakdown voltage (warning), V 55 wBvds '' 9 Drain-source breakdown voltage (warning), V 56 wIdsmax '' 10 Maximum drain-source current (warning), A 57 wPmax '' 8 Maximum power dissipation (warning), W END_ELEMENT SweepPlan SweepPlan 4 1 SweepPlanParm list(prm("LinearStart",1.0,10.0,1.0,)) -1 Sweep Plan Parameters 2 UseSweepPlan '' -1 Flag to indicate use of SweepPlan 3 SweepPlan '' -1 SWEEP plan instance/path name to append to sweep 4 Sort 'LINEAR START STEP' -1 Single point END_ELEMENT SwitchV SwitchV 5 1 Model SWITCHVM1 -1 Model instance name 2 R1 1.0ohm 1 Resistance at voltage 1 3 V1 0.0V 9 Voltage 1 4 R2 1.0Mohm 1 Resistance at voltage 2 5 V2 1.0V 9 Voltage 2 END_ELEMENT SwitchV_Model SwitchV_Model 4 1 R1 1.0ohm 1 Resistance at voltage 1 2 V1 0.0V 9 Voltage 1 3 R2 1.0Mohm 1 Resistance at voltage 2 4 V2 1.0V 9 Voltage 2 END_ELEMENT TAPIND1 TAPIND1 7 1 N1 5.0 -1 Number of turns between pins 1 and 3 2 N2 10.0 -1 Number of turns between pins 2 and 3 3 D 210.0mils 5 Diameter of coil 4 L 400.0mils 5 Length of coil 5 WD 32.0mils 5 Wire diameter 6 Rho 1.0 -1 Metal Resistivity (Relative to copper) 7 Temp '' 12 Physical temperature END_ELEMENT TAPIND2 TAPIND2 7 1 N1 5.0 -1 Number of turns between pins 1 and 3 2 N2 10.0 -1 Number of turns between pins 2 and 3 3 D 210.0mils 5 Diameter of coil 4 L 400.0mils 5 Length of coil 5 AWG 20 -1 Wire gauge 6 Rho 1.0 -1 Metal Resistivity (Relative to copper) 7 Temp '' 12 Physical temperature END_ELEMENT TEST_MEANDER_FINAL TEST_MEANDER_FINAL 16 1 N 0 -1 Number of points (not including mousepoint) 2 W 10.0mils 5 Width of meander line 3 Subst MSub1 -1 Substrate 4 Layer smt_cond -1 Layer 5 X0 0mils 5 XOrigin of (U,V) -- not used in shape directly 6 Y0 0mils 5 YOrigin of (U,V) -- not used in shape directly 7 AbsA 0deg 7 Angle CCW of positive U axis with positive X axis -- not used in shape directly 8 A 0deg 7 Angle CCW between shape and PA's port angle 9 CType 0 -1 0=mitre, 1=circle, 2=square 10 MP 30 -1 Mitre percentage 11 R 5.0mils 5 Circle endpoint radius 12 PA '' -1 Name of pin attached to the start of this meander line -- not used in shape directly 13 PB '' -1 Name of pin attached to the end of this meander line -- not used in shape directly 14 StripType MICROSTRIP -1 Type; can be MICROSTRIP, PCBTRACE, or STRIPLINE 15 FixedLength 0mils 5 Placeholder for returned fixed length generated during shape calc 16 MovableLength 0mils 5 Placeholder for returned movable length generated during shape calc END_ELEMENT TEST_MEANDER_FIXED TEST_MEANDER_FIXED 15 1 N 0 -1 Number of points (not including mousepoint) 2 W 10.0mils 5 Width of meander line 3 Subst MSub1 -1 Substrate 4 Layer smt_cond -1 Layer 5 X0 0mils 5 XOrigin of (U,V) -- not used in shape directly 6 Y0 0mils 5 YOrigin of (U,V) -- not used in shape directly 7 AbsA 0deg 7 Angle CCW of positive U axis with positive X axis -- not used in shape directly 8 A 0deg 7 Angle CCW between shape and PA's port angle 9 CType 0 -1 0=mitre, 1=circle, 2=square 10 MP 50 -1 Mitre percentage 11 R 5.0mils 5 Circle endpoint radius 12 PA '' -1 Name of pin attached to the start of this meander line -- not used in shape directly 13 PB '' -1 Name of pin attached to the end of this meander line -- not used in shape directly 14 StripType MICROSTRIP -1 Type; can be MICROSTRIP, PCBTRACE, or STRIPLINE 15 FixedLength 0mils 5 Placeholder for returned fixed length generated during shape calc END_ELEMENT TEST_MEANDER_MOVABLE TEST_MEANDER_MOVABLE 15 1 N 0 -1 Number of points (not including mousepoint) 2 W 10.0mils 5 Width of meander line 3 Subst MSub1 -1 Substrate 4 Layer smt_cond -1 Layer 5 X0 0mils 5 XOrigin of (U,V) -- not used in shape directly 6 Y0 0mils 5 YOrigin of (U,V) -- not used in shape directly 7 AbsA 0deg 7 Angle CCW of positive U axis with positive X axis -- not used in shape directly 8 A 0deg 7 Angle CCW between shape and PA's port angle 9 CType 0 -1 0=mitre, 1=circle, 2=square 10 MP 50 -1 Mitre percentage 11 R 5.0mils 5 Circle endpoint radius 12 PA '' -1 Name of pin attached to the start of this meander line -- not used in shape directly 13 PB '' -1 Name of pin attached to the end of this meander line -- not used in shape directly 14 StripType MICROSTRIP -1 Type; can be MICROSTRIP, PCBTRACE, or STRIPLINE 15 MovableLength 0mils 5 Placeholder for returned movable length generated during shape calc END_ELEMENT TF TF 1 1 T 1.00 -1 turn END_ELEMENT TF3 TF3 2 1 T1 1.00 -1 turn 1 2 T2 1.00 -1 turn 2 END_ELEMENT TFC TFC 11 1 W 25.0mils 5 Conductor width 2 L 10.0mils 5 Conductor length 3 T 0.2mils 5 Dielectric thickness 4 Er 5.33 -1 Dielectric constant 5 Rho 1.0 -1 Metal resistivity (relative to gold) 6 TanD 0 -1 Dielectric loss tangent 7 Temp '' 12 Physical temperature 8 CO 5.0mils 5 (for Layout option) Conductor overlap 9 DO 5.0mils 5 (for Layout option) Dielectric overlap 10 DielLayer smt_diel -1 (for Layout option) Layer on which the dielectric is drawn 11 Cond2Layer smt_cond2 -1 (for Layout option) Layer on which the airbridge is drawn END_ELEMENT TFR TFR 7 1 Subst MSub1 -1 Substrate instance name 2 W 25.0mils 5 Conductor width 3 L 10.0mils 5 Conductor length 4 Rs 50.0ohm 1 Sheet resistivity 5 Freq 0Hz 0 Frequency for scaling sheet resistivity 6 Temp '' 12 Physical temperature 7 CO 5.0mils 5 (for Layout option) Conductor offset; distance from edge of conductor END_ELEMENT TLIN TLIN 3 1 Z 50.0ohm 1 Characteristic Impedance 2 E 90deg 7 Electrical Length 3 F 1GHz 0 Reference Frequency for Electrical Length END_ELEMENT TLIN4 TLIN4 3 1 Z 50.0ohm 1 Characteristic Impedance 2 E 90deg 7 Electrical Length 3 F 1GHz 0 Reference Frequency for Electrical Length END_ELEMENT TLINP TLINP 10 1 Z 50.0ohm 1 Characteristic Impedance 2 L 1000.0mils 5 Length 3 K 2.1 -1 Effective Dielectric Constant 4 A 0.0001 -1 Attenuation (dB / meter) 5 F 1GHz 0 Frequency for Scaling Attenuation 6 TanD 0.002 -1 Dielectric loss tangent 7 Mur 1 -1 Relative permeability 8 TanM 0 -1 Permeability 9 Sigma 0 -1 Dielectric conductivity 10 Temp '' 12 Physical temperature END_ELEMENT TLINP4 TLINP4 10 1 Z 50.0ohm 1 Characteristic Impedance 2 L 1000.0mils 5 Length 3 K 2.1 -1 Effective Dielectric Constant 4 A 0.0001 -1 Attenuation (dB / meter) 5 F 1GHz 0 Frequency for Scaling Attenuation 6 TanD 0.002 -1 Dielectric loss tangent 7 Mur 1 -1 Relative permeability 8 TanM 0 -1 Permeability 9 Sigma 0 -1 Dielectric conductivity 10 Temp '' 12 Physical temperature END_ELEMENT TLOC TLOC 3 1 Z 50.0ohm 1 Characteristic Impedance 2 E 90deg 7 Electrical Length 3 F 1GHz 0 Reference Frequency for Electrical Length END_ELEMENT TLPOC TLPOC 10 1 Z 50.0ohm 1 Characteristic Impedance 2 L 1000.0mils 5 Length 3 K 2.1 -1 Effective Dielectric Constant 4 A 0.0001 -1 Attenuation (dB / meter) 5 F 1GHz 0 Frequency for Scaling Attenuation 6 TanD 0.002 -1 Dielectric loss tangent 7 Mur 1 -1 Relative permeability 8 TanM 0 -1 Permeability 9 Sigma 0 -1 Dielectric conductivity 10 Temp '' 12 Physical temperature END_ELEMENT TLPSC TLPSC 10 1 Z 50.0ohm 1 Characteristic Impedance 2 L 1000.0mils 5 Length 3 K 2.1 -1 Effective Dielectric Constant 4 A 0.0001 -1 Attenuation (dB / meter) 5 F 1GHz 0 Frequency for Scaling Attenuation 6 TanD 0.002 -1 Dielectric loss tangent 7 Mur 1 -1 Relative permeability 8 TanM 0 -1 Permeability 9 Sigma 0 -1 Dielectric conductivity 10 Temp '' 12 Physical temperature END_ELEMENT TLSC TLSC 3 1 Z 50.0ohm 1 Characteristic Impedance 2 E 90deg 7 Electrical Length 3 F 1GHz 0 Reference Frequency for Electrical Length END_ELEMENT TOM_Model TOM_Model 50 1 Idsmod 7 -1 1=CQ 2=CC 3=Statz 4=Materka 5=Tajima 6=symbolic 7=TOM 8=Modified Materka 2 Vto '' 9 Threshold voltage, V 3 Alpha '' -1 Saturation voltage coefficient, 1/V 4 Beta '' -1 Transconductance coefficient, A/V^Q 5 Tqdelta '' -1 Output feedback coefficient, 1/W 6 Tqgamma '' -1 DC drain pull coefficient, dimensionless 7 Tnom '' 12 Nominal ambient temperature, Celsius 8 Q '' -1 Power law exponent, dimensionless 9 Tau '' 6 Conduction current delay time, S 10 Vtotc '' -1 VTO Temperature Coefficient, V/Degree C 11 Betatce '' -1 BETA Exponential Temperature Coefficient, %/Degree C 12 Cgs '' 4 Zero-bias gate-source capacitance, F 13 Cgd '' 4 Zero-bias gate-drain capacitance, F 14 Vbi '' 9 Gate diode built-in potential, V 15 Tqm '' -1 Temperature coefficient for triquint junction capacitance 16 Vmax '' 9 Maximum junction voltage before capacitance limiting 17 Fc '' -1 Depletion capacitance coefficient, dimensionless 18 Delta1 '' 9 Capacitance saturation transition voltage parameter, V 19 Delta2 '' 9 Capacitance threshold transition voltage parameter, V 20 M '' -1 Grading Coefficient 21 Is '' 10 Gate diode saturation current, A 22 N '' -1 Gate diode emission coefficient, dimensionless 23 Eg '' -1 Energy Gap for Temperature Effect on IS 24 Xti '' -1 Saturation Current Temperature Exponent 25 Vbr '' 9 Gate diode breakdown voltage (0. means infinity), V 26 Rg '' 1 Gate ohmic resistance, Ohms 27 Rd '' 1 Drain contact resistance, Ohms 28 Rs '' 1 Source contact resistance, Ohms 29 Trg1 '' -1 Linear temperature coefficient for RG 1/degC 30 Trd1 '' -1 Linear temperature coefficient for RD 1/degC 31 Trs1 '' -1 Linear temperature coefficient for RS 1/degC 32 Cds '' 4 Drain source capacitance, F 33 Rgmet '' 1 Gate metal resistance, Ohms 34 Vtosc '' 9 Threshold voltage scaling coefficient, V 35 Ris '' 1 Source end channel resistance, Ohms 36 Rid '' 1 Drain end channel resistance, Ohms 37 Rdb '' 1 Dispersion source output impedence (0. means infinity), Ohms 38 Cbs '' 4 Dispersion source capacitance, F 39 Fnc '' 0 Flicker noise corner frequency 40 R '' -1 Gate noise coefficient 41 P '' -1 Drain noise coefficient 42 Taumdl y_n0 -1 Use 2nd order Bessel polynomial to model tau effect in transient 43 Ugw '' 5 Unit gate width of device(default: 1um) 44 Ngf '' -1 Number of device gate fingers(default: 1) 45 wVgfwd '' 9 Gate junction forward bias (warning), V 46 wBvgs '' 9 Gate-source reverse breakdown voltage (warning), V 47 wBvgd '' 9 Gate-drain reverse breakdown voltage (warning), V 48 wBvds '' 9 Drain-source breakdown voltage (warning), V 49 wIdsmax '' 10 Maximum drain-source current (warning), A 50 wPmax '' 8 Maximum power dissipation (warning), W END_ELEMENT Tajima_Model Tajima_Model 44 1 NFET y_n1 -1 Model Type - YES or NO 2 PFET y_n0 -1 Model Type - YES or NO 3 Idsmod 5 -1 1=CQ 2=CC 3=Statz 4=Materka 5=Tajima 6=symbolic 7=TOM 8=Modified Materka 4 Vdss '' 9 Model 5: Drain current saturation voltage, V 5 Vto '' 9 Value of V1 below which Ids = Ids(V1=VTO,Vds), V 6 Beta2 '' -2 Pinch-off change with Vds, 1/V 7 Ta '' -2 Model 5: a coef 8 Tb '' -2 Model 5: b coef 9 Tm '' -2 Model 5: m coef 10 Idss '' 10 Model 4: Idss value, A 11 Rin '' 1 Channel resistance, Ohm 12 Fc '' -1 Coefficient for forward-bias depletion cap. 13 Gscap '' -1 0=none 1=linear 2=junction 3=Statz Charge 5=Statz Cap 14 Cgs '' 4 Zero-bias G-S junction cap., F 15 Gdcap '' -1 0=none 1=linear 2=junction 3=Statz Charge 5=Statz Cap 16 Cgd '' 4 Zero-bias G-D junction cap., F 17 Rd '' 1 Drain ohmic resistance, Ohm 18 Rg '' 1 Gate resistance, Ohm 19 Rs '' 1 Source ohmic resistance, Ohm 20 Ld '' 3 Drain inductance, H 21 Lg '' 3 Gate inductance, H 22 Ls '' 3 Source inductance, H 23 Cds '' 4 Drain-source cap., F 24 Crf '' 4 Used with RDS to model freq. dependent output conductance, F 25 Rc '' 1 Additional output resistance for RF operation (0. means infinity), Ohm 26 Gsfwd '' -1 0=none 1=linear 2=diode 27 Gsrev '' -1 0=none 1=linear 2=diode 28 Gdfwd '' -1 0=none 1=linear 2=diode 29 Gdrev '' -1 0=none 1=linear 2=diode 30 Vbi '' 9 Built-in gate potential, V 31 Is '' 10 Gate junction saturation current, A 32 Imax '' 10 Explosion current, A 33 N '' -1 Gate Junction emission coefficient 34 Fnc '' 0 Flicker noise corner frequency 35 R '' -1 Gate noise coefficient 36 P '' -1 Drain noise coefficient 37 C '' -1 Gate-drain noise correlation coefficient. 38 Tnom '' 12 Nominal ambient temperature, Celsius 39 wVgfwd '' 9 Gate junction forward bias (warning), V 40 wBvgs '' 9 Gate-source reverse breakdown voltage (warning), V 41 wBvgd '' 9 Gate-drain reverse breakdown voltage (warning), V 42 wBvds '' 9 Drain-source breakdown voltage (warning), V 43 wIdsmax '' 10 Maximum drain-source current (warning), A 44 wPmax '' 8 Maximum power dissipation (warning), W END_ELEMENT Term Term 4 1 Num 1 -1 Port number 2 Z 50ohm 1 Reference impedance, use 1+j*0 for complex 3 Noise y_n1 -1 Enable/disable port thermal noise 4 Vdc '' 9 Open circuit DC voltage END_ELEMENT TimeDelay TimeDelay 3 1 Delay 1.sec 6 Time Delay 2 RTConj y_n0 -1 Reverse Transmission Conjugate, Yes to apply 3 ZRef 50.ohm 1 Reference Impedance for All Ports END_ELEMENT TimeDelta TimeDelta 5 1 Direction1 1 -1 Direction One 2 Direction2 1 -1 Direction Two 3 Thresh1 0V 9 Thresh One 4 Thresh2 0V 9 Thresh Two 5 Scale 1e+6 -1 Scale Factor END_ELEMENT TimeFrq TimeFrq 3 1 Direction 1 -1 Direction One 2 Thresh 0V 9 Thresh One 3 Scale 1e+6 -1 Scale Factor END_ELEMENT TimePeriod TimePeriod 3 1 Direction 1 -1 Direction One 2 Thresh 0V 9 Thresh One 3 Scale 1e+6 -1 Scale Factor END_ELEMENT TimeStamp TimeStamp 3 1 Direction 1 -1 Direction One 2 Thresh 0V 9 Thresh One 3 Scale 1e+6 -1 Scale Factor END_ELEMENT Tran Tran 35 1 StartTime 0.0nsec 6 Initial time in this analysis 2 StopTime 100.0nsec 6 Final time in this analysis 3 MaxTimeStep 1.0nsec 6 Maximum time-step for integration 4 MinTimeStep '' 6 Minimum time-step for integration 5 LimitStepForTL YES -1 Limit timestep to half of minimum transmission line delay. 6 TimeStepControl TimeStepTruncError -1 Timestep method 7 TruncTol 7.0 -1 Local truncation error overestimation factor 8 ChargeTol 1.0e-14 -1 Accuracy for charges in lte 9 IntegMethod IntegTrapezoidal -1 Use Gear integration instead of trapezoidal 10 MaxGearOrder 6 -1 Maximum order for Gear integration 11 Mu 0.5 -1 Coefficient for mixing trapezoidal and backward Euler 12 Freq '' 0 Frequency of fundamentals(repeatable) 13 ImpApprox NO -1 Use Approximate models 14 ShortTL_Delay 1.0psec 6 Approximate short transmission lines. 15 ImpMaxFreq '' 0 Maximum frequency for device evaluation. 16 ImpDeltaFreq '' 0 Sample spacing in frequency. 17 ImpMaxPts 4096 -1 Maximum allowed points in impulse response. 18 ImpRelTrunc 1.0e-4 -1 Relative impulse Response truncation factor. 19 ImpAbsTrunc 1.0e-7 -1 Absolute impulse Response truncation factor. 20 ImpInterpOrder ImpInterpOrder1 -1 Interpolation order during the convolution. 21 ImpMode CModeDiscrete -1 Convolution mode. 22 ImpWindow WindowTypeHanning -1 Smoothing Window. 23 ImpNoncausalLength 32 -1 Non-causal function impulse response order. 24 UseInitCond NO -1 Use user specified initial condition. 25 LoadGminDC NO -1 Connect every node to ground with a big resistor at initial dc analysis 26 CheckKCL YES -1 Perform KCL check for convergence. 27 CheckOnlyDeltaV YES -1 Check only delta voltage for convergence. 28 OverloadAlert NO -1 Check for strange behavior at every timestep. 29 DeviceBypass NO -1 Skip device evaluation if voltage changes are small between iterations 30 MaxIters 10 -1 Maximum number of iterations per time-step. 31 MaxItersDC 200 -1 Maximum number of iterations at initial dc analysis before source stepping. 32 DevOpPtLevel DeviceOpNone -1 Level of devices DC Operating Point Data to ouput 33 StatusLevel 2 -1 Degree of annotation 34 NestLevel 2 -1 Levels of subcircuits to output 35 Other '' -1 Output string to netlist END_ELEMENT Transformer Transformer 2 1 N 1 -1 turns ratio 2 ZRef 50.ohm 1 reference impedance for all ports END_ELEMENT TransformerG TransformerG 2 1 N 1 -1 turns ratio 2 ZRef 50.ohm 1 reference impedance for all ports END_ELEMENT TwoPort TwoPort 7 1 S21 1 -1 Forward Transmission Coefficient, Complex Number: 1+j*0, polar(), dbpolar() 2 S12 1 -1 Reverse Transmission Coefficient, Complex Number: 1+j*0, polar(), dbpolar() 3 S11 0 -1 Port1 Reflection Coefficient, Complex Number: 1+j*0, polar(), dbpolar() 4 S22 0 -1 Port2 Reflection Coefficient, Complex Number: 1+j*0, polar(), dbpolar() 5 ZRef 50ohm 1 Reference Impedance for All Ports 6 Temp '' 12 Temperature in degrees Celsius 7 Delay '' 6 Time Delay END_ELEMENT UFINL UFINL 4 1 Subst FSub1 -1 Substrate instance name 2 D 20.0mils 5 Width of gap 3 L 1000.0mils 5 Length of finline 4 Temp '' 12 Physical temperature END_ELEMENT UFINLT UFINLT 3 1 Subst FSub1 -1 Substrate instance name 2 D 20.0mils 5 Width of gap 3 Temp '' 12 Physical temperature END_ELEMENT #VAR VAR 1 # 1 Variable_Value list(prm("VarFormStdForm",X,1.0)) -1 Variable equation #END_ELEMENT VBIC_Model VBIC_Model 96 1 NPN y_n1 -1 Model Type - YES or NO 2 PNP y_n0 -1 Model Type - YES or NO 3 Tnom '' 12 Nominal ambient temperature, Celsius 4 Rcx '' 1 Extrinsic Collector Resistance, Ohm 5 Rci '' 1 Intrinsic Collector Resistance, Ohm 6 Vo '' 9 Epi drift saturation voltage, V 7 Gamm '' -1 Epi doping parameter 8 Hrcf '' -1 High current RC factor 9 Rbx '' 1 Extrinsic Base Resistance, Ohm 10 Rbi '' 1 Intrinsic Base Resistance, Ohm 11 Re '' 1 Emitter Resistance, Ohm 12 Rs '' 1 Substrate Resistance, Ohm 13 Rbp '' 1 Parasitic Base Resistance, Ohm 14 Is '' 10 Transport Saturation Current, A 15 Nf '' -1 Forward Emission Coefficient 16 Nr '' -1 Reverse Emission Coefficient 17 Fc '' -1 Forward-bias Junction Cap. Threshold 18 Cbeo '' 4 B-E Small Signal Cap., F 19 Cje '' 4 B-E Zero-bias Junction Cap., F 20 Pe '' -1 B-E Grading Coefficient 21 Me '' -1 B-E Junction Exponent 22 Aje '' -1 B-E Capacitance Smoothing factor 23 Cbco '' 4 B-C Small Signal Cap., F 24 Cjc '' 4 B-C Zero-bias Junction Cap., F 25 Qco '' -1 Collector Charge at Zero-bias, C 26 Cjep '' 4 B-E Zero-bias Extrinsic Cap., F 27 Pc '' -1 B-C Grading Coefficient 28 Mc '' -1 B-C Junction Exponent 29 Ajc '' -1 B-C Capacitance Smoothing factor 30 Cjcp '' 4 B-C Zero-bias Extrinsic Cap., F 31 Ps '' -1 C-S Grading Coefficient 32 Ms '' -1 C-S Junction Exponent 33 Ajs '' -1 C-S Capacitance Smoothing factor 34 Ibei '' 10 Ideal B-E Saturation Current 35 Wbe '' -1 Portion of Ibei from Vbei 36 Nei '' -1 Ideal B-E Emission Coefficient 37 Iben '' 10 Non-ideal B-E Saturation Current 38 Nen '' -1 Non-ideal B-E Emission Coefficient 39 Ibci '' 10 Ideal B-C Saturation Current 40 Nci '' -1 Ideal B-C Emission Coefficient 41 Ibcn '' 10 Non-ideal B-C Saturation Current 42 Ncn '' -1 Non-ideal B-C Emission Coefficient 43 Isp '' 10 Parasitic Transport Saturation Current 44 Wsp '' -1 Portion of Iccp from Vbep 45 Nfp '' -1 Parasitic Forward Emission Coefficient 46 Ibeip '' 10 Ideal Parasitic B-E Saturation Current 47 Ibenp '' 10 Non-ideal Parasitic B-E Saturation Current 48 Ibcip '' 10 Ideal Parasitic B-C Saturation Current 49 Ncip '' -1 Ideal Parasitic B-C Emission Coefficient 50 Ibcnp '' 10 Non-ideal Parasitic B-C Saturation Current 51 Avc1 '' -1 B-C Weak Avalanche Parameter 1 52 Avc2 '' -1 B-C Weak Avalanche Parameter 2 53 Ncnp '' -1 Non-ideal Parasitic B-C Emission Coefficient 54 Vef '' 9 Forward Early Voltage (0. Means Infinity), V 55 Ver '' 9 Reverse Early Voltage (0. Means Infinity), V 56 Ikf '' 10 Forward Knee Current, A 57 Ikr '' 10 Reverse Knee Current, A 58 Ikp '' 10 Parasitic Knee Current, A 59 Tf '' 6 Ideal Forward Transit Time, S 60 Qtf '' -1 Variation of TF with Base-Width Modulation 61 Xtf '' -1 Coefficient of Bias Dependence for TF 62 Vtf '' -1 Coefficient of Vbc Dependence for TF 63 Itf '' -1 Coefficient of Icc Dependence for TF 64 Tr '' 6 Ideal Reverse Transit Time, S 65 Td '' 6 Forward Excess-Phase Delay Time, S 66 Kfn '' -1 Flicker Noise Coefficient 67 Afn '' -1 Flicker Noise Exponent 68 Bfn '' -1 Flicker Noise Frequency Exponent 69 Xre '' -1 Temperature Exponent of Emitter Resistance 70 Xrb '' -1 Temperature Exponent of Base Resistance 71 Xrc '' -1 Temperature Exponent of Collector Resistance 72 Xrs '' -1 Temperature Exponent of Substrate Resistance 73 Xvo '' -1 Temperature Exponent of VO 74 Ea '' -1 Activation Energy for IS, eV 75 Eaie '' -1 Activation Energy for IBEI, eV 76 Eaic '' -1 Activation Energy for IBCI/IBEIP, eV 77 Eais '' -1 Activation Energy for IBCIP, eV 78 Eane '' -1 Activation Energy for IBEN, eV 79 Eanc '' -1 Activation Energy for IBCN/IBENP, eV 80 Eans '' -1 Activation Energy for IBCNP, eV 81 Xis '' -1 Temperature Exponent of IS 82 Xii '' -1 Temperature Exponent of IBEI/IBCI/IBEIP/IBCIP 83 Xin '' -1 Temperature Exponent of IBEN/IBCN/IBENP/IBCNP 84 Tnf '' -1 Temperature Coefficient of NF 85 Tavc '' -1 Temperature Coefficient of TAVC 86 Rth '' 1 Thermal Resistance, Ohm 87 Cth '' 4 Thermal Capacitance, F 88 Imax '' 10 Explosion current, A 89 wVsubfwd '' 9 Substrate Junction Forward Bias (warning), V 90 wBvsub '' 9 Substrate Junction Reverse Breakdown Voltage (warning), V 91 wBvbe '' 9 Base-Emitter Reverse Breakdown Voltage (warning), V 92 wBvbc '' 9 Base-Collector Reverse Breakdown Voltage (warning), V 93 wVbcfwd '' 9 Base-Collector Forward Bias (warning), V 94 wIbmax '' 10 Maximum Base Current (warning), A 95 wIcmax '' 10 Maximum Collector Current (warning), A 96 wPmax '' 8 Maximum Power Dissipation (warning), W END_ELEMENT VBIC_NPN VBIC_NPN 5 1 Model VBICM1 -1 Model instance name 2 Scale '' -1 Scaling Factor 3 Region '' -1 DC operating region, 0=off, 1=on, 2=rev, 3=sat 4 Temp '' 12 Device operating temperature 5 Mode simtype_nonlin -1 Simulation Mode for This Device END_ELEMENT VBIC_PNP VBIC_PNP 5 1 Model VBICM1 -1 Model instance name 2 Scale '' -1 Scaling Factor 3 Region '' -1 DC operating region, 0=off, 1=on, 2=rev, 3=sat 4 Temp '' 12 Device operating temperature 5 Mode simtype_nonlin -1 Simulation Mode for This Device END_ELEMENT VCCS VCCS 5 1 G 1S 2 Complex transconductance, e.g. polar(1 S, 45), or P(j*omega)/Q(j*omega) 2 T 1.0nsec 6 Time delay 3 R1 1e100ohm 1 Input Resistance 4 R2 1e100ohm 1 Output Resistance 5 F 0.0GHz 0 Frequency at which G magnitude is down 3 dB END_ELEMENT VCCS_Z VCCS_Z 4 1 Gain 1 -1 Constant gain term 2 Num 1 -1 Numerator coefficients of transfer function 3 Den list(1,sqrt(2),1) -1 Denominator coefficients of transfer function 4 TimeStep timestep 6 Sampling time period END_ELEMENT VCO VCO 6 1 Kv 1.0KHz 0 Frequency Tuning Sensitivity (Hz/Volt) 2 Freq 1GHz 0 Fundamental Frequency 3 P (-j*dbmtow(0)) 8 Power into Rout Load at Fundamental Frequency, complex value 4 Rout 50ohm 1 Output Resistance 5 Delay timestep 6 Transit Time Delay Added to Input Tuning Voltage 6 Harmonics 'list(-0.01, 0.002)' -1 Ratio of Harmonic Voltage to Fundamental Voltage, complex value END_ELEMENT VCO_DivideByN VCO_DivideByN 6 1 VCO_Freq '(10MHz * _v1)' 0 Frequency Deviation from F0, (function of _v1) 2 F0 1GHz 0 VCO Center Frequency 3 N 10 -1 Nominal Divide Number (with dN = 0) 4 Rout 50ohm 1 Output Resistance of VCO 5 Power (dbmtow(0)) 8 Output Power into Rout Load 6 Delay 50nsec 6 Transit Time Delay Added to Input Tuning Voltage END_ELEMENT VCVS VCVS 5 1 G 1 -1 Complex voltage gain, e.g. polar(10, 45), or P(j*omega)/Q(j*omega) 2 T 1.0nsec 6 Time delay 3 R1 1e100ohm 1 Input Resistance 4 R2 0ohm 1 Output Resistance 5 F 0.0GHz 0 Frequency at which G magnitude is down 3 dB END_ELEMENT VCVS_Z VCVS_Z 4 1 Gain 1 -1 Constant gain term 2 Num 1 -1 Numerator coefficients of transfer function 3 Den list(1,sqrt(2),1) -1 Denominator coefficients of transfer function 4 TimeStep timestep 6 Sampling time period END_ELEMENT VIA VIA 8 1 D1 15.0mils 5 Diameter at pin n1 2 D2 10.0mils 5 Diameter at pin n2 3 H 25.0mils 5 Substrate thickness 4 T 0.15mils 5 Conductor thickness 5 W 10.0mils 5 (for Layout option) Width of conductor attached to via hole 6 Cond1Layer cond -1 (for Layout option) Layer on which the bottom transitional metal is drawn 7 HoleLayer hole -1 (for Layout option) Layer on which the via-hole is drawn 8 Cond2Layer cond2 -1 (for Layout option) Layer on which the top transitional metal is drawn END_ELEMENT VIA2 VIA2 9 1 D 15.0mils 5 Hole diameter 2 H 25.0mils 5 Substrate thickness 3 T 0.15mils 5 Metal thickness 4 Rho 1.0 -1 Metal resistivity (relative to gold) 5 W 25.0mils 5 Width of the via pad (assumed square) 6 Temp '' 12 Physical temperature 7 Cond1Layer cond -1 (for Layout option) Layer on which the bottom transitional metal is drawn 8 HoleLayer hole -1 (for Layout option) Layer on which the via-hole is drawn 9 Cond2Layer cond2 -1 (for Layout option) Layer on which the top transitional metal is drawn END_ELEMENT VIAGND VIAGND 10 1 Subst MSub1 -1 Substrate instance name 2 D 15.0mils 5 Hole diameter 3 T 0.15mils 5 Metal thickness 4 Rho 1.0 -1 Metal resistivity (relative to gold) 5 W 25.0mils 5 Width of the via pad (assumed square) 6 Temp '' 12 Physical temperature 7 Cond1Layer cond -1 (for Layout option) Layer on which the bottom transitional metal is drawn 8 HoleLayer hole -1 (for Layout option) Layer on which the via-hole is drawn 9 PO 0m 5 Pad offset from connection pin 10 Pad '' -1 Pad Shape END_ELEMENT VIAHS VIAHS 12 1 D 15.0mils 5 Diameter of via hole 2 ViaType Blind -1 Type of Via Drill Hole (Blind or ThruHole) 3 H 25.0mils 5 Substrate thickness 4 T 0.15mils 5 Conductor thickness 5 Dpad1 25.0mils 5 (for Layout option) Width of via pad at pin 1 6 Dpad2 20.0mils 5 (for Layout option) Width of via pad at pin 2 7 Angle 90.0deg 7 (for Layout option) Angle betwen via pads 8 Cond1Layer cond -1 (for Layout option) Layer on which the pad at pin 1 is drawn 9 HoleLayer hole -1 (for Layout option) Layer on which the via hole is drawn 10 Cond2Layer cond2 -1 (for Layout option) Layer on which the pad at pin 2 is drawn 11 StartLayer cond -1 (for Layout option) Start Layer for a Blind Via 12 StopLayer cond2 -1 (for Layout option) Stop Layer for a Blind Via END_ELEMENT VIASC VIASC 12 1 D 15.0mils 5 Diameter of via hole 2 ViaType Blind -1 Type of Via Drill Hole (Blind or ThruHole) 3 H 25.0mils 5 Substrate thickness 4 T 0.15mils 5 Conductor thickness 5 Dpad1 25.0mils 5 (for Layout option) Diameter of via pad at pin 1 6 Dpad2 20.0mils 5 (for Layout option) Diameter of via pad at pin 2 7 Angle 90.0deg 7 (for Layout option) Angle betwen via pads 8 Cond1Layer cond -1 (for Layout option) Layer on which the pad at pin 1 is drawn 9 HoleLayer hole -1 (for Layout option) Layer on which the via hole is drawn 10 Cond2Layer cond2 -1 (for Layout option) Layer on which the pad at pin 2 is drawn 11 StartLayer cond -1 (for Layout option) Start Layer for a Blind Via 12 StopLayer cond2 -1 (for Layout option) Stop Layer for a Blind Via END_ELEMENT VIAFC VIAFC 12 1 D 15.0mils 5 Diameter of via hole 2 ViaType Blind -1 Type of Via Drill Hole (Blind or ThruHole) 3 H 25.0mils 5 Substrate thickness 4 T 0.15mils 5 Conductor thickness 5 Dpad1 25.0mils 5 (for Layout option) Diameter of via pad at pin 1 6 Dpad2 20.0mils 5 (for Layout option) Diameter of via pad at pin 2 7 Angle 0.0deg 7 (for Layout option) Angle betwen via pads 8 Cond1Layer cond -1 (for Layout option) Layer on which the pad at pin 1 is drawn 9 HoleLayer hole -1 (for Layout option) Layer on which the via hole is drawn 10 Cond2Layer cond2 -1 (for Layout option) Layer on which the pad at pin 2 is drawn 11 StartLayer cond -1 (for Layout option) Start Layer for a Blind Via 12 StopLayer cond2 -1 (for Layout option) Stop Layer for a Blind Via END_ELEMENT VIAQC VIAQC 14 1 D 15.0mils 5 Diameter of via hole 2 ViaType Blind -1 Type of Via Drill Hole (Blind or ThruHole) 3 H 25.0mils 5 Substrate thickness 4 T 0.15mils 5 Conductor thickness 5 Dpad1 25.0mils 5 (for Layout option) Diameter of via pad at pin 1 6 Dpad2 20.0mils 5 (for Layout option) Diameter of via pad at pin 2 7 Angle 90.0deg 7 (for Layout option) Angle betwen via pads 8 W1 15.0mils 5 (for Layout option) Width of transmission line connected to pin 1 9 W2 15.0mils 5 (for Layout option) Width of transmission line connected to pin 2 10 Cond1Layer cond -1 (for Layout option) Layer on which the pad at pin 1 is drawn 11 HoleLayer hole -1 (for Layout option) Layer on which the via hole is drawn 12 Cond2Layer cond2 -1 (for Layout option) Layer on which the pad at pin 2 is drawn 13 StartLayer cond -1 (for Layout option) Start Layer for a Blind Via 14 StopLayer cond2 -1 (for Layout option) Stop Layer for a Blind Via END_ELEMENT VIASTD VIASTD 16 1 D 15.0mils 5 Diameter of via hole 2 ViaType Blind -1 Type of Via Drill Hole (Blind or ThruHole) 3 H 25.0mils 5 Substrate thickness 4 T 0.15mils 5 Conductor thickness 5 Dpad1 25.0mils 5 (for Layout option) Diameter of via pad at pin 1 6 Dpad2 20.0mils 5 (for Layout option) Diameter of via pad at pin 2 7 Angle 90.0deg 7 (for Layout option) Angle betwen via pads 8 W1 15.0mils 5 (for Layout option) Width of transmission line connected to pin 1 9 W2 15.0mils 5 (for Layout option) Width of transmission line connected to pin 2 10 L1 30.0mils 5 (For Layout option) Length of tear drop of pad at pin 1 11 L2 30.0mils 5 (For Layout option) Length of tear drop of pad at pin 2 12 Cond1Layer cond -1 (for Layout option) Layer on which the pad at pin 1 is drawn 13 HoleLayer hole -1 (for Layout option) Layer on which the via hole is drawn 14 Cond2Layer cond2 -1 (for Layout option) Layer on which the pad at pin 2 is drawn 15 StartLayer cond -1 (for Layout option) Start Layer for a Blind Via 16 StopLayer cond2 -1 (for Layout option) Stop Layer for a Blind Via END_ELEMENT VIATTD VIATTD 16 1 D 15.0mils 5 Diameter of via hole 2 ViaType Blind -1 Type of Via Drill Hole (Blind or ThruHole) 3 H 25.0mils 5 Substrate thickness 4 T 0.15mils 5 Conductor thickness 5 Dpad1 25.0mils 5 (for Layout option) Diameter of via pad at pin 1 6 Dpad2 20.0mils 5 (for Layout option) Diameter of via pad at pin 2 7 Angle 90.0deg 7 (for Layout option) Angle betwen via pads 8 W1 15.0mils 5 (for Layout option) Width of transmission line connected to pin 1 9 W2 15.0mils 5 (for Layout option) Width of transmission line connected to pin 2 10 L1 30.0mils 5 (For Layout option) Length of tear drop of pad at pin 1 11 L2 30.0mils 5 (For Layout option) Length of tear drop of pad at pin 2 12 Cond1Layer cond -1 (for Layout option) Layer on which the pad at pin 1 is drawn 13 HoleLayer hole -1 (for Layout option) Layer on which the hole is drawn 14 Cond2Layer cond2 -1 (for Layout option) Layer on which the pad at pin 2 is drawn 15 StartLayer cond -1 (for Layout option) Start Layer for a Blind Via 16 StopLayer cond2 -1 (for Layout option) Stop Layer for a Blind Via END_ELEMENT VMult VMult 3 1 R1 50.ohm 1 Reference Resistance for Port1 2 R2 50.ohm 1 Reference Resistance for Port2 3 R3 50.ohm 1 Reference Resistance for Port3 END_ELEMENT VSWR VSWR 1 1 Function list(our_vswr=vswr(S11)) -1 vswr(reflection_coeff) END_ELEMENT VSum VSum 0 END_ELEMENT V_1Tone V_1Tone 8 1 V 1V 9 Voltage at center frequency, use polar() for phase 2 Freq 1GHz 0 Center frequency 3 V_USB '' 9 Voltager of upper sideband small signal tone, use polar() for phase 4 V_LSB '' 9 Voltage of lower sideband small-signal tone, use polar() for phase 5 Vdc '' 9 DC voltage 6 Vac 1V 9 AC voltage, use polar() for phase 7 SaveCurrent y_n1 -1 Flag to save branch current 8 FundIndex '' -1 Fundamental Frequency Index (Can Be Used Instead of Specifying Freq") END_ELEMENT V_AC V_AC 4 1 Vdc 0.0V 9 DC voltage 2 Vac 1.0V 9 AC voltage, use polar() for phase 3 Freq freq 0 Frequency 4 SaveCurrent y_n1 -1 Flag to save branch current END_ELEMENT V_DC V_DC 3 1 Vdc 1.0V 9 DC voltage 2 Vac '' 9 AC voltage, use polar() for phase 3 SaveCurrent y_n1 -1 Flag to save branch current END_ELEMENT V_Noise V_Noise 2 1 V_Noise 1uV 9 Noise voltage amplitude 2 SaveCurrent y_n1 -1 Flag to save branch current END_ELEMENT V_NoiseBD V_NoiseBD 7 1 K '' -1 Multiplicative Constant 2 Ie '' -1 DC Bias Current Exponent 3 A0 '' -1 Additive Constant in the Denominator 4 A1 '' -1 Multiplication Factor for the Frequency 5 Fe '' -1 Frequency Exponent 6 Elem '' -1 ID of an element such as R, FET, BJT 7 Pin '' -1 Element Pin Number or Name END_ELEMENT V_SpectrumDataset V_SpectrumDataset 4 1 Dataset '' -1 Dataset name 2 Expression '' -1 Dataset variable or expression 3 Freq 1GHz 0 Fundamental frequency 4 SaveCurrent y_n1 -1 Flag to save branch current END_ELEMENT V_nHarm V_nHarm 6 1 Freq 1GHz 0 Fundamental frequency 2 V 1V 9 N-th harmonic amplitude (use Add for more harmonics), use polar() for phase 3 Vdc 0V 9 DC Voltage 4 Vac 1V 9 AC voltage, use polar() for phase 5 SaveCurrent y_n1 -1 Flag to save branch current 6 FundIndex '' -1 Fundamental Frequency Index (Can Be Used Instead of Specifying Freq") END_ELEMENT V_nTone V_nTone 5 1 Freq 1GHz 0 N-th frequency tone (use Add for more tones) 2 V 1V 9 Corresponding N-th tone amplitude, (use Add for more amplitudes), use polar() for phase 3 Vdc 0V 9 DC Voltage 4 Vac 1V 9 AC voltage, use polar() for phase 5 SaveCurrent y_n1 -1 Flag to save branch current END_ELEMENT Vcor Vcor 1 1 Function list(our_vcor=vcor(icor,PortZ)) -1 vcor(current_correlation, port_imped) END_ELEMENT Vf_Pulse Vf_Pulse 10 1 Vpeak 1V 9 Peak amplitude 2 Vdc 0V 9 DC offset 3 Freq 1GHz 0 Frequency 4 Width 0.3nsec 6 Pulse width 5 Rise 0.1nsec 6 Rise time 6 Fall 0.1nsec 6 Fall time 7 Delay 0nsec 6 Time delay 8 Weight y_n0 -1 Gibbs Phenomenon 9 Harmonics 16 -1 Number of harmonics 10 SaveCurrent y_n1 -1 Flag to save branch current END_ELEMENT Vf_Sawtooth Vf_Sawtooth 7 1 Vpeak 1V 9 Peak amplitude 2 Vdc 0V 9 DC component 3 Freq 1GHz 0 Frequency 4 Delay 0nsec 6 Time delay 5 Weight y_n0 -1 Gibbs Phenomenon 6 Harmonics 16 -1 Number of harmonics 7 SaveCurrent y_n1 -1 Flag to save branch current END_ELEMENT Vf_Square Vf_Square 9 1 Vpeak 1V 9 Peak amplitude 2 Vdc 0V 9 DC component 3 Freq 1GHz 0 Frequency 4 Rise 0.1nsec 6 Rise time 5 Fall 0.1nsec 6 Fall time 6 Delay 0nsec 6 Time delay 7 Weight y_n0 -1 Gibbs Phenomenon 8 Harmonics 16 -1 Number of harmonics 9 SaveCurrent y_n1 -1 Flag to save branch current END_ELEMENT Vf_Triangle Vf_Triangle 6 1 Vpeak 1V 9 Peak amplitude 2 Vdc 0V 9 DC component 3 Freq 1GHz 0 Frequency 4 Delay 0nsec 6 Time delay 5 Harmonics 16 -1 Number of harmonics 6 SaveCurrent y_n1 -1 Flag to save branch current END_ELEMENT Vfc Vfc 1 1 Function list(our_vfc=vfc(vout,0,{1,0})) -1 vfc(positive_voltage,negative_voltage,desired_harm_freq) END_ELEMENT VfcTran VfcTran 1 1 Function list(our_vfct=vfc_tran(vout,0,1GHz,1)) -1 vfc_tran(positive_voltage,negative_voltage,fund_freq,num_of_harm) END_ELEMENT VoltGain VoltGain 1 1 Function list(our_vgain=volt_gain(S21,PortZ1,PortZ2)) -1 volt_gain(complex_transmission_coeff, input_port_imped, output_port_imped) END_ELEMENT Vspec Vspec 1 1 Function 'list(our_vspec=vout - 0)' -1 positive_voltage - negative_voltage END_ELEMENT VspecTran VspecTran 1 1 Function list(our_vspect=vspec_tran(vout,0,1GHz,8)) -1 vspec_tran(positive_voltage,negative_voltage,fund_freq,num_of_harm) END_ELEMENT Vt Vt 1 1 Function list(our_vt=vt(vout,0,0,10nsec,201)) -1 vt(positive_voltage,negative_voltage,tmin,tmax,num_of_pts) END_ELEMENT VtBitSeq VtBitSeq 8 1 Vlow 0V 9 Miminium voltage level 2 Vhigh 5V 9 Maximum voltage level 3 Rate 50MHz 0 Bit Rate 4 Rise 1nsec 6 Rise time of pulse 5 Fall 1nsec 6 Fall time of pulse 6 BitSeq 101010 -1 Bit squence 7 BW '' 0 Bandwidth 8 SaveCurrent y_n1 -1 Flag to save branch current END_ELEMENT VtDataset VtDataset 10 1 Dataset '' -1 Dataset name 2 Expression '' -1 Dataset variable or expression 3 Freq 0GHz 0 Carrier frequency 4 Gain 1.0 -1 Gain to apply to dataset values; may be complex and time varying 5 Tmax '' 6 Maximum dataset time to use 6 Toffset '' 6 Initial dataset time offset 7 Tscale '' -1 Time speed-up scaling factor 8 Vdc 0V 9 DC offset voltage 9 Interpolation 0 -1 Interpolation method 10 SaveCurrent y_n1 -1 Flag to save branch current END_ELEMENT VtExp VtExp 7 1 Vlow 0V 9 Initial voltage 2 Vhigh 1V 9 Pulse voltage 3 Delay1 0nsec 6 Rise delay time 4 Tau1 1nsec 6 Rise time constant 5 Delay2 1nsec 6 Fall delay time 6 Tau2 1nsec 6 Fall time constant 7 SaveCurrent y_n1 -1 Flag to save branch current END_ELEMENT VtImpulseDT VtImpulseDT 5 1 Vlow 0V 9 Miminium voltage level 2 Vhigh 1V 9 Maximum voltage level 3 Period 100nsec 6 Time between repetitive impulses 4 Delay 0nsec 6 Time delay before first impulse 5 Rout 1ohm 1 Output resistance END_ELEMENT VtLFSR_DT VtLFSR_DT 7 1 Vlow 0V 9 Miminium voltage level 2 Vhigh 1V 9 Maximum voltage level 3 Rate 24.3KHz 0 Bit Rate 4 Delay 0nsec 6 Initial time delay to first transition 5 Taps bin("10000000000000100") -1 Bits used to generate feedback 6 Seed bin("10101010101010101") -1 Initial value loaded into the shift register 7 Rout 1ohm 1 Output resistance END_ELEMENT VtOneShot VtOneShot 3 1 Delay (timestep) 6 Time delay from trigger until pulse starts 2 Width (5*timestep) 6 Pulse width 3 Vhigh 5V 9 Pulse voltage END_ELEMENT VtPWL VtPWL 2 1 V_Tran '(pwl(time, 0ns,0V, 10ns,1V, 20ns,0V))' 9 pwl(time, time-voltage pairs), or pwlr(time, Ncycles, time-voltage pairs) 2 SaveCurrent y_n1 -1 Flag to save branch current END_ELEMENT VtPulse VtPulse 9 1 Vlow 0V 9 Initial voltage 2 Vhigh 1V 9 Pulse voltage 3 Delay 0nsec 6 Time delay 4 Edge linear -1 Rising and falling edge type 5 Rise 1nsec 6 Rise time 6 Fall 1nsec 6 Fall time 7 Width 3nsec 6 Pulse width 8 Period 10nsec 6 Fall time 9 SaveCurrent y_n1 -1 Flag to save branch current END_ELEMENT VtPulseDT VtPulseDT 6 1 Vlow 0V 9 Initial voltage 2 Vhigh 1V 9 Pulse voltage 3 Delay 0nsec 6 Time delay 4 Width 3nsec 6 Pulse width 5 Period 10nsec 6 Fall time 6 Rout 1ohm 1 Output resistance END_ELEMENT VtRF_Pulse VtRF_Pulse 13 1 Freq 1GHz 0 RF carrier frequency 2 Vpeak (dbmtov(0,50)) 9 Voltage envelope of pulse 3 OffRatio 0 -1 Linear amplitude ratio of OFF to ON portions of pulse 4 Delay 0nsec 6 Time delay before first pulse 5 Rise 1nsec 6 Rise time of pulse 6 Fall 1nsec 6 Fall time of pulse 7 Width 3nsec 6 Width of constant portion of pulse 8 Period 100nsec 6 Pulse repetition period 9 Chirp 0Hz 0 Linear frequency modulation during pulse 10 Phase0 0deg 7 Initial phase of pulse carrier 11 Vdc '' 9 DC voltage 12 Vac 1V 9 AC voltage 13 SaveCurrent y_n1 -1 Flag to save branch current END_ELEMENT VtRF_Step VtRF_Step 7 1 Freq 1GHz 0 RF Frequency 2 V (polar(1,90)) 9 Voltage envelope of step 3 Delay 0nsec 6 Time delay before step 4 Rise 0nsec 6 Rise time of step 5 Vdc '' 9 DC voltage 6 Vac 1V 9 AC voltage 7 SaveCurrent y_n1 -1 Flag to save branch current END_ELEMENT VtRetrig VtRetrig 3 1 V (step(1us-(time-_tt(1)))) 9 User-defined waveform equation 2 Rout 1ohm 1 Output resistance 3 Thresh 0.5V 9 Trigger threshold on rising edge END_ELEMENT VtSFFM VtSFFM 6 1 Vdc 0V 9 Initial voltage offset 2 Amplitude 1V 9 Amplitude of signal 3 CarrierFreq 1GHz 0 Carrier Frequency 4 ModIndex 0.5 -1 Modulation Index 5 SignalFreq 1MHz 0 Signal Frequency 6 SaveCurrent y_n1 -1 Flag to save branch current END_ELEMENT VtSine VtSine 7 1 Vdc 0V 9 Initial voltage offset 2 Amplitude 1V 9 Amplitude of sinusoidal wave 3 Freq 1GHz 0 Frequency of sinusoidal wave 4 Delay 0nsec 6 Time Delay 5 Damping 0 -1 Damping factor 6 Phase 0deg 7 Phase value 7 SaveCurrent y_n1 -1 Flag to save branch current END_ELEMENT VtStep VtStep 5 1 Vlow 0V 9 Initial voltage 2 Vhigh 1V 9 Pulse voltage 3 Delay 0nsec 6 Time delay 4 Rise 1nsec 6 Rise time 5 SaveCurrent y_n1 -1 Flag to save branch current END_ELEMENT VtTran VtTran 1 1 Function list(our_vtt=vt_tran(vout,0)) -1 vt_tran(positive_voltage,negative_voltage) END_ELEMENT VtUserDef VtUserDef 4 1 V_Tran damped_sin(time) -1 Transient voltage 2 Vdc '' 9 DC voltage 3 Vac 1V 9 AC voltage 4 SaveCurrent y_n1 -1 Flag to save branch current END_ELEMENT WIRE WIRE 9 1 D 1.0mils 5 Wire diameter 2 L 50.0mils 5 Wire length 3 Rho 1.0 -1 Metal resistivity (relative to gold) 4 Temp '' 12 Physical temperature 5 AF 0.5 -1 (for Layout option) Arc factor;ratio of distance between two pins to wire length 6 CO 5.0mils 5 (for Layout option) Conductor offset; distance from edge of conductor 7 A1 30.0deg 7 (for Layout option) Angle of departure from first pin 8 A2 30.0deg 7 (for Layout option) Angle between direction of first and second pins 9 BondLayer smt_bond -1 (for Layout option) Layer on which the ribbon is drawn END_ELEMENT WaveformStats WaveformStats 0 END_ELEMENT X9TO1COR X9TO1COR 12 1 Z 50.0ohm 1 Characteristic impedance of transmission line 2 Len 10.0mils 5 Physical length of transmission line 3 K 2.0 -1 Effective dielectric constant for transmission lines 4 A 0.0 -1 Attenuation (dB / unit length) 5 F 1.0GHz 0 Frequency for scaling attenuation 6 N 1.0 -1 Number of turns 7 AL 1.0nH 3 Inductance index 8 TanD 0 -1 Dielectric loss tangent 9 Mur 1 -1 Relative permeability 10 TanM 0 -1 Permeability 11 Sigma 0 -1 Dielectric conductivity 12 Temp '' 12 Physical temperature END_ELEMENT X9TO1SLV X9TO1SLV 12 1 Z 50.0ohm 1 Characteristic impedance of transmission line 2 Len 10.0mils 5 Physical length of transmission line 3 K 2.0 -1 Effective dielectric constant for transmission lines 4 A 0.0 -1 Attenuation (dB / unit length) 5 F 1.0GHz 0 Frequency for scaling attenuation 6 Mu 1.0 -1 Relative permeability of surrounding sleeve 7 L 1.0nH 3 Inductance index (per unit length) without ferrite sleeves 8 TanD 0 -1 Dielectric loss tangent 9 Mur 1 -1 Relative permeability 10 TanM 0 -1 Permeability 11 Sigma 0 -1 Dielectric conductivity 12 Temp '' 12 Physical temperature END_ELEMENT X9TO4COR X9TO4COR 12 1 Z 50.0ohm 1 Characteristic impedance of transmission line 2 Len 10.0mils 5 Physical length of transmission line 3 K 2.0 -1 Effective dielectric constant for transmission lines 4 A 0.0 -1 Attenuation (dB / unit length) 5 F 1.0GHz 0 Frequency for scaling attenuation 6 N 1.0 -1 Number of turns 7 AL 1.0nH 3 Inductance index 8 TanD 0 -1 Dielectric loss tangent 9 Mur 1 -1 Relative permeability 10 TanM 0 -1 Permeability 11 Sigma 0 -1 Dielectric conductivity 12 Temp '' 12 Physical temperature END_ELEMENT X9TO4SLV X9TO4SLV 12 1 Z 50.0ohm 1 Characteristic impedance of transmission line 2 Len 10.0mils 5 Physical length of transmission line 3 K 2.0 -1 Effective dielectric constant for transmission lines 4 A 0.0 -1 Attenuation (dB / unit length) 5 F 1.0GHz 0 Frequency for scaling attenuation 6 Mu 1.0 -1 Relative permeability of surrounding sleeve 7 L 1.0nH 3 Inductance index (per unit length) without ferrite sleeves 8 TanD 0 -1 Dielectric loss tangent 9 Mur 1 -1 Relative permeability 10 TanM 0 -1 Permeability 11 Sigma 0 -1 Dielectric conductivity 12 Temp '' 12 Physical temperature END_ELEMENT XDB XDB 65 1 MaxOrder 4 -1 Maximum combined order to be considered 2 Freq 1.0GHz 0 Frequency of fundamental 3 Order 3 -1 Maximum order of fundamental to be considered 4 NestLevel 2 -1 Levels of subcircuits to output 5 StatusLevel 2 -1 Degree of annotation 6 FundOversample 1 -1 Oversampling ratio for FFT 7 Oversample '' -1 Oversampling ratio for FFT (repeated) 8 PackFFT '' -1 Pack FFT in multi-tone analysis 9 MaxIters 10 -1 Max number of iterations 10 GuardThresh '' -1 Guard threshold 11 SamanskiiConstant 2 -1 Samanskii constant 12 Restart no -1 Do not use last solution as initial guess 13 ArcLevelMaxStep 0.0 -1 Maximum arc-length step for source-level continuation 14 MaxStepRatio 100 -1 Ratio of maximum to given number of steps 15 MaxShrinkage 1.0e-5 -1 Maximum step shrinkage 16 OutputAllSolns '' -1 Output spectra at all computed steps when sweeping 17 ArcMaxStep 0.0 -1 Maximum arc-length step 18 ArcMinValue '' -1 Minimum value for parameter during arclength continuation 19 ArcMaxValue '' -1 Maximum value for parameter during arclength continuation 20 SS_Thresh '' -1 Small signal spectral threshold 21 UseAllSS_Freqs '' -1 Solve for all small signal mixer sidebands (requires more memory) 22 InputFreq '' -1 Input frequency for desired SSB mixing term 23 NLNoiseMode '' -1 Flag to indicate nonlinear noise mode 24 NLNoiseUseSweepPlan '' -1 Flag to indicate use of SweepPlan 25 NoiseFreqPlan '' -1 Instance/path name for noise sweep values 26 NLNoiseStart 1.0GHz 0 start frequency 27 NLNoiseStop 10.0GHz 0 stop frequency 28 NLNoiseStep 1.0GHz 0 step frequency 29 NLNoiseCenter '' 0 center frequency 30 NLNoiseSpan '' 0 span 31 NLNoiseLin '' -1 linear sweep 32 NLNoiseDec '' -1 number of points per decade 33 NLNoiseLog '' -1 log sweep 34 NLNoiseReverse '' -1 reverse sweep 35 NLNoisePt '' -1 single frequency 36 NLNoiseSort 'LINEAR START STEP' -1 sort frequencies 37 FreqForNoise '' 0 Noise frequency for spectral noise analysis 38 NoiseNode '' -1 Nodename to compute noise voltage (repeatable) 39 SortNoise NoiseSortOff -1 Sort Noise Contribution by: Value/1, Name/2 (default: 0/NoOutput) 40 NoiseThresh '' -1 Noise Contribution Threshold 41 IncludePortNoise '' -1 Include port noise in noise voltage and currents 42 NoisyTwoPort '' -1 Compute noisy two-port parameters: sopt, rn, & nfmin 43 BandwidthForNoise '' 0 Bandwidth for spectral noise analysis 44 UseKrylov '' -1 Use Krylov solver 45 UseInitialAWHB '' -1 Use initial AWHB stage before Krylov 46 AWHB_WindowSize '' -1 AWHB window size 47 GMRES_Restart '' -1 GMRES iterations before auto-restart 48 KrylovUsePacking '' -1 Use Krylov spectral packing 49 KrylovPackingThresh '' -1 Krylov bandwidth threshold 50 KrylovTightTol '' -1 GMRES tolerance 51 KrylovLooseTol '' -1 Loose tolerance for Krylov loop 52 KrylovLooseIters '' -1 Min number of iterations to invoke loose tolerance 53 KrylovMaxIters '' -1 Maximum number of GMRES iterations 54 GMRES_Orthog '' -1 Re-orthogonalize at every GMRES iteration 55 GC_XdB 1 -1 Specifies dB of compression to solve for 56 GC_InputPort 1 -1 Input port for XdBgc analysis 57 GC_OutputPort 2 -1 Output port for XdBgc analysis 58 GC_InputFreq 1.0GHz 0 Driving frequency at input port for XdBgc analysis 59 GC_OutputFreq 1.0GHz 0 Driving frequency at output port for XdBgc analysis 60 GC_InputPowerTol 1e-3 -1 Input power tolerance for XdBgc analysis 61 GC_OutputPowerTol 1e-3 -1 Output power tolerance for XdBgc analysis 62 GC_MaxInputPower 100 -1 Max input power (in dBm) for XdBgc analysis 63 DoGainComp Yes -1 Do gain compression flag 64 OutputBudgetIV '' -1 Output top-level pin currents and voltages 65 Other '' -1 Output string to netlist END_ELEMENT XFERP XFERP 9 1 N 1.0 -1 Turns Ratio, N1/N2 2 Lp 200.0nH 3 Magnetizing Inductance 3 Rc 1000.0ohm 1 Core Loss Resistance 4 K 0.9 -1 Coefficient of Coupling 5 R1 5.0ohm 1 Primary Loss Resistance 6 R2 5.0ohm 1 Secondary Loss Resistance 7 C1 25.0uF 4 Primary Capacitance 8 C2 25.0uF 4 Secondary Capacitance 9 C 0.1uF 4 Interwinding Capacitance END_ELEMENT XFERRUTH XFERRUTH 5 1 N 1.0 -1 Turns Ratio, N1/N2 2 AL 1.0nH 3 Inductance index 3 Z 50.0ohm 1 Characteristic Impedance of Transmission Line 4 E 10.0mils 5 Electrical Length of Transmission Line 5 F 1.0MHz 0 Reference Frequency for Electrical Length END_ELEMENT XFERTAP XFERTAP 4 1 N12 1.414 -1 Turns Ratio, N1/N2 2 N13 1.414 -1 Turns Ratio, N1/N3 3 L1 400.0nH 3 Primary Winding Inductance 4 K 0.9 -1 Coupling Coefficient END_ELEMENT XFERTL1 XFERTL1 13 1 Z 50.0ohm 1 Characteristic impedance of transmission line 2 Len 12.0mils 5 Physical length of transmission line 3 K 2.0 -1 Effective dielectric constant of transmission line 4 A 0.0 -1 Attenuation of transmission line, dB per unit length 5 F 1.0GHz 0 Frequency for scaling attenuation 6 N 5.0 -1 Number of turns 7 AL 960.0nH 3 Inductance index 8 Order 1 -1 Number of transmission lines 9 TanD 0 -1 Dielectric loss tangent 10 Mur 1 -1 Relative permeability 11 TanM 0 -1 Permeability 12 Sigma 0 -1 Dielectric conductivity 13 Temp '' 12 Physical temperature END_ELEMENT XFERTL2 XFERTL2 13 1 Z 50.0ohm 1 Characteristic impedance of transmission line 2 Len 12.0mils 5 Physical length of transmission line 3 K 2.0 -1 Effective dielectric constant of transmission line 4 A 0.0 -1 Attenuation of transmission line, dB per unit length 5 F 1.0GHz 0 Frequency for scaling attenuation 6 Mu 100.0 -1 Relative permeability of surrounding sleeve 7 L 20.0nH 3 Inductance (per unit length) of the line without the sleeve 8 Order 1 -1 Number of transmission lines 9 TanD 0 -1 Dielectric loss tangent 10 Mur 1 -1 Relative permeability 11 TanM 0 -1 Permeability 12 Sigma 0 -1 Dielectric conductivity 13 Temp '' 12 Physical temperature END_ELEMENT XTAL1 XTAL1 5 1 C 9.1189fF 4 Motional capacitance 2 L 10.0mH 3 Motional inductance 3 R 15.9ohm 1 Motional resistance 4 Cp 0.4537pF 4 Static capacitance 5 OT i3 -1 Overtone number END_ELEMENT XTAL2 XTAL2 5 1 C 9.1189fF 4 Motional capacitance 2 F 50.0MHz 0 Resonant frequency 3 Q 65862.0 -1 Unloaded Q 4 Cp 0.4537pF 4 Static capacitance 5 OT i3 -1 Overtone number END_ELEMENT Y1P_Eqn Y1P_Eqn 9 1 Y[1,1] '' -1 Y-parameter 2 ImpNoncausalLength '' -1 Non-causal function impulse response order 3 ImpMode '' -1 Convolution mode 4 ImpMaxFreq '' 0 Maximum Frequency to which device is evaluated 5 ImpDeltaFreq '' 0 Sample spacing in frequency 6 ImpMaxOrder '' -1 Maximum allowed impulse response order 7 ImpWindow '' -1 Smoothing window 8 ImpRelTol '' -1 Relative impulse response truncation factor 9 ImpAbsTol '' -1 Absolute impulse response truncation factor END_ELEMENT Y2P_Eqn Y2P_Eqn 13 1 Y[1,1] '' -1 Y-parameter 2 Y[1,2] '' -1 Y-parameter 3 Y[2,1] '' -1 Y-parameter 4 Y[2,2] '' -1 Y-parameter 5 Recip No -1 Port is reciprocal 6 ImpNoncausalLength '' -1 Non-causal function impulse response order 7 ImpMode '' -1 Convolution mode 8 ImpMaxFreq '' 0 Maximum Frequency to which device is evaluated 9 ImpDeltaFreq '' 0 Sample spacing in frequency 10 ImpMaxOrder '' -1 Maximum allowed impulse response order 11 ImpWindow '' -1 Smoothing window 12 ImpRelTol '' -1 Relative impulse response truncation factor 13 ImpAbsTol '' -1 Absolute impulse response truncation factor END_ELEMENT Y3P_Eqn Y3P_Eqn 18 1 Y[1,1] '' -1 Y-parameter 2 Y[1,2] '' -1 Y-parameter 3 Y[1,3] '' -1 Y-parameter 4 Y[2,1] '' -1 Y-parameter 5 Y[2,2] '' -1 Y-parameter 6 Y[2,3] '' -1 Y-parameter 7 Y[3,1] '' -1 Y-parameter 8 Y[3,2] '' -1 Y-parameter 9 Y[3,3] '' -1 Y-parameter 10 Recip No -1 Port is reciprocal 11 ImpNoncausalLength '' -1 Non-causal function impulse response order 12 ImpMode '' -1 Convolution mode 13 ImpMaxFreq '' 0 Maximum Frequency to which device is evaluated 14 ImpDeltaFreq '' 0 Sample spacing in frequency 15 ImpMaxOrder '' -1 Maximum allowed impulse response order 16 ImpWindow '' -1 Smoothing window 17 ImpRelTol '' -1 Relative impulse response truncation factor 18 ImpAbsTol '' -1 Absolute impulse response truncation factor END_ELEMENT Y4P_Eqn Y4P_Eqn 25 1 Y[1,1] '' -1 Y-parameter 2 Y[1,2] '' -1 Y-parameter 3 Y[1,3] '' -1 Y-parameter 4 Y[1,4] '' -1 Y-parameter 5 Y[2,1] '' -1 Y-parameter 6 Y[2,2] '' -1 Y-parameter 7 Y[2,3] '' -1 Y-parameter 8 Y[2,4] '' -1 Y-parameter 9 Y[3,1] '' -1 Y-parameter 10 Y[3,2] '' -1 Y-parameter 11 Y[3,3] '' -1 Y-parameter 12 Y[3,4] '' -1 Y-parameter 13 Y[4,1] '' -1 Y-parameter 14 Y[4,2] '' -1 Y-parameter 15 Y[4,3] '' -1 Y-parameter 16 Y[4,4] '' -1 Y-parameter 17 Recip No -1 Port is reciprocal 18 ImpNoncausalLength '' -1 Non-causal function impulse response order 19 ImpMode '' -1 Convolution mode 20 ImpMaxFreq '' 0 Maximum Frequency to which device is evaluated 21 ImpDeltaFreq '' 0 Sample spacing in frequency 22 ImpMaxOrder '' -1 Maximum allowed impulse response order 23 ImpWindow '' -1 Smoothing window 24 ImpRelTol '' -1 Relative impulse response truncation factor 25 ImpAbsTol '' -1 Absolute impulse response truncation factor END_ELEMENT Y5P_Eqn Y5P_Eqn 34 1 Y[1,1] '' -1 Y-parameter 2 Y[1,2] '' -1 Y-parameter 3 Y[1,3] '' -1 Y-parameter 4 Y[1,4] '' -1 Y-parameter 5 Y[1,5] '' -1 Y-parameter 6 Y[2,1] '' -1 Y-parameter 7 Y[2,2] '' -1 Y-parameter 8 Y[2,3] '' -1 Y-parameter 9 Y[2,4] '' -1 Y-parameter 10 Y[2,5] '' -1 Y-parameter 11 Y[3,1] '' -1 Y-parameter 12 Y[3,2] '' -1 Y-parameter 13 Y[3,3] '' -1 Y-parameter 14 Y[3,4] '' -1 Y-parameter 15 Y[3,5] '' -1 Y-parameter 16 Y[4,1] '' -1 Y-parameter 17 Y[4,2] '' -1 Y-parameter 18 Y[4,3] '' -1 Y-parameter 19 Y[4,4] '' -1 Y-parameter 20 Y[4,5] '' -1 Y-parameter 21 Y[5,1] '' -1 Y-parameter 22 Y[5,2] '' -1 Y-parameter 23 Y[5,3] '' -1 Y-parameter 24 Y[5,4] '' -1 Y-parameter 25 Y[5,5] '' -1 Y-parameter 26 Recip No -1 Port is reciprocal 27 ImpNoncausalLength '' -1 Non-causal function impulse response order 28 ImpMode '' -1 Convolution mode 29 ImpMaxFreq '' 0 Maximum Frequency to which device is evaluated 30 ImpDeltaFreq '' 0 Sample spacing in frequency 31 ImpMaxOrder '' -1 Maximum allowed impulse response order 32 ImpWindow '' -1 Smoothing window 33 ImpRelTol '' -1 Relative impulse response truncation factor 34 ImpAbsTol '' -1 Absolute impulse response truncation factor END_ELEMENT Y6P_Eqn Y6P_Eqn 45 1 Y[1,1] '' -1 Y-parameter 2 Y[1,2] '' -1 Y-parameter 3 Y[1,3] '' -1 Y-parameter 4 Y[1,4] '' -1 Y-parameter 5 Y[1,5] '' -1 Y-parameter 6 Y[1,6] '' -1 Y-parameter 7 Y[2,1] '' -1 Y-parameter 8 Y[2,2] '' -1 Y-parameter 9 Y[2,3] '' -1 Y-parameter 10 Y[2,4] '' -1 Y-parameter 11 Y[2,5] '' -1 Y-parameter 12 Y[2,6] '' -1 Y-parameter 13 Y[3,1] '' -1 Y-parameter 14 Y[3,2] '' -1 Y-parameter 15 Y[3,3] '' -1 Y-parameter 16 Y[3,4] '' -1 Y-parameter 17 Y[3,5] '' -1 Y-parameter 18 Y[3,6] '' -1 Y-parameter 19 Y[4,1] '' -1 Y-parameter 20 Y[4,2] '' -1 Y-parameter 21 Y[4,3] '' -1 Y-parameter 22 Y[4,4] '' -1 Y-parameter 23 Y[4,5] '' -1 Y-parameter 24 Y[4,6] '' -1 Y-parameter 25 Y[5,1] '' -1 Y-parameter 26 Y[5,2] '' -1 Y-parameter 27 Y[5,3] '' -1 Y-parameter 28 Y[5,4] '' -1 Y-parameter 29 Y[5,5] '' -1 Y-parameter 30 Y[5,6] '' -1 Y-parameter 31 Y[6,1] '' -1 Y-parameter 32 Y[6,2] '' -1 Y-parameter 33 Y[6,3] '' -1 Y-parameter 34 Y[6,4] '' -1 Y-parameter 35 Y[6,5] '' -1 Y-parameter 36 Y[6,6] '' -1 Y-parameter 37 Recip No -1 Port is reciprocal 38 ImpNoncausalLength '' -1 Non-causal function impulse response order 39 ImpMode '' -1 Convolution mode 40 ImpMaxFreq '' 0 Maximum Frequency to which device is evaluated 41 ImpDeltaFreq '' 0 Sample spacing in frequency 42 ImpMaxOrder '' -1 Maximum allowed impulse response order 43 ImpWindow '' -1 Smoothing window 44 ImpRelTol '' -1 Relative impulse response truncation factor 45 ImpAbsTol '' -1 Absolute impulse response truncation factor END_ELEMENT Yield Yield 13 1 SimInstanceName '' -1 Simulation component name 2 NumIters 250 -1 Number of Yield Optimization iterations 3 MaxTrials 1000 -1 Maximum number of Monte Carlo trials 4 PPT_Mode none -1 Post production tuning mode 5 ShadowModelType none -1 Type of shadow model to use: none, mfp, or hpsm 6 Seed '' -1 Seed for random number generator 7 SaveSolns Yes -1 Flag to send analysis solutions to dataset 8 SaveRandVars No -1 Send random variables to dataset 9 SaveSpecs No -1 Send yieldspec values to dataset 10 YieldSpecName '' -1 Name of yield_spec to use for yield estimate (repeatable) 11 StatusLevel 2 -1 Degree of annotation 12 Enable Yes -1 Flag to enable controllor 13 RestoreNomValues '' -1 Restores nominal values if controlling optimization END_ELEMENT YieldOptim YieldOptim 12 1 SimInstanceName '' -1 Simulation component name 2 NumIters '' -1 Number of Yield Optimization iterations 3 MaxTrials '' -1 Maximum number of Monte Carlo trials 4 PPT_Mode none -1 Post production tuning mode 5 ShadowModelType none -1 Type of shadow model to use: none, mfp, or hpsm 6 Seed '' -1 Seed for random number generator 7 SaveSolns No -1 Flag to send analysis solutions to dataset 8 SaveRandVars No -1 Send random variables to dataset 9 SaveSpecs No -1 Send yieldspec values to dataset 10 YieldSpecName '' -1 Name of yield_spec to use for yield estimate (repeatable) 11 StatusLevel '' -1 Degree of annotation 12 RestoreNomValues '' -1 Restores nominal values if controlling optimization END_ELEMENT YieldSpec YieldSpec 9 1 Expr '' -1 Specification expression name 2 SimInstanceName '' -1 Simulation component name 3 Min '' -1 Minimum acceptable spec value 4 Max '' -1 Maximum acceptable spec value 5 Weight '' -1 Weighting used in error function calculation 6 Save '' -1 Send spec value to dataset 7 RangeVar '' -1 Name of range variable 8 RangeMin '' -1 Minimum acceptable value for range variable 9 RangeMax '' -1 Maximum acceptable value for range variable END_ELEMENT Yin Yin 1 1 Function list(our_yin=yin(S11,PortZ1)) -1 yin(reflection_coeff, input_port_imped) END_ELEMENT Yopt Yopt 1 1 Function list(our_yopt=yopt(Sopt,PortZ1)) -1 yopt(gamma_opt, port_imped) END_ELEMENT Z1P_Eqn Z1P_Eqn 10 1 Z[1,1] '' -1 Z-parameter 2 C[1] '' 10 Port 1 controlling current 3 ImpNoncausalLength '' -1 Non-causal function impulse response order 4 ImpMode '' -1 Convolution mode 5 ImpMaxFreq '' 0 Maximum Frequency to which device is evaluated 6 ImpDeltaFreq '' 0 Sample spacing in frequency 7 ImpMaxOrder '' -1 Maximum allowed impulse response order 8 ImpWindow '' -1 Smoothing window 9 ImpRelTol '' -1 Relative impulse response truncation factor 10 ImpAbsTol '' -1 Absolute impulse response truncation factor END_ELEMENT Z2P_Eqn Z2P_Eqn 15 1 Z[1,1] '' -1 Z-parameter 2 Z[1,2] '' -1 Z-parameter 3 Z[2,1] '' -1 Z-parameter 4 Z[2,2] '' -1 Z-parameter 5 C[1] '' 10 Port 1 controlling current 6 C[2] '' 10 Port 2 controlling current 7 Recip No -1 Port is reciprocal 8 ImpNoncausalLength '' -1 Non-causal function impulse response order 9 ImpMode '' -1 Convolution mode 10 ImpMaxFreq '' 0 Maximum Frequency to which device is evaluated 11 ImpDeltaFreq '' 0 Sample spacing in frequency 12 ImpMaxOrder '' -1 Maximum allowed impulse response order 13 ImpWindow '' -1 Smoothing window 14 ImpRelTol '' -1 Relative impulse response truncation factor 15 ImpAbsTol '' -1 Absolute impulse response truncation factor END_ELEMENT Z3P_Eqn Z3P_Eqn 21 1 Z[1,1] '' -1 Z-parameter 2 Z[1,2] '' -1 Z-parameter 3 Z[1,3] '' -1 Z-parameter 4 Z[2,1] '' -1 Z-parameter 5 Z[2,2] '' -1 Z-parameter 6 Z[2,3] '' -1 Z-parameter 7 Z[3,1] '' -1 Z-parameter 8 Z[3,2] '' -1 Z-parameter 9 Z[3,3] '' -1 Z-parameter 10 C[1] '' 10 Port 1 controlling current 11 C[2] '' 10 Port 2 controlling current 12 C[3] '' 10 Port 3 controlling current 13 Recip No -1 Port is reciprocal 14 ImpNoncausalLength '' -1 Non-causal function impulse response order 15 ImpMode '' -1 Convolution mode 16 ImpMaxFreq '' 0 Maximum Frequency to which device is evaluated 17 ImpDeltaFreq '' 0 Sample spacing in frequency 18 ImpMaxOrder '' -1 Maximum allowed impulse response order 19 ImpWindow '' -1 Smoothing window 20 ImpRelTol '' -1 Relative impulse response truncation factor 21 ImpAbsTol '' -1 Absolute impulse response truncation factor END_ELEMENT Z4P_Eqn Z4P_Eqn 29 1 Z[1,1] '' -1 Z-parameter 2 Z[1,2] '' -1 Z-parameter 3 Z[1,3] '' -1 Z-parameter 4 Z[1,4] '' -1 Z-parameter 5 Z[2,1] '' -1 Z-parameter 6 Z[2,2] '' -1 Z-parameter 7 Z[2,3] '' -1 Z-parameter 8 Z[2,4] '' -1 Z-parameter 9 Z[3,1] '' -1 Z-parameter 10 Z[3,2] '' -1 Z-parameter 11 Z[3,3] '' -1 Z-parameter 12 Z[3,4] '' -1 Z-parameter 13 Z[4,1] '' -1 Z-parameter 14 Z[4,2] '' -1 Z-parameter 15 Z[4,3] '' -1 Z-parameter 16 Z[4,4] '' -1 Z-parameter 17 C[1] '' 10 Port 1 controlling current 18 C[2] '' 10 Port 2 controlling current 19 C[3] '' 10 Port 3 controlling current 20 C[4] '' 10 Port 4 controlling current 21 Recip No -1 Port is reciprocal 22 ImpNoncausalLength '' -1 Non-causal function impulse response order 23 ImpMode '' -1 Convolution mode 24 ImpMaxFreq '' 0 Maximum Frequency to which device is evaluated 25 ImpDeltaFreq '' 0 Sample spacing in frequency 26 ImpMaxOrder '' -1 Maximum allowed impulse response order 27 ImpWindow '' -1 Smoothing window 28 ImpRelTol '' -1 Relative impulse response truncation factor 29 ImpAbsTol '' -1 Absolute impulse response truncation factor END_ELEMENT Z5P_Eqn Z5P_Eqn 39 1 Z[1,1] '' -1 Z-parameter 2 Z[1,2] '' -1 Z-parameter 3 Z[1,3] '' -1 Z-parameter 4 Z[1,4] '' -1 Z-parameter 5 Z[1,5] '' -1 Z-parameter 6 Z[2,1] '' -1 Z-parameter 7 Z[2,2] '' -1 Z-parameter 8 Z[2,3] '' -1 Z-parameter 9 Z[2,4] '' -1 Z-parameter 10 Z[2,5] '' -1 Z-parameter 11 Z[3,1] '' -1 Z-parameter 12 Z[3,2] '' -1 Z-parameter 13 Z[3,3] '' -1 Z-parameter 14 Z[3,4] '' -1 Z-parameter 15 Z[3,5] '' -1 Z-parameter 16 Z[4,1] '' -1 Z-parameter 17 Z[4,2] '' -1 Z-parameter 18 Z[4,3] '' -1 Z-parameter 19 Z[4,4] '' -1 Z-parameter 20 Z[4,5] '' -1 Z-parameter 21 Z[5,1] '' -1 Z-parameter 22 Z[5,2] '' -1 Z-parameter 23 Z[5,3] '' -1 Z-parameter 24 Z[5,4] '' -1 Z-parameter 25 Z[5,5] '' -1 Z-parameter 26 C[1] '' 10 Port 1 controlling current 27 C[2] '' 10 Port 2 controlling current 28 C[3] '' 10 Port 3 controlling current 29 C[4] '' 10 Port 4 controlling current 30 C[5] '' 10 Port 5 controlling current 31 Recip No -1 Port is reciprocal 32 ImpNoncausalLength '' -1 Non-causal function impulse response order 33 ImpMode '' -1 Convolution mode 34 ImpMaxFreq '' 0 Maximum Frequency to which device is evaluated 35 ImpDeltaFreq '' 0 Sample spacing in frequency 36 ImpMaxOrder '' -1 Maximum allowed impulse response order 37 ImpWindow '' -1 Smoothing window 38 ImpRelTol '' -1 Relative impulse response truncation factor 39 ImpAbsTol '' -1 Absolute impulse response truncation factor END_ELEMENT Z6P_Eqn Z6P_Eqn 51 1 Z[1,1] '' -1 Z-parameter 2 Z[1,2] '' -1 Z-parameter 3 Z[1,3] '' -1 Z-parameter 4 Z[1,4] '' -1 Z-parameter 5 Z[1,5] '' -1 Z-parameter 6 Z[1,6] '' -1 Z-parameter 7 Z[2,1] '' -1 Z-parameter 8 Z[2,2] '' -1 Z-parameter 9 Z[2,3] '' -1 Z-parameter 10 Z[2,4] '' -1 Z-parameter 11 Z[2,5] '' -1 Z-parameter 12 Z[2,6] '' -1 Z-parameter 13 Z[3,1] '' -1 Z-parameter 14 Z[3,2] '' -1 Z-parameter 15 Z[3,3] '' -1 Z-parameter 16 Z[3,4] '' -1 Z-parameter 17 Z[3,5] '' -1 Z-parameter 18 Z[3,6] '' -1 Z-parameter 19 Z[4,1] '' -1 Z-parameter 20 Z[4,2] '' -1 Z-parameter 21 Z[4,3] '' -1 Z-parameter 22 Z[4,4] '' -1 Z-parameter 23 Z[4,5] '' -1 Z-parameter 24 Z[4,6] '' -1 Z-parameter 25 Z[5,1] '' -1 Z-parameter 26 Z[5,2] '' -1 Z-parameter 27 Z[5,3] '' -1 Z-parameter 28 Z[5,4] '' -1 Z-parameter 29 Z[5,5] '' -1 Z-parameter 30 Z[5,6] '' -1 Z-parameter 31 Z[6,1] '' -1 Z-parameter 32 Z[6,2] '' -1 Z-parameter 33 Z[6,3] '' -1 Z-parameter 34 Z[6,4] '' -1 Z-parameter 35 Z[6,5] '' -1 Z-parameter 36 Z[6,6] '' -1 Z-parameter 37 C[1] '' 10 Port 1 controlling current 38 C[2] '' 10 Port 2 controlling current 39 C[3] '' 10 Port 3 controlling current 40 C[4] '' 10 Port 4 controlling current 41 C[5] '' 10 Port 5 controlling current 42 C[6] '' 10 Port 6 controlling current 43 Recip No -1 Port is reciprocal 44 ImpNoncausalLength '' -1 Non-causal function impulse response order 45 ImpMode '' -1 Convolution mode 46 ImpMaxFreq '' 0 Maximum Frequency to which device is evaluated 47 ImpDeltaFreq '' 0 Sample spacing in frequency 48 ImpMaxOrder '' -1 Maximum allowed impulse response order 49 ImpWindow '' -1 Smoothing window 50 ImpRelTol '' -1 Relative impulse response truncation factor 51 ImpAbsTol '' -1 Absolute impulse response truncation factor END_ELEMENT Zin Zin 1 1 Function list(our_zin=zin(S11,PortZ1)) -1 zin(reflection_coeff, input_port_imped) END_ELEMENT Zopt Zopt 1 1 Function list(our_zopt=zopt(Sopt,PortZ1)) -1 zopt(gamma_opt, port_imped) END_ELEMENT BURIEDR BURIEDR 12 1 L 10.0mils 5 Resistor Length 2 W 3.0mils 5 Resistor Width 3 VALUE 50ohm 1 Resistance Value 4 MT 10 -1 Maximum Tolerance (%) 5 PD 100 -1 Power Dissipation (mW) 6 Layer SIGNAL_2 -1 Resistor Conductor Layer 7 Shape Bar -1 Resistor Shape 8 SpecType Electric -1 Electric|Physical Resistor Input Specification 9 TL 0.2mils 5 Resistor Termination Length 10 OW 0.2mils 5 Resistor Overlap Width 11 PL 1mils 5 Rectangular Pad Length 12 PW 1mils 5 Rectangular Pad Width END_ELEMENT THIN_BR THIN_BR 15 1 VALUE 50ohm 1 Resistance Value 2 Layer SIGNAL_2 -1 Resistor Conductor Layer 3 Material Ohmega -1 Thin Film Material 4 RW 3.0mils 5 Resistor Width 5 RL 10.0mils 5 Resistor Length 6 MT 10 -1 Maximum Tolerance (%) 7 PD 0.100W 8 Power Dissipation 8 SpecType Electric -1 Electric|Physical Resistor Input Specification 9 TL 0.2mils 5 Resistor Termination Length 10 OW 0.2mils 5 Resistor Overlap Width 11 PL 1mils 5 Rectangular Pad Length 12 PW 1mils 5 Rectangular Pad Width 13 PE 0.2mils 5 Pad Extend 14 PO 0.2mils 5 Pad Overlap 15 TF 1 -1 Laser Trimming Factor END_ELEMENT THICK_BR THICK_BR 16 1 VALUE 50ohm 1 Resistance Value 2 Layer SIGNAL_3 -1 Resistor Conductor Layer 3 Material msf_436_62-404 -1 Thick Film Material 4 RW 3.0mils 5 Resistor Width 5 RL 10.0mils 5 Resistor Length 6 MT 10 -1 Maximum Tolerance (%) 7 PD 0.100W 8 Power Dissipation 8 VT 200V 9 Voltage Rating 9 SpecType Electric -1 Electric|Physical Resistor Input Specification 10 DX 0.0mils 5 Resistor Mask Delta X 11 DY 0.0mils 5 Resistor Mask Delta Y 12 PL 1mils 5 Rectangular Pad Length 13 PW 1mils 5 Rectangular Pad Width 14 PE 0.2mils 5 Pad Extend 15 PO 0.2mils 5 Pad Overlap 16 TF 1 -1 Laser Trimming Factor END_ELEMENT EMBD_CAP EMBD_CAP 21 1 VALUE 50pF 4 Capacitance Value 2 Layer SIGNAL_3 -1 Capacitor Conductor Layer 3 Material Example -1 Capacitor Material 4 DL 20mils 5 Dielectric Length 5 DW 20mils 5 Dielectric Width 6 G 10mils 5 Gap between plate1 and pad2 7 MT 10 -1 Maximum Tolerance (%) 8 PD 0.100W 8 Power Dissipation 9 VT 200V 9 Voltage Rating 10 CR 0.1A 10 Current Rating 11 N 1 -1 Capacitance Stackup 12 SpecType Electric -1 Electric|Physical Resistor Input Specification 13 PL 6mils 5 Rectangular Pad Length 14 PW 25mils 5 Rectangular Pad Width 15 DE 2mils 5 Dielectric Extent 16 DO 2mils 5 Dielectric Overlap 17 DX 5mils 5 Dielectric shift along X-axis 18 P1E 2mils 5 Plate1 Extend 19 P1O 2mils 5 Plate1 Overlap 20 P2E 2mils 5 Plate2 Extend 21 P2O 2mils 5 Plate2 Overlap END_ELEMENT EMBD_IDCAP EMBD_IDCAP 19 1 VALUE 50pF 4 Capacitance Value 2 Layer SIGNAL_3 -1 Capacitor Conductor Layer 3 Material Example -1 Capacitor Material 4 E1 10 -1 Dielectric constant of substrate layer 5 E2 15 -1 Dielectric constant of superstrate layer 6 E3 10 -1 Dielectric constant of cover layer 7 SpecType Electric -1 Electric|Physical Resistor Input Specification 8 W 5.0mils 5 Finger width 9 G 5.0mils 5 Gap between fingers 10 Ge 5.0mils 5 Gap at end of fingers 11 L 50.0mils 5 Length of overlapped region 12 Np 3 -1 Number of fingers 13 Wt 25.0mils 5 Width of the interconnect 14 Wf 25.0mils 5 Width of the feed line 15 OH 0mils 5 Overhang 16 T1 0.1mils 5 Thickness of substrate layer 17 T2 0.01mils 5 Thickness of superstrate layer 18 T3 0.1mils 5 Thickness of cover layer 19 T4 0.005mils 5 Conductor Thickness END_ELEMENT MTEE_ADS MTEE_ADS 5 1 Subst MSub1 -1 Substrate instance name 2 W1 25.0mils 5 Conductor width at pin 1 3 W2 25.0mils 5 Conductor width at pin 2 4 W3 50.0mils 5 Conductor width at pin 3 5 Temp '' 12 Physical temperature 6 AutomaticWidth 'Disabled' -1 END_ELEMENT MSABND_MDS MSABND_MDS 4 1 Subst MSub1 -1 Substrate instance name 2 W 10.0mils 5 Conductor width 3 Angle 45deg 7 Angle of bend 4 M 0.5 -1 Miter fraction 6 AutomaticWidth 'Disabled' -1 END_ELEMENT MSOBND_MDS MSOBND_MDS 2 1 Subst MSub1 -1 Substrate instance name 2 W 10.0mils 5 Conductor width 6 AutomaticWidth 'Disabled' -1 END_ELEMENT MRINDELM MRINDELM 12 1 Subst MSub1 -1 Substrate instance name 2 Ns 7 -1 Number of segments 3 L1 11.4mils 5 Length of first segment 4 L2 9.4mils 5 Length of second segment 5 L3 7.4mils 5 Length of third segment 6 Ln 0mils 5 Length of last segment 7 W 0.45mils 5 Conductor width 8 S 0.35mils 5 Conductor spacing 9 Wu 0.45mils 5 Width of underpass strip conductor 10 Au 0.0deg 7 Angle of departure from innermost segment 11 UE 4.0mils 5 Extension of bridge beyond inductor 12 Temp '' 12 Physical temperature END_ELEMENT MRINDSBR MRINDSBR 18 1 Subst MSub1 -1 Substrate instance name 2 Ns 7 -1 Number of segments 3 L1 11.4mils 5 Length of first segment 4 L2 9.4mils 5 Length of second segment 5 L3 7.4mils 5 Length of third segment 6 Ln 0mils 5 Length of last segment 7 W 0.45mils 5 Conductor width 8 S 0.35mils 5 Conductor spacing 9 Wb 0.45mils 5 Width of underpass strip conductor 10 Ab 0.0deg 7 Angle of departure from innermost segment 11 Be 4.0mils 5 Extension of bridge beyond inductor 12 Temp '' 12 Physical temperature END_ELEMENT MSSPLC_MDS MSSPLC_MDS 5 1 Subst MSub1 -1 Substrate instance name 2 N 2.0 -1 Number of turns 3 OD 62.0mils 5 Overall dimension 4 W 4.0mils 5 Conductor width 5 S 2.0mils 5 Conductor spacing END_ELEMENT MSSPLS_MDS MSSPLS_MDS 5 1 Subst MSub1 -1 Substrate instance name 2 N 2.0 -1 Number of turns 3 OD 62.0mils 5 Overall dimension 4 W 4.0mils 5 Conductor width 5 S 2.0mils 5 Conductor spacing END_ELEMENT MSSPLR_MDS MSSPLR_MDS 5 1 Subst MSub1 -1 Substrate instance name 2 N 3.0 -1 Number of turns 3 Ro 62.0mils 5 Inner radius 4 W 4.0mils 5 Conductor width 5 S 2.0mils 5 Conductor spacing END_ELEMENT MSUBST3 MSUBST3 13 1 Er[1] 4.5 -1 Dielectric Constant 2 H[1] 10mils 5 Height of Substrate 3 TanD[1] 0 -1 Dielectric Loss Tangent 4 T[1] 0mils 5 Thickness 5 Cond[1] 1.0E+50 -1 Conductor conductivity in Siemens/meter 6 Er[2] 4.5 -1 Dielectric Constant 7 H[2] 10mils 5 Height of Substrate 8 TanD[2] 0 -1 Dielectric Loss Tangent 9 T[2] 0mils 5 Thickness 10 Cond[2] 1.0E+50 -1 Conductor conductivity in Siemens/meter 11 LayerName[1] cond -1 (for Layout option) Layer to which cond is mapped 12 LayerName[2] cond2 -1 (for Layout option) Layer to which cond is mapped 13 ViaLayerName[1] diel2 -1 (for Layout option) Layer to which via hole is mapped END_ELEMENT